ne. ,O TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 FAX: (973) 376-8960 MJE1 090 mn, MJE1 093 PNP (S,LICON> MJE2090,htuMJE2093 MJE1100.hruMJE1103NPN MJE2100^MJE2103 5.0 AMPERE PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 70 WATTS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gam hcg = 750 (Win) @ IG = 30and 4 0 Adc • True Three Lead Monolithic Construction — Emitter-Base Resistors to Prevent Leakage Multiplication are Built in. • Available in Two Packages - Case 90 or Case 199 MJE1090 MJE109I MJE1092 MJE1093 MJEItOO MJE1101 MJE1102 MJE1103 MAXIMUM RATINGS Symbol RiTino Collector-Enrnttr Voltage Collector-Bau Voltage Ernimr-Batt Voltage Collector Current 6vte Current MJE1090 MJE10B1 MJE1100 MJE1U1 MJE2MO MJEJOB1 MJE2100 MJE2101 Unit CASE 90-05 VCEO 60 80 Vdc V CB VEB 'c 60 80 Vdc ViJc 50 Adc Adc 70 056 Watts -55to»150 °C PD T J' Titg 5.0 01 >B Total Device Diiupation @ T c • 25°C Derate above 25°C Operating and Storage Junction Ternperatinq Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance. Junction to Case MJE1092 MJE1M3 MJE1102 MJE1103 MJE2092 MJE2003 MJEZ102 MJE2103 W/°C Symbol M» Unit OJC 1.8 °C/W MJE2090 MJE20S1 MJE20S5 MJE20S3 MJE210Q MJE3101 MJE2102 MJE2103 S X CASE 199-04 N S 8 5i S S 3 N X k. S N \ = PO. POWER DISSIPATIO* iVIAT'SI FIGURE 1 - POWER DERATING 20 ID 60 U 100 120 140 ISC TC, CAS£TEMKRATU»E( 0 C) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and pa^ftge dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors entourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors MJE1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued) MJE2090thru MJE2093 PNP/MJE2100 thru MJE2103 NPN ELECTRICAL CHARACTERISTICS ITC - 25°C uniw oth.rwiw noi«d) Chtraewtatte 1 Symbol [ M» Unit _ Vdc 60 60 80 80 - soo Min | off CHARACTERISTICS CottMtor-Entintr BfHkdown Volug*"' (lc- 100 mAdc, I B « 0) MJE1090, MJE 1091, MJE 1100. MJE 1 101 MJE2090, MJE2091, MJE2100. MJE2101 MJET092, MJE 1093, MJE 1 K)2, MJE 1 103 MJE2092, MJ62093, MJE 2 102, MJE2103 Collector Cutoff Currant IV CE -30Vdc, IS = 01 MJE1090, MJE1091.MJE1100. MJE1101 MJE 2090, MJE2091. MJE210O, MJP2101 (VCE - 40 Vdc, IB - 0) MJE 1092, MJE 1093. MJE1102, MJ61103 MJE 2092, MJE2093. MJE2102. MJE 2 103 CollKtor Cutoff Current (VCB - RlUd BVCEO, l£ ' 0' BVceo 'CEO L: Emitter Cutoff Currant (V8E - S.O Vdc, lc * 0) ON CHARACTERISTICS (II DC Current Giin (1C - 3.0 Adc. V CE "S.OVdcl (1C - 4.0 Adc, VCE -3.0 Vdc) (1C -*-0 Adc, IB - 16mAdcl Bn*-Emitt>r On Voltagt (1C- 3.0 Adc, VCE *3.0 Vocl MJE1090. MJE 1092, MJE 1100, MJE1 102 MJE2090, MJE2092, MJE2100, MJE 2 102 MJE1091, MJE1093, MJE 1101, MJE1103 MJE2091. Mje2093. MJE2101. MJ^103 MJE 1090, MJE 1092, MJE 1 100, MJE 1102 MJE 2090. MJE2092. MJE2100. MJE2102 MJE1091.MJE 1093, MJE 1101. MJE 1103 MJE2091, MJE2093. MJE2101. MJE2103 (1C -4.0 Adc. VCE • 3.0 Vdc) 500 IEBO — 2.0 750 750 750 750 - hFE VCE 0.2 2.0 mAdc - - Vdc Isai) - v BE(on) 2.5 2.5 2.8 2.8 Vdc - DYNAMIC CHARACTERISTICS Snull-Signd Currtnt Glin (IC - 3.0 Adc. VCE -3.0 Vdc, I- 1.0 MHz) _j mAdc - MJE1090. MJE 1092, MJE1100, MJE1102 MJE 2090, MJE 2092, MJE210O, MJE2102 MJE 1091. MJE 1093, MJE 1101, MJE 1103 MJE2Q91. MJE20931MJE2101, MJE2103 CollKtor-EmitttrS*tur>tion Voltag* (1C -3.0 Adc, I 8 - 12mAde) $00 soo ICBO (VCB - R««d BVceo. IE - o, TC - ioo°c> (jAdc 1.0 "1, 2.5 25 25 2.5 - - lu T.it Pul» Width < 300 |». Duty Cycl* < 2 OS FIGURE 2 - DC SAF6 OPERATING AREA , .. —„_ — s kx iiconi nakdlMN Lnnitm flw™ 1, L mind It IC-JS°C Wu LMiud ;-'MJEIOM.i 1 , — - - MJE2090. 91 | - - HJEIWO,OI|~ MJC2IOO, 01 ' ~ MJE1D92.1 There are two limitanons on ihp power handling Ability Of a Uansistor: junction tempuraiure and >«condarv bregkdown Safe \ MI nign case temperatures, thermal limitations will reduce the power thai can be handled to values Ivss than the limitations imposed by secondary breakdown (See AN.415) \ — I1" Z^ \ -=: 1; • 25" c Kjenra.a HJE2W,0 1 ' la u m n 10 20 30 E. COUECTOfl EMITTtB yOlt*GE [VOLTS! FIGURE 3 - DARLINGTON CIRCUIT SCHEMATIC PNP MJO090 tnru MJE1093 MJE2090 thru MJEZ093 NfN e.««o HUE 11 DO Ba»O CrnittAr so n 100 MJE1090 thru MJE1093 PNP/MJE1100 thru MJE1103 NPN (continued) MJE2090 thru MJE2093 PNP/MJE2100 thru MJE2103 NPN MJ6109O MJE 1091 MJE 1092 MJE 1093 MJE1101 MJE 1 102 MJEl 103 i/'F U it [-8- M Q ^1 MJE2O9O MJE 2091 MJE 2092 MJE2093 MJE2100 MJE2101 MJ62102 MJE 2 103 f" I J Q -T \. xk, vrf5^ » fflh- K ___. |"tl« D Uj -*HGH«- <~^-l =lf r-i STV LE2: PIK 1, EMITTER 2. COLLECTOR 3. BASE L- HirN(R L(•.jri y i . . f MILLIMETERS Ml LIMETERS DIM M N MAX A B C 0 F G H 1 K M R U 16 13 1638 12 :7 12^3 3 18 3.43 1 19 124 3 51 3.76 42; BSC 2 0 113 0864 1$ ~ 9° TYP sz, JiL 1 91 t 22 2.1E C.48 INCHES MIN MAX 0.635 0.645 0495 0.125 0,135 0.043 0.049 0.138 0.148 BSC 0.18 0.105 0.115 0.032 O.OW O.M5 rvp 0.075 o.ms 0.245 0.255 NOTE 1 LEADS WITHIN .005" BAD OF TRUE POSITION 1TPI ATMMC ITT \ —s ifL D- "1 t ' M STYLE 1: PIN 1. BASE 2 COLLECTOR 3 EMITTER INCHES DIM MIN MAX MIN MAX A B 16.08 12.57 16.33 12.83 0.643 0.505 D 0.51 0.76 f 3.61 3.86 0.633 0.435 0,125 0.020 0.142 J.4J S 2.51 BSC H 2.67 2.92 J 0.43 0.69 K 14.73 14.99 2.41 I 2 16 M 3° 'YP N 1,47 1.73 a 4.78 5.03 H S T U 1.91 0.81 6.99 6.22 0.86 7.24 2.16 6.48 0.10 0.105 0.017 0.580 0.085 0.1* 0.030 0.152 BSC 0.115 0.0 !7 0.590 0.095 TYP 0.058 0.0 8« TJT188 0.1 is 0.075 0.085 0.03T 0.034 0.275 6.285 0.245 0.21 A 3° OIM "6" IS TO CENTER LINE OF LEADS.