RENESAS RJJ0601JPN

RJJ0601JPN
Silicon P Channel MOS FET
High Speed Power Switching
REJ03G1602-0100
Rev.1.00
Nov 21, 2007
Features
• Low on-resistance
RDS(on) = 8.2 mΩ typ.
• Capable of 4.5 V gate drive
• High speed switching
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
D
2
1
1. Gate
2. Drain
(Flange)
3. Source
G
1
2
3
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
VGSS
Value
–60
±20
Unit
V
V
ID
ID (pulse) Note1
IDR
–90
–360
–90
A
A
A
–40
137
A
mJ
90
150
–55 to +150
W
°C
°C
3
Avalanche current
Avalanche energy
IAPNote
EARNote3
Channel dissipation
Channel temperature
Storage temperature
PchNote
Tch
Tstg
2
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
REJ03G1602-0100
Page 1 of 6
Rev.1.00
Nov 21, 2007
RJJ0601JPN
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
RDS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
VDF
Body-drain diode reverse recovery
time
Note:
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
RDS(on)
trr
4. Pulse test
REJ03G1602-0100
Page 2 of 6
Rev.1.00
Nov 21, 2007
Min
–60
±20
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
8.2
10
8800
950
600
150
25
23
25
30
290
135
Max
—
—
–10
±10
–2.5
10
15
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
—
—
–0.96
45
—
—
V
ns
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –60 V, VGS = 0
VGS = ±16 V, VDS = 0
VDS = –10 V, ID = –1 mANote4
ID = –45 A, VGS= –10 VNote4
ID = –45 A, VGS = –4.5 VNote4
VDS = –10 V, VGS = 0
f = 1 MHz
VDD = –25 V, VGS = –10 V,
ID = –90 A
VGS = –10 V, ID= –45 A,
VDD = –30 V, RG = 4.7 Ω
IF = –90 A, VGS = 0
IF = –90 A, VGS = 0,
diF/dt = 100 A/µs
RJJ0601JPN
Main Characteristics
Maximum Safe Operation Area
80
−100
1s
s(
m
ra
ho
Operation in
this area is
limited by RDS (on)
t)
(P
−1
n
tio
W
≤1
−0.1
0
s)
25
50
75
100
Case Temperature
125
−0.01
−0.1
150
Tc (°C)
−1000
−4.5 V
−10 V
−10
−3.0 V
−50
VGS = −2.7 V
−100
VDS = −10 V
Pulse Test
−10
−1
−0.1
Tc = 150°C
−0.01
25°C
−40°C
−0.001
Pulse Test
−5
0
−100
Typical Transfer Characteristics
Drain Current ID (A)
−100
−1
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Drain Current ID (A)
s
m
−10
Ta = 25°C
1 shot Pulse
0
−10
−0.0001
0
−1
−2
−3
−4
−5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
vs. Temperature
100
25
Drain to Source on State Resistance
RDS (on) (mΩ)
Drain to Source on State Resistance
RDS (on) (mΩ)
µs
10
20
0
e
Op
40
10
=
60
10 µs
PW
Drain Current ID (A)
−1000
DC
Channel Dissipation
100
1
Pch (W)
Power vs. Temperature Derating
Pulse Test
10
VGS = −4.5 V
−10 V
1
−1
−10
−100
Drain Current ID (A)
REJ03G1602-0100
Page 3 of 6
Rev.1.00
Nov 21, 2007
−1000
ID = −45 A
20
15
VGS = −4.5 V
10
5
−10 V
Pulse Test
0
−50
−25
0
25
50
75 100 125 150
Case Temperature Tc (°C)
RJJ0601JPN
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage VDS (V)
100000
Capacitance C (pF)
VGS = 0
f = 1 MHz
Ciss
10000
1000
Coss
Crss
100
−0
−10
−20
−30
−50
–4
–10
–8
–12
–20
VDD = –25 V
–10 V
–5 V
VDS
VGS
–30
ID = –90 A
–16
0
50
100
–40
200
150
Reverse Drain Current vs.
Source to Drain Voltage
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Gate Charge Qg (nC)
Pulse Test
–10 V
–50
VGS = 0 V
0
0
VDD = –5 V
–10 V
–25 V
Drain to Source Voltage VDS (V)
–100
Reverse Drain Current IDR (A)
−40
0
–0.4
–0.8
–1.2
–1.6
–2.0
250
L = 100 µH
VDD = –25 V
duty < 0.1 %
Rg ≥ 50 Ω
200
150
100
50
0
25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (°C)
Avalanche Test Circuit
Avalanche Waveform
VDS
Monitor
L
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
D. U. T
VDD
IAP
VDS
Vin
–15 V
50 Ω
ID
0
REJ03G1602-0100
Page 4 of 6
Rev.1.00
Nov 21, 2007
VDD
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
Normalized Transient Thermal Impedance γs (t)
RJJ0601JPN
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
0.05
θch - c(t) = γs (t) x θch - c
θch - c = 1.39°C/W, Tc = 25°C
0.02
0.01
0.01
PDM
D=
lse
t
ho
PW
T
PW
pu
T
1s
0.001
0.01
0.1
1
10
100
1000
Pulse Width PW (mS)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Switching Time Waveform
Vin
10%
D.U.T.
Rg
RL
VDD
= –30 V
Vin
–10 V
REJ03G1602-0100
Page 5 of 6
90%
Rev.1.00
Nov 21, 2007
90%
90%
Vout
10%
td(on)
tr
10%
td(off)
tf
RJJ0601JPN
Package Dimensions
Package Name
TO-220AB
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Previous Code
TO-220AB / TO-220ABV
MASS[Typ.]
1.8g
Unit: mm
2.79 ± 0.2
11.5 Max
10.16 ± 0.2
9.5
φ 3.6
1.26 ± 0.15
15.0 ± 0.3
18.5 ± 0.5
1.27
6.4
+0.2
–0.1
8.0
4.44 ± 0.2
+0.1
–0.08
7.8 ± 0.5
1.5 Max
0.76 ± 0.1
2.54 ± 0.5
14.0 ± 0.5
2.7 Max
0.5 ± 0.1
2.54 ± 0.5
Ordering Information
Part No.
RJJ0601JPN-00-02
REJ03G1602-0100
Page 6 of 6
Quantity
500 pcs
Rev.1.00
Nov 21, 2007
Shipping Container
Box (Sack)
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2