CPW4-1200-S005B

CPW4-1200-S005B
Silicon Carbide Schottky Diode Chip
Z-Rec ® Rectifier
Features
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VRRM =
1200 V
IF
5A
Q c
Chip Outline
=
= 27 nC
1.2kVSchottky Rectifier
Zero Reverse Recovery
Zero Forward Recovery
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Part Number
Die Size
Anode
Cathode
CPW4-1200-S005B
1.69 x 1.69 mm2
Al
Ni/Ag
Maximum Ratings
4-1200-S
Datasheet: CPW
005 Rev. B
Symbol
Parameter
Value
Unit
VRRM
Repetitive Peak Reverse Voltage
1200
V
VRSM
Surge Peak Reverse Voltage
1300
V
VR
DC Peak Blocking Voltage
1200
V
IF
Continuous Forward Current
5
A
TJ=175˚C
1
IFRM
Repetitive Peak Forward Surge Current
26
18
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
1
IFSM
Non-Repetitive Forward Surge Current
46
36
A
TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse
1
IF,Max
Non-Repetitive Peak Forward Current
400
320
A
TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse
-55 to
+175
˚C
325
˚C
TJ , Tstg
TProc
Operating Junction and Storage Temperature
Maximum Processing Temperature
Test Conditions
Note
10 min. maximum
1. Assumes RθJC Thermal Resistance of 1.85˚C/W or less
Subject to change without notice.
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1
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF
Forward Voltage
1.4
1.9
1.8
3
V
IF = 5 A TJ=25°C
IF = 5 A TJ=175°C
Fig. 1
IR
Reverse Current
20
40
150
300
μA
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
27
nC
VR = 800 V, IF = 5A
di/dt = 200 A/μs
TJ = 25°C
Fig. 3
C
Total Capacitance
390
27
20
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
VR = 800 V, TJ = 25˚C, f = 1 MHz
Fig. 4
Mechanical Parameters
Parameter
Typ.
Unit
Die Size
1.69 x 1.69
mm
Anode Pad Size
1.40 x 1.40
mm
Anode Pad Opening
1.12 x 1.12
mm
Thickness
377 ± 10%
μm
Wafer Size
100
mm
4
μm
1.4
μm
Anode Metalization (Al)
Cathode Metalization (Ni/Ag)
Frontside Passivation
2
Note
CPW4-1200-S005 Rev. B
Polyimide
Typical Characteristics
10
1000
9
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
8
800
700
Current
I (μA)(µA)
6
5
R
F
Current
I (A) (A)
7
900
4
600
500
400
3
300
2
200
1
100
0
TJ=-55°C
TJ= 25°C
TJ= 75°C
TJ =125°C
TJ =175°C
0
0
0.5
1
1.5
2
2.5
3
3.5
0
500
1000
1500
2000
Voltage (V)
VR (V)
VF (V)(V)
Voltage
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
35
450
400
30
350
25
300
250
C (pF)
QC (nC)
20
15
200
150
10
100
5
50
0
0
0
200
400
600
800
1000
VR (V)
Figure 3. Total Capacitance Charge vs. Reverse Voltage
3
CPW4-1200-S005 Rev. B
0.1
1
10
100
VR (V)
Figure 4. Capacitance vs. Reverse Voltage
1000
Chip Dimensions
B
C
symbol
A
D
dimension
mm
inch
A
1.69
0.067
B
1.69
0.067
C
1.12
0.044
D
1.12
0.044
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive
2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
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REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency
(ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree
representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh
Article 67) is also available upon request.
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This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human
body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not
limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency
medical equipment, aircraft navigation or communication or control systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
CPW4 Spice models: http://response.cree.com/Request_Diode_model
SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
4
CPW4-1200-S005 Rev. B, 04-15
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power