PHOTODIODE 13 mm2 UVG12 FEATURES • • • • • Circular active area Ideal for 193-400 nm detection 100% internal QE No cap for maximum responsivity Sacrificial cap taped on for shipping purposes Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS TEST CONDITIONS MIN TYP MAX UNITS mm2 13.2 Active Area Ø 4.1 mm Responsivity, R @ 254 nm 0.105 0.115 VF = ± 10 mV 100 1000 Mohm Volts Shunt Resistance Reverse Breakdown Voltage, VR IR = 1 µA 9 Capacitance, C VR = 0 V 3 Rise Time VR = 0 V 0.125 A/W 7 nF 4 µsec THERMAL PARAMETERS STORAGE AND OPERATING TEMPERATURE RANGE Storage Temperature Range Maximum Junction Temperature -20° TO 80°C 80°C Lead Soldering Temperature1 240°C 1 0.0625" from case for 10 seconds. Shipped with temporary cover to protect photodiode and wire bond. Review Opto Diode “Handling Precautions for IRD Detectors” prior to removing cover. 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision September 6, 2013 PHOTODIODE 13 mm2 Responsivity (A/W) 0.6 UVG12 RESPONSIVITY 0.5 0.4 0.3 0.2 0.1 0.0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) 1260 Calle Suerte, Camarillo, California 93012 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: [email protected], Website: www.optodiode.com Revision September 6, 2013