RENESAS RJH60M6DPQ-E0

Preliminary Datasheet
RJH60M6DPQ-E0
600V - 40A - IGBT
Application: Inverter
R07DS1088EJ0100
Rev.1.00
Jun 27, 2013
Features
• Short circuit withstand time (8 μs typ.)
• Low collector to emitter saturation voltage
VCE(sat) = 1.8 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode (100 ns typ.) in one package
• Trench gate and thin wafer technology
• High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 40 A, Rg = 5 Ω, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1 2
E
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Symbol
VCES / VR
VGES
IC
IC
IC(peak) Note1
IDF
IDF(peak) Note1
PC Note2
θj-c Note2
θj-cd Note2
Tj
Tstg
Ratings
600
±30
80
40
120
50
200
298
0.42
1.07
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/ W
°C/ W
°C
°C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
Page 1 of 9
RJH60M6DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Symbol
ICES / IR
Min
—
Typ
—
Max
5
Unit
μA
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.8
2.2
2500
175
100
170
20
90
55
50
215
50
1.11
±1
7
2.3
—
—
—
—
—
—
—
—
—
—
—
—
μA
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
Eoff
Etotal
tsc
—
—
6
0.99
2.10
8
—
—
—
mJ
mJ
μs
FRD Forward voltage
VF
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
trr
Qrr
Irr
—
—
—
—
1.3
100
0.22
5.0
1.8
—
—
—
V
ns
μC
A
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Test Conditions
VCE = 600 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 40 A, VGE = 15 V Note3
IC = 80 A, VGE = 15 V Note3
VCE = 25 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 300 V
IC = 40 A
VCC = 300 V
VGE = 15 V
IC = 40 A
Rg = 5 Ω
Inductive load
Tc = 100 °C
VCC ≤ 360 V, VGE = 15 V
IF = 40 A Note3
IF = 40 A
diF/dt = 100 A/μs
Notes: 3. Pulse test.
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
Page 2 of 9
RJH60M6DPQ-E0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
Maximum DC Collector Current vs.
Case Temperature
100
300
Collector Current IC (A)
Collector Dissipation Pc (W)
350
250
200
150
100
50
0
25
50
75
40
20
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA
1000
100
PW
10
0
=
μs
10
Collector Current IC (A)
140
μs
10
1
0.1
1
Tc = 25°C
Single pulse
120
100
80
60
40
20
0
10
100
0
1000
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Typical Output Characteristics
120
120
Tc = 25°C
Pulse Test
100
15 V
80
60
10 V
40
20
15 V
Tc = 150°C
Pulse Test
12 V
Collector Current IC (A)
Collector Current IC (A)
60
0
0
Collector Current IC (A)
80
100
12 V
80
10 V
60
40
VGE = 8 V
20
VGE = 8 V
0
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 9
RJH60M6DPQ-E0
Preliminary
Collector to Emitter Saturation Voltage
VCE(sat) (V)
5
Tc = 25°C
Pulse Test
4
3
IC = 80 A
2
40 A
20 A
1
8
10
12
14
16
18
5
Tc = 150°C
Pulse Test
4
3
IC = 80 A
2
1
8
12
14
16
18
20
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Ta = 25°C
150°C
80
60
40
20
VCE = 10 V
Pulse Test
0
0
4
8
12
16
20
4
VGE = 15 V
Pulse Test
3
IC = 80 A
2
40 A
20 A
1
0
−25
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
Frequency Characteristics (Typical)
10
35
8
IC = 10 mA
6
1 mA
4
2
VCE = 10 V
Pulse Test
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
Collector Current IC(RMS) (A)
Gate to Emitter Cutoff Voltage VGE(off) (V)
10
Gate to Emitter Voltage VGE (V)
100
0
−25
40 A
20 A
20
120
Collector Current IC (A)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
30
0
Collector current wave
(Square wave)
25
20
15
Tj = 125°C
10 Tc = 90°C
VCE = 400 V
5 VGE = 15 V
Rg = 5 Ω
duty = 50%
0
1
10
100
1000
Frequency f (kHz)
Page 4 of 9
RJH60M6DPQ-E0
Preliminary
Switching Characteristics (Typical) (1)
Switching Characteristics (Typical) (2)
100
Swithing Energy Losses E (mJ)
Switching Times t (ns)
1000
td(off)
100
tf
td(on)
tr
10
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
1
1
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Tc = 150°C
10
1
Eoff
Eon
0.1
0.01
10
1
100
Switching Characteristics (Typical) (4)
Switching Characteristics (Typical) (3)
Swithing Energy Losses E (mJ)
Switching Time t (ns)
10000
VCC = 300 V, VGE = 15 V
IC = 40 A, Tc = 150°C
1000
td(off)
tr
td(on)
tf
10
10
Eoff
Eon
1
0.1
VCC = 300 V, VGE = 15 V
IC = 40 A, Tc = 150°C
0.01
1
10
1
100
Swithing Energy Losses E (mJ)
1000
td(off)
tr
td(on)
tf
10
1
25
VCC = 300 V, VGE = 15 V
IC = 40 A, Rg = 5 Ω
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
100
Switching Characteristics (Typical) (6)
Switching Characteristics (Typical) (5)
100
10
Gate Registance Rg (Ω)
(Inductive load)
Gate Resistance Rg (Ω)
(Inductive load)
Switching Times t (ns)
100
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
100
10
10
Eoff
1
Eon
0.1
0.01
25
VCC = 300 V, VGE = 15 V
IC = 40 A, Rg = 5 Ω
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Page 5 of 9
RJH60M6DPQ-E0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
Capacitance C (pF)
VGE = 0 V, f = 1 MHz
Tc = 25°C
Cies
1000
100
Coes
Cres
10
0
50
100
150
200
250
16
800
VGE
600
12
400
8
200
VCE
0
300
0
40
Reverse Recovery Time trr (ns)
200
160
Tc = 150°C
120
25°C
40
VCC = 300 V
IF = 40 A
0
40
80
120
160
0
200
1.0
VCC = 300 V
IF = 40 A
0.8
0.6
Tc = 150°C
0.4
0.2
25°C
0
0
200
40
80
120
160
200
Diode Current Slope diF/dt (A/µs)
Diode Current Slope diF/dt (A/µs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
Forward Current vs. Forward Voltage (Typical)
16
200
VCC = 300 V
IF = 40 A
Forward Current IF (A)
Reverse Recovery Current Irr (A)
160
120
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
Reverse Recovery Charge Qrr (µC)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
0
80
Gate Charge Qg (nC)
Collector to Emitter Voltage VCE (V)
80
4
VCC = 300 V
IC = 40 A
Tc = 25°C
Gate to Emitter Voltage VGE (V)
10000
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
12
Tc = 150°C
8
4
25°C
0
VCE = 0 V
Pulse Test
160
Tc = 25°C
120
150°C
80
40
0
0
40
80
120
160
200
Diode Current Slope diF/dt (A/µs)
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
0
0.5
1.0
1.5
2.0
2.5
3.0
C-E Diode Forward Voltage VCEF (V)
Page 6 of 9
Preliminary
Normalized Transient Thermal Impedance γs (t)
RJH60M6DPQ-E0
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
10
Tc = 25°C
1
D=1
0.5
0.2
θj – c(t) = γs (t) • θj – c
θj – c = 0.42°C/W, Tc = 25°C
0.1
0.1
0.05
0.02
0.01
1 shot pulse
PDM
D=
PW
T
PW
T
0.01
100 μ
1m
10 m
100 m
Pulse Width
1
10
100
PW (s)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
10
Tc = 25°C
1
D=1
0.5
θj – c(t) = γs (t) • θj – c
θj – c = 1.07°C/W, Tc = 25°C
0.2
0.1
.05
0.1 0
PDM
D=
0.02
0.01
1 shot pulse
0.01
100 μ
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
1m
PW
T
PW
T
10 m
100 m
Pulse Width
1
10
100
PW (s)
Page 7 of 9
RJH60M6DPQ-E0
Preliminary
Switching Time Test Circuit
Waveform
90%
VGE
Diode clamp
10%
L
IC
D.U.T
90%
VCC
90%
Rg
10%
10%
td(off)
tf
td(on)
tr
Waveform
Diode Reverse Recovery Time Test Circuit
VCC
IF
D.U.T
IF
diF/dt
L
trr
0
Irr
Rg
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
0.5 Irr
0.9 Irr
Page 8 of 9
RJH60M6DPQ-E0
Preliminary
Package Dimension
JEITA Package Code
⎯
RENESAS Code
PRSS0003ZE-A
Previous Code
⎯
MASS[Typ.]
6.0g
Unit: mm
φ3.60 ± 0.1
5.02 ± 0.19
15.94 ± 0.19
17.63
4.5 max
20.19 ± 0.38
21.13 ± 0.33
6.15
Package Name
TO-247
5.45
0.1
2.10 +– 0.2
13.26
1.27 ± 0.13
5.45
0.71 ± 0.1
2.41
Ordering Information
Orderable Part Number
RJH60M6DPQ-E0#T2
R07DS1088EJ0100 Rev.1.00
Jun 27, 2013
Quantity
450 pcs
Shipping Container
Tube
Page 9 of 9
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Colophon 2.2