RJH60V2BDPP-M0 - Renesas Electronics

Preliminary Datasheet
RJH60V2BDPP-M0
600V - 12A - IGBT
Application: Inverter
R07DS0760EJ0100
Rev.1.00
May 25, 2012
Features
 Short circuit withstand time (6 s typ.)
 Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 12 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode (25 ns typ.) in one package
 Trench gate and thin wafer technology
 High speed switching
tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 12 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
1. Gate
2. Collector
3. Emitter
G
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
25
12
50
12
50
34
3.7
2.5
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
R07DS0760EJ0100 Rev.1.00
May 25, 2012
Page 1 of 9
RJH60V2BDPP-M0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Collector to emitter breakdown
voltage
V(BR)CES
Min
600
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
ICES / IR
—
—
5
A
VCE = 600 V, VGE = 0
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
—
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
2.2
450
37
18
32
5
17
33
15
65
±1
7.5
2.2
—
—
—
—
—
—
—
—
—
—
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 12 A, VGE = 15 V Note3
IC = 25 A, VGE = 15 V Note3
tf
Eon
Eoff
Etotal
tsc
—
—
—
—
3
75
0.03
0.18
0.21
6
—
—
—
—
—
ns
mJ
mJ
mJ
s
FRD forward voltage
VF
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
trr
Qrr
Irr
—
—
—
—
2.5
25
0.02
1.2
—
—
—
—
V
ns
C
A
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
Typ
—
Max
—
Unit
V
Test Conditions
IC =10 A, VGE = 0
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 300 V
IC = 12 A
VCC = 300 V
VGE = 15 V
IC = 12 A
Rg = 5 
Inductive load
Tc = 100 C
VCC  360 V, VGE = 15 V
IF = 12 A Note3
IF = 12 A
diF/dt = 100 A/s
Notes: 3. Pulse test.
R07DS0760EJ0100 Rev.1.00
May 25, 2012
Page 2 of 9
RJH60V2BDPP-M0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
Maximum DC Collector Current vs.
Case Temperature
30
Collector Current IC (A)
Collector Dissipation Pc (W)
50
40
30
20
10
0
25
50
75
15
10
5
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off Safe Operation Area
80
PW
10
10
0μ
s
=
10
Collector Current IC (A)
100
μs
1
0.1
0.01
1
60
40
20
Tc = 25°C
Single pulse
0
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Typical Output Characteristics
50
Tc = 25°C
Pulse Test
50
15 V
Collector Current IC (A)
Collector Current IC (A)
20
0
0
Collector Current IC (A)
25
40
30
12 V
20
10 V
10
Tc = 150°C
Pulse Test
15 V
40
30
12 V
20
10 V
10
VGE = 8 V
VGE = 8 V
0
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS0760EJ0100 Rev.1.00
May 25, 2012
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 9
Preliminary
5
Tc = 25°C
Pulse Test
4
3
IC = 25 A
2
12 A
1
8
10
12
14
16
18
20
Collector Current IC (A)
5
Tc = 150°C
Pulse Test
4
3
IC = 25 A
2
12 A
1
8
16
18
20
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Tc = 25°C
150°C
30
20
VCE = 10 V
Pulse Test
0
4
0
8
12
16
20
4
VGE = 15 V
Pulse Test
3
IC = 25 A
2
12 A
1
0
−25
0
25
50
75
100 125 150
Case Temparature Tc (°C)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
Frequency Characteristics (Typical)
6
10
8
IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
Collector Current IC(RSM) (A)
Gate to Emitter Cutoff Voltage VGE(off) (V)
14
12
Typical Transfer Characteristics
40
0
−25
10
Gate to Emitter Voltage VGE (V)
50
10
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage
VCE(sat) (V)
RJH60V2BDPP-M0
5
0
Collector current wave
(Square wave)
4
3
2
Tj = 125°C, Tc = 90°C
VCE = 400 V, VGE = 15 V
Rg = 5 Ω, duty = 50%
1
0
0
25
50
75
100 125 150
Case Temparature Tc (°C)
R07DS0760EJ0100 Rev.1.00
May 25, 2012
1
10
100
1000
Frequency f (kHz)
Page 4 of 9
RJH60V2BDPP-M0
Preliminary
Switching Characteristics (Typical) (1)
10
Swithing Energy Losses E (mJ)
tf
100
td(off)
td(on)
10
tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
Eoff
0.1
Eon
0.01
1
100
10
1
100
Collector Current IC (A)
(Inductive load)
Switching Characteristics (Typical) (3)
Switching Characteristics (Typical) (4)
1
1000
VCC = 300 V, VGE = 15 V
IC = 12 A, Tc = 150°C
tf
100
td(off)
td(on)
tr
Eoff
Eon
0.1
VCC = 300 V, VGE = 15 V
IC = 12 A, Tc = 150°C
0.01
10
1
10
100
1
1000
Swithing Energy Losses E (mJ)
VCC = 300 V, VGE = 15 V
IC = 12 A, Rg = 5 Ω
tf
td(off)
td(on)
tr
10
25
50
75
100
125
Case Temperature Tc (°C)
(Inductive load)
R07DS0760EJ0100 Rev.1.00
May 25, 2012
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
100
10
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Times t (ns)
10
Collector Current IC (A)
(Inductive load)
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
Switching Times t (ns)
Switching Characteristics (Typical) (2)
150
1
Eoff
Eon
0.1
VCC = 300 V, VGE = 15 V
IC =12 A, Rg = 5 Ω
0.01
25
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Page 5 of 9
RJH60V2BDPP-M0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
VGE = 0 V
f = 1 MHz
Ta = 25°C
1000
Cies
100
Coes
10
Cres
1
0
50
100
150
200
250
800
600
12
400
8
200
0
300
0
10
150
100
Tc = 150°C
25°C
0
40
80
120
160
Reverse Recovery Charge Qrr (μC)
Reverse Recovery Time trr (ns)
200
0
40
0
50
0.20
VCC = 300 V
IF = 17 A
0.16
0.12
Tc = 150°C
0.08
0.04
25°C
0
200
0
Diode Current Slope diF/dt (A/μs)
40
80
120
160
200
Diode Current Slope diF /dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical)
16
50
VCC = 300 V
IF = 17 A
Forward Current IF (A)
Reverse Recovery Current Irr (A)
30
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
VCC = 300 V
IF = 17 A
50
20
Gate Charge Qg (nc)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
250
4
VCC = 300 V
IC = 12 A
Tc = 25°C
VCE
Collector to Emitter Voltage VCE (V)
300
16
VGE
Gate to Emitter Voltage VGE (V)
Capacitance C (pF)
10000
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
12
8
Tc = 150°C
4
25°C
0
0
40
80
120
160
200
Diode Current Slope diF/dt (A/μs)
R07DS0760EJ0100 Rev.1.00
May 25, 2012
VGE = 0 V
Pulse Test
40
30
Tc = 150°C
20
25°C
10
0
0
1
2
3
4
C-E Diode Forward Voltage VCEF (V)
Page 6 of 9
Normalized Transient Thermal Impedance γs (t)
RJH60V2BDPP-M0
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
1
D=1
0.5
θj – c(t) = γs (t) • θj – c
θj – c = 3.7°C/W, Tc = 25°C
0.2
0.1
0.1
0.05
2
0.0
PDM
D=
0.01
1 shot pulse
0.01
100 μ
1m
PW
T
PW
T
10 m
100 m
Pulse Width
1
10
100
PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
1
D=1
0.5
θj – c(t) = γs (t) • θj – c
θj – c = 2.5°C/W, Tc = 25°C
0.2
0.1
0.1
0.05
PDM
0.02
0.01
1 shot pulse
0.01
100 μ
R07DS0760EJ0100 Rev.1.00
May 25, 2012
1m
D=
PW
T
PW
T
10 m
100 m
Pulse Width
1
10
100
PW (s)
Page 7 of 9
RJH60V2BDPP-M0
Preliminary
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC
D.U.T
90%
VCC
90%
Rg
10%
10%
td(off)
Diode Reverse Recovery Time Test Circuit
tf
td(on)
tr
Waveform
VCC
IF
D.U.T
IF
diF/dt
L
trr
0
Irr
Rg
R07DS0760EJ0100 Rev.1.00
May 25, 2012
0.5 Irr
0.9 Irr
Page 8 of 9
RJH60V2BDPP-M0
Preliminary
Package Dimension
Package Name
TO-220FL
JEITA Package Code
⎯
Previous Code
TO-220FL
RENESAS Code
PRSS0003AF-A
Unit: mm
6.5 ± 0.3
3.0 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
3.6 ± 0.3
12.5 ± 0.5
15.0 ± 0.3
10.0 ± 0.3
MASS[Typ.]
1.5g
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
0.40 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Ordering Information
Orderable Part Number
RJH60V2BDPP-M0#T2
R07DS0760EJ0100 Rev.1.00
May 25, 2012
Quantity
600 pcs
Shipping Container
Box (Tube)
Page 9 of 9
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