MMBTA63 / MMBTA64 PNP Silicon Epitaxial Planar Transistor for general purpose application, darlington transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 10 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Tj 150 O TStg - 55 to + 150 O Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter DC Current Gain at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 100 mA at -VCE = 5 V, -IC = 100 mA Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 10 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter On Voltage at -VCE = 5 V, -IC = 100 mA Transition Frequency at -VCE = 5 V, IE = 10 mA Symbol Min. Max. Unit hFE hFE hFE hFE 5000 10000 10000 20000 - - -ICBO - 100 nA -IEBO - 100 nA -V(BR)CEO 30 - V -VCE(sat) - 1.5 V -VBE(on) - 2 V fT 125 - MHz MMBTA63 MMBTA64 MMBTA63 MMBTA64 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBTA63 / MMBTA64 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01