2N6259 Silicon NPN Transistor General Purpose, High Power Audio

2N6259
Silicon NPN Transistor
General Purpose, High Power Audio,
Disk Head Positioner for Linear Applications
Description:
The 2N6259 is a silicon NPN power transistor in a TO3 type package designed for high power audio,
disk head positioners, and other linear applications.
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector−Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857 W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2.0%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
150
−
−
V
OFF Characteristics
Collector−Emitter Sustaining Voltage
VCEO(sus) IC = 100mA, IB = 0, Note 1
Collector Cutoff Current
Emitter Cutoff Current
ICEX
VCE = 150V, VBE(off) = 1.5V
−
−
2.0
mA
ICEO
VCE = 130V, IB = 0
−
−
10
mA
ICBO
VCB = 150V, IE = 0
−
−
2.0
mA
IEBO
VEB = 7V, IC = 0
−
−
5.0
mA
hFE
VCE = 2V, IC = 8A
15
−
60
−
VCE = 4V, IC = 16A
10
−
−
−
IC = 8A, IB = 800mA
−
−
1.0
V
IC = 16A, IB = 3.2A
−
−
2.5
V
VCE = 2V, IC = 8A
−
−
2.0
V
ON Characteristics (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
VCE(sat)
VBE(on)
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2.0%.
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.215 (5.45)
.040 (1.02)
1.187
(30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case