392

NTE392 (NPN) & NTE393 (PNP)
Silicon Complementary Transistors
General Purpose
TO−3PN Type Package
Description:
The NTE392 (NPN) and NTE393 (PNP) are silicon complementary transistors in a TO−3PN type
package designed for general purpose power amplifier and switching applications.
Features:
D 25A Collector Current
D Low Leakage Current: ICEO = 1mA @ VCE = 60V
D Excellent DC Gain: hFE = 40 Typ @ 15A
D High Current Gain Bandwidth Product: hfe = 3 Min @ IC = 1A, f = 1MHz
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Unclamped Inductive Load, ESB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90mJ
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle  10%.
Rev. 2−15
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
−
−
V
OFF Characteristics
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0, Note 2
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
ICEO
VCE = 60V, IB = 0
−
−
1
mA
ICES
VCE = 100V, VEB = 0
−
−
0.7
mA
IEBO
VEB = 5V, IC = 0
−
−
1
mA
hFE
IC = 1.5A, VCE = 4V
25
−
−
IC = 15A, VCE = 4V
15
−
75
IC = 15A, IB = 1.5A
−
−
1.8
V
IC = 25A, IB = 5A
−
−
4
V
IC = 15A, VCE = 4V
−
−
2.0
V
IC = 25A, VCE = 4V
−
−
4.0
V
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter ON Voltage
VCE(sat)
VBE(on)
Dynamic Characteristics
Small−Signal Current Gain
hfe
IC = 1A, VCE = 10V, f = 1kHz
25
−
−
Current−Gain Bandwidth Product
fT
IC = 1A, VCE = 10V,
f = 1MHz, Note 3
3
−
−
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%.
Note 3. fT = |hfe| ftest
.189 (4.8)
.787
(20.0)
.614 (15.6)E
.590
(15.0)
.138
(3.5)
Dia
.889
(22.6)
B
.215 (5.45)
C
E
MHz