uPD75P0016 DS - Renesas Electronics

To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD75P0016
4-BIT SINGLE-CHIP MICROCONTROLLER
The µPD75P0016 replaces the µPD750008’s internal mask ROM with a one-time PROM and features expanded
ROM capacity.
Because the µPD75P0016 supports programming by users, it is suitable for use in prototype testing for system
development using the µPD750004, 750006, or 750008 products, and for use in small-lot production.
Detailed information about product features and specifications can be found in the following document
µPD750008 User's Manual: U10740E
FEATURES
• Compatible with µPD750008
• Memory capacity:
• PROM : 16384 × 8 bits
• RAM
: 512 × 4 bits
• Can operate in same power supply voltage as the mask ROM version µPD750008
• VDD = 2.2 to 5.5 V
• Supports QTOP™ microcontroller
Remark QTOP Microcontroller is the general name for a total support service that includes imprinting, marking,
screening, and verifying one-time PROM single-chip microcontrollers offered by NEC Electronics.
ORDERING INFORMATION
Part number
Package
ROM (× 8 bits)
µPD75P0016CU
42-pin plastic shrink DIP (600 mil, 1.778-mm pitch)
µPD75P0016CU-A
42-pin plastic shrink DIP (600 mil, 1.778-mm pitch)
16384
µPD75P0016GB-3BS-MTX
44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch)
16384
µPD75P0016GB-3BS-MTX-A
44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch)
16384
Caution On-chip pull-up resistors by mask option cannot be provided.
Remark Products with “-A” at the end of the part number are lead-free products.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. U10328EJ3V3DS00 (3rd edition)
Date Published August 2005 N CP(K)
Printed in Japan
The mark
shows major revised points.
16384
µPD75P0016
FUNCTION LIST
Item
Function
• 0.95, 1.91, 3.81, 15.3 µs (main system clock: at 4.19 MHz operation)
• 0.67, 1.33, 2.67, 10.7 µs (main system clock: at 6.0 MHz operation)
• 122 µs (subsystem clock: at 32.768 kHz operation)
Instruction execution time
On-chip memory
PROM
16384 × 8 bits
RAM
512 × 4 bits
• In 4-bit operation: 8 × 4 banks
• In 8-bit operation: 4 × 4 banks
General register
I/O port
CMOS input
CMOS I/O
N-ch open drain I/O
Total
2
8
Connection of on-chip pull-up resistor specifiable by software: 7
18
Direct LED drive capability
Connection of on-chip pull-up resistor specifiable by software: 18
8
Direct LED drive capability
13 V withstand voltage
34
Timer
4 channels
• 8-bit timer/event counter: 1 channel
• 8-bit timer counter: 1 channel
• Basic interval timer/watchdog timer: 1 channel
• Watch timer: 1 channel
Serial interface
• 3-wire serial I/O mode ... Switching of MSB/LSB-first
• 2-wire serial I/O mode
• SBI mode
Bit sequential buffer (BSB)
16 bits
Clock output (PCL)
• Φ, 524, 262, 65.5 kHz (main system clock: at 4.19 MHz operation)
• Φ, 750, 375, 93.8 kHz (main system clock: at 6.0 MHz operation)
Buzzer output (BUZ)
• 2, 4, 32 kHz (main system clock: at 4.19 MHz operation or subsystem clock:
at 32.768 kHz operation)
• 2.93, 5.86, 46.9 kHz (main system clock: at 6.0 MHz operation)
Vectored interrupt
External: 3 Internal: 4
Test input
External: 1 Internal: 1
System clock oscillation circuit
• Main system clock oscillation ceramic/crystal oscillation circuit
• Subsystem clock oscillation crystal oscillation circuit
Standby function
STOP/HALT mode
Operating ambient temperature
TA = –40 to +85˚C
Supply voltage
VDD = 2.2 to 5.5 V
Package
42-pin plastic shrink DIP (600 mil, 1.778-mm pitch)
44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch)
Data Sheet U10328EJ3V3DS
µPD75P0016
TABLE OF CONTENTS
1.
PIN CONFIGURATION ........................................................................................................................ 4
2.
BLOCK DIAGRAM ............................................................................................................................. 6
3.
PIN FUNCTIONS ................................................................................................................................ 7
3.1
3.2
3.3
3.4
4.
Port Pins ..................................................................................................................................................... 7
Non-port Pins ............................................................................................................................................. 8
I/O Circuits for Pins ................................................................................................................................... 9
Handling of Unused Pins ........................................................................................................................ 11
SWITCHING BETWEEN MK I AND MK II MODES .......................................................................... 12
4.1
4.2
Differences between Mk I Mode and Mk II Mode ................................................................................... 12
Setting of Stack Bank Selection (SBS) Register ................................................................................... 13
5.
DIFFERENCES BETWEEN µPD75P0016 AND µPD750004, 750006, AND 750008 ...................... 14
6.
MEMORY CONFIGURATION ........................................................................................................... 15
7.
INSTRUCTION SET .......................................................................................................................... 17
8.
ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY ................................................... 28
8.1
8.2
8.3
8.4
9.
Operation Modes for Program Memory Write/Verify ............................................................................ 28
Steps in Program Memory Write Operation .......................................................................................... 29
Steps in Program Memory Read Operation ........................................................................................... 30
One-Time PROM Screening .................................................................................................................... 31
ELECTRICAL SPECIFICATIONS ..................................................................................................... 32
10. CHARACTERISTIC CURVES (REFERENCE VALUE) .................................................................... 46
11. PACKAGE DRAWINGS .................................................................................................................... 48
12. RECOMMENDED SOLDERING CONDITIONS ................................................................................ 50
APPENDIX A. FUNCTION LIST OF µPD75008, 750008, 75P0016 ....................................................... 52
APPENDIX B. DEVELOPMENT TOOLS ................................................................................................. 54
APPENDIX C. RELATED DOCUMENTS ................................................................................................ 58
Data Sheet U10328EJ3V3DS
3
µPD75P0016
1. PIN CONFIGURATION (Top View)
• 42-pin plastic shrink DIP (600 mil, 1.778-mm pitch)
µPD75P0016CU
µPD75P0016CU-A
XT1
1
42
VSS
XT2
2
41
P40/D0
RESET
3
40
P41/D1
X1
4
39
P42/D2
X2
5
38
P43/D3
P33/MD3
6
37
P50/D4
P32/MD2
7
36
P51/D5
P31/MD1
8
35
P52/D6
P30/MD0
9
34
P53/D7
P81
10
33
P60/KR0
P80
11
32
P61/KR1
P03/SI/SB1
12
31
P62/KR2
P02/SO/SB0
13
30
P63/KR3
P01/SCK
14
29
P70/KR4
P00/INT4
15
28
P71/KR5
P13/TI0
16
27
P72/KR6
P12/INT2
17
26
P73/KR7
P11/INT1
18
25
P20/PTO0
P10/INT0
19
24
P21/PTO1
VPPNote
20
23
P22/PCL
VDD
21
22
P23/BUZ
Note Directly connect VPP to VDD in the normal operation mode.
P72/KR6
P71/KR5
P70/KR4
P63/KR3
P62/KR2
P61/KR1
P60/KR0
P53/D7
P52/D6
P51/D5
44 43 42 41 40 39 38 37 36 35 34
1
33
2
32
3
31
4
30
5
29
6
28
7
27
8
26
9
25
10
24
P13/TI0
P00/INT4
P01/SCK
P02/SO/SB0
P03/SI/SB1
P80
P81
P30/MD0
P31/MD1
P32/MD2
11
23
12 13 14 15 16 17 18 19 20 21 22
P33/MD3
NC
P43/D3
P42/D2
P41/D1
P40/D0
VSS
P50/D4
VPPNote
P10/INT0
P11/INT1
P12/INT2
NC
µPD75P0016GB-3BS-MTX-A
XT1
XT2
RESET
X1
X2
µPD75P0016GB-3BS-MTX
P73/KR7
P20/PTO0
P21/PTO1
P22/PCL
P23/BUZ
VDD
• 44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch)
Note Directly connect VPP to VDD in the normal operation mode.
4
Data Sheet U10328EJ3V3DS
µPD75P0016
PIN IDENTIFICATIONS
P00-P03
: Port0
SCK
: Serial Clock
P10-P13
: Port1
SI
: Serial Input
P20-P23
: Port2
SO
: Serial Output
P30-P33
: Port3
SB0, SB1
: Serial Data Bus 0,1
P40-P43
: Port4
RESET
: Reset
P50-P53
: Port5
TI0
: Timer Input 0
P60-P63
: Port6
PTO0, PTO1
: Programmable Timer Output 0, 1
P70-P73
: Port7
BUZ
: Buzzer Clock
P80, P81
: Port8
PCL
: Programmable Clock
KR0-KR7
: Key Return 0-7
INT0, 1, 4
: External Vectored Interrupt 0, 1, 4
VDD
: Positive Power Supply
INT2
: External Test Input 2
VSS
: Ground
X1, X2
: Main System Clock Oscillation 1, 2
VPP
: Programming Power Supply
XT1, XT2
: Subsystem Clock Oscillation 1, 2
NC
: No Connection
MD0-MD3
: Mode Selection 0-3
D0-D7
: Data Bus 0-7
Data Sheet U10328EJ3V3DS
5
µPD75P0016
2. BLOCK DIAGRAM
BIT SEQ.
BUFFER (16)
BASIC INTERVAL
TIMER/
WATCHDOG
TIMER
PROGRAM
COUNTER (14)
INTBT
SP (8)
CY
8-BIT
TIMER/EVENT
COUNTER #0
TI0/P13
PTO0/P20
INTT0
ALU
BANK
CLOCKED
SERIAL
INTERFACE
SO/SB0/P02
SCK/P01
P00-P03
PORT1
4
P10-P13
PORT2
4
P20-P23
PORT3
4
P30/MD0-P33/MD3
PORT4
4
P40/D0-P43/D3
PORT5
4
P50/D4-P53/D7
PORT6
4
P60-P63
PORT7
4
P70-P73
PORT8
2
P80, P81
GENERAL
REGISTER
INTT1
SI/SB1/P03
4
TOUT0
8-BIT TIMER
COUNTER
#1
PTO1/P21
PORT0
SBS
PROGRAM
MEMORY
(PROM)
16384 × 8 BITS
DECODE
AND
CONTROL
DATA
MEMORY
(RAM)
512 × 4 BITS
TOUT0
INTCSI
INT0/P10
INT1/P11
INTERRUPT
CONTROL
INT2/P12
INT4/P00
KR0/P60KR7/P73
8
fx/2N
BUZ/P23
WATCH
TIMER
INTW
CLOCK
CLOCK
OUTPUT
DIVIDER
CONTROL
PCL/P22
6
CPU CLOCK
Φ
SYSTEM CLOCK
GENERATOR
SUB
MAIN
XT1XT2
X1 X2
STAND BY
CONTROL
Data Sheet U10328EJ3V3DS
VPP VDD VSS RESET
µPD75P0016
3. PIN FUNCTIONS
3.1 Port Pins
Pin name
I/O
Shared by
Function
8-bit
I/O
When
reset
I/O circuit
type Note 1
This is a 4-bit input port (PORT0).
For P01 to P03, on-chip pull-up resistor connections
are software-specifiable in 3-bit units.
×
Input
<B>
P00
I
INT4
P01
I/O
SCK
P02
I/O
SO/SB0
<F>-B
P03
I/O
SI/SB1
<M>-C
P10
I
INT0
P11
INT1
P12
INT2
P13
TI0
P20
I/O
PTO0
P21
PTO1
P22
PCL
P23
BUZ
P30
I/O
MD0
P31
MD1
P32
MD2
P33
MD3
P40 Note 2
I/O
D0
P41 Note 2
D1
P42 Note 2
D2
P43 Note 2
D3
P50 Note 2
I/O
D4
P51 Note 2
D5
P52 Note 2
D6
P53 Note 2
D7
P60
I/O
KR0
P61
KR1
P62
KR2
P63
KR3
P70
I/O
KR4
P71
KR5
P72
KR6
P73
KR7
P80
P81
I/O
—
—
<F>-A
This is a 4-bit input port (PORT1).
On-chip pull-up resistor connections are softwarespecifiable in 4-bit units.
P10/INT0 can select noise elimination circuit.
×
Input
<B>-C
This is a 4-bit I/O port (PORT2).
On-chip pull-up resistor connections are softwarespecifiable in 4-bit units.
×
Input
E-B
This is a programmable 4-bit I/O port (PORT3).
Input and output can be specified in single-bit
units. On-chip pull-up resistor connections are
software-specifiable in 4-bit units.
×
Input
E-B
This is an N-ch open-drain 4-bit I/O port (PORT4).
In the open-drain mode, withstands up to 13 V.
High
impedance
M-E
This is an N-ch open-drain 4-bit I/O port (PORT5).
In the open-drain mode, withstands up to 13 V.
High
impedance
M-E
This is a programmable 4-bit I/O port (PORT6).
Input and output can be specified in single-bit units.
On-chip pull-up resistor connections are softwarespecifiable in 4-bit units.
Input
<F>-A
This is a 4-bit I/O port (PORT7).
On-chip pull-up resistor connections are softwarespecifiable in 4-bit units.
Input
<F>-A
Input
E-B
This is a 2-bit I/O port (PORT8).
On-chip pull-up resistor connections are softwarespecifiable in 2-bit units.
×
Notes 1. Circuit types enclosed in brackets indicate Schmitt triggered inputs.
2. Low-level input current leakage increases when input instructions or bit manipulation instructions are executed.
Data Sheet U10328EJ3V3DS
7
µPD75P0016
3.2 Non-port Pins
Pin name
I/O
Shared by
Function
When
reset
I/O circuit
type Note 1
TI0
I
P13
External event pulse input to timer/event counter
Input
<B>-C
PTO0
O
P20
Timer/event counter output
Input
E-B
P21
Timer counter output
Input
<F>-A
PTO1
PCL
P22
Clock output
BUZ
P23
Outputs any frequency (for buzzer or system clock trimming)
P01
Serial clock I/O
SO/SB0
P02
Serial data output
Serial data bus I/O
<F>-B
SI/SB1
P03
Serial data input
Serial data bus I/O
<M>-C
SCK
I/O
INT4
I
P00
Edge-triggered vectored interrupt input
(Detects both rising and falling edges).
INT0
I
P10
<B>
INT1
P11
Edge-triggered vectored interrupt input With noise eliminator
(detected edge is selectable).
/asynch selectable
INT0/P10 can select noise elimination
circuit.
Asynch
INT2
P12
Rising edge-triggered testable input
Input
<B>-C
Asynch
KR0-KR3
I
P60-P63
Falling edge-triggered testable input
Input
<F>-A
KR4-KR7
I
P70-P73
Falling edge-triggered testable input
Input
<F>-A
X1
I
—
—
—
X2
—
Ceramic/crystal resonator connection for main system clock.
If using an external clock, input it to X1 and input the
inverted clock to X2.
—
Crystal resonator connection for subsystem clock.
If using an external clock, input it to XT1 and input the inverted clock to X2. XT1 can be used as a 1-bit (test) input.
—
—
XT1
I
XT2
—
RESET
I
—
System reset input (low level active)
—
<B>
MD0-MD3
I
P30-P33
Mode selection for program memory (PROM) write/verify.
Input
E-B
I/O
P40-P43
Data bus pin for program memory (PROM) write/verify.
Input
M-E
D0-D3
D4-D7
P50-P53
VPP Note 2
—
—
Programmable voltage supply in program memory (PROM)
write/verify mode.
In normal operation mode, connect directly to VDD.
Apply +12.5 V in PROM write/verify mode.
—
—
VDD
—
—
Positive power supply
—
—
VSS
—
—
Ground potential
—
—
Notes 1. Circuit types enclosed in brackets indicate Schmitt triggered inputs.
2. During normal operation, the VPP pin will not operate normally unless connected to VDD pin.
8
Data Sheet U10328EJ3V3DS
µPD75P0016
3.3 I/O Circuits for Pins
The I/O circuits for the µPD75P0016’s pin are shown in schematic diagrams below.
TYPE A
TYPE D
VDD
VDD
Data
P-ch
OUT
P-ch
IN
Output
disable
N-ch
N-ch
Push-pull output that can be set to high impedance output
(with both P-ch and N-ch OFF).
CMOS standard input buffer
TYPE B
TYPE E-B
VDD
P.U.R.
P.U.R.
enable
IN
P-ch
Data
IN/OUT
Type D
Output
disable
Type A
Schmitt trigger input with hysteresis characteristics.
P.U.R. : Pull-Up Resistor
TYPE B-C
TYPE F-A
VDD
VDD
P.U.R.
P-ch
P.U.R.
P.U.R.
enable
P.U.R.
enable
P-ch
Data
IN/OUT
Type D
IN
Output
disable
Type B
P.U.R. : Pull-Up Resistor
P.U.R. : Pull-Up Resistor
(Continued)
Data Sheet U10328EJ3V3DS
9
µPD75P0016
TYPE F-B
TYPE M-E
VDD
IN/OUT
P.U.R.
P.U.R.
enable
output
disable
(P)
P-ch
data
N-ch
(+13 V)
output
disable
VDD
VDD
P-ch
IN/OUT
Input
instruction
data
P.U.R.Note
output
disable
N-ch
Voltage
limitation
(+13 V)
circuit
output
disable
(N)
Note
P.U.R. : Pull-Up Resistor
Pull-up resistor that operates only when an input
instruction has been executed. (Current flows
from VDD to the pins when at low level)
TYPE M-C
VDD
P.U.R.
P.U.R.
enable
P-ch
IN/OUT
data
N-ch
output
disable
P.U.R. : Pull-Up Resistor
10
P-ch
Data Sheet U10328EJ3V3DS
µPD75P0016
3.4 Handling of Unused Pins
Table 3-1. Handling of Unused Pins
Pin
Recommended connection
P00/INT4
Connect to VSS or VDD
P01/SCK
Individually connect to VSS or VDD via resistor
P02/SO/SB0
P03/SI/SB1
Connect to VSS
P10/INT0-P12/INT2
Connect to VSS or VDD
P13/TI0
P20/PTO0
P21/PTO1
Input mode
: individually connect to VSS or VDD
via resistor
Output mode : open
P22/PCL
P23/BUZ
P30/MD0-P33/MD3
P40/D0-P43/D3
Connect to VSS
P50/D4-P53/D7
P60/KR0-P63/KR3
P70/KR4-P73/KR7
Input mode
: individually connect to VSS or VDD
via resistor
Output mode : open
P80, P81
XT1Note
Note
Connect to VSS
XT2
Open
VPP
Make sure to connect directly to VDD
Note When the subsystem clock is not used, set SOS. 0 to 1 (not to use the internal feedback resistor).
Data Sheet U10328EJ3V3DS
11
µPD75P0016
4. SWITCHING BETWEEN MK I AND MK II MODES
Setting a stack bank selection (SBS) register for the µPD75P0016 enables the program memory to be switched
between the Mk I mode and the Mk II mode. This capability enables the evaluation of the µPD750004, 750006, or 750008
using the µPD75P0016.
When the SBS bit 3 is set to 1: sets Mk I mode (corresponds to Mk I mode of µPD750004, 750006, and 750008)
When the SBS bit 3 is set to 0: sets Mk II mode (corresponds to Mk II mode of µPD750004, 750006, and 750008)
4.1 Differences between Mk I Mode and Mk II Mode
Table 4-1 lists the differences between the Mk I mode and the Mk II mode of the µPD75P0016.
Table 4-1. Differences between Mk I Mode and Mk II Mode
Item
Mk I mode
Mk II mode
Program counter
PC13-0
Program memory (bytes)
16384
Data memory (bits)
512 × 4
Stack
Stack bank
Selectable from memory banks 0 and 1
Stack bytes
2 bytes
3 bytes
Instruction
BRA !addr1
CALLA !addr1
None
Provided
Instruction
CALL !addr
3 machine cycles
4 machine cycles
execution time CALLF !faddr
2 machine cycles
3 machine cycles
Supported mask ROM versions and
mode
Mk I mode of µPD750004, 750006, and
750008
Mk II mode of µPD750004, 750006, and
750008
Caution The Mk II mode supports a program area which exceeds 16K bytes in the 75X and 75XL series. This
mode enhances the software compatibility with products which have more than 16K bytes.
When the Mk II mode is selected, the number of stack bytes used in execution of a subroutine call
instruction increases by 1 per stack for the usable area compared to the Mk I mode. Furthermore, when
a CALL !addr, or CALLF !faddr instruction is used, each instruction takes another machine cycle.
Therefore, when more importance is attached to RAM utilization or throughput than software
compatibility, use the Mk I mode.
12
Data Sheet U10328EJ3V3DS
µPD75P0016
4.2 Setting of Stack Bank Selection (SBS) Register
Use the stack bank selection register to switch between the Mk I mode and the Mk II mode. Figure 4-1 shows the format
for doing this.
The stack bank selection register is set using a 4-bit memory manipulation instruction. When using the Mk I mode,
be sure to initialize the stack bank selection register to 100×B Note at the beginning of the program. When using the Mk
II mode, be sure to initialize it to 000×B Note.
Note Set the desired value for ×.
Figure 4-1. Format of Stack Bank Selection Register
Address
F84H
3
2
1
0
SBS3
SBS2
SBS1
SBS0
Symbol
SBS
Stack area specification
0
0
Memory bank 0
0
1
Memory bank 1
1
0
1
1
0
Setting prohibited
Be sure to set 0 for bit 2.
Mode selection specification
0
Mk II mode
1
Mk I mode
Caution SBS3 is set to “1” after RESET input, and consequently the CPU operates in the Mk I mode. When using
instructions for the Mk II mode, set SBS3 to “0” to enter the Mk II mode before using the instructions.
Data Sheet U10328EJ3V3DS
13
µPD75P0016
5. DIFFERENCES BETWEEN µPD75P0016 AND µPD750004, 750006, AND 750008
The µPD75P0016 replaces the internal mask ROM in the µPD750004, 750006, and 750008 with a one-time PROM
and features expanded ROM capacity. The µPD75P0016’s Mk I mode supports the Mk I mode in the µPD750004, 750006,
and 750008 and the µPD75P0016’s Mk II mode supports the Mk II mode in the µPD750004, 750006, and 750008.
Table 5-2 lists differences among the µPD75P0016 and the µPD750004, 750006, and 750008. Be sure to check the
differences between corresponding versions beforehand, especially when a PROM version is used for debugging or
prototype testing of application systems and later the corresponding mask ROM version is used for full-scale production.
Please refer to the µPD750008 User's Manual (U10740E) for details on CPU functions and on-chip hardware.
Table 5-1. Differences between µPD75P0016 and µPD750004, 750006, and 750008
µPD750004
Item
µPD750006
Program counter
12-bit
13-bit
Program memory (bytes)
Mask ROM
4096
Mask ROM
6144
µPD750008
µPD75P0016
14-bit
Mask ROM
8192
One-time PROM
16384
Data memory (× 4 bits)
512
Mask options
Pull-up resistor for
port 4 and port 5
Yes (On-chip/not on-chip can be specified.)
No (On-chip not
possible)
Wait time when
RESET
Yes (217/fx or 215/fx) Note
No (fixed at 215/fx) Note
Feedback resistor
for subsystem clock
Yes (can select usable or unusable.)
No (usable)
Pins 6-9 (CU)
P33-P30
P33/MD3-P30/MD0
IC
VPP
P53-P50
P53/D7-P50/D4
P43-P40
P43/D3-P40/D0
Pin connection
Pins 23-26 (GB)
Pin 20 (CU)
Pin 38 (GB)
Pins 34-37 (CU)
Pins 8-11 (GB)
Pins 38-41 (CU)
Pins 13-16 (GB)
Other
Noise resistance and noise radiation may differ due to the different circuit complexities and
mask layouts.
Note 217/fx : 21.8 ms @ 6.0 MHz, 31.3 ms @ 4.19 MHz
215/fx : 5.46 ms @ 6.0 MHz, 7.81 ms @ 4.19 MHz
Caution Noise resistance and noise radiation are different in PROM version and mask ROM versions. If using
a mask ROM version instead of the PROM version for processes between prototype development and
full production, be sure to fully evaluate the CS of the mask ROM version (not ES).
14
Data Sheet U10328EJ3V3DS
µPD75P0016
6. MEMORY CONFIGURATION
Figure 6-1. Program Memory Map
0000H
7
6
MBE
RBE
0
Internal reset start address (higher 6 bits)
Internal reset start address (lower 8 bits)
0002H
MBE
RBE
INTBT/INT4 start address (higher 6 bits)
INTBT/INT4 start address (lower 8 bits)
0004H
MBE
RBE
INT0 start address (higher 6 bits)
CALLF
!faddr instruction
entry address
INT0 start address (lower 8 bits)
0006H
MBE
RBE
INT1 start address (higher 6 bits)
INT1 start address (lower 8 bits)
0008H
MBE
RBE
INTCSI start address (higher 6 bits)
BRCB
!caddr instruction
branch address
INTCSI start address (lower 8 bits)
000AH
MBE
RBE
INTT0 start address (higher 6 bits)
INTT0 start address (lower 8 bits)
000CH
MBE
RBE
INTT1 start address (higher 6 bits)
INTT1 start address (lower 8 bits)
Branch address for
the following instructions
• BR BCDE
• BR BCXA
• BR !addr
• CALL !addr
• BRA !addr1Note
• CALLA !addr1 Note
Branch/call
address
by GETI
0020H
Reference table for GETI instruction
007FH
0080H
BR $addr instruction
relative branch address
(–15 to –1,
+2 to +16)
07FFH
0800H
0FFFH
1000H
BRCB
!caddr instruction
branch address
1FFFH
2000H
BRCB
!caddr instruction
branch address
2FFFH
3000H
BRCB
!caddr instruction
branch address
3FFFH
Note Can be used only at Mk II mode.
Remark
For instructions other than those noted above, the “BR PCDE” and “BR PCXA” instructions can be used to
branch to addresses with changes in the PC’s lower 8 bits only.
Data Sheet U10328EJ3V3DS
15
µPD75P0016
Figure 6-2. Data Memory Map
Data memory
General
register
area
Memory bank
000H
(32 × 4)
01FH
020H
Stack area Note
256 × 4
0
(224 × 4)
Data area
static RAM
(512 × 4)
0FFH
100H
256 × 4
1
1FFH
Unimplemented
F80H
128 × 4
Peripheral hardware area
FFFH
Note For the stack area, one memory bank can be selected from memory bank 0 or 1.
16
Data Sheet U10328EJ3V3DS
15
µPD75P0016
7. INSTRUCTION SET
(1) Representation and coding formats for operands
In the instruction’s operand area, use the following coding format to describe operands corresponding to the instruction’s
operand representations (for further description, refer to the RA75X Assembler Package User’s Manual [EEU-1363]).
When there are several codes, select and use just one. Upper-case letters, and + and – symbols are key words that should
be entered as they are.
For immediate data, enter an appropriate numerical value or label.
Instead of mem, fmem, pmem, bit, etc, a register flag symbol can be described as a label descriptor. (For further
description, refer to the µPD750008 User's Manual [U10740E]) Labels that can be entered for fmem and pmem are
restricted.
Representation
Coding format
reg
X, A, B, C, D, E, H, L
reg1
X, B, C, D, E, H, L
rp
XA, BC, DE, HL
rp1
BC, DE, HL
rp2
BC, DE
rp’
XA, BC, DE, HL, XA’, BC’, DE’, HL’
rp’1
BC, DE, HL, XA’, BC’, DE’, HL’
rpa
HL, HL+, HL–, DE, DL
rpa1
DE, DL
n4
4-bit immediate data or label
n8
8-bit immediate data or label
mem
8-bit immediate data or label Note
bit
2-bit immediate data or label
fmem
FB0H-FBFH, FF0H-FFFH immediate data or label
pmem
FC0H-FFFH immediate data or label
addr
0000H-3FFFH immediate data or label
addr1
0000H-3FFFH immediate data or label (in Mk II mode only)
caddr
12-bit immediate data or label
faddr
11-bit immediate data or label
taddr
20H-7FH immediate data (however, bit0 = 0) or label
PORTn
PORT0-PORT8
IEXXX
IEBT, IECSI, IET0, IET1, IE0-IE2, IE4, IEW
RBn
RB0-RB3
MBn
MB0, MB1, MB15
Note When processing 8-bit data, only even addresses can be specified.
Data Sheet U10328EJ3V3DS
17
µPD75P0016
(2) Operation legend
A
: A register; 4-bit accumulator
B
: B register
C
: C register
D
: D register
E
: E register
H
: H register
L
: L register
X
: X register
XA
: Register pair (XA); 8-bit accumulator
BC
: Register pair (BC)
DE
: Register pair (DE)
HL
: Register pair (HL)
XA’
: Expansion register pair (XA’)
BC’
: Expansion register pair (BC’)
DE’
: Expansion register pair (DE’)
HL’
: Expansion register pair (HL’)
PC
: Program counter
SP
: Stack pointer
CY
: Carry flag; bit accumulator
PSW
: Program status word
MBE
: Memory bank enable flag
RBE
: Register bank enable flag
PORTn : Port n (n = 0 to 8)
IME
18
: Interrupt master enable flag
IPS
: Interrupt priority select register
IE×××
: Interrupt enable flag
RBS
: Register bank select register
MBS
: Memory bank select register
PCC
: Processor clock control register
.
: Delimiter for address and bit
(××)
: Contents of address ××
××H
: Hexadecimal data
Data Sheet U10328EJ3V3DS
µPD75P0016
(3) Description of symbols used in addressing area
MB = MBE • MBS
*1
MBS = 0, 1, 15
*2
MB = 0
MBE = 0
: MB = 0 (000H-07FH)
Data memory
addressing
MB = 15 (F80H-FFFH)
*3
MBE = 1
: MB = MBS
MBS = 0, 1, 15
*4
MB = 15, fmem = FB0H-FBFH, FF0H-FFFH
*5
MB = 15, pmem = FC0H-FFFH
*6
addr = 0000H-3FFFH
addr, addr1 = (Current PC) –15 to (Current PC) –1
*7
(Current PC) +2 to (Current PC) +16
caddr = 0000H-0FFFH (PC13, 12 = 00B) or
Program memory
addressing
1000H-1FFFH (PC13, 12 = 01B) or
*8
2000H-2FFFH (PC13, 12 = 10B) or
3000H-3FFFH (PC13, 12 = 11B)
*9
faddr = 0000H-07FFH
*10
taddr = 0020H-007FH
*11
addr1 = 0000H-3FFFH (Mk II mode only)
Remarks 1. MB indicates access-enabled memory banks.
2. In area *2, MB = 0 for both MBE and MBS.
3. In areas *4 and *5, MB = 15 for both MBE and MBS.
4. Areas *6 to *11 indicate corresponding address-enabled areas.
Data Sheet U10328EJ3V3DS
19
µPD75P0016
(4) Description of machine cycles
S indicates the number of machine cycles required for skipping of skip-specified instructions. The value of S varies as
shown below.
• No skip .......................................................................... S = 0
• Skipped instruction is 1-byte or 2-byte instruction ......... S = 1
• Skipped instruction is 3-byte instruction Note ................. S = 2
Note 3-byte instructions: BR !addr, BRA !addr1, CALL !addr, CALLA !addr1
Caution
The GETI instruction is skipped for one machine cycle.
One machine cycle equals one cycle (= tCY) of the CPU clock Φ. Use the PCC setting to select among four cycle times.
20
Data Sheet U10328EJ3V3DS
µPD75P0016
Group
Transfer
Mnemonic
MOV
XCH
Table
reference
MOVT
Operand
No. of Machine
bytes cycle
Operation
Addressing
area
Skip
condition
A, # n4
1
1
A ← n4
reg1, # n4
2
2
reg1 ← n4
XA, # n8
2
2
XA ← n8
String-effect A
HL, # n8
2
2
HL ← n8
String-effect B
rp2, # n8
2
2
rp2 ← n8
A, @HL
1
1
A ← (HL)
A, @HL+
1
2 + S A ← (HL), then L ← L + 1
*1
L=0
A, @HL–
1
2 + S A ← (HL), then L ← L – 1
*1
L = FH
A, @rpa1
1
1
A ← (rpa1)
*2
XA, @HL
2
2
XA ← (HL)
*1
@HL, A
1
1
(HL) ← A
*1
@HL, XA
2
2
(HL) ← XA
*1
A, mem
2
2
A ← (mem)
*3
XA, mem
2
2
XA ← (mem)
*3
String-effect A
*1
mem, A
2
2
(mem) ← A
*3
mem, XA
2
2
(mem) ← XA
*3
A, reg
2
2
A ← reg
XA, rp’
2
2
XA ← rp’
reg1, A
2
2
reg1 ← A
rp’1, XA
2
2
rp’1 ← XA
A, @HL
1
1
A ↔ (HL)
A, @HL+
1
2 + S A ↔ (HL), then L ← L + 1
*1
L=0
A, @HL–
1
2 + S A ↔ (HL), then L ← L – 1
*1
L = FH
A, @rpa1
1
1
A ↔ (rpa1)
*2
XA, @HL
2
2
XA ↔ (HL)
*1
A, mem
2
2
A ↔ (mem)
*3
XA, mem
2
2
XA ↔ (mem)
*3
A, reg1
1
1
A ↔ reg1
XA, rp’
2
2
XA ↔ rp’
XA, @PCDE
1
3
XA ← (PC13-8 + DE)ROM
XA, @PCXA
1
3
XA ← (PC13-8 + XA)ROM
XA, @BCDE
1
3
XA ← (BCDE)ROM Note
*6
3
XA ←
*6
XA, @BCXA
1
(BCXA)ROM Note
*1
Note As for the B register, only the lower 2 bits are valid.
Data Sheet U10328EJ3V3DS
21
µPD75P0016
Group
Bit transfer
Operation
Mnemonic
MOV1
ADDS
ADDC
SUBS
SUBC
AND
OR
XOR
22
Operand
No. of Machine
bytes cycle
Operation
Addressing
area
Skip
condition
CY, fmem.bit
2
2
CY ← (fmem.bit)
*4
CY, [email protected]
2
2
CY ← (pmem7-2 + L3-2.bit(L1-0))
*5
CY, @H + mem.bit
2
2
CY ← (H + mem3-0.bit)
*1
fmem.bit, CY
2
2
(fmem.bit) ← CY
*4
[email protected], CY
2
2
(pmem7-2 + L3-2.bit(L1-0)) ← CY
*5
@H + mem.bit, CY
2
2
(H + mem3-0.bit) ← CY
*1
A, #n4
1
1 + S A ← A + n4
carry
XA, #n8
2
2 + S XA ← XA + n8
carry
A, @HL
1
1 + S A ← A + (HL)
XA, rp’
2
2 + S XA ← XA + rp’
carry
rp’1, XA
2
2 + S rp’1 ← rp’1 + XA
carry
A, @HL
1
1
A, CY ← A + (HL) + CY
XA, rp’
2
2
XA, CY ← XA + rp’ + CY
rp’1, XA
2
2
rp’1, CY ← rp’1 + XA + CY
A, @HL
1
1 + S A ← A – (HL)
XA, rp’
2
2 + S XA ← XA – rp’
borrow
rp’1, XA
2
2 + S rp’1 ← rp’1 – XA
borrow
A, @HL
1
1
A, CY ← A – (HL) – CY
XA, rp’
2
2
XA, CY ← XA – rp’ – CY
rp’1, XA
2
2
rp’1, CY ← rp’1 – XA – CY
A, #n4
2
2
A ← A ^ n4
A, @HL
1
1
A ← A ^ (HL)
XA, rp’
2
2
XA ← XA ^ rp’
rp’1, XA
2
2
rp’1 ← rp’1 ^ XA
A, #n4
2
2
A ← A v n4
A, @HL
1
1
A ← A v (HL)
XA, rp’
2
2
XA ← XA v rp’
rp’1, XA
2
2
rp’1 ← rp’1 v XA
A, #n4
2
2
A ← A v n4
A, @HL
1
1
A ← A v (HL)
XA, rp’
2
2
XA ← XA v rp’
rp’1, XA
2
2
rp’1 ← rp’1 v XA
Data Sheet U10328EJ3V3DS
*1
carry
*1
*1
*1
*1
*1
*1
borrow
µPD75P0016
Group
Mnemonic
Operand
No. of Machine
bytes cycle
Operation
Addressing
area
Skip
condition
Accumulator
RORC
A
1
1
CY ← A0, A3 ← CY, An-1 ← An
manipulate
NOT
A
2
2
A←A
Increment/
INCS
reg
1
1 + S reg ← reg + 1
reg = 0
rp1
1
1 + S rp1 ← rp1 + 1
rp1 = 00H
@HL
2
2 + S (HL) ← (HL) + 1
*1
(HL) = 0
mem
2
2 + S (mem) ← (mem) + 1
*3
(mem) = 0
reg
1
1 + S reg ← reg – 1
reg = FH
rp’
2
2 + S rp’ ← rp’ – 1
rp’ = FFH
reg, #n4
2
2 + S Skip if reg = n4
reg = n4
decrement
DECS
Compare
SKE
@HL, #n4
2
2 + S Skip if (HL) = n4
*1
(HL) = n4
A, @HL
1
1 + S Skip if A = (HL)
*1
A = (HL)
XA, @HL
2
2 + S Skip if XA = (HL)
*1
XA = (HL)
A, reg
2
2 + S Skip if A = reg
A = reg
XA, rp’
2
2 +S
XA = rp’
Skip if XA = rp’
Carry flag
SET1
CY
1
1
CY ← 1
manipulate
CLR1
CY
1
1
CY ← 0
SKT
CY
1
NOT1
CY
1
1 + S Skip if CY = 1
1
CY = 1
CY ← CY
Data Sheet U10328EJ3V3DS
23
µPD75P0016
Group
Memory bit
Mnemonic
SET1
manipulate
CLR1
SKT
SKF
SKTCLR
AND1
OR1
XOR1
24
Operand
No. of Machine
bytes cycle
Operation
Addressing
area
mem.bit
2
2
(mem.bit) ← 1
*3
fmem.bit
2
2
(fmem.bit) ← 1
*4
[email protected]
2
2
(pmem7-2 + L3-2.bit(L1-0)) ← 1
*5
@H + mem.bit
2
2
(H + mem3-0.bit) ← 1
*1
mem.bit
2
2
(mem.bit) ← 0
*3
fmem.bit
2
2
(fmem.bit) ← 0
*4
[email protected]
2
2
(pmem7-2 + L3-2.bit(L1-0)) ← 0
*5
@H + mem.bit
2
2
(H + mem3-0.bit) ← 0
*1
mem.bit
2
2 + S Skip if(mem.bit) = 1
*3
Skip
condition
(mem.bit) = 1
fmem.bit
2
2 + S Skip if(fmem.bit) = 1
*4
(fmem.bit) = 1
[email protected]
2
2 + S Skip if(pmem7-2 + L3-2.bit(L1-0)) = 1
*5
([email protected]) = 1
@H + mem.bit
2
2 + S Skip if(H + mem3-0.bit) = 1
*1
(@H + mem.bit) = 1
mem.bit
2
2 + S Skip if(mem.bit) = 0
*3
(mem.bit) = 0
fmem.bit
2
2 + S Skip if(fmem.bit) = 0
*4
(fmem.bit) = 0
[email protected]
2
2 + S Skip if(pmem7-2 + L3-2.bit(L1-0)) = 0
*5
([email protected]) = 0
@H + mem.bit
2
2 + S Skip if(H + mem3-0.bit) = 0
*1
(@H + mem.bit) = 0
fmem.bit
2
2 + S Skip if(fmem.bit) = 1 and clear
*4
(fmem.bit) = 1
[email protected]
2
2 + S Skip if(pmem7-2 + L3-2.bit (L1-0)) = 1 and clear
*5
([email protected]) = 1
@H + mem.bit
2
2 + S Skip if(H + mem3-0.bit) = 1 and clear
*1
(@H + mem.bit) = 1
CY, fmem.bit
2
2
CY ← CY ^ (fmem.bit)
*4
CY, [email protected]
2
2
CY ← CY ^ (pmem7-2 + L3-2.bit(L1-0))
*5
CY, @H + mem.bit
2
2
CY ← CY ^ (H + mem3-0.bit)
*1
CY, fmem.bit
2
2
CY ← CY v (fmem.bit)
*4
CY, [email protected]
2
2
CY ← CY v (pmem7-2 + L3-2.bit(L1-0))
*5
CY, @H + mem.bit
2
2
CY ← CY v (H + mem3-0.bit)
*1
CY, fmem.bit
2
2
CY ← CY v (fmem.bit)
*4
CY, [email protected]
2
2
CY ← CY v (pmem7-2 + L3-2.bit(L1-0))
*5
CY, @H + mem.bit
2
2
CY ← CY v (H + mem3-0.bit)
*1
Data Sheet U10328EJ3V3DS
µPD75P0016
Group
Branch
Mnemonic
BR Note 1
Operand
No. of Machine
bytes cycle
Operation
Addressing
area
addr
—
—
PC13-0 ← addr
Assembler selects the most
appropriate instruction among
the following:
• BR !addr
• BRCB !caddr
• BR $addr
*6
addr1
—
—
PC13-0 ← addr1
Assembler selects the most
appropriate instruction among
the following:
• BRA !addr1
• BR !addr
• BRCB !caddr
• BR $addr1
*11
!addr
3
3
PC13-0 ← addr
*6
$addr
1
2
PC13-0 ← addr
*7
$addr1
1
2
PC13-0 ← addr1
PCDE
2
3
PC13-0 ← PC13-8 + DE
PCXA
2
3
PC13-0 ← PC13-8 + XA
BCDE
2
3
PC13-0 ← BCDE Note 2
*6
BCXA
2
3
PC13-0 ← BCXA Note 2
*6
BRA Note 1
!addr1
3
3
PC13-0 ← addr1
*11
BRCB
!caddr
2
2
PC13-0 ← PC13, 12 + caddr11-0
*8
Skip
condition
Notes 1. Shaded areas indicate support for the Mk II mode only. Other areas indicate support for the Mk I mode only.
2. As for the B register, only the lower 2 bits are valid.
Data Sheet U10328EJ3V3DS
25
µPD75P0016
Group
Subroutine
Mnemonic
Operand
CALLA Note !addr1
No. of Machine
bytes cycle
3
3
Operation
(SP – 5) ← 0, 0, PC13,12
Addressing
area
Skip
condition
*11
(SP – 6)(SP – 3)(SP – 4) ← PC11-0
stack control
(SP – 2) ← ×, ×, MBE, RBE
PC13–0 ← addr1, SP ← SP – 6
CALL Note
!addr
3
3
(SP – 4)(SP – 1)(SP – 2) ← PC11-0
*6
(SP – 3) ← (MBE, RBE, PC13, 12)
PC13–0 ← addr, SP ← SP – 4
4
(SP – 5) ← 0, 0, PC13,12
(SP – 6)(SP – 3)(SP – 4) ← PC11-0
(SP – 2) ← ×, ×, MBE, RBE
PC13-0 ← addr, SP ← SP – 6
CALLF Note !faddr
2
2
(SP – 4)(SP – 1)(SP – 2) ← PC11-0
*9
(SP – 3) ← (MBE, RBE, PC13, 12)
PC13-0 ← 000 + faddr, SP ← SP – 4
3
(SP – 5) ← 0, 0, PC13,12
(SP – 6)(SP – 3)(SP – 4) ← PC11-0
(SP – 2) ← ×, ×, MBE, RBE
PC13-0 ← 000 + faddr,SP ← SP – 6
RET Note
1
3
(MBE, RBE, PC13, 12) ← (SP + 1)
PC11-0 → (SP)(SP + 3)(SP + 2)
SP ← SP + 4
×, ×, MBE, RBE ← (SP + 4)
0, 0, PC13-12 ← (SP + 1)
PC11-0 ← (SP)(SP + 3)(SP + 2)
SP ← SP + 6
RETS Note
1
3 + S (MBE, RBE, PC13, 12) ← (SP + 1)
Unconditional
PC11-0 ← (SP)(SP + 3)(SP + 2)
SP ← SP + 4
then skip unconditionally
×, ×, MBE, RBE ← (SP + 4)
0, 0, PC13-12 ← (SP + 1)
PC11-0 ← (SP)(SP + 3)(SP + 2)
SP ← SP + 6
then skip unconditionally
RETI Note
1
3
MBE, RBE, PC13, 12 ← (SP + 1)
PC11-0 ← (SP)(SP + 3)(SP + 2)
PSW ← (SP + 4)(SP + 5), SP ← SP + 6
0, 0, PC13, 12 ← (SP + 1)
PC11-0 ← (SP)(SP + 3)(SP + 2)
PSW ← (SP + 4)(SP + 5), SP ← SP + 6
Note Shaded areas indicate support for the Mk II mode only. Other areas indicate support for the Mk I mode only.
26
Data Sheet U10328EJ3V3DS
µPD75P0016
Group
Subroutine
Mnemonic
(SP – 1)(SP – 2) ← rp, SP ← SP – 2
BS
2
2
(SP – 1) ← MBS, (SP – 2) ← RBS, SP ← SP – 2
rp
1
1
rp ← (SP + 1)(SP), SP ← SP + 2
BS
2
2
MBS ← (SP + 1), RBS ← (SP), SP ← SP + 2
2
2
IME(IPS.3) ← 1
2
2
IE××× ← 1
2
2
IME(IPS.3) ← 0
IE×××
2
2
IE××× ← 0
A, PORTn
2
2
A ← PORTn
XA, PORTn
2
2
XA ← PORTn+1, PORTn
(n = 4, 6)
2
2
PORTn ← A
(n = 2 - 8)
2
2
PORTn+1, PORTn ← XA
(n = 4, 6)
HALT
2
2
Set HALT Mode(PCC.2 ← 1)
STOP
2
2
Set STOP Mode(PCC.3 ← 1)
NOP
1
1
No Operation
RBn
2
2
RBS ← n
(n = 0 - 3)
MBn
2
2
MBS ← n
(n = 0, 1, 15)
taddr
1
3
• When using TBR instruction
EI
IE×××
DI
IN Note 1
OUT Note 1 PORTn, A
PORTn, XA
Special
Addressing
area
1
control
CPU control
Operation
1
POP
I/O
No. of Machine
bytes cycle
rp
PUSH
stack control
Interrupt
Operand
SEL
GETI Note 2, 3
PC
← (taddr)
Skip
condition
(n = 0 - 8)
*10
+ (taddr + 1)
13-0
5-0
- - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - -
• When using TCALL instruction
(SP – 4)(SP – 1)(SP – 2) ← PC11-0
(SP – 3) ← MBE, RBE, PC13, 12
PC13-0 ← (taddr)5-0 + (taddr + 1)
SP ← SP – 4
- - - - - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - -
• When using instruction other than
TBR or TCALL
Execute (taddr)(taddr + 1) instructions
1
3
• When using TBR instruction
PC
← (taddr)
Determined by
referenced
instruction
*10
+ (taddr + 1)
13-0
5-0
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
4
• When using TCALL instruction
(SP – 5) ← 0, 0, PC13, 12
(SP – 6)(SP – 3)(SP – 4) ← PC11-0
(SP – 2) ← ×, ×, MBE, RBE
PC13-0 ← (taddr)5-0 + (taddr + 1)
SP ← SP – 6
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
3
• When using instruction other than
TBR or TCALL
Execute (taddr)(taddr + 1) instructions
Determined by
referenced
instruction
Notes 1. Before executing the IN or OUT instruction, set MBE to 0 or 1 and set MBS to 15.
2. TBR and TCALL are assembler directives for the GETI instruction’s table definitions.
3. Shaded areas indicate support for the Mk II mode only. Other areas indicate support for the Mk I mode only.
Data Sheet U10328EJ3V3DS
27
µPD75P0016
8. ONE-TIME PROM (PROGRAM MEMORY) WRITE AND VERIFY
The program memory in the µPD75P0016 is a 16384 × 8-bit electronic write-enabled one-time PROM. The pins listed
in the table below are used for this PROM’s write/verify operations. Clock input from the X1 pins is used instead of address
input as a method for updating addresses.
Pin name
Function
VPP
Pin (usually VDD) where programming voltage is applied during
program memory write/verify
X1, X2
Clock input pin for address updating during program memory
write/verify. Input the X1 pin’s inverted signal to the X2 pin.
MD0/P30-MD3/P33
Operation mode selection pin for program memory write/verify
D0/P40-D3/P43 (lower 4) 8-bit data I/O pin for program memory write/verify
D4/P50-D7/P53 (higher 4)
VDD
Pin where power supply voltage is applied. Power voltage
range for normal operation is 2.2 to 5.5 V. Apply 6.0 V for
program memory write/verify.
Caution Pins not used for program memory write/verify should be processed as follows.
• All unused pins except XT2 ...... Connect to Vss via a pull-down resistor
• XT2 pin ........................................ Leave open
8.1 Operation Modes for Program Memory Write/Verify
When +6 V is applied to the µPD75P0016’s VDD pin and +12.5 V is applied to its VPP pin, program write/verify modes
are in effect. Furthermore, the following detailed operation modes can be specified by setting pins MD0 to MD3 as shown
below.
Operation mode specification
Operation mode
VPP
VDD
MD0
MD1
MD2
MD3
+12.5 V
+6 V
H
L
H
L
Zero-clear program memory address
L
H
H
H
Write mode
L
L
H
H
Verify mode
H
×
H
H
Program inhibit mode
Remark ×: L or H
28
Data Sheet U10328EJ3V3DS
µPD75P0016
8.2 Steps in Program Memory Write Operation
High-speed program memory write can be executed via the following steps.
(1) Pull down unused pins to VSS via resistors. Set the X1 pin to low.
(2) Apply +5 V to the VDD and VPP pins.
(3) Wait 10 µs.
(4) Zero-clear mode for program memory addresses.
(5) Apply +6 V to VDD and +12.5 V power to VPP.
(6) Write data using 1-ms write mode.
(7) Verify mode. If write is verified, go to step (8) and if write is not verified, go back to steps (6) and (7).
(8) X [= number of write operations from steps (6) and (7)] × 1 ms additional write
(9) 4 pulse inputs to the X1 pin updates (increments +1) the program memory address.
(10) Repeat steps (6) to (9) until the last address is completed.
(11) Zero-clear mode for program memory addresses.
(12) Apply +5 V to the VDD and VPP pins.
(13) Power supply OFF
The following diagram illustrates steps (2) to (9).
X repetitions
Write
Verify
Additional
write
Address increment
VPP
VPP
VDD
VDD + 1
VDD
VDD
X1
D0/P40-D3/P43
D4/P50-D7/P53
Data input
Data output
Data input
MD0/P30
MD1/P31
MD2/P32
MD3/P33
Data Sheet U10328EJ3V3DS
29
µPD75P0016
8.3 Steps in Program Memory Read Operation
The µPD75P0016 can read out the program memory contents via the following steps.
(1) Pull down unused pins to VSS via resistors. Set the X1 pin to low.
(2) Apply +5 V to the VDD and VPP pins.
(3) Wait 10 µs.
(4) Zero-clear mode for program memory addresses.
(5) Apply +6 V power to VDD and +12.5 V to VPP.
(6) Verify mode. When a clock pulse is input to the X1 pin, data is output sequentially to one address at a time based
on a cycle of four pulse inputs.
(7) Zero-clear mode for program memory addresses.
(8) Apply +5 V power to the VDD and VPP pins.
(9) Power supply OFF
The following diagram illustrates steps (2) to (7).
VPP
VPP
VDD
VDD + 1
VDD
VDD
X1
D0/P40-D3/P43
D4/P50-D7/P53
Data output
Data output
MD0/P30
MD1/P31
“L”
MD2/P32
MD3/P33
30
Data Sheet U10328EJ3V3DS
µPD75P0016
8.4 One-Time PROM Screening
Due to its structure, the one-time PROM cannot be fully tested before shipment by NEC Electronics. Therefore, NEC
Electronics recommends the screening process, that is, after the required data is written to the PROM and the PROM is
stored under the high- temperature conditions shown below, the PROM should be verified.
Storage temperature
Storage time
125˚C
24 hours
At present, a fee is charged by NEC Electronics for one-time PROM after-programming imprinting, screening, and
verify service for the QTOP Microcontroller. For details, contact an NEC Electronics sales representative.
Data Sheet U10328EJ3V3DS
31
µPD75P0016
9. ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings (TA = 25˚C)
Parameter
Symbol
Conditions
Ratings
Unit
Supply voltage
VDD
–0.3 to + 7.0
V
PROM supply voltage
V PP
–0.3 to + 13.5
V
–0.3 to VDD + 0.3
V
–0.3 to + 14
V
Input voltage
V I1
Other than port 4, 5
V I2
Port 4, 5 (N-ch open drain)
Output voltage
VO
High-level output current
IOH
–0.3 to V DD + 0.3
V
Per pin
–10
mA
Low-level output current
IOL
Total of all pins
–30
mA
Per pin
30
mA
Operating ambient
temperature
TA
220
mA
–40 to + 85
˚C
Storage temperature
Tstg
–65 to + 150
˚C
Total of all pins
Caution If the absolute maximum rating of even one of the parameters is exceeded even momentarily,
the quality of the product may be degraded. The absolute maximum ratings are therefore values
which, when exceeded, can cause the product to be damaged. Be sure that these values are
never exceeded when using the product.
Capacitance (TA = 25˚C, VDD = 0 V)
Parameter
Symbol
Conditions
Input capacitance
CIN
f = 1 MHz
Output capacitance
COUT
Pins other than tested pins: 0 V
I/O capacitance
CIO
32
Data Sheet U10328EJ3V3DS
MIN.
TYP.
MAX.
Unit
15
pF
15
pF
15
pF
µPD75P0016
Main System Clock Oscillation Circuit Characteristics (TA = – 40 to +85˚C)
Resonator
Recommended
constants
Ceramic
resonator
X1
X2
C1
Crystal
resonator
C2
X1
X2
C1
C2
External
clock
X1
Parameter
Conditions
MIN.
TYP.
1.0
MAX.
Unit
6.0 Note 2 MHz
Oscillation frequency
(fX) Note 1
VDD = 2.2 to 5.5 V
Oscillation
stabilization time Note 3
After VDD has
reached MIN. value of
oscillation voltage
range
Oscillation frequency
(fX) Note 1
VDD = 2.2 to 5.5 V
Oscillation
stabilization time Note 3
VDD = 4.5 to 5.5 V
10
ms
VDD = 2.2 to 5.5 V
30
ms
4
1.0
X1 input frequency
(fX) Note 1
VDD = 1.8 to 5.5 V
1.0
X1 input high-,
low-level widths
(tXH, t XL)
VDD = 1.8 to 5.5 V
83.3
ms
6.0 Note 2 MHz
6.0 Note 4 MHz
X2
500
ns
Notes 1. The oscillation frequency and X1 input frequency shown above indicate characteristics of the oscillation
circuit only. For the instruction execution time, refer to AC Characteristics.
2. If the oscillation frequency is 4.7 MHz < fX ≤ 6.0 MHz at 2.2 V ≤ VDD < 2.7 V of the supply voltage, please
do not set processor clock control register (PCC) = 0011. If PCC = 0011, one machine cycle is less than
0.85 µs, falling short of the rated value of 0.85 µs.
3. The oscillation stablilization time is the time required for oscillation to be stabilized after VDD has been
applied or STOP mode has been released.
4. If the X1 input frequency is 4.19 MHz < fx ≤ 6.0 MHz at 1.8 V ≤ VDD < 2.7 V of the supply voltage, please
do not set PCC = 0011. If PCC = 0011, one machine cycle time is less than 0.95 µs, falling short of the
rated value of 0.95 µs.
Caution When using the main system clock oscillation circuit, wire the portion enclosed in the dotted
line in the above figure as follows to prevent adverse influences due to wiring capacitance:
· Keep the wiring length as short as possible.
· Do not cross the wiring with other signal lines.
· Do not route the wiring in the vicinity of a line through which a high alternating current flows.
· Always keep the ground point of the capacitor of the oscillation circuit at the same potential
as V DD.
Do not ground to a power supply pattern through which a high current flows.
· Do not extract signals from the oscillation circuit.
Data Sheet U10328EJ3V3DS
33
µPD75P0016
Subsystem Clock Oscillation Circuit Characteristics (TA = –40 to +85˚C)
Recommended
constants
Resonator
Crystal
resonator
XT1
Parameter
XT2
R
C3
C4
Conditions
Oscillation frequency
(fXT) Note 1
VDD = 2.2 to 5.5 V
Oscillation
stabilization time Note 2
VDD = 4.5 to 5.5 V
MIN.
TYP.
MAX.
Unit
32
32.768
35
kHz
1.0
2
s
10
s
VDD = 2.2 to 5.5 V
External
clock
XT1
XT2
XT1 input frequency
(fXT) Note 1
VDD = 1.8 to 5.5 V
32
100
kHz
XT1 input high-,
low-level widths
(tXTH, tXTL)
VDD = 1.8 to 5.5 V
5
15
µs
Notes 1. The oscillation frequency shown above indicate characteristics of the oscillation circuit only. For the
instruction execution time, refer to AC Characteristics.
2. The oscillation stabilization time is the time required for oscillation to be stabilized after VDD has been
applied.
Caution When using the subsystem clock oscillation circuit, wire the portion enclosed in the dotted line
in the above figure as follows to prevent adverse influences due to wiring capacitance:
· Keep the wiring length as short as possible.
· Do not cross the wiring with other signal lines.
· Do not route the wiring in the vicinity of a line through which a high alternating current flows.
· Always keep the ground point of the capacitor of the oscillation circuit at the same potential
as V DD.
Do not ground to a power supply pattern through which a high current flows.
· Do not extract signals from the oscillation circuit.
The subsystem clock oscillation circuit has a low amplification factor to reduce current
dissipation and is more susceptible to noise than the main system clock oscillation circuit.
Therefore, exercise utmost care in wiring the subsystem clock oscillation circuit.
RECOMMENDED OSCILLATION CIRCUIT CONSTANT
Main System Clock: Ceramic Resonator (TA = –40 to +85˚C)
Manufacturer
TDK Corp.
Part Number
CCR4.0MC32
Frequency
Oscillation Circuit
Constant (pF)
Oscillation Voltage
Range (VDD)
(MHz)
C1
C2
MIN. (V)
MAX. (V)
4.0
10
10
2.3
5.5
Remark
—
Caution The oscillation circuit constants and oscillation voltage range indicate conditions for stable
oscillation but do not guarantee accuracy of the oscillation frequency. If the application circuit
requires accuracy of the oscillation frequency, it is necessary to set the oscillation frequency
of the resonator in the application circuit. For this, it is necessary to directly contact the
manufacturer of the resonator being used.
34
Data Sheet U10328EJ3V3DS
µPD75P0016
DC Characteristics (TA = –40 to + 85˚C, V DD = 2.2 to 5.5 V)
Parameter
Low-level
Symbol
IOL
output current
High-level input
V IH1
Conditions
V IH3
15
mA
mA
Ports 2, 3, 8
Ports 0, 1, 6, 7, RESET
Ports 4, 5 (N-ch open drain)
X1, XT1
Ports 2-5, 8
V IL2
Ports 0, 1, 6, 7, RESET
V IL3
X1, XT1
High-level output
voltage
V OH
SCK, SO, ports 2, 3, 6-8
IOH = –1.0 mA
Low-level output
V OL1
voltage
2.7 ≤ VDD ≤ 5.5 V
0.7 VDD
V DD
V
2.2 ≤ VDD ≤ 2.7 V
0.9 VDD
V DD
V
2.7 ≤ VDD ≤ 5.5 V
0.8 VDD
V DD
V
2.2 ≤ VDD ≤ 2.7 V
0.9 VDD
V DD
V
2.7 ≤ VDD ≤ 5.5 V
0.7 VDD
13
V
2.2 ≤ VDD ≤ 2.7 V
0.9 VDD
13
V
VDD–0.1
V DD
V
2.7 ≤ VDD ≤ 5.5 V
0
0.3 VDD
V
2.2 ≤ VDD ≤ 2.7 V
0
0.1 VDD
V
2.7 ≤ VDD ≤ 5.5 V
0
0.2 VDD
V
0
0.1 VDD
V
0
0.1
V
2.2 ≤ VDD ≤ 2.7 V
V OL2
Unit
150
VIL1
voltage
MAX.
Per pin
V IH4
Low-level input
TYP.
Total of all pins
voltage
V IH2
MIN.
VDD–0.5
SCK, SO,
IOL = 15 mA, VDD = 4.5 to 5.5 V
ports 2-8
IOL = 1.6 mA
SB0, SB1
N-ch open drain
V
0.2
2.0
V
0.4
V
0.2 VDD
V
Pins other than X1 and XT1
3
µA
X1, XT1
20
µA
Pull-up resistor ≥ 1 kΩ
High-level input
ILIH1
leakage current
ILIH2
Low-level input
leakage current
V IN = VDD
ILIH3
V IN = 13 V
Ports 4, 5 (N-ch open drain)
20
µA
ILIL1
V IN = 0 V
Pins other than ports 4, 5, X1 and XT1
–3
µA
ILIL2
X1, XT1
–20
µA
ILIL3
Ports 4, 5 (N-ch open drain) When
input instruction is not executed
–3
µA
–30
µA
Ports 4, 5 (N-ch
open drain)
When input
VDD = 5.0 V
–10
–27
µA
VDD = 3.0 V
–3
–8
µA
instruction is
executed
High-level output
ILOH1
V OUT = VDD
3
µA
leakage current
ILOH2
VOUT = 13 V Ports 4, 5 (N-ch open drain)
20
µA
Low-level output
ILOL
V OUT = 0 V
–3
µA
RL
V IN = 0 V
200
kΩ
SCK, SO/SB0, SB1, Ports 2, 3, 6-8
leakage current
Internal pull-up
Ports 0-3, 6-8 (except P00 pin)
50
100
resistor
Data Sheet U10328EJ3V3DS
35
µPD75P0016
DC Characteristics (TA = –40 to + 85˚C, V DD = 2.2 to 5.5 V)
Parameter
Supply
current Note 1
Symbol
TYP.
MAX.
IDD1
6.0 MHz Note 2
Conditions
V DD = 5.0 V ± 10
% Note 3
3.7
11.0
mA
V DD = 3.0 V ± 10 % Note 4
0.73
2.2
mA
IDD2
crystal oscillation
C1 = C2
= 22 pF
V DD = 5.0 V ± 10 %
0.92
2.6
mA
V DD = 3.0 V ± 10 %
0.3
0.9
mA
HALT
mode
MIN.
Unit
IDD1
4.19 MHz Note 2
V DD = 5.0 V ± 10
% Note 3
2.7
8.0
mA
V DD = 3.0 V ± 10 % Note 4
0.57
1.7
mA
IDD2
crystal oscillation
C1 = C2
= 22 pF
IDD3
32.768
kHz Note 5
crystal oscillation
HALT
mode
IDD5
0.9
2.5
mA
V DD = 3.0 V ± 10 %
0.28
0.8
mA
42
126
µA
23
69
µA
42
84
µA
39
117
µA
V DD = 3.0 V ± 10 %
Lowvoltage
V DD = 2.5 V ± 10 %
mode Note 6
V DD = 3.0 V, TA = 25 ˚C
Low current
dissipation
mode Note 7
IDD4
V DD = 5.0 V ± 10 %
HALT
mode
V DD = 3.0 V ± 10 %
V DD = 3.0 V, TA = 25 ˚C
VDD = 3.0 V ± 10 %
Lowvoltage
VDD = 2.5 V ± 10 %
mode Note 6
39
78
µA
8.5
25
µA
5.0
15
µA
VDD = 3.0 V, T A = 25 ˚C
8.5
17
µA
Low current VDD = 3.0 V ± 10 %
consumption
mode Note 7 VDD = 3.0 V, T A = 25 ˚C
3.5
12
µA
3.5
7
µA
XT1 = 0V Note 8
V DD = 5.0 V ± 10 %
0.05
10
µA
STOP
mode
V DD = 3.0 V ± 10 %
0.02
5
µA
0.02
3
µA
TA = 25 ˚C
Notes 1. The current flowing through the internal pull-up resistor is not included.
2. Including the case when the subsystem clock oscillates.
3. When the device operates in high-speed mode with the processor clock control register (PCC) set to
0011.
4. When the device operates in low-speed mode with PCC set to 0000.
5. When the device operates on the subsystem clock, with the system clock control register (SCC) set to
1001 and oscillation of the main system clock stopped.
6. When the suboscillation circuit control register (SOS) is set to 0000.
7. When SOS is set to 0010.
8. When SOS is set to 00×1, and the suboscillation circuit feedback resistor is not used (×: don’t care).
36
Data Sheet U10328EJ3V3DS
µPD75P0016
AC Characteristics (TA = –40 to + 85˚C, V DD = 2.2 to 5.5 V)
Parameter
CPU clock cycle
Symbol
Operates with
main system
clock
tCY
time Note 1
(minimum instruction
Conditions
with ceramic
oscillator or
crystal resonator
with external
clock
execution time = 1
MIN.
MAX.
Unit
0.67
64
µs
0.85
64
µs
VDD = 2.7 to 5.5 V
0.67
64
µs
VDD = 1.8 to 5.5 V
0.95
64
µs
VDD = 2.7 to 5.5 V
TYP.
125
µs
TI0 input frequency
fTI
V DD = 2.7 to 5.5 V
0
1.0
MHz
0
275
kHz
TI0 high-, low-level
tTIH, tTIL
V DD = 2.7 to 5.5 V
0.48
µs
machine cycle)
Operates with subsystem clock
114
1.8
µs
IM02 = 0
Note 2
µs
IM02 = 1
widths
Interrupt input high-, tINTH,
low-level widths
RESET low-level width
INT0
122
10
µs
INT1, 2, 4
10
µs
KR0-KR7
10
µs
10
µs
tINTL
tRSL
Notes 1. The cycle time of the CPU clock (Φ) is determined by the oscillation frequency of the connected resonator
(and external clock), the system clock control register (SCC), and processor clock control register (PCC).
The figure on the right shows the supply voltage VDD vs. cycle time tCY characteristics when the device
operates with the main system clock.
2. 2t CY or 128/f X depending on the setting of the interrupt mode register (IM0).
tCY vs VDD
(with main system clock)
64
60
6
5
Operation guaranteed range
Cycle time tCY (µ s)
4
3
2
1
0.95
0.85
0.67
0.5
0
Remark
1
1.8 2 2.2 2.7 3
4
5
Supply voltage VDD [V]
5.5 6
Shaded area indicates operation when external clock is used.
Data Sheet U10328EJ3V3DS
37
µPD75P0016
Serial Transfer Operation
2-wire and 3-wire serial I/O modes (SCK ··· internal clock output): (TA = –40 to +85 °C, VDD = 2.2 to 5.5 V)
Parameter
SCK cycle time
SCK high-, low-level widths
Symbol
tKCY1
tKL1,
Conditions
V DD = 2.7 to 5.5 V
V DD = 2.7 to 5.5 V
tKH1
SINote 1
setup time
tSIK1
V DD = 2.7 to 5.5 V
(vs. SCK ↑)
SINote 1 hold time
tKSI1
V DD = 2.7 to 5.5 V
(vs. SCK ↑)
SCK ↓ → SONote 1 output
tKSO1
VDD = 2.7 to 5.5 V
CL = 100 pF
delay time
Notes 1.
RL = 1 kΩNote 2
MIN.
TYP.
MAX.
Unit
1300
ns
3800
ns
tKCY1/2–50
ns
tKCY1/2–150
ns
150
ns
500
ns
400
ns
600
ns
0
250
ns
0
1000
ns
Read as SB0 or SB1 when using the 2-wire serial I/O mode.
2.
R L and CL respectively indicate the load resistance and load capacitance of the SO output line.
2-wire and 3-wire serial I/O modes (SCK ··· external clock input): (TA = –40 to +85°C, VDD = 2.2 to 5.5 V)
Parameter
SCK cycle time
SCK high-, low-level widths
Symbol
tKCY2
tKL2,
Conditions
V DD = 2.7 to 5.5 V
V DD = 2.7 to 5.5 V
tKH2
SINote 1
setup time
tSIK2
V DD = 2.7 to 5.5 V
(vs. SCK ↑)
SINote 1 hold time
tKSI2
V DD = 2.7 to 5.5 V
(vs. SCK ↑)
SCK ↓ → SONote 1 output
delay time
Notes 1.
2.
38
tKSO2
RL = 1 kΩ Note 2
VDD = 2.7 to 5.5 V
CL = 100 pF
MIN.
TYP.
MAX.
Unit
800
ns
3200
ns
400
ns
1600
ns
100
ns
150
ns
400
ns
600
ns
0
300
ns
0
1000
ns
Read as SB0 or SB1 when using the 2-wire serial I/O mode.
R L and CL respectively indicate the load resistance and load capacitance of the SO output line.
Data Sheet U10328EJ3V3DS
µPD75P0016
SBI mode (SCK ··· internal clock output (master)): (TA = –40 to +85°C, VDD = 2.2 to 5.5 V)
Parameter
SCK cycle time
SCK high-, low-level widths
Symbol
tKCY3
tKL3
Conditions
V DD = 2.7 to 5.5 V
V DD = 2.7 to 5.5 V
tKH3
SB0, 1 setup time
tSIK3
V DD = 2.7 to 5.5 V
(vs. SCK ↑)
SB0, 1 hold time (vs. SCK ↑)
tKSI3
SCK ↓ → SB0, 1 output
tKSO3
delay time
MIN.
TYP.
MAX.
1300
ns
3800
ns
tKCY3/2–50
ns
tKCY3/2–150
ns
150
ns
500
ns
tKCY3/2
RL = 1 kΩ Note
VDD = 2.7 to 5.5 V
CL = 100 pF
Unit
ns
0
250
ns
0
1000
ns
SCK ↑ → SB0, 1 ↓
tKSB
tKCY3
ns
SB0, 1 ↓ → SCK ↓
tSBK
tKCY3
ns
SB0, 1 low-level width
tSBL
tKCY3
ns
SB0, 1 high-level width
tSBH
tKCY3
ns
Note RL and CL respectively indicate the load resistance and load capacitance of the SB0 and 1 output lines.
SBI mode (SCK ··· external clock input (slave)): (TA = –40 to +85°C, VDD = 2.2 to 5.5 V)
Parameter
SCK cycle time
SCK high-, low-level widths
Symbol
tKCY4
tKL4
Conditions
V DD = 2.7 to 5.5 V
V DD = 2.7 to 5.5 V
tKH4
SB0, 1 setup time
tSIK4
V DD = 2.7 to 5.5 V
(vs. SCK ↑)
SB0, 1 hold time (vs. SCK ↑)
tKSI4
SCK ↓ → SB0, 1 output
tKSO4
delay time
MIN.
TYP.
MAX.
800
ns
3200
ns
400
ns
1600
ns
100
ns
150
ns
tKCY4/2
RL = 1 kΩ Note
VDD = 2.7 to 5.5 V
CL = 100 pF
Unit
ns
0
300
ns
0
1000
ns
SCK ↑ → SB0, 1 ↓
tKSB
tKCY4
ns
SB0, 1 ↓ → SCK ↓
tSBK
tKCY4
ns
SB0, 1 low-level width
tSBL
tKCY4
ns
SB0, 1 high-level width
tSBH
tKCY4
ns
Note RL and CL respectively indicate the load resistance and load capacitance of the SB0 and 1 output lines.
Data Sheet U10328EJ3V3DS
39
µPD75P0016
AC Timing Test Points (except X1 and XT1 inputs)
VIH (MIN.)
VIH (MIN.)
VIL (MAX.)
VIL (MAX.)
VOH (MIN.)
VOH (MIN.)
VOL (MAX.)
VOL (MAX.)
Clock timing
1/fX
tXL
tXH
VDD – 0.1 V
X1 input
0.1 V
1/fXT
tXTL
tXTH
VDD – 0.1 V
XT1 input
0.1 V
TI0 timing
1/fTI
tTIL
tTIH
TI0
40
Data Sheet U10328EJ3V3DS
µPD75P0016
Serial Transfer Timing
3-wire serial I/O mode
tKCY1, 2
tKL1, 2
tKH1, 2
SCK
tSIK1, 2
tKSI1, 2
Input data
SI
tKSO1, 2
Output data
SO
2-wire serial I/O mode
tKCY1, 2
tKL1, 2
tKH1, 2
SCK
tSIK1, 2
tKSI1, 2
SB0, 1
tKSO1, 2
Data Sheet U10328EJ3V3DS
41
µPD75P0016
Serial Transfer Timing
Bus release signal transfer
tKCY3, 4
tKL3, 4
tKH3, 4
SCK
tKSB
tSBL
tSBH
tSIK3, 4
tSBK
SB0, 1
tKSO3, 4
Command signal transfer
tKCY3, 4
tKL3, 4
tKH3, 4
SCK
tKSB
tSIK3, 4
tSBK
SB0, 1
tKSO3, 4
Interrupt input timing
tINTL
tINTH
INT0, 1, 2, 4
KR0-7
RESET input timing
tRSL
RESET
42
Data Sheet U10328EJ3V3DS
tKSI3, 4
tKSI3, 4
µPD75P0016
Data Retention Characteristics of Data Memory in STOP Mode and at Low Supply Voltage
(TA = –40 to +85˚C)
Parameter
Symbol
Release signal setup time
Conditions
MIN.
tSREL
Oscillation stabilization
TYP.
MAX.
tWAIT
Released by RESET
wait time Note 1
Unit
µs
0
Released by interrupt request
215/f x
ms
Note 2
ms
Notes 1. The oscillation stabilization wait time is the time during which the CPU stops operating to prevent
unstable operation when oscillation is started.
2. Set by the basic interval timer mode register (BTM). (Refer to the table below.)
Wait Time
BTM3
BTM2
BTM1
BTM0
–
0
0
0
220/fx (approx. 250 ms)
220/f x (approx. 175 ms)
–
0
1
1
217/fx (approx. 31.3 ms)
217/f x (approx. 21.8 ms)
–
1
0
1
215/fx (approx. 7.81 ms)
215/f x (approx. 5.46 ms)
1
213/fx
213/f x (approx. 1.37 ms)
fx = 4.19 MHz
–
1
1
fx = 6.0 MHz
(approx. 1.95 ms)
Data retention timing (when STOP mode released by RESET)
Internal reset operation
HALT mode
STOP mode
Operation mode
Data retention mode
VDD
tSREL
STOP instruction execution
RESET
tWAIT
Data retention timing (standby release signal: when STOP mode released by interrupt signal)
HALT mode
STOP mode
Operation mode
Data retention mode
tSREL
VDD
STOP instruction execution
Standby release signal
(interrupt request)
tWAIT
Data Sheet U10328EJ3V3DS
43
µPD75P0016
DC Programming Characteristics (TA = 25 ± 5°C, VDD = 6.0 ± 0.25 V, VPP = 12.5 ± 0.3 V, VSS = 0V)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
V DD
V
VDD – 0.5
V DD
V
0
0.3 VDD
V
0
0.4
V
10
µA
0.4
V
30
mA
30
mA
Input voltage, high
VIH1
Other than X1, X2 pins
0.7 VDD
VIH2
X1, X2
Input voltage, low
VIL1
Other than X1, X2 pins
VIL2
X1, X2
Input leakage current
ILI
V IN = VIL or V IH
Output voltage, high
VOH
IOH = – 1 mA
Output voltage, low
V OL
IOL = 1.6 mA
V DD supply current
IDD
V PP supply current
IPP
TYP.
VDD – 1.0
V
MD0 = VIL, MD1 = VIH
Cautions 1. Keep VPP to within +13.5 V, including overshoot.
2. Apply V DD before VPP and turn it off after V PP.
AC Programming Characteristics (TA = 25 ± 5°C, VDD = 6.0 ± 0.25 V, VPP = 12.5 ± 0.3 V, VSS = 0 V)
Parameter
Symbol
Note 1
tAS
tAS
2
µs
MD1 setup time (vs. MD0 ↓)
tM1S
tOES
2
µs
Data setup time (vs. MD0 ↓)
tDS
tDS
2
µs
tAH
tAH
2
µs
Address setup time
(vs. MD0 ↓)
Address hold time
(vs. MD0 ↑)
Note 2
Note 2
Conditions
MIN.
Data hold time (vs. MD0 ↑)
tDH
tDH
2
MD0 ↑ → data output float
delay time
tDF
tDF
0
V PP setup time (vs. MD3 ↑)
tVPS
tVPS
2
V DD setup time (vs. MD3 ↑)
tVDS
tVCS
2
Initial program pulse width
tPW
tPW
0.95
Additional program pulse width
tOPW
tOPW
0.95
MD0 setup time (vs. MD1 ↑)
tM0S
tCES
2
TYP.
MAX.
Unit
µs
130
ns
µs
µs
1.0
1.05
ms
21.0
ms
µs
µs
MD0 ↓ → data output delay time
tDV
tDV
MD0 = MD1 = VIL
MD1 hold time (vs. MD0 ↑)
tM1H
tOEH
tM1H + tM1R ≥ 50 µs
MD1 recovery time (vs. MD0 ↓)
tM1R
tOR
Program counter reset time
tPCR
—
X1 input high-, low-level width
tXH, t XL
—
0.125
X1 input frequency
fX
—
Initial mode set time
t1
—
2
µs
MD3 setup time (vs. MD1 ↑)
tM3S
—
2
µs
MD3 hold time (vs. MD1 ↓)
tM3H
—
2
µs
MD3 setup time (vs. MD0 ↓)
tM3SR
—
2
µs
1
2
µs
2
µs
10
µs
When program memory is read
→ data output
tDAD
tACC
When program memory is read
Address Note 2 → data output
hold time
tHAD
tOH
When program memory is read
0
MD3 hold time (vs. MD0 ↑)
tM3HR
—
When program memory is read
2
MD3 ↓ → data output float
delay time
tDFR
—
When program memory is read
Note 2
Address
delay time
Notes 1.
2.
MHz
2
µs
130
ns
µs
2
µs
Symbol of corresponding µ PD27C256A
The internal address signal is incremented by one at the rising edge of the fourth X1 input and is not
connected to a pin.
44
µs
4.19
Data Sheet U10328EJ3V3DS
µPD75P0016
Program Memory Write Timing
tVPS
VPP
VPP
VDD
VDD
VDD+1
VDD
tVDS
tXH
X1
tXL
D0/P40-D3/P43
D4/P50-D7/P53
Data input
Data output
Data input
tDS
tI
tDS
tDH
tDV
Data input
tDH
tDF
tAH
tAS
MD0/P30
tPW
tM1R
tM0S
tOPW
MD1/P31
tPCR
tM1S
tM1H
MD2/P32
tM3S
tM3H
MD3/P33
Program Memory Read Timing
tVPS
VPP
VPP
VDD
tVDS
VDD+1
VDD
tXH
VDD
X1
tXL
tDAD
tHAD
D0/P40-D3/P43
D4/P50-D7/P53
Data output
Data output
tDV
tI
tDFR
tM3HR
MD0/P30
MD1/P31
tPCR
MD2/P32
tM3SR
MD3/P33
Data Sheet U10328EJ3V3DS
45
µPD75P0016
10. CHARACTERISTICS CURVES (REFERENCE VALUE)
IDD vs VDD (Main system clock : 6.0 MHz crystal resonator)
(TA = 25°C)
10
5.0
PCC = 0011
PCC = 0010
PCC = 0001
PCC = 0000
Main system clock HALT mode
+32-kHz oscillation
1.0
Supply Current IDD (mA)
0.5
Subsystem clock operation mode
(SOS.1 = 0)
0.1
0.05
Subsystem clock HALT mode
(SOS.1 = 0) and main system
clock STOP mode +32-kHz
oscillation (SOS.1 = 0)
Subsystem clock HALT mode
(SOS.1 = 1) and main system
clock STOP mode +32-kHz
oscillation (SOS.1 = 1)
0.01
0.005
X2 XT1
X1
22 pF
0.001
0
1
2
3
4
Supply Voltage VDD (V)
46
Data Sheet U10328EJ3V3DS
5
XT2
Crystal resonator
Crystal resonator
6.0 MHz
32.768 kHz
22 pF
22 pF
6
330 kΩ
22 pF
7
8
µPD75P0016
IDD vs VDD (Main system clock : 4.19 MHz crystal resonator)
(TA = 25°C)
10
5.0
PCC = 0011
PCC = 0010
PCC = 0001
PCC = 0000
1.0
Main system clock HALT mode
+32-kHz oscillation
Supply Current IDD (mA)
0.5
Subsystem clock operation mode
(SOS.1 = 0)
0.1
0.05
Subsystem clock HALT mode
(SOS.1 = 0) and main system
clock STOP mode +32-kHz
oscillation (SOS.1 = 0)
Subsystem clock HALT mode
(SOS.1 = 1) and main system
clock STOP mode +32-kHz
oscillation (SOS.1 = 1)
0.01
0.005
X1
22 pF
0.001
0
1
2
3
4
5
X2 XT1
XT2
Crystal resonator
Crystal resonator
4.19 MHz
32.768 kHz
330 kΩ
22 pF
22 pF
22 pF
6
7
8
Supply Voltage VDD (V)
Data Sheet U10328EJ3V3DS
47
µPD75P0016
11. PACKAGE DRAWINGS
42PIN PLASTIC SHRINK DIP (600 mil)
42
22
1
21
A
K
H
G
J
I
L
F
B
D
N
R
M
C
M
NOTES
1) Each lead centerline is located within 0.17 mm (0.007 inch) of
its true position (T.P.) at maximum material condition.
2) Item "K" to center of leads when formed parallel.
ITEM
MILLIMETERS
INCHES
A
39.13 MAX.
1.541 MAX.
B
1.78 MAX.
0.070 MAX.
C
1.778 (T.P.)
0.070 (T.P.)
D
0.50±0.10
0.020 +0.004
–0.005
F
0.9 MIN.
0.035 MIN.
G
3.2±0.3
0.126±0.012
H
0.51 MIN.
0.020 MIN.
I
4.31 MAX.
0.170 MAX.
J
5.08 MAX.
0.200 MAX.
K
L
15.24 (T.P.)
0.600 (T.P.)
13.2
0.520
M
0.25 +0.10
–0.05
0.010 +0.004
–0.003
N
0.17
0.007
R
0~15°
0~15°
P42C-70-600A-1
48
Data Sheet U10328EJ3V3DS
µPD75P0016
44 PIN PLASTIC QFP ( 10)
A
B
23
22
33
34
detail of lead end
C
D
S
R
Q
12
11
44
1
F
J
G
H
I
M
K
M
P
N
L
NOTE
ITEM
Each lead centerline is located within 0.16 mm (0.007 inch) of
its true position (T.P.) at maximum material condition.
Data Sheet U10328EJ3V3DS
MILLIMETERS
INCHES
A
13.2±0.2
0.520 +0.008
–0.009
B
10.0±0.2
0.394 +0.008
–0.009
C
10.0±0.2
0.394 +0.008
–0.009
D
13.2±0.2
0.520 +0.008
–0.009
F
1.0
0.039
G
1.0
0.039
H
0.37 +0.08
–0.07
0.015 +0.003
–0.004
I
0.16
0.007
J
0.8 (T.P.)
0.031 (T.P.)
K
1.6±0.2
0.063±0.008
L
0.8±0.2
0.031 +0.009
–0.008
M
0.17 +0.06
–0.05
0.007 +0.002
–0.003
N
0.10
0.004
P
2.7
0.106
Q
0.125±0.075
R
3° +7°
–3°
0.005±0.003
3° +7°
–3°
S
3.0 MAX.
0.119 MAX.
S44GB-80-3BS
49
µPD75P0016
12. RECOMMENDED SOLDERING CONDITIONS
The µPD75P0016 should be soldered and mounted under the following recommended conditions.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Table 12-1. Surface Mounting Type Soldering Conditions
(1) µPD75P0016GB-3BS-MTX: 44-pin plastic QFP (10 × 10 mm, 0.8 mm pitch)
Soldering method
Soldering conditions
Recommended
Condition
Symbol
Infrared reflow
Package peak temperature: 235˚C, Time: 30 seconds max.
(at 210˚C or higher), Count: Three times or less
IR35-00-3
VPS
Package peak temperature: 215˚C, Time: 40 seconds max.
(at 200˚C or higher), Count: Three times or less
VP15-00-3
Wave soldering
Solder bath temperature: 260˚C max., Time: 10 seconds max., Count: Once
WS60-00-1
Preheating temperature: 120˚C max. (package surface temperature)
Partial heating
Pin temperature: 350˚C max., Time: 3 seconds max. (per pin row)
–
Caution Do not use different soldering methods together (except for partial heating).
Remark
For soldering methods and conditions other than those recommended above, contact an NEC Electronics sales
representative.
(2) µPD75P0016GB-3BS-MTX-A: 44-pin plastic QFP (10 × 10 mm, 0.8 mm pitch)
Soldering method
Soldering conditions
Recommended
Condition
Symbol
Infrared reflow
Package peak temperature: 260˚C, Time: 60 seconds max.
(at 220˚C or higher), Count: Three times or less,
Exposure limit: 7 daysNote (after that, prebake at 125˚C for 20 to 72 hours)
IR60-207-3
Wave soldering
For details, contact an NEC Electronics sales representative.
–
Partial heating
Pin temperature: 350˚C max., Time: 3 seconds max. (per pin row)
–
Note After opening the dry pack, store it at 25˚C or less and 65% RH or less for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
Remarks 1. Products with “-A” at the end of the part number are lead-free products.
2. For soldering methods and conditions other than those recommended above, contact an NEC Electronics
sales representative.
50
Data Sheet U10328EJ3V3DS
µPD75P0016
Table 12-2. Insertion Type Soldering Conditions
µPD75P0016CU:
42-pin plastic shrink DIP (600 mil, 1.778 mm pitch)
µPD75P0016CU-A: 42-pin plastic shrink DIP (600 mil, 1.778 mm pitch)
Soldering Method
Soldering Conditions
Wave soldering (pin only)
Solder bath temperature: 260˚C max., Time: 10 seconds max.
Partial heating
Pin temperature: 300˚C max., Time: 3 seconds max. (for each pin)
Caution Apply wave soldering to pins only. See to it that the jet solder does not contact with the chip
directly.
Remarks 1. Products with “-A” at the end of the part number are lead-free products.
2. For soldering methods and conditions other than those recommended above, contact an NEC
Electronics sales representative.
Data Sheet U10328EJ3V3DS
51
µPD75P0016
APPENDIX A. FUNCTION LIST OF µPD75008, 750008, 75P0016
(1/2)
µPD75008
Item
Program memory
µPD750008
µPD75P0016
Mask ROM
0000H - 1F7FH
Mask ROM
0000H - 1FFFH
One-time PROM
0000H - 3FFFH
(8064 × 8 bits)
(8192 × 8 bits)
(16384 × 8 bits)
Data memory
000H - 1FFH
(512 × 4 bits)
CPU
75X Standard CPU
75XL CPU
General register
4 bits × 8 or 8 bits × 4
(4 bits × 8 or 8 bits × 4) × 4 banks
Instruction
execution
time
When main system
clock is selected
• 0.95, 1.91, 15.3 µs
(at 4.19 MHz operation)
• 0.95, 1.91, 3.81, 15.3 µs (at 4.19 MHz operation)
• 0.67, 1.33, 2.67, 10.7 µs (at 6.0 MHz operation)
When subsystem
clock is selected
122 µs (at 32.768 kHz operation)
SBS register
None
Stack
Yes
SBS.3 = 1: Mk I mode selected
SBS.3 = 0: Mk II mode selected
Instructions
Stack area
000H - 0FFH
n00H - nFFH (n = 0, 1)
Stack operation of
subroutine call
instruction
2-byte stack
In Mk I mode: 2-byte stack
In Mk II mode: 3-byte stack
BRA !addr1
CALLA !addr1
Unusable
In Mk I mode: Unusable
In Mk II mode: Usable
MOVT XA, @BCDE
MOVT XA, @BCXA
BR BCDE
BR BCXA
Usable
CALL !addr
3 machine cycles
Mk I mode: 3 machine cycles
Mk II mode: 4 machine cycles
CALLF !faddr
2 machine cycles
Mk I mode: 2 machine cycles
Mk II mode: 3 machine cycles
Timer
3 channels
• Basic interval timer:
1 channel
• 8-bit timer/event counter:
1 channel
• Watch timer: 1 channel
4 channels
• Basic interval timer/watchdog timer: 1 channel
• 8-bit timer/event counter: 1 channel
• 8-bit timer counter: 1 channel
• Watch timer: 1 channel
Clock output (PCL)
• Φ, 524, 262, 65.5 kHz
(main system clock:
• Φ, 524, 262, 65.5 kHz
(main system clock: at 4.19 MHz operation)
at 4.19 MHz operation)
BUZ output (BUZ)
• 2 kHz
• Φ, 750, 375, 93.8 kHz
(main system clock: at 6.0 MHz operation)
• 2, 4, 32 kHz
(main system clock: at 4.19 MHz operation)
• 2.93, 5.86, 46.9 kHz
(main system clock: at 6.0 MHz operation)
52
Data Sheet U10328EJ3V3DS
µPD75P0016
(2/2)
µPD75008
Item
Serial interface
SOS register
µPD750008
µPD75P0016
Compatible with 3 kinds of mode
• 3-wire serial I/O mode ... MSB/LSB-first can be switched
• 2-wire serial I/O mode
• SBI mode
Feedback resistor
cut flag (SOS.0)
On-chip feedback resistor On chip
specifiable by mask option
Sub oscillator current
cut flag (SOS.1)
None
On chip
None
Yes
Standby release by INT0
Not possible
Possible
Vectored interrupt
External: 3 Internal: 3
External: 3 Internal: 4
Processor clock control register
(PCC)
PCC = 0, 2, 3 can be used
PCC = 0 to 3 can be used
Supply voltage
VDD = 2.7 to 6.0 V
VDD = 2.2 to 5.5 V
Operating ambient temperature
TA = –40 to +85˚C
Package
• 42-pin plastic shrink DIP (600 mil, 1.778-mm pitch)
• 44-pin plastic QFP (10 × 10 mm, 0.8-mm pitch)
Register bank selection register
(RBS)
Data Sheet U10328EJ3V3DS
53
µPD75P0016
APPENDIX B. DEVELOPMENT TOOLS
The following development tools are provided for system development using the µPD75P0016. The 75XL series uses
a common relocatable assembler, in combination with a device file matching each machine.
RA75X relocatable assembler
Host machine
Part number
OS
PC-9800 series
TM
MS-DOS
Supply medium
(product name)
3.5" 2HD
µS5A13RA75X
3.5" 2HC
µS7B13RA75X
Ver.3.30 to
Ver.6.2 Note
Device file
IBM PC/ATTM
Refer to OS for
or compatible
IBM PCs
Host machine
Part number
OS
PC-9800 series
MS-DOS
Supply medium
(product name)
3.5" 2HD
µS5A13DF750008
3.5" 2HC
µS7B13DF750008
Ver.3.30 to
Ver.6.2 Note
IBM PC/AT
Refer to OS for
or compatible
IBM PCs
Note Ver. 5.00 and the upper versions of Ver. 5.00 are provided with a task swap function, but it does not work with this
software.
Remark
54
The operation of the assembler and device file is guaranteed only on the above host machines and OSs.
Data Sheet U10328EJ3V3DS
µPD75P0016
PROM Write Tools
Hardware
Software
PG-1500
A stand-alone system can be configured of a single-chip microcomputer with on-chip PROM
when connected to an auxiliary board (companion product) and a programmer adapter
(separately sold). Alternatively, a PROM programmer can be operated on a host machine for
programming.
In addition, typical PROMs in capacities ranging from 256 K to 4 M bits can be programmed.
PA-75P008CU
This is a PROM programmer adapter for the µPD75P0016CU/GB. It can be used when
connected to a PG-1500.
PA-75P0016GB
This is a PROM programmer adapter for the µPD75P0016GB-3BS-MTX. It can be used when
connected to a PG-1500.
PG-1500 controller
Establishes serial and parallel connections between the PG-1500 and a host machine for hostmachine control of the PG-1500.
Host machine
Part number
OS
PC-9800 Series
MS-DOS
Supply medium
(product name)
3.5" 2HD
µS5A13PG1500
3.5" 2HD
µS7B13PG1500
Ver.3.30 to
Ver.6.2 Note
IBM PC/AT
Refer to OS for
or compatible
IBM PCs
Note Ver. 5.00 and the upper versions of Ver. 5.00 are provided with a task swapping function, but it does not work with
this software.
Remark
Operation of the PG-1500 controller is guaranteed only on the above host machine and OSs.
Data Sheet U10328EJ3V3DS
55
µPD75P0016
Debugging Tools
In-circuit emulators (IE-75000-R and IE-75001-R) are provided as program debugging tools for the µPD75P0016.
Various system configurations using these in-circuit emulators are listed below.
Hardware
IE-75000-RNote 1
The IE-75000-R is an in-circuit emulator to be used for hardware and software debugging during
development of application systems that use 75X or 75XL Series products. For development
of the µPD750008 subseries, the IE-75000-R is used with a separately sold emulation board IE75300-R-EM and emulation probe EP-75008CU-R or EP-75008GB-R.
These products can be applied for highly efficient debugging when connected to a host machine
and PROM programmer.
The IE-75000-R can include a connected emulation board (IE-75000-R-EM).
IE-75001-R
The IE-75001-R is an in-circuit emulator to be used for hardware and software debugging during
development of application systems that use 75X or 75XL Series products. The IE-75001-R is
used with a separately sold emulation board (IE-75300-R-EM) and emulation probe EP75008CU-R or EP-75008GB-R.
These products can be applied for highly efficient debugging when connected to a host machine
and PROM programmer.
IE-75300-R-EM
This is an emulation board for evaluating application systems that use the µPD750008
subseries. It is used in combination with the IE-75000-R or IE-75001-R in-circuit emulator.
EP-75008CU-R
This is an emulation probe for the µPD75P0016CU.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
EP-75008GB-R
EV-9200G-44
Software
IE control program
This is an emulation probe for the µPD75P0016GB.
When being used, it is connected with the IE-75000-R or IE-75001-R and the IE-75300-R-EM.
It includes a 44-pin conversion socket (EV-9200G-44) to facilitate connections with various
target systems.
This program can control the IE-75000-R or IE-75001-R on a host machine when connected to
the IE-75000-R or IE-75001-R via an RS-232-C or Centronics I/F.
Host machine
Part number
OS
PC-9800 series
MS-DOS
Supply medium
(product name)
3.5" 2HD
µS5A13IE75X
3.5" 2HC
µS7B13IE75X
Ver.3.30 to
Ver.6.2 Note 2
IBM PC/AT
Refer to OS for
or compatible
IBM PCs
Notes 1. This is a service part provided for maintenance purpose only.
2. Ver. 5.00 and the upper versions of Ver. 5.00 are provided with a task swapping function, but it does not work
with this software.
Remarks 1. Operation of the IE control program is guaranteed only on the above host machine and OSs.
2. The µPD75000 subseries consists of the µPD750004, 750006, 750008 and 75P00016.
56
Data Sheet U10328EJ3V3DS
µPD75P0016
OS for IBM PCs
The following operating systems for the IBM PC are supported.
OS
TM
PC DOS
Version
Ver.3.1 to Ver.6.3
J6.1/VNote to J6.3/VNote
MS-DOS
Ver.5.0 to Ver.6.22
5.0/VNote to J6.2/VNote
IBM DOSTM
J5.02/VNote
Note Supports English version only.
Caution Ver 5.0 and above include a task swapping function, but this software is not able to use that function.
Data Sheet U10328EJ3V3DS
57
µPD75P0016
APPENDIX C. RELATED DOCUMENTS
Some of the following related documents are preliminary. This document, however, is not indicated as
preliminary.
Device Related Documents
Document No.
Document name
Japanese
English
µPD750004, 750006, 750008, 750004(A), 750006(A), 750008(A)
Data Sheet
U10738J
U10738E
µPD75P0016 Data Sheet
U10328J
This document
µPD750008 User’s Manual
U10740J
U10740E
µPD750008, 750108 Instruction List
U11456J
–
75XL Series Selection Guide
U10453J
U10453E
Development Tool Related Documents
Document No.
Document name
IE-75000 R/IE-75001-R User’s Manual
Hardware
Software
Japanese
English
EEU-846
EEU-1416
IE-75300-R-EM User’s Manual
U11354J
U11354E
EP-750008CU-R User’s Manual
EEU-699
EEU-1317
EP-750008GB-R User’s Manual
EEU-698
EEU-1305
PG-1500 User’s Manual
U11940J
U11940E
RA75X Assembler Package
Operation
U12622J
U12622E
User’s Manual
Language
U12385J
U12385E
PG-1500 Controller User’s Manual
PC-9800 Series
(MS-DOS) Base
EEU-704
EEU-1291
IBM PC Series
(PC DOS) Base
EEU-5008
U10540E
Other Documents
Document No.
Document name
Japanese
SEMICONDUCTOR SELECTION GUIDE Products & Package (CD-ROM)
English
X13769X
Semiconductor Device Mounting Technology Manual
C10535J
C10535E
Quality Grades on NEC Semiconductor Devices
C11531J
C11531E
NEC Semiconductor Device Reliability/Quality Control System
C10983J
C10983E
Guide to Prevent Damage for Semiconductor Devices Electrostatic
Discharge (ESD)
C11892J
C11892E
Guide for Products Related to Microcomputer : Other Companies
C11416J
–
Caution The above related documents are subject to change without notice. For design purpose, etc.,
be sure to use the latest documents.
58
Data Sheet U10328EJ3V3DS
µPD75P0016
NOTES FOR CMOS DEVICES
1
VOLTAGE APPLICATION WAVEFORM AT INPUT PIN
Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the
CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may
malfunction. Take care to prevent chattering noise from entering the device when the input level is
fixed, and also in the transition period when the input level passes through the area between VIL (MAX)
and VIH (MIN).
2
HANDLING OF UNUSED INPUT PINS
Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is
possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS
devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or
GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins
must be judged separately for each device and according to related specifications governing the device.
3
PRECAUTION AGAINST ESD
A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as
much as possible, and quickly dissipate it when it has occurred.
Environmental control must be
adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that
easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static
container, static shielding bag or conductive material. All test and measurement tools including work
benches and floors should be grounded.
The operator should be grounded using a wrist strap.
Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for
PW boards with mounted semiconductor devices.
4
STATUS BEFORE INITIALIZATION
Power-on does not necessarily define the initial status of a MOS device. Immediately after the power
source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does
not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the
reset signal is received. A reset operation must be executed immediately after power-on for devices
with reset functions.
5
POWER ON/OFF SEQUENCE
In the case of a device that uses different power supplies for the internal operation and external
interface, as a rule, switch on the external power supply after switching on the internal power supply.
When switching the power supply off, as a rule, switch off the external power supply and then the
internal power supply. Use of the reverse power on/off sequences may result in the application of an
overvoltage to the internal elements of the device, causing malfunction and degradation of internal
elements due to the passage of an abnormal current.
The correct power on/off sequence must be judged separately for each device and according to related
specifications governing the device.
6
INPUT OF SIGNAL DURING POWER OFF STATE
Do not input signals or an I/O pull-up power supply while the device is not powered. The current
injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and
the abnormal current that passes in the device at this time may cause degradation of internal elements.
Input of signals during the power off state must be judged separately for each device and according to
related specifications governing the device.
Data Sheet U10328EJ3V3DS
59
µPD75P0016
Regional Information
Some information contained in this document may vary from country to country. Before using any NEC
Electronics product in your application, pIease contact the NEC Electronics office in your country to
obtain a list of authorized representatives and distributors. They will verify:
•
Device availability
•
Ordering information
•
Product release schedule
•
Availability of related technical literature
•
Development environment specifications (for example, specifications for third-party tools and
components, host computers, power plugs, AC supply voltages, and so forth)
•
Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary
from country to country.
[GLOBAL SUPPORT]
http://www.necel.com/en/support/support.html
NEC Electronics America, Inc. (U.S.)
NEC Electronics (Europe) GmbH
NEC Electronics Hong Kong Ltd.
Santa Clara, California
Tel: 408-588-6000
800-366-9782
Duesseldorf, Germany
Tel: 0211-65030
Hong Kong
Tel: 2886-9318
• Sucursal en España
Madrid, Spain
Tel: 091-504 27 87
• Succursale Française
Vélizy-Villacoublay, France
Tel: 01-30-67 58 00
• Filiale Italiana
Milano, Italy
Tel: 02-66 75 41
• Branch The Netherlands
Eindhoven, The Netherlands
Tel: 040-265 40 10
• Tyskland Filial
NEC Electronics Hong Kong Ltd.
Seoul Branch
Seoul, Korea
Tel: 02-558-3737
NEC Electronics Shanghai Ltd.
Shanghai, P.R. China
Tel: 021-5888-5400
NEC Electronics Taiwan Ltd.
Taipei, Taiwan
Tel: 02-2719-2377
NEC Electronics Singapore Pte. Ltd.
Novena Square, Singapore
Tel: 6253-8311
Taeby, Sweden
Tel: 08-63 87 200
• United Kingdom Branch
Milton Keynes, UK
Tel: 01908-691-133
J05.6
60
Data Sheet U10328EJ3V3DS
µPD75P0016
QTOP is a trademark of NEC Corporation.
MS-DOS is either a registered trademark or a trademark of Microsoft Corporation in the United States
and/or other countries.
IBM DOS, PC/AT, and PC DOS are trademarks of International Business Machines Corporation.
These commodities, technology or software, must be exported in accordance
with the export administration regulations of the exporting country.
Diversion contrary to the law of that country is prohibited.
• The information in this document is current as of August, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1