2SK2111 DS - Renesas Electronics

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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2111 is a N-channel MOS FET of a vertical type and
PACKAGE DIMENSIONS (in mm)
is a switching element that can be directly driven by the output of
4.5 ± 0.1
an IC operating at 5 V.
1.5 ± 0.1
1.6 ± 0.2
0.8 MIN.
motors and DC/DC converters.
FEATURES
D
S
0.42
±0.06
• Low ON resistance
RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A
G
2.5 ± 0.1
characteristics and is ideal for driving the actuators, such as
4.0 ± 0.25
This product has a low ON resistance and superb switching
0.42
0.47 ±0.06
1.5 ±0.06
3.0
0.41+0.03
–0.05
EQUIVALENT CIRCUIT
• High switching speed
ton + toff < 100 ns
Drain (D)
• Low parasitic capacitance
Gate (G)
Internal diode
Gate protection
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Source (S)
Marking: NU
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
60
V
Gate to Source Voltage
VGSS
VDS = 0
±20
V
Drain Current (DC)
ID(DC)
±1.0
A
Drain Current (Pulse)
ID(pulse)
PW ≤ 10 ms,
Duty cycle ≤ 50 %
±2.0
A
Total Power Dissipation
PT
16 cm2 × 0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Document No. D11231EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
1996
2SK2111
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
IDSS
VDS = 60 V, VGS = 0
1.0
µA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0
±10
µA
Gate Cut-Off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
0.8
2.0
V
Forward Transfer Admittance
|yfs|
VDS = 10 V, ID = 0.5 A
0.4
Drain to Source On-State Resistance
RDS(on)1
VGS = 4.0 V, ID =0.5 A
0.32
0.6
Ω
Drain to Source On-State Resistance
RDS(on)2
VGS = 10 V, ID = 0.5 A
0.24
0.45
Ω
Input Capacitance
Ciss
VDS = 10 V, VGS = 0,
170
pF
Output Capacitance
Coss
f = 1.0 MHz
87
pF
Reverse Transfer Capacitance
Crss
32
pF
Turn-On Delay Time
td(on)
VDD = 25 V, ID = 0.5 A
2.8
ns
tr
VGS(on) = 10 V, RG = 10 Ω
2.3
ns
Turn-Off Delay Time
td(off)
RL = 50 Ω
55
ns
Fall Time
tf
27
ns
Rise Time
2
SYMBOL
1.4
S
2SK2111
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
100
10
5
ID - Drain Current - A
dT - Derating Factor - %
80
60
40
20
1
2
10
0
1
PW
0.5
m
s
m
s
=1
00
DC
ms
0.2
Single pulse
0
30
60
90
120
0.1
150
1
TA - Ambient Temperature - ˚C
50
100
1
10 V
VDS = 10 V
2.5 V
0.8
0.6
ID - Drain Current - A
4.5 V
4.0 V
3.5 V
3.0 V
VGS = 2.0 V
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
TA = 75 ˚C
25 ˚C
–25 ˚C
0.01
0.001
0.0001
0.5
1
1.5
2
2.5
3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
VDS = 10 V
1
TA = –25 ˚C
25 ˚C
75 ˚C
0.1
0.01
0.001
0.1
0.01
0.1
ID - Drain Current - A
1
RDS(on) - Drain to Source On-State Resistance - Ω
ID - Drain Current - A
20
10
TRANSFER CHARACTERISTICS
1.0
|yfs| - Forward Transfer Admittance - S
5
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
2
10
VGS = 4 V
0.5
TA = 75 ˚C
25 ˚C
–25 ˚C
0
0.01
0.1
1
10
ID - Drain Current - A
3
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1
VGS = 10 V
0.5
TA = 75 ˚C
25 ˚C
–25 ˚C
0
0.01
0.1
1
10
RDS(on) - Drain to Source On-State Resistance - Ω
RDS(on) - Drain to Source On-State Resistance - Ω
2SK2111
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1
0.5
0
ID - Drain Current - A
100
Coss
50
Crss
20
10
0.1 0.2
0.5
1
2
5
10 20
50 100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
ISD - Diode Forward Current - A
1
0.1
0.01
0.001
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD - Source to Drain Voltage - V
4
20
td(off)
50
tf
20
tr
10
5
td(on)
2
1
0.05
0.1
0.2
0.5
VDD = 25 V
VGS(on) = 10 V
1
5
2
ID - Drain Current - A
VDS - Drain to Source Voltage - V
0.0001
0.2
15
100
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
Ciss
10
SWITCHING CHARACTERISTICS
VGS = 0
f = 1 MHz
200
5
VGS - Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
500
ID = 0.5 A
1
2SK2111
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
5
2SK2111
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11