RSX1001T3 Diodes Schottky barrier diode RSX1001T3 zExternal dimensions (Unit : mm) zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 13.5MIN 1.2 zConstruction Silicon epitaxial planar 8.0±0.2 12.0±0.2 5.0±0.2 ① 8.0 10.0±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN Manufacture Date ① zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits Symbol VRM 30 VR 30 10 Io IFSM 150 150 Tj -40 to +150 Tstg (*1) Business frequencies, Rating of R-load, 1/2 lo per diode, TC=100℃ Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. - Typ. - Max. 0.45 500 Unit V µA θjc - - 2.5 ℃/W Conditions IF=5A VR=30V junction to case 1/3 RSX1001T3 Diodes zElectrical characteristic curves 1000000 10 Ta=25℃ Ta=75℃ Ta=-25℃ 0.1 100000 Ta=125℃ 10000 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 30 0 400 390 380 AVE:425.2mV AVE:402.0mV 400 1080 350 300 250 200 150 AVE:8.172uA σ:1.9469uA 100 1040 1020 1000 980 960 940 900 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 1000 1cyc Ifsm 8.3ms 200 150 100 50 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 1 trr DISPERSION MAP IFSM DISRESION MAP 100 t 100 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 IM=100mA IF=5A 8 10 1ms time Rth(j-a) 300us Rth(j-c) 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 1 10 1 0 1000 8.3ms 8.3ms 1cyc 100 AVE:17.2ns AVE:235.0A 0 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE trr(ns) RECOVERY TIME:trr(ns) 30 250 AVE:1006.7pF 920 0 300 30 Ta=25℃ f=1MHz VR=0V n=10pcs 1060 AVE:148.6uA 50 σ:1.6771mV 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1100 Ta=25℃ Ta=25℃ VR=30V VR=30V n=30pcs n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 410 370 PEAK SURGE FORWARD CURRENT:IFSM(A) 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 450 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=5A n=30pcs 100 10 0 600 500 420 PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 1 0.01 条件：f=1MHz f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125℃ 1 10000 Ta=150℃ Ta=150℃ DC D=1/2 Sin(θ＝180) 6 4 2 0.1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 5 10 15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 20 2/3 RSX1001T3 Diodes 6 DC D=1/2 4 Sin(θ＝180) 2 0 0A 0V 20 DC Io t T VR D=t/T VR=15V Tj=150℃ D=1/2 10 Sin(θ＝180) 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0A 0V 20 DC Io t T VR D=t/T VR=15V Tj=150℃ D=1/2 10 Sin(θ＝180) 0 0 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 REVERSE POWER DISSIPATION:PR (W) 30 30 10 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV No break at 30kV 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1