FS50ASJ-03F High-Speed Switching Use Nch Power MOS FET REJ03G0238-0100 Rev.1.00 Aug.20.2004 Features • • • • • Drive Voltage : 4V VDSS : 30 V rDS(ON) (max) : 12.2 mΩ ID : 50 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline MP-3A 2, 4 4 1. 2. 3. 4. 1 12 3 Gate Drain Source Drain 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulse) Avalanche current (Pulse) Source current Source current (Pulse) Maximum power dissipation Channel temperature Storage temperature Mass Rev.1.00, Aug.20.2004, page 1 of 6 Symbol VDSS VGSS Ratings 30 ±20 Unit V V ID IDM IDA IS ISM PD Tch Tstg — 50 200 50 50 200 50 – 55 to + 150 – 55 to + 150 0.32 A A A A A W °C °C g Conditions VGS = 0 V VDS = 0 V L = 6 µH Typical value FS50ASJ-03F Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Min. 30 ±20 — — 1.0 — — — — — — — — — — — — Typ. — — — — 1.5 9.2 13 0.23 45 2100 690 340 16 90 130 85 1.0 Max. — — 100 ±10 2.0 12.2 19 0.31 — — — — — — — — 1.5 Unit V V µA µA V mΩ mΩ V S pF pF pF ns ns ns ns V Test conditions ID = 1 mA, VGS = 0 V IG = ±100 µA, VDS = 0 V VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V ID = 25 A, VGS = 4 V ID = 25 A, VGS = 10 V ID = 25 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz Thermal resistance Diode reverse recovery time Rth(ch-c) trr — — — 50 2.5 — °C/W ns Channel to case IS = 25 A, dis/dt = – 50 A/µs Rev.1.00, Aug.20.2004, page 2 of 6 VDD = 15 V, ID = 25 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 25 A, VGS = 0 V FS50ASJ-03F Performance Curves 3 2 80 102 7 5 Drain Current ID (A) 100 60 40 20 0 50 200 1ms 3 2 Tc = 25°C Single Pulse 100 3 5 7 100 2 3 10ms DC 5 7 101 2 3 50 Tc = 25°C Pulse Test 4V 40 3V 20 PD = 50W 1.0 2.0 3.0 57 4.0 40 VGS = 10V 6V 5V 4V 30 PD = 50W 3V 20 10 0 5.0 Tc = 25°C Pulse Test 0 0.4 0.8 1.2 1.6 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) 5.0 Tc = 25°C Pulse Test 4.0 3.0 2.0 ID = 80A 1.0 50A 30A 0 101 7 5 Output Characteristics (Typical) 60 0 100µs Output Characteristics (Typical) VGS = 10V 6V 5V 0 3 2 Drain-Source Voltage VDS (V) 80 0 tw = 10µs Case Temperature Tc (°C) 100 Drain Current ID (A) 150 100 Drain Current ID (A) 0 Drain-Source On-State Voltage VDS(ON) (V) Maximum Safe Operating Area 2 4 6 8 Gate-Source Voltage VGS (V) Rev.1.00, Aug.20.2004, page 3 of 6 10 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain Power Dissipation PD (W) Drain Power Dissipation Derating Curve 2.0 50 Tc = 25°C Pulse Test 40 30 VGS = 4V 20 10 10V 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Drain Current ID (A) FS50ASJ-03F Forward Transfer Admittance vs. Drain Current (Typical) Tc = 25°C VDS = 10V Pulse Test 80 60 40 20 0 0 2 4 6 10 103 7 5 Coss 3 2 Crss 75°C 101 7 5 4 3 125°C 2 100 0 10 2 3 4 5 7 101 103 7 5 4 3 2 3 4 5 7 10 2 Tch = 25°C VDD = 15V VGS = 10V RGEN = RGS = 50Ω td(off) 2 tf 102 7 5 4 3 tr td(on) 2 102 10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 101 100 2 3 4 5 7 101 2 3 4 5 7 10 2 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 100 Tch = 25°C ID = 50A 8 6 VDS = 10V 20V 4 25V 2 10 20 30 40 Gate Charge Qg (nC) Rev.1.00, Aug.20.2004, page 4 of 6 50 Source Current IS (A) Gate-Source Voltage VGS (V) 2 Switching Characteristics (Typical) Ciss 0 Tc = 25°C Capacitance vs. Drain-Source Voltage (Typical) 3 2 0 VDS = 10V Pulse Test Drain Current ID (A) Tch = 25°C f = 1MHz VGS = 0V 10 102 7 5 4 3 Gate-Source Voltage VGS (V) 104 7 5 Capacitance (pF) 8 Switching Time (ns) Drain Current ID (A) 100 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) VGS = 0V Pulse Test 80 60 40 Tc = 125°C 75°C 25°C 20 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 On-State Resistance vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) Drain-Source On-State Resistance rDS(ON) (t°C) Drain-Source On-State Resistance rDS(ON) (25°C) FS50ASJ-03F 101 7 VGS = 10V I = 2A 5 D 4 Pulse Test 3 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 Threshold Voltage vs. Channel Temperature (Typical) 4.0 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 Breakdown Voltage vs. Channel Temperature (Typical) 1.4 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 0 50 100 Transient Thermal Impedance Characteristics 101 7 5 3 D = 1.0 2 0.5 100 0.2 7 5 0.1 3 2 0.05 0.02 0.01 Single Pulse 10–1 7 5 3 2 PDM tw D= T tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 150 Channel Temperature Tch (°C) Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Channel Temperature Tch (°C) –50 90% D.U.T. RGEN RL Vin Vout RGS 10% 10% 10% VDD 90% td(on) Rev.1.00, Aug.20.2004, page 5 of 6 tr 90% td(off) tf FS50ASJ-03F Package Dimensions MP-3A JEDEC Code Cu alloy 2.3 0.5 ± 0.1 0.1 ± 0.1 1.4 ± 0.2 1 max 2.5 min 6.1 ± 0.2 5.3 ± 0.2 0.76 ± 0.2 Lead Material 0.32 1 ± 0.2 6.6 Mass (g) (reference value) 10.4 max EIAJ Package Code 0.76 0.5 ± 0.2 2.3±0.2 Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE 1 2.3 Symbol Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Surface-mounted type Surface-mounted type Quantity Standard order code Taping 3000 Type name – T +Direction (1 or 2) +3 Plastic Magazine 75 Type name (Tube) Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 Standard order code example FS50ASJ-03F-T13 FS50ASJ-03F Sales Strategic Planning Div. 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