MMBT9018 NPN Silicon Epitaxial Planar Transistor for AM/FM amplifier and local oscillator of FM/VHF tuner applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5 V Collector Current IC 50 mA Power Dissipation Ptot 200 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C Electrical Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE 72 97 - 108 190 - ICBO - - 50 nA Collector Base Breakdown Voltage at IC = 100 µA V(BR)CBO 30 - - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 15 - - V Emitter Base Breakdown Voltage at IE = 100 µA V(BR)EBO 5 - - V Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA VCE(sat) - - 0.5 V Cob - 1.3 1.7 pF fT 700 1100 - MHz DC Current Gain at VCE = 5 V, IC = 1 mA Current Gain Group G H Collector Base Cutoff Current at VCB = 12 V Collector Base Capacitance at VCB = 10 V, f = 1 MHz Gain Bandwidth Product at VCE = 5 V, IC = 5 mA SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 19/06/2010 Rev:02 MMBT9018 Pc-Ta Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 19/06/2010 Rev:02