, U na. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN ME. SPRINGFIELD, NEW JERSEY 07081 U.S.A. J111; J112; J113 N-channel silicon field-effect transistors DESCRIPTION Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. FEATURES • High speed switching • Interchangeability of drain and source connections • Low RDS on at zero Qate voltage PINNING 1 = gate Fig.1 Simplified outline and symbol, TO-92. 2 = source 3 = drain Note: Drain and source are interchangeable. QUICK REFERENCE DATA J111 Drain-source voltage J112 J113 ±VDS max. 40 40 40 V IDSS m'n- 20 5 2 mA Ptot max. 400 400 400 mW ~ VGSoff min. max. 3 10 1 5 0.5 3 V V RDS on m ax- 30 50 100 n Drain current VDS=15V;VGS = 0 Total power dissipation up to Tamb = 50 °C Gate-source cut-off voltage VDS = 5 V; ID = 1 uA Drain-source on-state resistance VDS = 0.1 V;V GS = 0 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors N-channel silicon field-effect transistors J111; J112; J113 RATINGS Limiting values in accordance with the Absolute Maximum System (EC 134) Drain-source voltage ±VDS max. Gate-source voltage ~VGSO max. 40 V Gate-drain voltage -VGDO max. 40 V Gate forward current (DC) IG max. 50 mA Pfot max. 40 V Total power dissipation up to Tamb = 50 °C Storage temperature range Tstg Junction temperature Tj 400 mW -65 to +150 °C max. 150 °C THERMAL RESISTANCE From junction to ambient in free air 250 K/W Mh j-a STATIC CHARACTERISTICS TJ = 25 °C unless otherwise specified J111 J112 J113 Gate reverse current -V G S =15V;V D S = 0 -loss rnax. 1 1 1 nA -IDSX max. 1 1 1 nA IDSS mm- 20 5 2 mA ~V(BR)GSS min- 40 40 40 V min. 3 1 0.5 V max. 10 5 3 V max. 30 50 100 Q Drain cut-off current VDS = 5V;-V G S = 10V Drain saturation current VDS=15V;VGS = 0 Gate-source breakdown voltage -IG = 1 nA; VDS = 0 Gate-source cut-off voltage VDS = 5 V; ID = 1 nA ~VGs off Drain-source on-state resistance VDS = 0.1 V;V GS = 0 Roson