Cree C3D08065A Silicon Carbide Schottky Diode - Zero

C3D08065A
VRRM
Silicon Carbide Schottky Diode
IF (TC=135˚C)
Z-Rec Rectifier
®
=
11 A
Package
650-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
TO-220-2
Benefits
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•
•
•
•
650 V
Qc = 20 nC
Features
•
•
•
•
•
•
•
=
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
CASE
PIN 2
Applications
•
•
•
Switch Mode Power Supplies Power Factor Correction
Motor Drives
Part Number
Package
Marking
C3D08065A
TO-220-2
C3D08065
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
650
V
VRSM
Surge Peak Reverse Voltage
650
V
VDC
DC Blocking Voltage
650
V
Continuous Forward Current
24
11
8
A
TC=25˚C
TC=135˚C
TC=152˚C
37.5
25.5
A
TC=25˚C, tP = 10 ms, Half Sine Wave
TC=110˚C, tP = 10 ms, Half Sine Wave
IF
Note
Fig. 3
IFRM
Repetitive Peak Forward Surge Current
IFSM
Non-Repetitive Peak Forward Surge Current
71
60
A
TC=25˚C, tp = 10 ms, Half Sine Wave
TC=110˚C, tp = 10 ms, Half Sine Wave
Fig. 8
IF,Max
Non-Repetitive Peak Forward Surge Current
650
530
A
TC=25˚C, tP = 10 µs, Pulse
TC=110˚C, tP = 10 µs, Pulse
Fig. 8
Ptot
Power Dissipation
107
46.5
W
TC=25˚C
TC=110˚C
Fig. 4
Operating Junction and Storage Temperature
-55 to
+175
˚C
1
8.8
Nm
lbf-in
TJ , Tstg
TO-220 Mounting Torque
1
Value
C3D08065A Rev. B
M3 Screw
6-32 Screw
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
VF
Forward Voltage
1.5
2.1
1.8
2.4
V
IF = 8 A TJ=25°C
IF = 8 A TJ=175°C
Fig. 1
IR
Reverse Current
10
12
51
204
μA
VR = 650 V TJ=25°C
VR = 650 V TJ=175°C
Fig. 2
QC
Total Capacitive Charge
20
nC
VR = 650 V, IF = 8A
di/dt = 500 A/μs
TJ = 25°C
Fig. 5
C
Total Capacitance
395
37
32
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
EC
Capacitance Stored Energy
3.0
μJ
VR = 400 V
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance from Junction to Case
Typ.
Unit
Note
1.4
°C/W
Fig. 9
Typical Performance
20
12
10
25
TJ = 25 °C
TJ = 75 °C
TJ = 125 °C
IR (mA)
14
F
FowardICurrent,
(A) IF (A)
16
TJ = -55 °C
Reverse Leakage Current, IRR (mA)
18
30
TJ = 175 °C
8
6
4
2
TJ = 175 °C
TJ = 125 °C
15
TJ = 75 °C
10
TJ = 25 °C
TJ = -55 °C
5
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 200 400 600 800 1000 1200 FowardVVoltage,
(V) VF (V)
F
Figure 1. Forward Characteristics
2
20
C3D08065A Rev. B
3.5
4.0
0
100 200 300 400 500 600 700 800 900 1000
ReverseVVoltage,
(V) VR (V)
R
Figure 2. Reverse Characteristics
Typical Performance
80
120
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
70
50
80
PTot(W)
(W)
PTOT
IF(peak)
(A)
IF (A)
60
100
40
30
60
40
20
20
10
0
25
50
75
100
125
150
0
175
25
T
˚C
TCC(°C)
125
150
175
Figure 4. Power Derating
450
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
400
350
20
Capacitance
C (pF)(pF)
CapacitiveQCharge,
(nC) QC (nC)
C
100
C
Conditions:
TJ = 25 °C
25
75
˚C
TTC (°C)
Figure 3. Current Derating
30
50
15
10
300
250
200
150
100
5
50
0
0
100
200
300
400
500
600
ReverseVVoltage,
(V) VR (V)
R
Figure 5. Total Capacitance Charge vs. Reverse Voltage
3
C3D08065A Rev. B
700
0
0
1
10
(V) VR (V)
ReverseVVoltage,
R
Figure 6. Capacitance vs. Reverse Voltage
100
1000
Typical Performance
1,000
8
6
IIFSM (A)
(A)
5
FSM
4
C
Capacitance StoredE Energy,
µJ)
(mJ) EC (µ
7
3
100
TJ = 25 °C
TJ = 110 °C
2
1
0
0
100
200
300
400
500
600
10
10E-6
700
ReverseVVoltage,
(V) VR (V)
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
Figure 7. Capacitance Stored Energy
Thermal Resistance
(oC/W)
Thermal Resistance
(˚C/W)
1E-3
tp (s)
Time,
tp (s)
R
1
100E-6
0.5
0.3
0.1
100E-3
0.05
0.02
SinglePulse
10E-3
0.01
1E-3
1E-6
10E-6
100E-6
1E-3
Time,
tp (s)
T (Sec)
10E-3
Figure 9. Transient Thermal Impedance
4
C3D08065A Rev. B
100E-3
1
10E-3
Package Dimensions
Inches
POS
Package TO-220-2
A
B
A
F
J
C
P
CP OS
Q
D A
E B
B
D
X
S
E
Y
1 2
G
T
Z
U
H
V
L
M
W
N
PIN 1
CASE
PIN 2
F C
G D
H
E
F
J G
L H
Max
Min
Max
.381
.410
9.677
10.414
.235
Inc hes
.100
M in
M ax
.395.223 .410
.255
5.969
M illim eters
.120
2.540
M in
M ax
.337
5.664
10.033 10.414
6.477
.235.590 .255
.615
5.969
14.986
6.477
15.621
.102.143
.337
1.105
.590
.500
.149
2.591
.153
8.560
1.147
2.845
3.632
3.886
8.560
28.067
29.134
15.494
12.700
13.970
3.886
29.134 R 0.197
.028
.195
.045
.165
.195
.170.048
S Q
T S
T
U
U
V
V
WW
z
Z
.112
.337
.610
14.986
.550
.153
3.785
R1.147
0.197 28.626
1.127
.635
.530.025 .550 .036
13.462 13.970
R 0.010
.045
.055 R 0.2541.143
M J
L
N
M
P
N
Q P
X X
Y Y
Millimeters
Min
8.560
.914
1.397
.914
4.953
1.397
4.191
5.207
1.219
4.572
5.207
.180
.711
.205
1.143
.185
4.953
.054
4.318
.0483°
.054
6°
1.219
3°
1.371
6°
3° 3°
5°
5°
5°3°
5°
3°
5°
2.388
2.794
.356
.533
6°
3°
6° 3°
3°
6°
3°
.110
2.54
.025
.356
5.5°3°
10.033
.410
5°3°
10.414
9.779
10.414
3.302
.150
3.810
3.302
3.810
3°
.036
3.048
.055
.205
3°
5°
.094
.100
.110
.014.014 .021
3° 3°
5°
.395.385 .410
.130
.150
.130
4.699
1.372
6°
2.794
.635
5.5°
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
Recommended Solder Pad Layout
TO-220-2
Part Number
Package
Marking
C3D08065A
TO-220-2
C3D08065
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
C3D08065A Rev. B
Diode Model
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
VfT = VT + If * RT
VT = 0.95 + (TJ * -1.2*10-3)
RT = 0.054 + (TJ * 5.5*10-4)
VT
RT
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
Notes
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RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
from the Product Documentation sections of www.cree.com.
•
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, or air traffic control systems.
Related Links
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•
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Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
Schottky diode Spice models: http://response.cree.com/Request_Diode_model
SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns
Copyright © 2015 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
6
C3D08065A Rev. B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power