Cree CPWR-AN08 Application Considerations for SiC MOSFETs

CAS100H12AM1 Summary
Device Uses
Cree introduces the industry’s first
fully qualified and production ready
All-Silicon Carbide power module.
The module, rated at 100A current
handling and 1200V blocking, allows
higher efficiency, compact and lighter
weight systems that can result in
lower total system costs.
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High-Power converters
Motor Drives
Solar Inverters
UPS and SMPS
Induction Heating
Mil/Aero
Key Specifications
Key Specifications
• Package size
50 x 89 x 25 mm3
• Blocking voltage: 1200V
• Current Rating: 100A
• RDS(on) :
(TC ≤ 100C)
16 mΩ
Benefits
Gate Driver boards Available
(Top View)
(Bottom View)
• Enables compact and lightweight
systems
• High efficiency operation
• Mitigate over-voltage protection
• Ease of transistor gate controlents
Competitive Comparison
(TJ = 150 ˚C )
Supplier, P/N
Switch / Diode
VDS (V)
ID (A)
ESW (mJ)
Qrr (nC)
VISOL (kV)
Cree,
CAS100H12AM1
SiC MOSFET
SiC Schottky Diode
1200V
105
3.5
1.6
6.0
Infineon,
FF100R12RT4
IGBT4
EC4 Diode
1200V
100
20.5
19
4.0
1
Half-bridge module with Cree SiC MOSFET and SiC Diodes
Module Construction
Equivalent Electrical Circuit
D1
• Populated with commercially
released and qualified Cree SiC
MOSFETs and Diodes
• AlSiC baseplate decreases weight
and increases temperature/
power cycling capability
• Si3N4 AMB substrate provides
rugged mechanical construction
RGint
G1
0 - 1K
$430
1 - 5K
$395
5 - 10K
$370
> 10K Contact Cree
Power_sales@Cree.com
2
6.8V
Q1
VR2
22V
G1
RTN
S1/D2
RGint
G2
G2
RTN
Suggested Resale Price
D1
VR1
D2
VR1
6.8V
VR2
22V
Q2
Gate Driver Boards
S2
Target Customer
• Typical power ranges from 10kW to
50kW per phase;>30kW per system
• Looking for higher efficiency, less
system volume and weight
• Looking to increase Switching
Frequency. (30kHz - 100kHz)
• Bus voltages up to 960V