RFAM2790 RFAM2790 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier 45MHz to 1003MHz GaAs Edge QAM Integrated Amplifier Package: 9-pin, 11.0mm x 11.0mm x 1.375mm V+ POWER ENABLE Features Excellent Linearity Extremely High Output Capability Voltage Controlled Attenuator Power Enable Feature Optimal Reliability Low Noise Unconditionally Stable Under all Terminations 27dB Typical Gain at 1003MHz 410mA Typical at 12VDC Applications OUTPUT Preamp INPUT 45MHz to 1003MHz Downstream Edge QAM RF Modulators Headend Equipment Driver ATTENUATOR ADJUST Functional Block Diagram Product Description The RFAM2790 is an integrated edge QAM amplifier module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45MHz to 1003MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Ordering Information RFAM2790SB RFAM2790SR RFAM2790TR7 RFAM2790TR13 RFAM2790PCBA-410 Sample bag with 5 pieces 7" Reel with 100 pieces 7" Reel with 250 pieces 13" Reel with 750 pieces Fully Assembled Evaluation Board Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT SOI RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS121001 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 6 RFAM2790 Absolute Maximum Ratings Parameter V+ DC Supply Over-Voltage (5 minutes) Rating Unit 14 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C 10 V Power Enable Voltage Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. Parameter Min. Specification Typ. Max. Unit Condition V+ = 12V; TMB = 30°C; ZS = ZL = 75; Attenuation = 0dB Overall Power Gain 27.0 Slope[1] dB f = 45MHz 26.0 27.0 28.0 dB f = 1003MHz -0.5 0.0 1.0 dB f = 45MHz to 1003MHz 0.5 1.0 dB f = 45MHz to 1003MHz (Peak to Valley) f = 45MHz to 1003MHz Flatness of Frequency Response Input Return Loss 18 20 dB Output Return Loss 16 18 dB Noise Figure Total Current Consumption (DC) 4.0 5.0 dB 410.0 450.0 mA f = 50MHz to 1003MHz V+ = 12V; TMB = 30°C; ZS = ZL = 75; Attenuation = 0dB Distortion Adjacent Channel Power Ratio (ACPR); N = 4 contiguous 256QAM channels -58 dBc Channel Power = 58dBmV; Adjacent channel up to 750kHz from channel block edge -60 dBc Channel Power = 58dBmV; Adjacent channel (750kHz from channel block edge to 6MHz from channel block edge) -63 dBc Channel Power = 58dBmV; Next-adjacent channel (6MHz from channel block edge to 12MHz from channel block edge) -65 dBc Channel Power = 58dBmV; Third-adjacent channel (12MHz from channel block edge to 18MHz from channel block edge) 2nd Order Harmonic (HD2); N = 1 256QAM channel -63 dBc Channel Power = 66dBmV; In each of 2N contiguous 6MHz channels coinciding with 2nd harmonic components (up to 1000MHz); 3rd Order Harmonic (HD3); N = 1 256QAM channel -63 dBc Channel Power = 66dBmV; In each of 3N contiguous 6MHz channels coinciding with 3rd harmonic components (up to 1000MHz); VO = 46dBmV, flat, 79 analog channels plus 75 digital channels (-6dB offset)[2] CTB -67 dBc XMOD -60 dBc CSO -70 dBc CIN 64 dB 2 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS121001 RFAM2790 Parameter Min. Specification Typ. Unit Max. Attenuator Condition V+ = 12V; TMB = 30°C; ZS = ZL = 75 Attenuator Range 0 to 20 dB Attenuator Voltage 0V to 12V Power Enable/Disable Amp enabled Logic high (3.3V) applied to power enable pin[3] Amp disabled Logic low (0V) applied to power enable pin[4] [1] The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. [2] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +46dBmV flat output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. Composite second order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite triple beat (CTB) - The CTB parameter is defined by the NCTA. Cross modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. carrier to intermodulation noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). [3] Logic high is defined as power enable voltage >2V [4] Logic low is defined as power enable voltage <0.4V Application Circuit FB1 Bead 60 V+ D3 TGL34-33A R1 10k Power Enable C3 4.7nF C8 4.7nF D2 MM3Z5V6T1 Att. Adjust C9 4.7nF GND 1 9 2 8 T1 RFXF0006 T2 RFXF0008 3 C2 4.7nF C4 4.7nF U1 RFAM2790 7 6 T3 RFXF0009 C5 4.7nF C6 4.7nF RF INPUT RF OUTPUT 4 C1 DNI DS121001 D1 TQP200002 25V 5 D4 TQP200002 25V 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. C7 DNI 3 of 6 RFAM2790 Evaluation Board Layout Component Chart Designator Comments 1 C1 optional, to improve matching in application 4.7nF 7 C2, C3, C4, C5, C6, C8, C9 Capacitor DNI 1 C7 Resistor 10k 1 R1 Chip Bead 60 at 100MHz 1 FB1 ESD Protection Diode TQP200002 2 D1, D4 Zener Voltage Diode MM3Z5V6T1G 1 D2 Transient Voltage Suppressor Diode TGL34-33A 1 D3 Transformer RFXF0006 1 T1 Transformer RFXF0008 1 T2 Transformer RFXF0009 1 T3 DUT RFAM2790 1 U1 4 of 6 Component Type Value Qty Evaluation Board RFAM2790PCBA-410 1 Capacitor DNI Capacitor 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. optional, to improve matching in application DS121001 RFAM2790 Pin Names and Descriptions Pin 1 2 3 4 5 6 7 8 9 Name Description Logic Level (3.3V) Power Enable Control POWER ENABLE ATTENUATOR Voltage Adjustable Attenuator ADJUST RF AMP Positive Input RF IN + RF AMP Negative Input RF IN RF AMP Negative Output RF OUT 12V Output DC OUT RF AMP Positive Output RF OUT + Supply Voltage 5.6V V2+ Supply Voltage 12V V1+ Pin Configuration POWER ENABLE 1 9 V1 + ATTENUATOR ADJUST 2 8 V2 + RF IN + 3 7 RF OUT + 6 DC OUT 5 RF OUT - RF IN - DS121001 4 GND 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 6 RFAM2790 Package Drawing Dimensions in millimeters PCB Metal Land Pattern Dimensions in millimeters 6 of 6 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS121001