2ov vDS = 2ov, VDS = 2ov, VDS = 3ov, VDS = iov

tJ
tSsini-Conducto'i ZPioducti, Line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2N3458
2N3459
2N3460
N-CHANNEL JUNCTION
FIELD EFFECT TRANSISTOR
JEDECTO-18CASE
2IM3458, 2N3459, 2N3460 types are silicon N-Channel Junction Field Effect
Transistors designed for low frequency, low noise amplifier applications.
MAXIMUM RATINGS (TA = 25°C)
SYMBOL
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
Power Dissipation
Storage Temperature
UNITS
50
50
VDG
VGS
IG
PD
V
V
mA
10
300
-65 to +175
Tstg
mW
°C
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
2N3458
SYMBOL
TEST CONDITIONS
"GSS
VGS = sov
VDS - 2ov
IDSS
BVGSS
VGS(OFR
Ivfsl
IVosI
ciss
NF
vDS = 2ov,
VDS = 2ov, f = 1.0kHz
VDS = 3ov, f = 1.0kHz
VDS = iov
1 0V, f = 20Hz- RG =1 -OMn
M|N
3.0
50
2500
MAX
0.25
15
2N3459
MIN
0.8
50
7.8
10000 1500
35
18
5.0
6.0
MAX
0.25
4.0
3.4
6000
20
18
5.0
4.0
2N3460
MIN
0.2
50
800
MAX
UNITS
0.25
1.0
nA
mA
V
V
umhos
umnos
PF
pF
dB
1.8
4500
5.0
18
5.0
4.0
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
.209(5.31 )
* . 230 (.5 . 84)
. 178(4.52)
. 195(4.95)
——~
.170(4.32)
.210( 5.33)
i
1
.030( 0.78) |
MAXIMUM
. 500 ( 2.70)
1
es (mm).
M I N I MUM
3 LEADS
.016(0.41)
. 0 19(0.48) """
i
JU
.100(2.54)
LEAD f 2
LEAD *
1
LEAD * 3
038(0.91
046( 1 . 1 7 )
.028(0 .71)
.048( 1 .22)
LEAD CODE:
1) SOURCE
2) DRAIN
3) GATE