mmbta14 - Semtech

MMBTA14
NPN Silicon Epitaxial Planar Transistors
for general purpose applications, darlington
transistor.
The transistor is subdivided into one group
according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-236 Plastic Package
Absolute Maximum Ratings (Ta=25 OC)
Symbol
Value
Unit
Collector Emitter Voltage
VCES
30
V
Collector Base Voltage
VCBO
30
V
Emitter Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Power Dissipation
Ptot
200
mW
Tj
150
O
TStg
-55 to +150
O
Junction Temperature
Storage Temperature Range
C
C
Characteristics at Tamb=25 OC
Symbol
Min.
Max.
Unit
at VCE=5V, IC=10mA
hFE
10000
-
-
at VCE=5V, IC=100mA
hFE
20000
-
-
V(BR)CES
30
-
V
ICBO
-
100
nA
IEBO
-
100
nA
VCE (sat)
-
1.5
V
VBE(on)
-
2
V
fT
125
-
MHz
DC Current Gain
Collector Emitter Breakdown Voltage
at IC=100µA
Collector Cutoff Current
at VCB=30V
Emitter Cutoff Current
at VEB=10V
Collector Emitter Saturation Voltage
at IC=100mA, IB=0.1mA
Base Emitter On Voltage
at IC=100mA, VCE=5V
Current Gain Bandwidth Product
at VCE=5V, IC=10mA, f=100MHz
SEMTECH ELECTRONICS LTD.
®
Dated : 16/03/2015
Rev:01