S10040340 S10040340 GaAs Push Pull Hybrid 40MHz to 1GHz Package: SOT-115J The S10040340 is a Hybrid Push Pull amplifier module. The part employs GaAs die and is operated from 40MHz to 1GHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Extremely Low Noise ■ Unconditionally Stable Under All Terminations ■ 34.5dB Min. Gain at 1GHz ■ 280mA Max. at 24VDC Applications ■ 40MHz to 1GHz CATV Amplifier Systems Ordering Information S10040340 Box with 50 Pieces Absolute Maximum Ratings Parameter Rating Unit RF Input Voltage (single tone) 75 dBmV DC Supply Over-Voltage (5 minutes) 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS140221 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 3 S10040340 Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω General Performance 34.0 dB f = 50MHz 36.5 dB f = 1000MHz 2.5 dB f = 40MHz to 1000MHz 1.0 dB f = 40MHz to 1000MHz 20.0 dB f = 40MHz to 160MHz 17.0 dB f = 160MHz to 870MHz 16.0 dB f = 870MHz to 1000MHz 20.0 dB f = 40MHz to 160MHz 17.0 dB f = 160MHz to 870MHz 16.0 dB f = 870MHz to 1000MHz 4.5 dB f = 50MHz to 1000MHz 280.0 mA Power Gain 34.5 [1] Slope 0.5 1.5 Flatness of Frequency Response Input Return Loss Output Return Loss Noise Figure Total Current Consumption (DC) 240.0 V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω Distortion Data 40MHz to 750MHz CTB -66 -64 dBc XMOD -60 -58 dBc CSO -65 -63 dBc 112 ch. flat, VO = 44dBmV[2] 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 112 channels, NTSC frequency raster: 55.25MHz to 745.25MHz, +44dBmV flat output level. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140221 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 S10040340 Package Drawing (Dimensions in millimeters) I U 123 5 7 89 C E J S P R M K O T Q øG N D 0 B 5 10mm scale H L F A Notes: European Projection Pinning: Pin Name 1 Input 2-3 GND 4 5 +VB 6 Nominal Min Max A 44,6 ± 0,2 44,4 44,8 B 13,6 ± 0,2 13,4 44,4 13,8 C 20,4 ± 0,5 19,9 20,9 D 8 ± 0,15 7,85 8,15 E 12,6 ± 0,15 12,45 12,75 F 38,1 ± 0,2 37,9 38,3 G 4 +0,2 / -0,05 3,95 4,2 H 4 ± 0,2 3,8 4,2 I 25,4 ± 0,2 25,2 25,6 J UNC 6-32 - - K 4,2 ± 0,2 4,0 4,4 L 27,2 ± 0,2 27,0 27,4 M 11,6 ± 0,5 11,1 12,1 N 5,8 ± 0,4 5,4 6,2 O 0,25 ± 0,02 0,23 0,27 P 0,45 ± 0,03 0,42 0,48 Q 2,54 ± 0,3 2,24 2,84 R 2,54 ± 0,5 2,04 3,04 S 2,54 ± 0,25 2,29 2,79 7-8 GND T 5,08 ± 0,25 4,83 5,33 9 Output U 5,08 ± 0,25 4,83 5,33 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS140221 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3