uPD78P064 DS - Renesas Electronics

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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD78P064
8-BIT SINGLE-CHIP MICROCONTROLLER
DESCRIPTION
The µPD78P064 is a product of µ PD78064 subseries in 78K/0 series, in which the on-chip mask ROM of the µPD78064
is replaced by one-time PROM or EPROM.
As program write by user is possible, the µPD78P064 is best suited for evaluation, short-run and multiple-device
production, and early rise upon system development.
Functions are described in detail in the following User’s Manuals, which should be read when carrying out
design work.
µPD78064, 78064Y Subseries User’s Manual
: U10105E
78K/0 Series User’s Manual Instruction
: U12326E
FEATURES
• Pin compatible with mask ROM products (except the VPP pin)
• Internal PROM: 32K bytesNote
• µPD78P064KL-T
: Reprogrammable (ideal for system evaluation)
• µPD78P064GC, 78P064GF : Programmable once only (ideal for small-scale production)
• Internal high-speed RAM: 1024 bytesNote
• LCD display RAM: 40 × 4 bits
• Operable in the same supply voltage as mask ROM products (VDD = 2.0 to 6.0 V)
• Corresponding to QTOPTM microcontrollers
Note
Internal PROM and internal high-speed RAM capacities can be changed by memory size switching register (IMS).
Remarks 1.
For the differences between PROM products and mask ROM products, refer to 1. DIFFERENCES
BETWEEN µPD78P064 AND MASK ROM PRODUCTS.
2.
A QTOP microcontroller is the general name for a single-chip microcontroller with one-time PROM for
which program writing, marking, screening, and verifying are completely supported by NEC.
In this document, “PROM” is used in parts common to one-time PROM products and EPROM products.
The information in this document is subject to change without notice.
Document No. U12589EJ3V0DS00 (3rd edition)
(Previous No. IC-3224)
Date Published August 1997 N
Printed in Japan
The mark
shows major revised points.
©
1992
1996
µPD78P064
ORDERING INFORMATION
Part Number
Package
100-pin plastic QFP (fine pitch) (14 × 14 mm)
µPD78P064GC-8EU
100-pin plastic LQFP (fine pitch) (14 × 14 mm)
One-time PROM
µPD78P064GF-3BA
100-pin plastic QFP (14 × 20 mm)
One-time PROM
µPD78P064KL-TNote
100-pin ceramic WQFN (14 × 20 mm)
EPROM
Note
One-time PROM
Under development
Caution
The µPD78P064GC has two types of package. (Refer to 10. PACKAGE DRAWINGS). For the package
suppliable to your device, consult NEC sales personnels.
2
On-Chip ROM
µPD78P064GC-7EA
µPD78P064
78K/0 SERIES DEVELOPMENT
The following shows the products organized according to usage. The names in the parallelograms are subseries names.
Products in mass production
Products under development
Y subseries products are compatible with I2C bus.
Control
µ PD78075B
µ PD78078
µ PD78070A
100-pin
100-pin
100-pin
100-pin
80-pin
80-pin
µ PD780058
µ PD78058F
µPD78075BY
µPD78078Y
EMI-noise reduced version of the µ PD78078
µ PD78070AY
ROM-less version of the µPD78078
Serial I/O of the µ PD78078 was enhanced and the function is limited.
µ PD780018AYNote
µ PD780058YNote
A timer was added to the µ PD78054 and external interface was enhanced
Serial I/O of the µ PD78054 was enhanced and EMI-noise was reduced.
µ PD78058FY
EMI-noise reduced version of the µ PD78054
µ PD78054Y
µPD780034Y
µ PD780024Y
UART and D/A converter were enhanced to the µ PD78014 and I/O was enhanced
64-pin
µPD78054
µPD780034
64-pin
64-pin
µ PD780024
µ PD78014H
64-pin
µPD78018F
µPD78014
µ PD780001
µ PD78014Y
An A/D converter and 16-bit timer were added to the µPD78002
An A/D converter was added to the µPD78002
64-pin
µPD78002
µ PD78002Y
Basic subseries for control
42/44-pin
µ PD78083
64-pin
µPD780964
µPD780924
80-pin
64-pin
64-pin
µPD78018FY
A/D converter of the µ PD780024 was enhanced
Serial I/O of the µ PD78018F was added and EMI-noise was reduced.
EMI-noise reduced version of the µ PD78018F
Low-voltage (1.8 V) operation version of the µPD78014, with larger selection of ROM and RAM capacities
On-chip UART, capable of operating at low voltage (1.8 V)
Inverter control
64-pin
A/D converter of the µ PD780924 was enhanced
On-chip inverter control circuit and UART. EMI-noise was reduced.
FIPTM drive
The I/O and FIP C/D of the µ PD78044F were enhanced, Display output total: 53
100-pin
µ PD780208
µ PD780228
80-pin
µ PD78044H
An N-ch open drain I/O was added to the µ PD78044F, Display output total: 34
80-pin
µPD78044F
Basic subseries for driving FIP, Display output total: 34
100-pin
78K/0
Series
The I/O and FIP C/D of the µ PD78044H were enhanced, Display output total: 48
LCD drive
100-pin
µ PD780308
100-pin
µPD78064B
100-pin
µPD78064
µPD780308Y
The SIO of the µPD78064 was enhanced, and ROM, RAM capacity increased
EMI-noise reduced version of the µ PD78064
µ PD78064Y
Basic subseries for driving LCDs, On-chip UART
IEBusTM supported
80-pin
µ PD78098B
EMI-noise reduced version of the µPD78098
80-pin
µ PD78098
An IEBus controller was added to the µPD78054
Meter control
80-pin
µ PD780973
On-chip automobile meter driving controller/driver
LV
64-pin
Note
µ PD78P0914
On-chip PWM output, LV digital code decoder, and Hsync counter
Under planning
3
µPD78P064
The following lists the main functional differences between subseries products.
Function
Subseries Name
Control
ROM
Capacity
µPD78075B
32K-40K
µPD78078
48K-60K
µPD78070A
Timer
8-bit 10-bit 8-bit
8-bit 16-bit Watch WDT A/D A/D D/A
4ch 1ch
1ch 1ch 8ch
–
2ch 3ch (UART: 1ch)
–
µPD780058
24K-60K
µPD78058F
48K-60K
µPD78054
16K-60K
µPD780034
8K-32K
2ch
2ch 3ch (time division UART: 1ch)
3ch (UART: 1ch)
–
8ch
8ch
–
–
µPD78014H
µPD78018F
8K-60K
µPD78014
8K-32K
µPD780001
8K
µPD78002
8K-16K
–
Inverter
control
µPD780964
FIP
drive
µPD780208
32K-60K
2ch 1ch
µPD780228
48K-60K
3ch
µPD78044H
32K-48K
2ch 1ch
µPD78044F
16K-40K
µPD780308
48K-60K
µPD78064B
32K
µPD78064
16K-32K
40K-60K
Meter
control
µPD780973
24K-32K
LV
µPD78P0914 32K
88
1.8 V
61
2.7 V
68
1.8 V
69
2.7 V
External
Expansion
3ch (UART: 1ch,
time division 3-wire: 1ch)
51
1.8 V
2ch
53
1.8 V
–
1ch
1ch
–
–
8ch
–
1ch
39
–
53
–
8ch
8ch
–
1ch 1ch 8ch
–
1ch (UART: 1ch)
33
1.8 V
–
2ch (UART: 2ch)
47
2.7 V
–
2ch
74
2.7 V
1ch
72
4.5 V
68
2.7 V
57
2.0 V
69
2.7 V
–
1ch
–
–
2ch
2ch 1ch
1ch 1ch 8ch
–
–
3ch (time division UART: 1ch)
–
2ch (UART: 1ch)
2ch 1ch
1ch 1ch 8ch
–
2ch 3ch (UART: 1ch)
3ch 1ch
1ch 1ch 5ch
–
–
2ch (UART: 1ch)
56
4.5 V
–
–
2ch
54
4.5 V
32K-60K
Note 10-bit timer: 1 channel
4
3ch Note
–
µPD780924
IEBus
µPD78098
supported µPD78098B
VDD MIN.
Value
2.7 V
µPD78083
8K-32K
I/O
2.0 V
µPD780024
LCD
drive
Serial Interface
6ch
–
–
1ch 8ch
–
µPD78P064
FUNCTION DESCRIPTION
Item
Internal memory
Function
: 32 K bytesNote 1
• PROM
• RAM
High-speed RAM
LCD display RAM
: 1024 bytesNote 1
: 40 × 4 bits
General-purpose register
8 bits × 32 registers (8 bits × 8 registers × 4 banks)
Minimum
instruction
execution
time
When main system
clock is selected
0.4 µs/0.8 µs/1.6 µs/3.2 µs/6.4 µs/12.8 µs (when operating at 5.0 MHz)
When subsystem
clock is selected
122 µs (when operating at 32.768 kHz)
Instruction set
•
•
•
•
I/O ports
Include segment signal
output dual-function pin
Total
• CMOS input
• CMOS input/output
A/D converter
• 8-bit resolution × 8 ch
LCD controller/driver
• Segment signal output
• Common signal output
• Bias
Serial interface
• 3-wire serial I/O/SBI/2-wire serial I/O mode selectable
• 3-wire serial I/O/UART mode selectable
Timer
•
•
•
•
Timer output
3 pins (14-bit PWM output enable : 1 pin)
Clock output
19.5 kHz, 39.1 kHz, 78.1 kHz, 156 kHz, 313 kHz, 625 kHz, 1.25 MHz, 2.5 MHz, 5.0
MHz (when operating at main system clock 5.0 MHz),
32.768 kHz (when operating at subsystem clock 32.768 kHz)
Buzzer output
1.2 kHz, 2.4 kHz, 4.9 kHz, 9.8 kHz (when operating at main system clock 5.0 MHz)
Vectored
interrupt
sources
16-bit operation
Multiplication/division (8 bits × 8 bits, 16 bits ÷ 8 bits)
Bit manipulation (set, reset, test, boolean operation)
BCD correction, etc.
: 57
: 2
: 55
:
:
:
16-bit timer/event counter
8-bit timer/event counter
Watch timer
Watchdog timer
Maskable
Internal : 12, External : 6
Non-maskable
Internal : 1
Software
1
Test input
Internal : 1, External
Supply voltage
VDD = 2.0 to 6.0 V
Package
•
•
•
•
100-pin
100-pin
100-pin
100-pin
40 max.
4 max.
1/2, 1/3, Bias switchable
:
:
:
:
1
2
1
1
: 1 ch
: 1 ch
ch
ch
ch
ch
: 1
plastic (fine pitch) QFP (14 × 14 mm)
plastic LQFP (fine pitch) (14 × 14 mm)
plastic QFP (14 × 20 mm)
ceramic WQFN (14 × 20 mm)Note 2
Notes 1. Internal PROM/internal high-speed RAM capacity can be changed by memory size switching register (IMS).
2. Under development
5
µPD78P064
PIN CONFIGURATION (Top View)
(1) Normal operating mode
• 100-pin plastic QFP (fine pitch) (14 × 14 mm)
µPD78P064GC-7EA
• 100-pin plastic LQFP (fine pitch) (14 × 14 mm)
P11/ANI1
X2
VPP
P72/SCK2/ASCK
P71/SO2/TXD
XT2
XT1/P07
VDD
X1
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
1
75
P12/ANI2
P13/ANI3
P14/ANI4
P15/ANI5
P16/ANI6
P17/ANI7
AVDD
AVREF
P100
2
74
3
73
4
72
5
71
6
70
7
69
8
68
9
67
10
66
P101
VSS
P102
P103
P30/TO0
P31/TO1
P32/TO2
P33/TI1
11
65
12
64
13
63
14
62
15
61
16
60
17
59
18
58
P34/TI2
P35/PCL
P36/BUZ
P37
COM0
COM1
COM2
19
57
20
56
21
55
22
54
23
53
52
51
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Connect VPP pin directly to VSS.
2.
Connect AVDD pin to VDD.
3.
Connect AVSS pin to VSS.
S15
S16
S17
S18
S1
S2
S3
S4
S5
S6
S7
S8
S9
S10
S11
S12
S13
S14
24
COM3
BIAS
VLC0
VLC1
VLC2
VSS
S0
Cautions 1.
6
P112
P111
P110
P05/INTP5
P04/INTP4
P03/INTP3
P02/INTP2
P01/INTP1/TI01
P00/INTP0/TI00
RESET
P10/ANI0
AVSS
P117
P116
P115
P114
P113
µPD78P064GC-8EU
P70/SI2/RXD
P27/SCK0
P26/SO0/SB1
P25/SI0/SB0
P80/S39
P81/S38
P82/S37
P83/S36
P84/S35
P85/S34
P86/S33
P87/S32
P90/S31
P91/S30
P92/S29
P93/S28
P94/S27
P95/S26
P96/S25
P97/S24
S23
S22
S21
S20
S19
µPD78P064
• 100-pin plastic QFP (14 × 20 mm)
µPD78P068GF-3BA
• 100-pin ceramic WQFN (14 × 20 mm)
1
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
P27/SCK0
P70/SI2/RXD
P71/SO2/TXD
P72/SCK2/ASCK
VPP
X2
X1
VDD
XT1/P07
2
79
3
78
4
77
5
76
6
75
7
74
8
73
9
72
10
71
XT2
RESET
P00/INTP0/TI00
P01/INTP1/TI01
P02/INTP2
P03/INTP3
P04/INTP4
P05/INTP5
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
P110
P111
P112
P113
P114
P115
P116
19
62
20
61
21
60
22
59
23
58
24
57
25
56
P117
AVSS
P10/ANI0
P11/ANI1
P12/ANI2
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
S20
S19
S18
S17
S16
S15
S14
S13
S12
S11
S10
S9
S8
S7
S6
S5
S4
S3
S2
S1
S0
VSS
VLC2
VLC1
VLC0
BIAS
COM3
COM2
COM1
COM0
P100
P101
VSS
P102
P103
P30/TO0
P31/TO1
P32/TO2
P33/TI1
P34/TI2
P35/PCL
P36/BUZ
P37
P26/SO0/SB1
P13/ANI3
P14/ANI4
P15/ANI5
P16/ANI6
P17/ANI7
AVDD
AVREF
Note
P86/P33
P87/P32
P90/S31
P91/S30
P92/S29
P93/S28
P94/S27
P95/S26
P96/S25
P97/S24
S23
S22
S21
P25/SI0/SB0
P80/S39
P81/S38
P82/S37
P83/S36
P84/S35
P85/P34
µPD78P064KL-TNote
Under development
Cautions 1.
Connect VPP pin directly to VSS.
2.
Connect AVDD pin to VDD.
3.
Connect AVSS pin to VSS.
7
µPD78P064
8
ANI0-ANI7
: Analog Input
PCL
: Programmable Clock
ASCK
: Asynchronous Serial Clock
RESET
: Reset
AVDD
: Analog Power Supply
RxD
: Receive Data
AVREF
: Analog Reference Voltage
S0-S39
: Segment Output
AVSS
: Analog Ground
SB0, SB1
: Serial Bus
BIAS
: LCD Power Supply Bias Control
SI0, SI2
: Serial Input
BUZ
: Buzzer Clock
SO0, SO2
: Serial Output
COM0-COM3
: Common Output
SCK0, SCK2
: Serial Clock
INTP0-INTP5
: Interrupt from Peripherals
TI00, TI01
: Timer Input
P00-P05, P07
: Port 0
TI1,TI2
: Timer Input
P10-P17
: Port 1
TO0-TO2
: Timer Output
P25-P27
: Port 2
TxD
: Transmit Data
P30-P37
: Port 3
VDD
: Power Supply
P70-P72
: Port 7
VLC0-VLC2
: LCD Power Supply
P80-P87
: Port 8
VSS
: Ground
P90-P97
: Port 9
VPP
: Programming Power Supply
P100-P103
: Port 10
X1, X2
: Crystal (Main System Clock)
P110-P117
: Port 11
XT1, XT2
: Crystal (Subsystem Clock)
µPD78P064
(2) PROM programming mode
• 100-pin plastic QFP (fine pitch) (14 × 14 mm)
µPD78P064GC-7EA
• 100-pin plastic LQFP (fine pitch) (14 × 14 mm)
(L)
Open
VPP
PGM
(L)
A9
RESET
Open
(L)
VDD
(L)
(L)
CE
OE
(L)
µPD78P064GC-8EU
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
1
75
2
74
3
73
4
72
5
71
6
70
7
69
8
68
9
67
10
66
11
65
12
64
13
63
14
62
D0
D1
D2
D3
15
61
16
60
17
59
18
58
D4
D5
D6
D7
19
57
20
56
21
55
22
54
23
53
(L)
VDD
VSS
(L)
VSS
(L)
(L)
(L)
A0
A1
A2
A3
A4
A5
A6
A7
A8
A16
A10
A11
A12
A13
A14
A15
(L)
52
51
25
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
(L)
24
Cautions 1.
(L)
: Individually connect to VSS via a pull-down resistor.
2.
VSS
: Connect to GND.
3.
RESET
: Set to low level.
4.
Open
: No connection
9
µPD78P064
• 100-pin plastic QFP (14 × 20 mm)
µPD78P064GF-3BA
• 100-pin ceramic WQFN (14 × 20 mm)
Note
76
6
75
7
74
8
73
9
72
10
71
11
70
12
69
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
(L)
Under development
Cautions 1.
(L)
: Individually connect to VSS via a pull-down resistor.
2.
VSS
: Connect to GND.
3.
RESET : Set to low level.
4.
Open
10
(L)
77
5
(L)
(L)
78
4
D0
D1
D2
D3
D4
D5
D6
D7
OE
CE
79
3
(L)
(L)
2
VSS
Open
RESET
A9
(L)
PGM
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
(L)
VPP
Open
(L)
VDD
(L)
1
VDD
VSS
(L)
A6
A7
A8
A16
A10
A11
A12
A13
A14
A15
(L)
A0
A1
A2
A3
A4
A5
µPD78P064KL-TNote
: No connection
A0 to A16
: Address Bus
RESET
: Reset
CE
: Chip Enable
VDD
: Power Supply
D0 to D7
: Data Bus
VPP
: Programming Power Supply
OE
: Output Enable
VSS
: Ground
PGM
: Program
µPD78P064
BLOCK DIAGRAM
TO0/P30
TI00/INTP0/P00
TI01/INTP1/P01
P00
16-bit TIMER/
EVENT COUNTER
PORT0
P01-P05
P07
TO1/P31
TI1/P33
TO2/P32
TI2/P34
8-bit TIMER/EVENT
COUNTER 1
8-bit TIMER/EVENT
COUNTER 2
PORT1
P10-P17
PORT2
P25-P27
PORT3
P30-P37
PORT7
P70-P72
PORT8
P80-P87
PORT9
P90-P97
PORT10
P100-P103
PORT11
P110-P117
WATCHDOG TIMER
WATCH TIMER
SI0/SB0/P25
SO0/SB1/P26
SERIAL
INTERFACE 0
78K/0
CPU CORE
PROM
SCK0/P27
SI2/RxD/P70
SO2/TxD/P71
SERIAL
INTERFACE 2
SCK2/ASCK/P72
S0-S23
ANI0/P10ANI7/P17
AVDD
AVSS
AVREF
A/D
CONVERTER
INTP0/P00INTP5/P05
INTERRUPT
CONTROL
BUZ/P36
BUZZER OUTPUT
PCL/P35
CLOCK OUTPUT
CONTROL
RAM
LCD
CONTROLLER/
DRIVER
S24/P97S31/P90
S32/P87S39/P80
COM0-COM3
VLC0-VLC2
BIAS
fLCD
VDD VSS VPP
SYSTEM
CONTROL
RESET
X1
X2
XT1/P07
XT2
11
µPD78P064
CONTENTS
1. DIFFERENCES BETWEEN µPD78P064 AND MASK ROM PRODUCTS .............................................. 13
2. PIN FUNCTION TABLE ............................................................................................................................. 14
2.1
PINS IN NORMAL OPERATING MODE ........................................................................................................... 14
2.2
PINS IN PROM PROGRAMMING MODE ......................................................................................................... 17
2.3
PIN INPUT/OUTPUT CIRCUITS AND RECOMMENDED CONNECTION OF UNUSED PINS ...................... 18
3. MEMORY SIZE SWITCHING REGISTER (IMS) ....................................................................................... 21
4. PROM PROGRAMMING ............................................................................................................................ 22
4.1
OPERATING MODES ......................................................................................................................................... 22
4.2
PROM WRITE PROCEDURE ............................................................................................................................ 24
4.3
PROM READ PROCEDURE .............................................................................................................................. 28
5. ERASURE METHOD (µPD78P064KL-T ONLY) ...................................................................................... 29
6. ERASURE WINDOW SEAL (µPD78P064KL-T ONLY) ........................................................................... 29
7. ONE-TIME PROM PRODUCTS SCREENING .......................................................................................... 30
8. ELECTRICAL SPECIFICATIONS ............................................................................................................ 31
9. CHARACTERISTIC CURVES (REFERENCE VALUES) ......................................................................... 54
10. PACKAGE DRAWINGS ............................................................................................................................. 56
11. RECOMMENDED SOLDERING CONDITIONS ...................................................................................... 60
APPENDIX A. DEVELOPMENT TOOLS........................................................................................................ 61
APPENDIX B. RELATED DOCUMENTS ....................................................................................................... 66
12
µPD78P064
1. DIFFERENCES BETWEEN µPD78P064 AND MASK ROM PRODUCTS
The µPD78P064 is a single-chip microcontroller with an on-chip one-time writable PROM or with an on-chip EPROM
which has program write, erasure, and rewrite capability.
It is possible to make all the functions exception PROM specification, and mask option of LCD drive power supply dividing
resistor, to the same as those of mask ROM products by setting the memory size switching register (IMS).
Difference between the PROM product (µPD78P064) and mask ROM product (µPD78062, 78063, 78064) are shown
is Table 1-1.
Table 1-1. Differences between µPD78P064 and Mask ROM Products
Item
Internal ROM structure
Changing internal ROM/internal high-
µPD78P064
Mask ROM Products
One-time PROM/EPROM
Mask ROM
Can be changedNote
Cannot be changed
speed RAM capacity by memory size
switching register (IMS)
IC pin
No
Yes
VPP pin
Yes
No
Mask option of LCD drive power
supply dividing resistor
No
Yes
Electrical characteristics
Note
Refer to Data Sheet for each product
The internal PROM becomes to 32K bytes and the internal high-speed RAM becomes 1024 bytes by the RESET
input.
Caution
Noise resistance and noise radiation are different in PROM version and mask ROM versions. If using
a mask ROM version instead of the PROM version for processes between prototype development and
full production, be sure to fully evaluate the CS of the mask ROM version (not ES).
13
µPD78P064
2. PIN FUNCTION TABLE
2.1 PINS IN NORMAL OPERATING MODE
(1) PORT PINS (1/2)
Pin Name
Input/Output
P00
Input
P01
Input/output
P02
P03
Function
Port 0
7-bit input/output
port
After Reset
Dual-Function Pin
Input only
Input
INTP0/TI00
Input/output is specifiable
bit-wise.
When used as the input port,
an on-chip pull-up resistor can
be used by software.
Input
INTP1/TI01
INTP2
INTP3
P04
INTP4
P05
INTP5
P07Note 1
Input
P10 to P17
Input/output
P25
Input/output
P26
P27
P30
Input/output
P31
P32
Input
XT1
Port 1
8-bit input/output port
Input/output is specifiable bit-wise.
When used as the input port, an on-chip pull-up resistor
can be used by software.Note 2
Input
ANI0 to ANI7
Port 2
3-bit input/output port
Input/output is specifiable bit-wise.
When used as the input port, an on-chip pull-up resistor
can be used by software.
Input
SI0/SB0
Port 3
8-bit input/output port
Input/output is specifiable bit-wise.
When used as the input port, an on-chip pull-up resistor
can be used by software.
Input
Input only
SO0/SB1
SCK0
TO0
TO1
TO2
P33
TI1
P34
TI2
P35
PCL
P36
BUZ
P37
——
P70
P71
P72
Input/output
Port 7
3-bit input/output port
Input/output is specifiable bit-wise.
When used as the input port, an on-chip pull-up resistor
can be used by software.
Input
SI2/RXD
SO2/TXD
SCK2/ASCK
Notes 1. When P07/XT1 pins are used as the input ports, set processor clock control register (PCC) bit 6 (FRC) to 1.
(Do not use the on-chip feedback resistor of the subsystem clock oscillation circuit.)
2. When P10/ANI0 to P17/ANI7 pins are used as the analog inputs for A/D converter, set port 1 to input mode.
The on-chip pull-up resistor is automatically disabled.
14
µPD78P064
(1) PORT PINS (2/2)
After Reset
Dual-Function Pin
Port 8
8-bit input/output port
Input/output is specifiable bit-wise.
When used as the input port, an on-chip pull-up resistor
can be used by software.
Input/output port/segment signal output function
specifiable in 2-bit units by LCD display control register
(LCDC).
Input
S39 to S32
Input/output
Port 9
8-bit input/output port.
Input/output is specifiable bit-wise.
When used as the input port, an on-chip pull-up resistor
can be used by software.
Input/output port/segment signal output function
specifiable in 2-bit units by LCD display control register.
(LCDC).
Input
S31 to S24
P100 to P103
Input/output
Port 10
4-bit input/output port
Input/output is specifiable in bit-wise.
When used as the input port, an on-chip pull-up resistor
can be used by software.
It is possible to directly drive LED.
Input
P110 to P117
Input/output
Port 11
8-bit input/output port
Input/output is specifiable in bit-wise.
When used as the input port, an on-chip pull-up resistor
can be used by software.
Falling edge detection possible.
Input
Pin Name
Input/Output
P80 to P87
Input/output
P90 to P97
Function
15
µPD78P064
(2) PINS OTHER THAN PORT PINS (1/2)
Pin Name
Input/Output
INTP0
Input
INTP1
Function
External interrupt request input with specifiable Valid
edges (rising edge, falling edge, and both rising and
falling edges).
After Reset Dual-Function Pin
Input
P01/TI01
INTP2
P02
INTP3
P03
INTP4
P04
INTP5
P05
SI0
Input
Serial data input of the serial interface
Input
SI2
SO0
SB0
Output
Serial data output of the serial interface
Input
P26/SBI
P71/TXD
Input/output
Serial data input/output of the serial interface
Input
SB1
SCK0
P25/SB0
P70/RXD
SO2
P25/SI0
P26/SO0
Input/output
Serial clock input/output of the serial interface
Input
P27
P72/ASCK
SCK2
RX D
Input
Serial data input for asynchronouse serial interface
Input
P70/SI2
T XD
Outpu
Serial data output for asynchronous serial interface
Input
P71/SO2
ASCK
Input
Serial clock input for asynchronous serial interface
Input
P72/SCK2
TI00
Input
External count clock input to the 16-bit timer (TM0).
Input
P00/INTP0
TI01
Capture trigger signal input to the capture register
(CR00).
TI1
External count clock input to the 8-bit timer (TM1).
P33
TI2
External count clock input to the 8-bit timer (TM2).
P34
TO0
Output
16-bit timer (TM0) output (dual-function as 14-bit PWM
output)
P01/INTP1
Input
P30
TO1
8-bit timer (TM1) output
P31
TO2
8-bit timer (TM2) output
P32
PCL
Output
Clock output (for trimming main system clock and
subsystem clock)
Input
BUZ
Output
Buzzer output
Input
Output
LCD controller/driver segment signal output
S0 to S23
S32 to S39
COM0 to COM3
VLC0 to VLC2
BIAS
P35
P36
Output
Input
S24 to S31
16
P00/TI00
P97-P90
P87-P80
Output
LCD controller/driver common signal output
LCD drive voltage
LCD drive power supply
Output
µPD78P064
(2) PINS OTHER THAN PORT PINS (2/2)
Pin Name
Input/Output
Function
ANI0 to ANI7
Input
Analog input of A/D converter
AVREF
Input
Reference voltage input of A/D converter
AVDD
Analog power supply of A/D converter
AVSS
Ground potential of A/D converter
RESET
Input
System reset input
X1
Input
Main system clock oscillation crystal connection
Input
Subsystem clock oscillation crystal connection
After Reset
Dual-Function Pin
Input
P10 to P17
Input
P07
X2
XT1
XT2
2.2
VDD
Positive power supply
VPP
High-voltage applied during program write/verification
Connected directly to VSS in normal operating mode
VSS
Ground potential
PINS IN PROM PROGRAMMING MODE
Pin Name
Input/Output
Function
RESET
Input
PROM programming mode setting
When +5 V or +12.5 V is applied to the VPP pin and a low level signal is applied to the
RESET pin, this chip is set in the PROM programming mode.
VPP
Input
PROM programming mode setting and high-voltage applied during program write/
verification
A0 to A16
Input
Address bus
D0 to D7
Input/output
CE
Input
PROM enable input/program pulse input
OE
Input
Read strobe input to PROM
PGM
Input
Program/program inhibit input in PROM programing mode.
Data bus
VDD
Positive power supply
VSS
Ground potential
17
µPD78P064
2.3
PIN INPUT/OUTPUT CIRCUITS AND RECOMMENDED CONNECTION OF UNUSED PINS
Types of input/output circuits of the pins and recommended connection of unused pins are shown in Table 2-1.
For the configuration of each type of input/output circuit, refer to Figure 2-1.
Table 2-1. Type of Input/Output Circuit of Each Pin
Input/Output
Circuit Type
I/O
P00/INTP0/TI00
2
Input
P01/INTP1/TI01
8-A
I/O
P07/XT1
16
Input
P10/ANI0 to P17/ANI7
11
I/O
Pin Name
Recommended Connection
When not Used
Connect to VSS.
Individually connect to VSS via a resistor
P02/INTP2
P03/INTP3
P04/INTP4
P05/INTP5
P25/SI0/SB0
Connect to VDD.
Individually connect to VDD or VSS via a resistor
10-A
P26/SO0/SB1
P27/SCK0
P30/TO0
5-A
P31/TO1
P32/TO2
P33/TI1
8-A
P34/TI2
P35/PCL
5-A
P36/BUZ
P37
P70/SI2/RxD
8-A
P71/SO2/TxD
5-A
P72/SCK2/ASCK
8-A
P80/S39 to P87/S32
17-A
P90/S31 to P97/S24
P100 to P103
5-A
P110 to P117
8-A
S0 to S23
17
COM0 to COM3
18
Individually connect to VDD via resistor
Output
Leave open
VLC0 to VLC2
BIAS
18
RESET
2
XT2
16
Input
Leave open
AVREF
Connect to VSS
AVDD
Connect to VDD.
AVSS
Connect to VSS.
VPP
Connect directly to VSS
µPD78P064
Figure 2-1. List of Pin Input/Output Circuits (1/2)
Type 10-A
Type 2
VDD
pull-up
enable
P-ch
VDD
data
IN
P-ch
IN/OUT
open drain
output disable
N-ch
Schmitt-Triggered Input with Hysteresis Characteristic
Type 11
Type 5-A
VDD
VDD
pull-up
enable
pull-up
enable
P-ch
VDD
P-ch
data
P-ch
VDD
data
IN/OUT
output
disable
P-ch
IN/OUT
output
disable
N-ch
P-ch
Comparator
+
–
N-ch
N-ch
VREF (Threshold voltage)
input
enable
input
enable
Type 16
Type 8-A
VDD
feedback cut-off
pull-up
enable
P-ch
P-ch
VDD
data
P-ch
IN/OUT
output
disable
N-ch
XT1
XT2
19
µPD78P064
Figure 2-1. List of Pin Input/Output Circuits (2/2)
Type 18
Type 17
VLC0
VLC0
P-ch
P-ch
VLC1
VLC1
N-ch
N-ch
P-ch
N-ch
P-ch
SEG
data
OUT
N-ch
P-ch
N-ch
COM
data
VLC2
P-ch
N-ch
VLC2
N-ch
Type 17-A
VDD
pull-up
enable
P-ch
VDD
data
P-ch
IN/OUT
output
disable
N-ch
input
enable
VLC0
P-ch
VLC1
N-ch
P-ch
SEG
data
P-ch
VLC2
N-ch
20
N-ch
P-ch
OUT
µPD78P064
3. MEMORY SIZE SWITCHING REGISTER (IMS)
This is a register to disable use of part of internal memories by software. By setting this memory size switching register
(IMS), it is possible to get the same memory mapping as that of mask ROM product having different internal memories (ROM,
RAM).
The IMS is set up by the 8-bit memory manipulating instruction.
C8H will result by the RESET input.
Figure 3-1. Memory Size Switching Register Format
Symbol
IMS
7
6
5
4
3
2
1
0
Address
After Reset
R/W
RAM2
RAM1
RAM0
0
ROM3
ROM2
ROM1
ROM0
FFF0H
C8H
R/W
ROM3 ROM2 ROM1 ROM0
Selection of Internal
ROM Capacity
0
1
0
0
16K bytes
0
1
1
0
24K bytes
1
0
0
0
32K bytes
Other than above
Setting prohibited
Selection of Internal
RAM2 RAM1 RAM0
High-Speed RAM Capacity
0
1
0
512 bytes
1
1
0
1024 bytes
Other than above
Setting prohibited
Table 3-1 shows the set values of IMS which makes the memory map the same as that of the various mask ROM products.
Table 3-1. Memory Size Switching Register Setting Values
Target Mask ROM Product
IMS Setting Value
µPD78062
44H
µPD78063
C6H
µPD78064
C8H
21
µPD78P064
4. PROM PROGRAMMING
The µPD78P064 has an on-chip 32K-byte PROM as a program memory. For programming, set the PROM programming
mode by the VPP and RESET pins. For processing unused pins, refer to PIN CONFIGURATION (2) PROM programming
mode.
Caution
4.1
When writing in a program, use locations 0000H-7FFFH. (Specify the last address as 7FFFH). You
cannot write in using a PROM programmer that cannot specify the addresses to write.
OPERATING MODES
When +5 V or +12.5 V is applied to the VPP pin and a low level signal is applied to the RESET pin, the PROM programming
mode is set. This mode will become the operating mode as shown in Table 4-1 when the CE, OE and PGM pins are set
as shown.
Further, when the read mode is set, it is possible to read the contents of the PROM.
Table 4-1. Operating Modes of PROM Programming
Pin
RESET
VPP
VDD
CE
OE
PGM
D0 to D7
L
+12.5 V
+6.5 V
H
L
H
Data input
Page write
H
H
L
High-impedance
Byte write
L
H
L
Data input
Program verify
L
L
H
Data output
Program inhibit
×
H
H
High-impedance
×
L
L
L
L
H
Data output
Output disable
L
H
×
High-impedance
Standby
H
×
×
High-impedance
Operating Mode
Page data latch
Read
× : L or H
22
+5 V
+5 V
µPD78P064
(1) Read mode
Read mode is set if CE = L, OE = L is set.
(2) Output disable mode
Data output becomes high-impedance, and is in the output disable mode, of OE = H is set.
Therefore, it allows data to be read from any device by controlling the OE pin, if multiple µPD78P064s are connected
to the data bus.
(3) Standby mode
Standby mode is set if CE = H is set.
In this mode, data outputs become high-impedance irrespective of the OE status.
(4) Page data latch mode
Page data latch mode is set if CE = H, PGM = H, OE = L are set at the beginning of page write mode.
In this mode, 1 page 4-byte data is latched in an internal address/data latch circuit.
(5) Page write mode
After 1 page 4 bytes of addresses and data are latched in the page data latch mode, a page write is executed by applying
a 0.1 ms program pulse (active low) to the PGM pin with CE = H, OE = H. Then, program verification can be performed,
if CE = L, OE = L are set.
If programming is not performed by a one-time program pulse, X (X ≤ 10) write and verification operations should be
executed repeatedly.
(6) Byte write mode
Byte write is executed when a 0.1 ms program pulse (active low) is applied to the PGM pin with CE = L, OE = H. Then,
program verification can be performed if OE = L is set.
If programming is not performed by a one-time program pulse, X (X ≤ 10) write and verification operations should be
executed repeatedly.
(7) Program verify mode
Program verify mode is set if CE = L, PGM = H, OE = L are set. In this mode, check if a write operation is performed
correctly, after the write.
(8) Program inhibit mode
Program inhibit mode is used when the OE pin, VPP pin and D0 to D7 pins of multiple µPD78P064s are connected in
parallel and a write is performed to one of those devices.
When a write operation is performed, the page write mode or byte write mode described above is used. At this time,
a write is not performed to a device which has the PGM pin driven high.
23
µPD78P064
4.2
PROM WRITE PROCEDURE
Figure 4-1. Page Program Mode Flow Chart
Start
Address = G
VDD = 6.5 V, VPP = 12.5 V
X=0
Latch
Address = address + 1
Latch
Address = address + 1
Latch
Address = address + 1
Address = address + 1
Latch
No
X=X+1
X = 10 ?
0.1 ms program pulse
Verify 4 bytes
Yes
Fail
Pass
No
Address = N ?
Yes
VDD = 4.5 to 5.5 V, VPP = VDD
Pass
Verify all bytes
Fail
All Pass
Write end
G = Start address
N = Program last address
24
Faulty product
µPD78P064
Figure 4-2. Page Program Mode Timing
Page Data Latch
Page Program
Program Verify
A2 to A16
A0, A1
D0 to D7
Data Input
Data Output
VPP
VPP
VDD
VDD + 1.5
VDD
VDD
VIH
CE
VIL
VIH
PGM
VIL
VIH
OE
VIL
25
µPD78P064
Figure 4-3. Byte Program Mode Flow Chart
Start
Address = G
VDD = 6.5 V, VPP = 12.5 V
X=0
X=X+1
No
X = 10 ?
0.1 ms Program pulse
Yes
Address = address + 1
Fail
Verify
Pass
No
Address = N ?
Yes
VDD = 4.5 to 5.5 V, VPP = VDD
Pass
Verify all bytes
Fail
All Pass
Write end
G = Start address
N = Program last address
26
Faulty product
µPD78P064
Figure 4-4. Byte Program Mode Timing
Program
Program Verify
A0 to A16
D0 to D7
Data Input
Data Output
VPP
VPP
VDD
VDD + 1.5
VDD
VDD
VIH
CE
VIL
VIH
PGM
VIL
VIH
OE
VIL
Cautions 1.
VDD should be applied before VPP and cut after VPP.
2.
VPP must not exceed +13.5 V including overshoot.
3.
Reliability may be adversely affected of removal/reinsertion is performed while +12.5 V is being
applied to VPP.
27
µPD78P064
4.3
PROM READ PROCEDURE
The contents of PROM are readable to the external data bus (D0 to D7) according to the read procedure shown below.
(1) Fix the RESET pin at low level, supply +5 V to the VPP pin, and process all other unused pins as shown in Pin
Configuration (2) PROM programming mode.
(2) Supply +5 V to the VDD and VPP pins.
(3) Input address of read data into the A0 to A16 pins.
(4) Read mode
(5) Output data to D0 to D7 pins.
The timings of the above steps (2) to (5) are shown in Figure 4-5.
Figure 4-5. PROM Read Timings
Address Input
A0 to A16
CE (Input)
OE (Input)
D0 to D7
28
Hi-Z
Data Output
Hi-Z
µPD78P064
5. ERASURE METHOD (µPD78064KL-T ONLY)
The µPD78P064KL-T is capable of erasing (FFH) the contents of data written in a program memory and rewriting.
When erasing the contents of data, irradiate light having a wavelength of less than about 400 nm to the erasing window.
Normally, irradiate ultraviolet rays of 254 nm wavelength. Volume of irradiation required to completely erase the contents
of data is as follows:
• UV intensity × erasing time : 30 W•s/cm2 or more
• Erasing time
: 40 minutes MIN. (When a UV lamp of 12 mW/cm2 is used. However, a longer time
may be needed because of deterioration in performance of the UV lamp, contamination
of the erasing window, etc.)
When erasing the contents of data, set up the UV lamp within 2.5 cm from the erasing window. Further, if a filter is provided
for a UV lamp, irradiate the ultraviolet rays after removing the filter.
6. ERASURE WINDOW SEAL (µPD78P064KL-T ONLY)
To protect from miserasure by rays other than that of the lamp for erasing EPROM contents, or to protect internal circuit
other than EPROM from misoperating by rays, stick a protection seal on the erasure window when EPROM contents erasure
is not performed.
29
µPD78P064
7. ONE-TIME PROM PRODUCTS SCREENING
The one-time PROM product (µPD78P064GC-7EA, µPD78P064GC-8EU, µPD78P064GF-3BA) can not be tested
completely by NEC before it is shipped, because of its structure. It is recommended to perform screening to verify PROM
after writing necessary data and performing high-temperature storage under the condition below.
Storage Temperature
Storage Time
125 °C
24 hours
At present, a fee is charged by NEC for one-time PROM after-programming writing, marking, screening, and verify service
for the QTOP Microcontroller. For details, contact your sales representative.
30
µPD78P064
8. ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Supply voltage
Rating
Unit
VDD
–0.3 to +7.0
V
VPP
–0.3 to +13.5
V
AVDD
–0.3 to VDD +0.3
V
AVREF
–0.3 to VDD +0.3
V
–0.3 to +0.3
V
–0.3 to VDD +0.3
V
–0.3 to +13.5
V
–0.3 to VDD +0.3
V
AVSS –0.3 to AVREF +0.3
V
–10
mA
–15
mA
30
15
100
70
100
70
50
20
mA
mA
mA
mA
mA
mA
mA
mA
Symbol
Test Conditions
AVSS
VI
P00-P05, P07, P10-P17, P25-P27,
P30-P37, P70-P72, P80-P87, P90-P97,
P100-P103, P110-P117
VI2
A9 (PROM programming mode)
Input voltage
Output voltage
VO
Analog input voltage
VAN
P10-P17
Analog input pin
1 pin
Output current, high
Total for P01-P05, P10-P17, P25-P27, P30-P37,
P70-P72, P80-P87, P90-P97, P100-P103,
P110-P117
IOH
1 pin
Output current, low
Note
IOL
Total for P01-P05, P10-P17,
P100, P101, P110-P117
Total for P30-P37, P102, P103
Total for P25-P27, P70-P72,
P80-P87, P90-P97
Peak value
r.m.s. value
Peak value
r.m.s. value
Peak value
r.m.s. value
Peak value
r.m.s. value
Operating ambient temperature
TA
–40 to +85
°C
Storage temperature
Tstg
–65 to +150
°C
Note
The r.m.s. value should be calculated as follows: [r.m.s. value] = [Peak value] × √Duty
Caution
The product quality may be damaged even if a value of only one of the above parameters exceeds the
absolute maximum rating or any value exceeds the absolute maximum rating for an instant. That is, the
absolute maximum rating is a rating value which may cause a product to be damaged physically. The
absolute maximum rating values must therefore be observed in using the product.
Remark Unless specified otherwise, the characteristics of dual-function pins are the same as the those of port pins.
CAPACITANCE (TA= 25 °C, VDD = VSS = 0 V)
Parameter
Input capacitance
Symbol
Test Conditions
CIN
Output capacitance
COUT
I/O capacitance
CIO
f = 1 MHz unmeasured
pins returned to 0 V.
MIN.
TYP.
MAX.
Unit
15
pF
15
pF
15
pF
31
µPD78P064
MAIN SYSTEM CLOCK OSCILLATION CIRCUIT CHARACTERISTICS (TA = –40 to +85 °C, VDD = 2.0 to 6.0 V)
Resonator
Ceramic
resonator
Recommended
circuit
X1
VPP X2
C2
Crystal
resonator
C1
X1
VPP X2
C2
C1
External clock
X2
µPD74HCU04
X1
Test conditions
Parameter
Oscillator
frequency (fX)Note 1
V DD = Oscillator
voltage range
Oscillation
stabilization timeNote 2
After VDD reaches oscillator voltage range MIN.
Oscillator
frequency (fX)Note 1
Oscillation
stabilization timeNote 2
MIN.
TYP.
1
1
MAX.
Unit
5
MHz
4
ms
5
MHz
10
V DD = 4.5 to 6.0 V
ms
30
X1 input
frequency (fX)Note 1
1.0
5.0
MHz
X1 input
high/low level width
(tXH , tXL)
85
500
ns
Notes 1. Indicates only oscillation circuit characteristics. Refer to AC Characteristics for instruction execution time.
2. Time required to stabilize oscillation after reset or STOP mode release.
Cautions 1.
When using the main system clock oscillator, wiring in the area enclosed with the broken line should
be carried out as follows to avoid an adverse effect from wiring capacitance.
• Wiring should be as short as possible.
• Wiring should not cross other signal lines.
• Wiring should not be placed close to a varying high current.
• The potential of the oscillator capacitor ground should be the same as VSS.
• Do not ground it to the ground pattern in which a high current flows.
• Do not fetch a signal from the oscillator.
2.
If the main system clock oscillation circuit is operated by the subsystem clock when the main
system clock is stopped, reswitching to the main system clock should be performed after the stable
oscillation time has been obtained by the program.
32
µPD78P064
SUBSYSTEM CLOCK OSCILLATOR CHARACTERISTICS (TA = –40 to +85°C, VDD = 2.0 to 6.0 V)
Resonator
Recommended Circuit
VPP XT1
XT2
R1
Parameter
Test Conditions
Oscillator frequency
(fXT)Note 1
MIN.
TYP.
MAX.
Unit
32
32.768
35
kHz
1.2
2
s
Crystal resonator
C3
C4
Oscillation stabilization
timeNote 2
VDD = 4.5 to 6.0 V
10
XT1
XT2
XT1 input frequency
(fXT)Note 1
32
100
kHz
XT1 input high-/low-level
width (tXTH/tXTL)
5
15
µs
External clock
Notes 1. Indicates only oscillation circuit characteristics. Refer to AC Characteristics for instruction execution time.
2. Time required to stabilize oscillation after VDD has reached the minimum oscillation voltage range.
Cautions 1.
When using the subsystem clock oscillator, wiring in the area enclosed with the broken line should
be carried out as follows to avoid an adverse effect from wiring capacitance.
• Wiring should be as short as possible.
• Wiring should not cross other signal lines.
• Wiring should not be placed close to a varying high current.
• The potential of the oscillator capacitor ground should be the same as VSS.
• Do not ground it to the ground pattern in which a high current flows.
• Do not fetch a signal from the oscillator.
2.
The subsystem clock oscillation circuit is designed as a low amplification circuit to provide low
consumption current, causing misoperation to noise more frequently than the main system clock
oscillation circuit. Special care should therefore be taken to wiring method when the subsystem
clock is used.
33
µPD78P064
RECOMMENDED OSCILLATION CIRCUIT CONSTANT
MAIN SYSTEM CLOCK: CERAMIC RESONATOR (TA = –40 to +85 °C)
Manufacturer
Murata Mfg.
Co., Ltd.
Matsushita
Electronics
Components
Co., Ltd.
Kyocera Corp.
Caution
Product Name
Frequency
(MHZ)
Recommended
Circuit Constant
Oscillator
Voltage Range
C1 (pF)
C2 (pF)
MIN. (V)
MAX. (V)
Remarks
CSA5.00MG
5.00
30
30
2.7
6.0
CST5.00MGW
5.00
Built-in
Built-in
2.7
6.0
EF0GC5004A4
5.00
Built-in
Built-in
2.7
6.0
Lead type
EF0EC5004A4
5.00
Built-in
Built-in
2.7
6.0
Round lead type
EF0EN5004A4
5.00
33
33
2.7
6.0
Lead type
EF0S5004B5
5.00
Built-in
Built-in
2.7
6.0
Chip type
KBR-5.0MSA
5.00
33
33
2.7
6.0
Lead type
PBRC5.00A
5.00
33
33
2.7
6.0
Chip type
KBR-5.0MKS
5.00
Built-in
Built-in
2.7
6.0
Lead type
KBR-5.0MWS
5.00
Built-in
Built-in
2.7
6.0
Chip type
The oscillation circuit constants and oscillation voltage range indicate conditions for stable oscillation
but do not guarantee accuracy of the oscillation frequency. If the application circuit requires accuracy
of the oscillation frequency, it is necessary to set the oscillation frequency in the application circuit.
For this, it is necessary to directly contact the manufacturer of the resonator being used.
34
µPD78P064
DC CHARACTERISTICS (TA = –40 to +85°C, VDD = 2.0 to 6.0 V)
Parameter
Symbol
Test Conditions
MAX.
Unit
0.7 VDD
VDD
V
0.8 VDD
VDD
V
0.8 VDD
VDD
V
0.85 VDD
VDD
V
VDD–0.5
VDD
V
VDD–0.2
VDD
V
4.5 ≤ VDD ≤ 6.0 V
0.8 VDD
VDD
V
2.7 ≤ VDD < 4.5 V
0.9 VDD
VDD
V
0.9 VDD
VDD
V
0
0.3 VDD
V
0
0.2 VDD
V
0
0.2 VDD
V
0
0.15 VDD
V
0
0.4
V
0
0.2
V
4.5 ≤ VDD ≤ 6.0 V
0
0.2 VDD
V
2.7 ≤ VDD < 4.5 V
0
0.1 VDD
V
2.0 ≤ VDD < 2.7 VNote
0
0.1 VDD
V
VDD = 4.5 to 6.0 V IOH = –1 mA
VDD–1.0
VDD
V
IOH = –100 µA
VDD–0.5
VDD
V
2.0
V
0.4
V
0.2 VDD
V
0.5
V
P10-P17, P30-P32,
VIH1
VDD = 2.7 to 6.0 V
Input voltage,
high
VDD = 2.7 to 6.0 V
P33, P34, P70-P72,
P110-P117, RESET
VDD = 2.7 to 6.0 V
VIH3
VIH4
X1, X2
XT1/P07, XT2
2.0 ≤ VDD < 2.7
P10-P17, P30-P32,
VIL1
VNote
VDD = 2.7 to 6.0 V
P35-P37, P80-P87,
P90-P97, P100-P103
P00-P05, P25-P27,
VIL2
Input voltage,
low
VIL4
Output voltage,
high
X1, X2
XT1/P07, XT2
VOH
VOL1
Output voltage,
low
Note
VDD = 2.7 to 6.0 V
P33, P34, P70-P72,
P110-P117, RESET
VDD = 2.7 to 6.0 V
VIL3
TYP.
P35-P37, P80-P87,
P90-P97, P100-P103
P00-P05, P25-P27,
VIH2
MIN.
P100-P103
VDD = 4.5 to 6.0 V,
IOL = 15 mA
P01-P05,
P25-P27,
P70-P72,
P90-P97,
VDD = 4.5 to 6.0 V,
IOL = 1.6 mA
P10-P17,
P30-P37,
P80-P87,
P110-P117
VOL2
SB0, SB1, SCK0
VOL3
IOL = 400 µA
VDD = 4.5 to 6.0 V,
open-drain,
pulled up (R = 1 kΩ)
0.4
When P07/XT1 pin is used as P07, the inverse phase of P07 should be input to XT2 using an inverter.
Remark
Unless specified otherwise, the characteristics of dual-function pins are the same as the those of port pins.
35
µPD78P064
DC CHARACTERISTICS (TA = –40 to +85 °C, VDD = 2.0 to 6.0 V)
Parameter
Symbol
Input leakage
current, high
ILIH1
Test Conditions
VIN = VDD
ILIH2
Input leakage
current, low
ILIL1
VIN = 0 V
ILIH2
Output leakage
current, high
Output leakage
current, low
MAX.
Unit
P00-P05, P10-P17, P25-P27,
P30-P37, P70-P72, P80-P87,
P90-P97, P100-P103,
P110-P117
3
µA
X1, X2, XT1/P07, XT2
20
µA
P00-P05, P10-P17, P25-P27,
P30-P37, P70-P72, P80-P87,
P90-P97, P100-P103,
P110-P117
–3
µA
X1, X2, XT1/P07, XT2
–20
µA
VOUT = VDD
3
µA
ILOL
VOUT = 0 V
–3
µA
90
kΩ
500
kΩ
15.0
2.1
1.2
27.0
3.0
4.2
1500
840
4.8
1950
270
190
140
55
15
12.5
30
10
10
30
10
10
mA
mA
mA
mA
mA
mA
µA
µA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
R
IDD1
IDD2
Supply
currentNote 1
TYP.
ILOH
VIN = 0 V, P01-P05, P10-P17,
Software
pull-up resistor
MIN.
IDD3
IDD4
IDD5
IDD6
P25-P27, P30-P37, P70-P72,
P80-P87, P90-P97,
P100-P103, P110-P117
4.5 V ≤ VDD ≤ 6.0 V
15
2.7 V ≤ VDD < 4.5 V
20
VDD
VDD
VDD
5.00 MHz, Crystal oscillation (fXX VDD
= 5.0 MHz)Note 3 operating mode VDD
VDD
5.00 MHz, Crystal oscillation
VDD
(fXX = 2.5 MHz)Note 2
VDD
HALT mode
5.00 MHz, Crystal oscillation (fXX VDD
= 5.0 MHz)Note 3 HALT mode
VDD
VDD
32.768 kHz, Crystal oscillation
VDD
operating modeNote 4
VDD
VDD
32.768 kHz, Crystal oscillation
VDD
Note
4
HALT mode
VDD
VDD
XT1 = VDD
STOP mode
VDD
When feedback resistor is connected VDD
VDD
XT1 = VDD
STOP mode
VDD
When feedback resistor is disconnected VDD
5.00 MHz, Crystal oscillation
(fXX = 2.5 MHz)Note 2
operating mode
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
5.0
3.0
2.2
5.0
3.0
5.0
3.0
2.2
5.0
3.0
5.0
3.0
2.2
5.0
3.0
2.2
5.0
3.0
2.2
5.0
3.0
2.2
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
±
±
±
±
±
±
±
±
±
±
±
±
±
±
±
±
±
±
±
±
±
±
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
%Note 5
%Note 6
%Note 6
%Note 5
%Note 6
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
%
40
5.0
0.7
0.4
9.0
1.0
1.4
500
280
1.6
650
135
95
70
25
5
2.5
1
0.5
0.3
0.1
0.05
0.05
Notes 1. Current flowing VDD pin. Not including on-chip pull-up resistors or LCD dividing resistors.
2. Main system clock fXX = fX/2 operation (when oscillation mode selection register (OSMS) is set to 00H)
3. Main system clock fXX = fX operation (when OSMS is set to 01H)
4. When the main system clock is stopped.
5. High-speed mode operation (when processor clock control register (PCC) is set to 00H)
6. Low-speed mode operation (when PCC is set to 04H)
Remark Unless specified otherwise, the characteristics of dual-function pins are the same as the those of port pins.
36
µPD78P064
DC CHARACTERISTICS (TA = –10 to +85 °C)
(1) Static Display Mode (VDD = 2.0 to 6.0 V)
Parameter
LCD drive voltage
LCD dividing resistor
LCD output voltage
deviationNote (common)
LCD output voltage
deviationNote (segment)
Note
Symbol
Test Conditions
VLCD
RLCD
VODC
IO = ±5 µA
VODS
IO = ±1 µA
2.0 V ≤ VLCD ≤ VDD
VLCD0 = VLCD
MIN.
TYP.
MAX.
Unit
2.0
60
100
VDD
150
V
kΩ
0
±0.2
V
0
±0.2
V
The voltage deviation is the difference from the out voltage corresponding to the ideal value of the segment and
common outputs (VLCDn; n = 0, 1, 2).
(2) 1/3 Bias Method (VDD = 2.5 to 6.0 V)
Parameter
LCD drive voltage
LCD dividing resistor
LCD output voltage
deviationNote (common)
LCD output voltage
deviationNote (segment)
Note
Symbol
Test Conditions
VLCD
RLCD
VODC
IO = ±5 µA
VODS
IO = ±1 µA
2.5 V ≤ VLCD ≤ VDD
VLCD0 = VLCD
2
VLCD1 = VLCD × 3
1
VLCD2 = VLCD × 3
MIN.
TYP.
MAX.
Unit
2.5
60
100
VDD
150
V
kΩ
0
±0.2
V
0
±0.2
V
The voltage deviation is the difference from the out voltage corresponding to the ideal value of the segment and
common outputs (VLCDn; n = 0, 1, 2).
(3) 1/2 Bias Method (VDD = 2.7 to 6.0 V)
Parameter
Symbol
LCD drive voltage
VLCD
LCD dividing resistor
LCD output voltage
deviationNote (common)
LCD output voltage
deviationNote(segment)
RLCD
Note
Test Conditions
VODC
IO = ±5 µA
VODS
IO = ±1 µA
2.7 V ≤ VLCD ≤ VDD
VLCD0 = VLCD
1
VLCD1 = VLCD × 2
VLCD2 = VLCD1
MIN.
TYP.
MAX.
Unit
2.7
60
100
VDD
150
V
kΩ
0
±0.2
V
0
±0.2
V
The voltage deviation is the difference from the out voltage corresponding to the ideal value of the segment and
common outputs (VLCDn; n = 0, 1, 2).
37
µPD78P064
AC CHARACTERISTICS
(1) Basic Operation (TA = –40 to +85 °C, VDD = 2.0 to 6.0 V)
Parameter
Cycle time
(Min. instruction
execution time)
Symbol
TCY
Test Conditions
Operating on main system clock
(fXX = 2.5 MHz)Note 1
Operating on main system clock
(fXX = 5.0 MHz)Note 2
MIN.
VDD = 2.7 to 6.0 V
4.5 ≤ VDD ≤ 6.0 V
2.7 ≤ VDD < 4.5 V
TI00 input high/
low-level width
122
MAX.
Unit
64
64
32
32
µs
µs
µs
µs
125
µs
tTIH00,
4.5 V ≤ VDD ≤ 6.0 V
2/fsam+0.1Note 4
µs
tTIL00
2.7 V ≤ VDD < 4.5 V
2/fsam+0.2Note 4
µs
2.0 V ≤ VDD < 2.7 V
Note 4
µs
TI01 input high/
low-level width
tTIH01,
TI input
frequency
fTI
TI1, TI2 input
high/low-level width
tTIH,
tTIL
Interrupt input
tINTH,
INTP0
high/low-level
tINTL
INTP1-INTP5, P110-P117
2/fsam+0.5
VDD = 2.7 to 6.0 V
tTIL01
VDD = 4.5 to 6.0 V
VDD = 4.5 to 6.0 V
VDD = 2.7 to 6.0 V
width
RESET low level
width
0.8
2.2
0.4
0.8
40Note 3
Operating on subsystem clock
TYP.
tRST
10
µs
20
µs
0
4
MHz
0
275
kHz
100
ns
1.8
µs
8/fsamNote 4
µs
10
µs
20
µs
VDD = 2.7 to 6.0 V
10
20
µs
µs
Notes 1. Main system clock fXX = fX/2 operation (when oscillation mode selection register (OSMS) is set to 00H)
2. Main system clock fXX = fX operation (when OSMS is set to 01H)
3. This is the value when the external clock is used. The value is 114 µs (min.) when the crystal resonator is used.
4. In combination with bits 0 (SCS0) and 1 (SCS1) of sampling clock select register (SCS), selection of fsam is
possible between fXX/2N, fXX/32, fXX/64 and fXX/128 (when N = 0 to 4).
38
µPD78P064
TCY vs VDD (At main system clock fXX = fX/2 operation)
TCY vs VDD (At main system clock fXX = fX operation)
60
60
Cycle Time TCY [µ s]
Cycle Time TCY [µ s]
32
10
Guaranteed Operation
Range
2.0
10
Guaranteed Operation
Range
2.0
1.0
0.8
1.0
0.8
0.4
0.4
0
1
2
3
4
5
6
0
Supply Voltage VDD [V]
1
2
3
4
5
6
Supply Voltage VDD [V]
(2) Serial Interface (TA = –40 to +85 °C, VDD = 2.0 to 6.0 V)
(a) Serial interface channel 0
(i)
3-wire serial I/O mode (SCK0... Internal clock output)
Parameter
Symbol
SCK0 cycle time
tKCY1
SCK0 high/low-level width
tKH1,
tKL1
SI0 setup time (to SCK0↑)
tSIK1
SI0 hold time (from SCK0↑)
tKSI1
SO0 output delay time
from SCK0↓
tKSO1
Test Conditions
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
VDD = 4.5 to 6.0 V
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
C = 100 pFNote
MIN.
TYP.
MAX.
Unit
800
1600
3200
tKCY1/2–50
tKCY1/2–100
100
150
300
ns
ns
ns
ns
ns
ns
ns
ns
400
ns
300
ns
Note C is the load capacitance of SCK0, SO0 output line.
39
µPD78P064
(ii) 3-wire serial I/O mode (SCK0...External clock input)
Parameter
Symbol
Test Conditions
SCK0 cycle time
tKCY2
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
SCK0 high/low-level width
tKH2,
tKL2
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
SI0 setup time (to SCK0↑)
MIN.
TYP.
MAX.
Unit
800
1600
3200
400
800
1600
ns
ns
ns
ns
ns
ns
tSIK2
100
ns
SI0 hold time (from SCK0↑)
tKSI2
400
ns
SO0 output delay time
from SCK0↓
tKSO2
SCK0 rise, fall time
C = 100 pFNote
tR2,
tF2
300
ns
1000
ns
MAX.
Unit
Note C is the load capacitance of SO0 output line.
(iii) SBI mode (SCK0...Internal clock output)
Parameter
Symbol
Test Conditions
VDD = 4.5 to 6.0 V
SCK0 cycle time
SCK0 high/low-level
width
MIN.
TYP.
800
ns
3200
ns
tKCY3/2–50
ns
tKCY3/2–150
ns
100
ns
300
ns
tKCY3/2
ns
tKCY3
tKH3,
VDD = 4.5 to 6.0 V
tKL3
SB0, SB1 setup time
(to SCK0↑)
tSIK3
SB0, SB1 hold time
(from SCK0↑)
tKSI3
VDD = 4.5 to 6.0 V
SB0, SB1 output delay
time from SCK0↓
tKSO3
SB0, SB1↓ from SCK0↑
tKSB
tKCY3
ns
SCK0↓ from SB0, SB1↓
tSBK
tKCY3
ns
SB0, SB1 high-level
width
tSBH
tKCY3
ns
SB0, SB1 low-level
width
tSBL
tKCY3
ns
R = 1 kΩ ,
C = 100 pFNote
VDD = 4.5 to 6.0 V
0
250
ns
0
1000
ns
Note R and C are the load resistance and load capacitance of the SCK0, SB0 and SB1 output line.
40
µPD78P064
(iv) SBI mode (SCK0...External clock input)
Parameter
Symbol
Test Conditions
VDD = 4.5 to 6.0 V
SCK0 cycle time
SCK0 high/low-level
width
MIN.
TYP.
MAX.
Unit
800
ns
3200
ns
400
ns
1600
ns
100
ns
300
ns
tKCY4/2
ns
tKCY4
tKH4,
VDD = 4.5 to 6.0 V
tKL4
SB0, SB1 setup time
(to SCK0↑)
tSIK4
SB0, SB1 hold time
(from SCK0↑)
tKSI4
VDD = 4.5 to 6.0 V
SB0, SB1 output delay
time from SCK0↓
tKSO4
SB0, SB1↓ from SCK0↑
tKSB
tKCY4
ns
SCK0↓ from SB0, SB1↓
tSBK
tKCY4
ns
SB0, SB1 high-level
width
tSBH
tKCY4
ns
SB0, SB1 low-level
width
tSBL
tKCY4
ns
SCK0 rise, fall time
tR4,
tF4
R = 1 kΩ ,
C = 100
VDD = 4.5 to 6.0 V
pFNote
0
300
ns
0
1000
ns
1000
ns
MAX.
Unit
Note R and C are the load resistance and load capacitance of the SB0 and SB1 output line.
(v) 2-wire serial I/O mode (SCK0... Internal clock output)
Parameter
Symbol
SCK0 cycle time
tKCY5
SCK0 high-level width
tKH5
SCK0 low-level width
tKL5
SB0, SB1 setup time
(to SCK0↑)
tSIK5
SB0, SB1 hold time
(from SCK0↑)
tKSI5
SB0, SB1 output delay
time from SCK0↓
tKSO5
Test Conditions
VDD = 2.7 to 6.0 V
VDD = 2.7 to 6.0 V
R = 1 kΩ,
C = 100 pFNote
VDD = 4.5 to 6.0 V
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
MIN.
TYP.
1600
3200
tKCY5/2–160
tKCY5/2–190
tKCY5/2–50
tKCY5/2–100
300
350
400
ns
ns
ns
ns
ns
ns
ns
ns
ns
600
ns
300
ns
Note R and C are the load resistance and load capacitance of the SCK0, SB0 and SB1 output line.
41
µPD78P064
(vi) 2-wire serial I/O mode (SCK0... External clock input)
Parameter
Symbol
Test Conditions
TYP.
MAX.
Unit
1600
3200
650
1300
800
1600
ns
ns
ns
ns
ns
ns
tSIK6
100
ns
SB0, SB1 hold time
(from SCK0↑)
tKSI6
tKCY6/2
ns
SB0, SB1 output delay
time from SCK0↓
tKSO6
SCK0 rise, fall time
tR6,
tF6
SCK0 cycle time
tKCY6
SCK0 high-level width
tKH6
SCK0 low-level width
tKL6
SB0, SB1 setup time
(to SCK0↑)
VDD = 2.7 to 6.0 V
MIN.
VDD = 2.7 to 6.0 V
VDD = 2.7 to 6.0 V
R = 1 kΩ,
VDD = 4.5 to 6.0 V
C = 100 pFNote
0
0
300
500
ns
ns
1000
ns
MAX.
Unit
Note R and C are the load resistance and load capacitance of the SB0 and SB1 output line.
(b) Serial interface channel 2
(i)
3-wire serial I/O mode (SCK2... Internal clock output)
Parameter
Symbol
SCK2 cycle time
tKCY7
SCK2 high/low-level width
tKH7,
tKL7
SI2 setup time (to SCK2↑)
tSIK7
SI2 hold time (from SCK2↑)
tKSI7
SO2 output delay time
from SCK2↓
tKSO1
Test Conditions
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
4.5 V ≤ VDD ≤ 6.0 V
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
C = 100 pFNote
Note C is the load capacitance of SCK2, SO2 output line.
42
MIN.
TYP.
800
1600
3200
tKCY7/2–50
tKCY7/2–100
100
150
300
ns
ns
ns
ns
ns
ns
ns
ns
400
ns
300
ns
µPD78P064
(ii) 3-wire serial I/O mode (SCK2...External clock input)
Parameter
Symbol
Test Conditions
SCK2 cycle time
tKCY8
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
SCK2 high/low-level width
tKH8,
tKL8
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
SI2 setup time (to SCK2↑)
MIN.
TYP.
MAX.
Unit
800
1600
3200
400
800
1600
ns
ns
ns
ns
ns
ns
tSIK8
100
ns
SI2 hold time (from SCK2↑)
tKSI8
400
ns
SO2 output delay time
from SCK2↓
tKSO8
SCK2 rise, fall time
C = 100 pFNote
tR8,
tF8
300
ns
1000
ns
MAX.
Unit
78125
39063
19531
bps
bps
bps
MAX.
Unit
39063
19531
9766
ns
ns
ns
ns
ns
ns
bps
bps
bps
1000
ns
Note C is the load capacitance of SO2 output line.
(iii) UART mode (Dedicated baud rate generator output)
Parameter
Symbol
Test Conditions
MIN.
TYP.
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
Transfer rate
(iv) UART mode (External clock input)
Parameter
Symbol
ASCK cycle time
tKCY9
ASCK high/low-level
width
tKH9,
tKL9
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
4.5 V ≤ VDD ≤ 6.0 V
2.7 V ≤ VDD < 4.5 V
Transfer rate
ASCK rise, fall time
Test Conditions
tR9,
tF9
MIN.
TYP.
800
1600
3200
400
800
1600
43
µPD78P064
AC Timing Test Point (Excluding X1, XT1 Input)
0.8 VDD
0.2 VDD
0.8 VDD
0.2 VDD
Test Points
Clock Timing
1/fX
tXL
tXH
VIH3 (MIN.)
VIL3 (MAX.)
X1 Input
1/fXT
tXTL
tXTH
VIH4 (MIN.)
VIL4 (MAX.)
XT1 Input
TI Timing
tTIL00, tTIL01
tTIH00, tTIH01
TI00, TI01
1/fTI
tTIL
TI1, TI2
44
tTIH
µPD78P064
Serial Transfer Timing
3-wire serial I/O mode:
tKCYm
tKLm
tKHm
tRn
tFn
SCK0, SCK2
tSIKm
SI0, SI2
tKSIm
Input Data
tKSOm
SO0, SO2
Output Data
m = 1, 2, 7, 8
n = 2, 8
SBI mode (bus release signal transfer):
tKCY3, 4
tKL3, 4
tKH3, 4
tR4
tF4
SCK0
tKSB
tSBL
tSBK
tSBH
tSIK3, 4
tKSI3, 4
SB0, SB1
tKSO3, 4
SBI mode (command signal transfer):
tKCY3, 4
tKL3, 4
tKH3, 4
tR4
tF4
SCK0
tKSB
tSBK
tSIK3, 4
tKSI3.4
SB0, SB1
tKSO3, 4
45
µPD78P064
2-wire serial I/O mode:
tKCY5.6
tKL5, 6
tKH5, 6
tR6
tF6
SCK0
tSIK5, 6
tKSI5, 6
tKSO5, 6
SB0, SB1
UART mode:
tKCY9
tKL9
tKH9
tR9
tF9
ASCK
A/D Converter (TA = –40 to +85 °C, AVDD = VDD = 4.5 to 6.0 V, AVSS = V SS = 0 V)
Parameter
Symbol
Test Conditions
Resolution
Overall error
MIN.
TYP.
MAX.
Unit
8
8
8
bit
2.0
%
200
µs
4.5 V ≤ AVREF ≤ AVDD
Note
Conversion time
tCONV
19.1
Sampling time
tSAMP
12/fXX
Analog input voltage
VIAN
AVSS
AVREF
V
Reference voltage
AVREF
2.0
AVDD
V
AVREF-AVSS resistance
RAIREF
4
µs
14
Note Quantization error (±1/2 LSB) is not included. This is expressed in proportion to the full-scale value.
46
kΩ
µPD78P064
DATA MEMORY STOP MODE LOW SUPPLY VOLTAGE DATA RETENTION CHARACTERISTICS (TA = –40 to +85 °C)
Parameter
Symbol
Data retention
supply voltage
VDDDR
Data retention
power supply
current
IDDDR
Release signal set time
tSREL
Oscillation
stabilization
wait time
Note
Test Conditions
MIN.
TYP.
MAX.
Unit
6.0
V
10
µA
1.8
VDDDR = 1.8 V
Subsystem clock stop and
feed-back resistor disconnected
0.1
µs
0
Release by RESET
217/fX
ms
Release by interrupt
Note
ms
tWAIT
In combination with bits 0 to 2 (OSTS0 to OSTS2) of oscillation stabilization time select register (OSTS), selection
of 212/fXX and 214/fXX to 217/fXX is possible.
Data Retention Timing (STOP Mode Release by RESET)
Internal Reset Operation
HALT Mode
Operating Mode
STOP Mode
Data Retention Mode
VDD
VDDDR
tSREL
STOP Instruction Execution
RESET
tWAIT
Data Retention Timing (Standby Release Signal: STOP Mode Release by Interrupt Signal)
HALT Mode
Operating Mode
STOP Mode
Data Retention Mode
VDD
VDDDR
tSREL
STOP Instruction Execution
Standby Release Signal
(Interrupt Request)
tWAIT
47
µPD78P064
Interrupt Input Timing
tINTL
tINTH
INTP0–INTP5
RESET Input Timing
tRSL
RESET
48
µPD78P064
PROM PROGRAMMING CHARACTERISTICS
DC Characteristics
(1) PROM Write Mode (TA = 25 ± 5 ˚C, VDD = 6.5 ± 0.25 V, VPP = 12.5 ± 0.3 V)
Symbol
SymbolNote
Input voltage, high
VIH
VIH
Input voltage, low
VIL
VIL
Output voltage, high
VOH
VOH
IOH = –1 mA
Output voltage, low
VOL
VOL
IOL = 1.6 mA
ILI
ILI
0 ≤ VIN ≤ VDD
VPP supply voltage
VPP
VPP
12.2
VDD supply voltage
VDD
VCC
6.25
VPP supply current
IPP
IPP
VDD supply current
IDD
ICC
Parameter
Input leakage current
Note
Test Conditions
MIN.
TYP.
MAX.
Unit
0.7 VDD
VDD
V
0
0.3 VDD
V
VDD –1.0
V
0.4
V
+10
µA
12.5
12.8
V
6.5
6.75
V
50
mA
50
mA
MAX.
Unit
–10
PGM = VIL
Symbol corresponding to the µPD27C1001A.
(2) PROM Read Mode (TA = 25 ± 5 ˚C, VDD = 5.0 ± 0.5 V, VPP = VDD ± 0.6 V)
Symbol
SymbolNote
Input voltage, high
VIH
VIH
0.7 VDD
VDD
V
Input voltage, low
VIL
VIL
0
0.3 VDD
V
VOH1
VOH1
IOH = –1 mA
VDD –1.0
V
VOH2
VOH2
IOH = –100 µA
VDD –0.5
V
VOL
VOL
IOL = 1.6 mA
Input leakage current
ILI
ILI
0 ≤ VIN ≤ VDD
Output leakage current
ILO
ILO
0 ≤ VOUT ≤ VDD, OE = VIH
VPP supply voltage
VPP
VPP
VDD –0.6
VDD supply voltage
VDD
VCC
4.5
VPP supply current
IPP
IPP
VDD supply current
IDD
ICCA1
Parameter
Output voltage, high
Output voltage, low
Note
Test Conditions
MIN.
TYP.
0.4
V
–10
+10
µA
–10
+10
µA
VDD
VDD +0.6
V
5.0
5.5
V
VPP = VDD
100
µA
CE = VIL, VIN = VIH
50
mA
Symbol corresponding to the µPD27C1001A.
49
µPD78P064
AC Characteristics
(1) PROM Write Mode
(a)
Page program mode (TA = 25 ± 5 °C, VDD = 6.5 ± 0.25 V, VPP = 12.5 ± 0.3 V)
Symbol
SymbolNote
Address setup time (to OE↓)
tAS
tAS
2
µs
OE setup time
tOES
tOES
2
µs
CE setup time (to OE↓)
tCES
tCES
2
µs
Input data setup time (to OE↓)
tDS
tDS
2
µs
tAH
tAH
2
µs
tAHL
tAHL
2
µs
tAHV
tAHV
0
µs
Input data hold time (from OE↑)
tDH
tDH
2
µs
Data output float delay time from OE↑
tDF
tDF
0
VPP setup time (to OE↓)
tVPS
tVPS
1.0
ms
VDD setup time (to OE↓)
tVDS
tVCS
1.0
ms
Program pulse width
tPW
tPW
0.095
Valid data delay time from OE↓
tOE
tOE
OE pulse width during data latching
tLW
tLW
1
µs
PGM setup time
tPGMS
tPGMS
2
µs
CE hold time
tCEH
tCEH
2
µs
OE hold time
tOEH
tOEH
2
µs
Parameter
Address hold time (from OE↑)
Note
(b)
Test Conditions
MIN.
TYP.
MAX.
250
0.1
Unit
ns
0.105
ms
1
µs
Corresponding µPD27C1001A symbol
Byte program mode (TA = 25 ± 5 °C, VDD = 6.5 ± 0.25 V, VPP = 12.5 ± 0.3 V)
Symbol
SymbolNote
Address setup time (to PGM↓)
tAS
tAS
2
µs
OE setup time
tOES
tOES
2
µs
CE setup time (to PGM↓)
tCES
tCES
2
µs
Input data setup time (to PGM↓)
tDS
tDS
2
µs
Address hold time (from OE↑)
tAH
tAH
2
µs
nput data hold time (from PGM↑)
tDH
tDH
2
µs
Data output float delay time from OE↑
tDF
tDF
0
VPP setup time (to PGM↓)
tVPS
tVPS
1.0
ms
VDD setup time (to PGM↓)
tVDS
tVCS
1.0
ms
Program pulse width
tPW
tPW
0.095
Valid data delay time from OE↓
tOE
tOE
OE hold time
tOEH
—
Parameter
Note
50
Corresponding µPD27C1001A symbol
Test Conditions
MIN.
2
TYP.
MAX.
250
0.1
Unit
ns
0.105
ms
1
µs
µs
µPD78P064
(2) PROM Read Mode (TA = 25 ± 5 °C, VDD = 5.0 ± 0.5 V, VPP = VDD ± 0.6 V)
Symbol
SymbolNote
Data output time from address
tACC
tACC
Data output delay time from CE↓
tCE
Data output delay time from OE↓
Parameter
MAX.
Unit
CE = OE = VIL
800
ns
tCE
OE = VIL
800
ns
tOE
tOE
CE = VIL
200
ns
Data output float delay time from OE↑
tDF
tDF
CE = VIL
0
60
ns
Data hold time from address
tDH
tDH
CE = OE = VIL
0
Note
Test Conditions
MIN.
TYP.
ns
Corresponding µPD27C1001A symbol
(3) PROM Programming Mode Setting (TA = 25 °C, VSS = 0 V)
Parameter
Symbol
PROM programming
mode setup time
Test Conditions
MIN.
tSMA
TYP.
MAX.
Unit
µs
10
PROM Write Mode Timing (Page program mode)
Page Data Latch
Page Program
Program Verify
A2–A16
tAS
tALH
tAHV
tDS
tDH
tDF
A0, A1
D0–D7
Hi–Z
Hi–Z
Hi–Z
tPGMS
tVPS
Data Input
tDF
VPP
Data
Output
tAH
VPP
VDD
tVDS
VDD + 1.5
VDD
VDD
tCES
tDEH
VIH
CE
VIL
tCEH
tPW
VIH
PGM
VIL
tLW
tDES
VIH
OE
VIL
51
µPD78P064
PROM Write Mode Timing (Byte program mode)
Program
Program/Verify
A0–A16
t AS
D0–D7
t DF
Hi-Z
Hi-Z
Data Input
t DS
Hi-Z
Data Output
t DH
t AH
VPP
VPP
VDD
t VPS
VDD + 1.5
VDD
VDD
t VDS
t DEM
VIH
CE
VIL
t CES
t PW
VIH
PGM
VIL
t OES
t OE
VIH
OE
VIL
Cautions 1. VDD must be applied before VPP and cut off after VPP.
2. VPP must not exceed +13.5 V including overshoot.
3. Removing and reinserting may adversely affect in reliability while +12.5 V is applied to VPP.
PROM Read Mode Timing
Effective Address
A0–A16
VIH
CE
VIL
t CE
VIH
OE
VIL
Note 1
t ACC
D0–D7
Hi-Z
t DF
Note 1
t OE
Note 2
t OH
Data Output
Hi-Z
Notes 1. When reading within the tACC range, the OE input delay time from the CE fall time must be maximum of
tACC – tOE.
2. tDF is the time from the point at which either OE or CE (whichever is first) reaches VIH.
52
µPD78P064
PROM Programming Mode Setting Timing
VDD
VPP
0
RESET
VDD
VPP
0
t SMA
A0–A16
Effective Address
53
µPD78P064
9. CHARACTERISTIC CURVES (REFERENCE VALUES)
IDD vs VDD (fX = fXX = 5.0 MHz)
(TA = 25 °C)
PCC = 00H
10
PCC = 01H
5.0
PCC = 02H
PCC = 03H
PCC = 04H
PCC = 30H
1.0
Supply current IDD (mA)
0.5
PCC = B0H
0.1
0.05
HALT
(X1 stops, XT1 oscillates)
0.01
fXX = 5.0 MHz
fXT = 32.768 kHz
0.005
0.001
0
1
2
3
4
Supply voltage VDD (V)
54
5
6
7
8
µPD78P064
IDD vs VDD (fX = 5.0 MHz, fXX = 2.5 MHz)
(TA = 25 °C)
10
PCC = 00H
5.0
PCC = 01H
PCC = 02H
PCC = 03H
PCC = 04H
PCC = 30H
HALT
(X1 oscillates, XT1 oscillates)
1.0
Supply current IDD (mA)
0.5
PCC = B0H
0.1
0.05
HALT
(X1 stops, XT1 oscillates)
0.01
fXX = 2.5 MHz
fXT = 32.768 kHz
0.005
0.001
0
1
2
3
4
5
6
7
8
Supply voltage VDD (V)
55
µPD78P064
10. PACKAGE DRAWINGS
100 PIN PLASTIC QFP (FINE PITCH) (
14)
A
B
75
76
51
50
F
Q
R
S
D
C
detail of lead end
26
25
100
1
G
H
I
M
J
M
P
K
N
L
NOTE
Each lead centerline is located within 0.10 mm (0.004 inch) of
its true position (T.P.) at maximum material condition.
Remark
Dimensions and materials of ES products are the
same as those of the mass production product.
ITEM
MILLIMETERS
INCHES
A
16.0±0.2
B
14.0±0.2
0.630±0.008
0.551 +0.009
–0.008
C
14.0±0.2
0.551 +0.009
–0.008
D
16.0±0.2
0.630±0.008
F
G
1.0
1.0
0.039
0.039
H
0.22 +0.05
–0.04
0.009±0.002
I
0.10
0.004
J
0.5 (T.P.)
0.020 (T.P.)
K
1.0±0.2
0.039 +0.009
–0.008
L
0.5±0.2
0.020 +0.008
–0.009
M
0.17 +0.03
–0.07
0.007 +0.001
–0.003
N
0.10
0.004
P
1.45
0.057
Q
0.125±0.075
0.005±0.003
R
S
5°±5°
1.7 MAX.
5°±5°
0.067 MAX.
P100GC-50-7EA-2
56
µPD78P064
100 PIN PLASTIC LQFP (FINE PITCH) (14×14)
A
B
75
76
51
50
detail of lead end
S
C D
Q
R
26
25
100
1
F
G
H
I
M
J
K
P
M
N
NOTE
Each lead centerline is located within 0.08 mm (0.003 inch) of
its true position (T.P.) at maximum material condition.
Remark
L
ITEM
MILLIMETERS
INCHES
A
16.00±0.20
0.630±0.008
B
14.00±0.20
0.551 +0.009
–0.008
C
14.00±0.20
0.551 +0.009
–0.008
D
16.00±0.20
0.630±0.008
F
1.00
0.039
G
1.00
0.039
H
0.22 +0.05
–0.04
0.009±0.002
I
0.08
0.003
J
0.50 (T.P.)
0.020 (T.P.)
K
1.00±0.20
0.039 +0.009
–0.008
L
0.50±0.20
0.020 +0.008
–0.009
M
0.17 +0.03
–0.07
0.007 +0.001
–0.003
N
0.08
0.003
Dimensions and materials of ES products are the
P
1.40±0.05
0.055±0.002
Q
0.10±0.05
0.004±0.002
same as those of the mass production product.
R
3° +7°
–3°
3° +7°
–3°
S
1.60 MAX.
0.063 MAX.
S100GC-50-8EU
57
µPD78P064
100 PIN PLASTIC QFP (14 × 20)
A
B
Q
F
G
H
I M
5°±5°
31
30
S
100
1
detail of lead end
D
51
50
C
80
81
J
M
P
K
N
L
P100GF-65-3BA1-2
NOTE
Each lead centerline is located within 0.15
mm (0.006 inch) of its true position (T.P.) at
maximum material condition.
Remark
MILLIMETERS
INCHES
A
23.6 ± 0.4
0.929 ± 0.016
B
20.0 ± 0.2
0.795+0.009
–0.008
C
14.0 ± 0.2
0.551+0.009
–0.008
D
17.6 ± 0.4
0.693 ± 0.016
F
0.8
0.031
G
0.6
0.024
H
0.30 ± 0.10
0.012+0.004
–0.005
I
0.15
0.006
J
0.65 (T.P.)
0.026 (T.P.)
K
1.8 ± 0.2
0.071+0.008
–0.009
L
0.8 ± 0.2
0.031+0.009
–0.008
M
0.15+0.10
–0.05
0.006+0.004
–0.003
N
0.10
0.004
P
2.7
0.106
Dimensions and materials of ES
Q
0.1 ± 0.1
0.004 ± 0.004
products are the same as those of the
S
3.0 MAX.
0.119 MAX.
mass production product.
58
ITEM
µPD78P064
100 PIN CERAMIC WQFN
A
K
B
D
U1
C
U
T
Q
S
W
100
H
I M
1
R
F
G
E
J
Z
X100KL-65A
NOTE
Each lead centerline is located within 0.06
mm (0.003 inch) of its true position (T.P.) at
maximum material condition.
ITEM
MILLIMETERS
INCHES
A
20.6 ± 0.27
0.811 ± 0.011
B
19.0
0.748
C
13.8
0.543
D
14.6 ± 0.27
0.575 ± 0.011
E
1.94
0.076
F
2.14
0.084
G
3.5 MAX.
0.138 MAX.
H
0.45 ± 0.10
0.018+0.004
–0.005
I
0.06
0.003
J
0.65
0.026
K
1.0 ± 0.2
0.039+0.009
–0.008
Q
C 0.3
C 0.012
R
0.875
0.034
S
1.125
0.044
T
R 1.925
R 0.076
U
8.45
0.333
U1
1.75
0.069
W
0.75 ± 0.2
0.030+0.008
–0.009
Z
0.10
0.004
59
µPD78P064
11. RECOMMENDED SOLDERING CONDITIONS
The µPD78P064 should be soldered and mounted under the conditions recommended in the table below.
For detail of recommended soldering conditions, refer to the information document Semiconductor Device Mounting
Technology Manual (C10535E).
For soldering methods and conditions other than those recommended below, contact our sales personnel.
Table 11-1. Surface Mounting Type Soldering Conditions
(1) µPD78P064GC-7EA: 100-pin plastic QFP (fine pitch) (14 × 14 mm)
µPD78P064GC-8EU: 100-pin plastic LQFP (fine pitch) (14 × 14 mm)
Soldering Method
Soldering Conditions
Recommended
Soldering Symbols
Infrared reflow
Package peak temperature: 235 °C, Duration: 30 sec. max. (at 210 °C or above),
Number of times: Twice max., Time limit: 7 daysNote (thereafter 10 hours prebaking
required at 125 °C)
<Precaution>
Products cannot be baked while packed in anything other than in a heat resistant tray
(i.e. they cannot be baked in a magazine, taping, or heat-labile tray).
IR35-107-2
VPS
Package peak temperature: 235 °C, Duration: 30 sec. max. (at 210 °C or above),
Number of times: Twice max., Time limit: 7 daysNote (thereafter 10 hours prebaking
required at 125 °C)
<Precaution>
Products cannot be baked while packed in anything other than in a heat resistant tray
(i.e. they cannot be baked in a magazine, taping, or heat-labile tray).
VP15-107-2
Partial heating
Pin temperature: 300 °C max., Duration: 3 sec. max. (per device side)
Note
—
For the storage period after dry-pack decapsulation, storage conditions are max. 25 °C, 65 % RH.
(2) µPD78P064GF-3BA: 100-pin plastic QFP (14 × 20 mm)
Soldering Method
Soldering Conditions
Recommended
Soldering Symbols
Infrared reflow
Package peak temperature: 235 °C, Duration: 30 sec. max. (at 210 °C or above),
Number of times: Three times max.
IR35-00-3
VPS
Package peak temperature: 215 °C, Duration: 40 sec. (at 200 °C or above),
Number of times: Three times max.
VP15-00-3
Wave soldering
Solder bath temperature: 260 °C max., Duration: 10 sec. max., Number of times:
Once, Preheating temperature: 120 °C max. (Package surface temperature)
WS60-00-1
Partial heating
Pin temperature: 300 °C max., Duration: 3 sec. max. (per device side)
Caution
60
—
Use of more than one soldering method should be avoided (except in the case of partial heating).
µPD78P064
APPENDIX A. DEVELOPMENT TOOLS
The following development tools are available for system development using µPD78P064.
Language Processing Software
RA78K/0Note 1, 2, 3, 4
78K/0 series common assembler package
Note 1, 2, 3, 4
78K/0 series common C compiler package
CC78K/0
DF78064Note 1, 2, 3, 4
Device file for µPD78064 subseries
CC78K/0-LNote 1, 2, 3, 4
78K/0 series common C compiler library source file
PROM Writing Tools
PG-1500
PROM programmer
Note 8
PA-78P0308GC (PA-78P064GC
Note 8
PA-78P0308GF (PA-78P064GF
)
)
Note 8
PA-78P0308KL-T (PA-78P064KL-T
PA-PG-1500
controllerNote 1, 2
Programmer adapters connected to PG-1500
)
PG-1500 control program
Debugging Tools
IE-78000-R
78K/0 series common in-circuit emulators
IE-78000-R-A
78K/0 series common in-circuit emulators (for integrated debugger)
IE-78000-R-BK
78K/0 series common break board
IE-780308-R-EM
µPD780308 subseries common emulation boards
IE-78000-R-SV3
Interface adapter and cable when an EWS is used as the host machine (for IE-78000-R-A)
IE-70000-98-IF-B
Interface adapter when PC-9800 series (except notebook PC) is used as the host machine
(for IE-78000-R-A)
IE-70000-98N-IF
Interface adapter and cable when PC-9800 series notebook PC is used as the host machine
(for IE-78000-R-A)
IE-70000-PC-IF-B
Interface adapter when IBM PC/ATTM is used as the host machine (for IE-78000-R-A)
EP-78064GC-R
µPD78064 subseries common emulation probes
EP-78064GF-R
TGC-100SDW
Adapter to be mounted on a target system board made for 100-pin plastic QFP (GC-7EA,
GC-8EU type)
A product of Tokyo Eletech Corp. (Tokyo 03-5295-1661). When purchasing this product,
consult your NEC distributor.
EV-9200GF-100
Socket to be mounted on a target system board made for 100-pin plastic QFP (GF-3BA type)
EV-9900
Jig used to remove µPD78P064KL-T from EV-9200GF-100
SM78K0Note 5, 6, 7
78K/0 series common system simulators
ID78K0Note 4, 5, 6, 7
IE-78000-R-A integrated debuggers
SD78K/0Note 1, 2
IE-78000-R screen debuggers
DF78064Note 1, 2, 4, 5, 6, 7
Device file for µPD78064 subseries
Real-Time OS
RX78K/0Note 1, 2, 3, 4
78K/0 series real-time OS
MX78K/0Note 1, 2, 3, 4
78K/0 series OS
61
µPD78P064
Fuzzy Inference Development Support System
FE9000Note 1, FE9200Note 6
Fuzzy knowledge data creation tool
FT9080Note 1, FT9085Note 2
Translator
FI78K/IINote 1, 2
Fuzzy inference module
FD78K/IINote 1, 2
Fussy inference debugger
Notes 1. PC-9800 series (MS-DOSTM) based
2. IBM PC/AT and compatible machines (PC DOSTM/IBM DOSTM/MS-DOS) based
3. HP9000 series 300TM (HP-UXTM) based
4. HP9000 series 700TM (HP-UX) based, SPARCstationTM (SunOSTM) based, EWS4800 series (EWS-UX/V) based
5. PC-9800 series (MS-DOS + WindowsTM) based
6. IBM PC/AT and compatible machines (PC DOS/IBM DOS/MS-DOS + Windows) based
7. NEWSTM (NEWS-OSTM) based
8. Maintenance Product
Remarks
62
1.
For third party development tools, refer to 78K/0 Series Selection Guide (U11126E).
2.
RA78K/0, CC78K/0, SM78K0, ID78K0, SD78K/0, and RX78K/0 are used in combination with DF78064.
µPD78P064
CONVERSION SOCKET (EV-9200GF-100) PACKAGE DRAWINGS AND
RECOMMENDED BOARD MOUNTING PATTERN
Figure A-1. EV-9200GF-100 Package Drawing
A
B
E
M
N
O
L
K
S
J
D
C
R
F
EV-9200GF-100
Q
1
No.1 pin index
P
G
H
I
EV-9200GF-100-G0E
ITEM
MILLIMETERS
INCHES
A
24.6
0.969
B
21
0.827
C
15
0.591
D
18.6
0.732
E
4-C 2
4-C 0.079
F
0.8
0.031
G
12.0
0.472
H
22.6
0.89
I
25.3
0.996
J
6.0
0.236
K
16.6
0.654
L
19.3
076
M
8.2
0.323
N
8.0
0.315
O
2.5
0.098
P
2.0
0.079
Q
0.35
0.014
R
φ 2.3
φ 0.091
S
φ 1.5
φ 0.059
63
µPD78P064
Figure A-2. EV-9200GF-100 Board Mounting Pattern
G
J
H
D
F
E
K
I
L
C
B
A
EV-9200GF-100-P1E
ITEM
MILLIMETERS
A
26.3
B
21.6
1.035
0.85
C
0.65±0.02 × 29=18.85±0.05
D
+0.003
0.65±0.02 × 19=12.35±0.05 0.026+0.001
–0.002 × 0.748=0.486 –0.002
0.026+0.001
–0.002
× 1.142=0.742+0.002
–0.002
E
15.6
0.614
F
20.3
0.799
G
12 ± 0.05
0.472+0.003
–0.002
H
6 ± 0.05
0.236+0.003
–0.002
I
0.35 ± 0.02
0.014+0.001
–0.001
J
φ 2.36 ± 0.03
φ 0.093+0.001
–0.002
K
φ 2.3
φ 0.091
L
φ 1.57 ± 0.03
φ 0.062+0.001
–0.002
Caution
64
INCHES
Dimensions of mount pad for EV-9200 and that for target
device (QFP) may be different in some parts. For the
recommended mount pad dimensions for QFP, refer to
"SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY
MANUAL" (C10535E).
µPD78P064
CONVERSION ADAPTER (TGC-100SDW) PACKAGE DRAWINGS
Figure A-3. TGC-100SDW Package Drawing
A
B
X
N
L
M
V
F E D
H I J K
X
T
Protrusion height
W
C
O
PQR S
U
G
Y
Z
e
a
n
m
k
g
d
c
I
b
j
i
f
h
ITEM
A
MILLIMETERS
INCHES
ITEM
21.55
0.848
a
MILLIMETERS
INCHES
14.45
0.569
B
0.5x24=12
0.020x0.945=0.472
b
1.85±0.25
0.073±0.010
C
D
0.5
0.020
0.5x24=12
0.020x0.945=0.472
c
d
3.5
2.0
0.138
0.079
E
15.0
3.9
21.55
0.591
0.848
e
F
f
0.25
0.154
0.010
G
φ 3.55
φ 0.140
g
φ 4.5
φ 0.177
H
10.9
0.429
h
16.0
0.630
I
13.3
0.524
i
1.125±0.3
0.044±0.012
J
K
15.7
18.1
0.618
0.713
j
k
0~5°
5.9
0.000~0.197°
0.232
0.031
L
13.75
0.541
l
0.8
M
0.5x24=12.0
0.020x0.945=0.472
m
2.4
0.094
N
O
1.125±0.3
1.125±0.2
0.044±0.012
0.044±0.008
n
2.7
0.106
P
7.5
0.295
Q
10.0
0.394
R
11.3
0.445
S
18.1
0.713
φ 5.0
φ 0.197
5.0
0.197
T
U
V
4- φ 1.3
4-φ 0.051
W
1.8
0.071
X
C 2.0
C 0.079
Y
Z
φ 0.9
φ 0.3
φ 0.035
φ 0.012
TGC-100SDW-G0E
Remark Manufactured by Tokyo Eletech Corp.
65
µPD78P064
APPENDIX B. RELATED DOCUMENTS
Device Related Documents
Document No.
Document Name
Japanese
English
µPD78064, 78064Y Subseries User’s Manual
U10105J
U10105E
µPD78062, 78063, 78064 Data Sheet
U12338J
U12338E
µPD78P064 Data Sheet
U11589J
This document
78K/0 Series User’s Manual (Instruction)
U12326J
U12326E
78K/0 Series Instruction Table
U10903J
—
78K/0 Series Instruction Set
U10904J
—
µPD78064 Subseries Special Function Register Table
IEM-6568
—
Fundamental (III)
U10182J
U10182E
Floating-point arithmetic
operation program
IEA-718
IEA-1289
78K/0 Series Application Note
Development Tool Related Documents (User’s Manual) (1/2)
Document No.
Document Name
Japanese
English
Operation
EEU-809
EEU-1399
Language
EEU-815
EEU-1404
EEU-817
EEU-1402
Operation
U11802J
U11802E
Assembly language
U11801J
U11801E
Structured assembly language
U11789J
U11789E
Operation
EEU-656
EEU-1280
Language
EEU-655
EEU-1284
Operation
U11517J
U11517E
Language
U11518J
U11518E
Programming know-how
EEA-618
EEA-1208
CC78K Series Library Source File
U12322J
—
PG-1500 PROM Programmer
U11940J
U11940E
PG-1500 Controller PC-9800 Series (MS-DOS) Based
EEU-704
EEU-1291
PG-1500 Controller IBM PC Series (PC DOS) Based
EEU-5008
U10540E
IE-78000-R
U11376J
U11376E
IE-78000-R-A
U10057J
U10057E
IE-78000-R-BK
EEU-867
EEU-1427
IE-780308-R-EM
U11362J
U11362E
EP-78064
EEU-934
EEU-1469
RA78K Series Assembler Package
RA78K Series Structured Assembler Preprocessor
RA78K0 Assembler Package
CC78K Series C Compiler
CC78K0 C Compiler
CC78K/0 C Compiler Application Note
66
µPD78P064
Development Tool Related Documents (User’s Manual) (2/2)
Document No.
Document Name
Japanese
English
EEU-5002
U10181E
SM78K0 System Sumilator Windows Based
Reference
SM78K Series System Simulator
External components user
open interface specification
U10092J
U10092E
ID78K0 Integrated Debugger EWS Based
Reference
U11151J
—
ID78K0 Integrated Debugger PC Based
Reference
U11539J
U11539E
ID78K0 Integrated Debugger Windows Based
Guide
U11649J
U11649E
SD78K/0 Screen Debugger
Introduction
EEU-852
U10539E
PC-9800 Series (MS-DOS) Based
Reference
U10952J
—
EEU-5024
EEU-1414
U11279J
U11279E
SD78K/0 Screen Debugger
Introduction
IBM PC/AT (PC DOS) Based
Reference
Caution The above related documents are subject to change without notice. For design purpose, etc.,
be sure to use the latest documents.
Embedded Software Related Documents (User’s Manual)
Document No.
Document Name
Japanese
English
Fundamental
U11537J
—
Installation
U11536J
—
Fundamental
U12257J
—
Fuzzy Knowledge Data Creation Tool
EEU-829
EEU-1438
78K/0, 78K/II, 87AD Series Fuzzy Inference Development Support System
Translator
EEU-862
EEU-1444
78K/0 Series Fuzzy Inference Development Support System Fuzzy Inference
Module
EEU-858
EEU-1441
78K/0 Series Fuzzy Inference Development Support System Fuzzy Inference
Debugger
EEU-921
EEU-1458
78K/0 Series Real-Time OS
78K/0 Series OS MX78K0
Other Related Documents
Document Name
Document No.
Japanese
IC Package Manual
English
C10943X
Semiconductor Device Mounting Technology Manual
C10535J
C10535E
Quality Grades on Semiconductor Devices
C11531J
C11531E
NEC Semiconductor Device Reliability and Quality Control
C10983J
C10983E
Electrostatic Discharge (ESD) Test
MEM-539
—
Semiconductor Devices Quality Guarantee Guide
C11893J
MEI-1202
Microcomputer-Related Product Guide (Products by Other Manufacturers)
U11416J
—
Caution The above related documents are subject to change without notice. For design purpose, etc.,
be sure to use the latest documents.
67
µPD78P064
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note: Strong electric field, when exposed to a MOS device, can cause destruction
of the gate oxide and ultimately degrade the device operation. Steps must
be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred. Environmental control must
be adequate. When it is dry, humidifier should be used. It is recommended
to avoid using insulators that easily build static electricity. Semiconductor
devices must be stored and transported in an anti-static container, static
shielding bag or conductive material.
All test and measurement tools
including work bench and floor should be grounded. The operator should
be grounded using wrist strap. Semiconductor devices must not be touched
with bare hands. Similar precautions need to be taken for PW boards with
semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note: No connection for CMOS device inputs can be cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input
level may be generated due to noise, etc., hence causing malfunction. CMOS
device behave differently than Bipolar or NMOS devices. Input levels of
CMOS devices must be fixed high or low by using a pull-up or pull-down
circuitry.
Each unused pin should be connected to VDD or GND with a
resistor, if it is considered to have a possibility of being an output pin. All
handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note: Power-on does not necessarily define initial status of MOS device. Production process of MOS does not define the initial operation status of the device.
Immediately after the power source is turned ON, the devices with reset
function have not yet been initialized. Hence, power-on does not guarantee
out-pin levels, I/O settings or contents of registers. Device is not initialized
until the reset signal is received. Reset operation must be executed immediately after power-on for devices having reset function.
68
µPD78P064
Regional Information
Some information contained in this document may vary from country to country. Before using any NEC
product in your application, please contact the NEC office in your country to obtain a list of authorized
representatives and distributors. They will verify:
• Device availability
• Ordering information
• Product release schedule
• Availability of related technical literature
• Development environment specifications (for example, specifications for third-party tools and
components, host computers, power plugs, AC supply voltages, and so forth)
• Network requirements
In addition, trademarks, registered trademarks, export restrictions, and other legal issues may also vary
from country to country.
NEC Electronics Inc. (U.S.)
NEC Electronics (Germany) GmbH
NEC Electronics Hong Kong Ltd.
Santa Clara, California
Tel: 800-366-9782
Fax: 800-729-9288
Benelux Office
Eindhoven, The Netherlands
Tel: 040-2445845
Fax: 040-2444580
Hong Kong
Tel: 2886-9318
Fax: 2886-9022/9044
NEC Electronics (Germany) GmbH
Duesseldorf, Germany
Tel: 0211-65 03 02
Fax: 0211-65 03 490
NEC Electronics Hong Kong Ltd.
Velizy-Villacoublay, France
Tel: 01-30-67 58 00
Fax: 01-30-67 58 99
Seoul Branch
Seoul, Korea
Tel: 02-528-0303
Fax: 02-528-4411
NEC Electronics (France) S.A.
NEC Electronics Singapore Pte. Ltd.
Spain Office
Madrid, Spain
Tel: 01-504-2787
Fax: 01-504-2860
United Square, Singapore 1130
Tel: 253-8311
Fax: 250-3583
NEC Electronics (France) S.A.
NEC Electronics (UK) Ltd.
Milton Keynes, UK
Tel: 01908-691-133
Fax: 01908-670-290
NEC Electronics Italiana s.r.1.
Milano, Italy
Tel: 02-66 75 41
Fax: 02-66 75 42 99
NEC Electronics Taiwan Ltd.
NEC Electronics (Germany) GmbH
Scandinavia Office
Taeby, Sweden
Tel: 08-63 80 820
Fax: 08-63 80 388
Taipei, Taiwan
Tel: 02-719-2377
Fax: 02-719-5951
NEC do Brasil S.A.
Sao Paulo-SP, Brasil
Tel: 011-889-1680
Fax: 011-889-1689
J96. 8
69
µPD78P064
FIP, QTOP and IEBus are trademarks of NEC Corporation.
MS-DOS and Windows are either registered trademarks or trademarks of Microsoft Corporation in the
United States and/or other countries.
IBM DOS, PC/AT and PC DOS are trademarks of IBM Corporation.
HP9000 series 300, HP9000 series 700 and HP-UX are trademarks of Hewlett-Packard Company.
SPARCstation is a trademark of SPARC International, Inc.
Sun OS is a trademark of Sun Microsystems, Inc.
NEWS and NEWS-OS are trademarks of Sony Corporation.
The documents referred to in this publication may include preliminary versions.
However preliminary
versions are not marked as such.
The export of these products from Japan is regulated by the Japanese government. The export of some or all of these
products may be prohibited without governmental license. To export or re-export some or all of these products from a
country other than Japan may also be prohibited without a license from that country. Please call an NEC sales
representative.
Lisence not needed
: µPD78P064KL-T
The customer must judge the need for licence : µPD78P064GC-7EA, 78P064GC-8EU, 78P064GF-3BA
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
2