RFPP3870 RFPP3870 GaAs/GaN Push Pull Hybrid 45MHz to 1218MHz Package: SOT-115J The RFPP3870 is a Hybrid Push Pull amplifier module. The part employs GaAs HFET die, GaAs pHemt die and GaN HEMT die and operates from 45MHz to 1218MHz. It provides excellent linearity and superior return loss performance with low noise and optimal reliability. Features V+ INPUT OUTPUT ■ Excellent Linearity ■ Superior Return Loss Performance ■ Extremely Low Distortion ■ Optimal Reliability ■ Low Noise ■ Unconditionally Stable Under All Terminations ■ 28.0dB Min. Gain at 1218MHz ■ 270mA Max. at 24VDC Applications ■ 45MHz to 1218MHz CATV Amplifier Systems Ordering Information RFPP3870 Box with 50 pieces Absolute Maximum Ratings Parameter Rating Unit RF Input Voltage (single tone) 75 dBmV DC Supply Over-Voltage (5 minutes) 30 V Storage Temperature -40 to +100 °C Operating Mounting Base Temperature -30 to +100 °C Caution! ESD sensitive device. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2011/65/EU. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. ® DS141010 ® RF MICRO DEVICES and RFMD are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc. 1 of 3 RFPP3870 Nominal Operating Parameters Specification Parameter Unit Min Typ Condition Max V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω General Performance 27.0 dB f = 45MHz Power Gain [1] Slope 28.0 28.5 29.5 dB f = 1218MHz 1.0 1.5 2.5 dB f = 45MHz to 1218MHz 0.8 dB f = 45MHz to 1218MHz -20 dB f = 45MHz to 320MHz -19 dB f = 320MHz to 640MHz -18 dB f = 640MHz to 870MHz -17 dB f = 870MHz to 1000MHz -16 dB f = 1000MHz to 1218MHz -20 dB f = 45MHz to 320MHz -19 dB f = 320MHz to 640MHz -18 dB f = 640MHz to 870MHz -17 dB f = 870MHz to 1000MHz -16 dB f = 1000MHz to 1218MHz f = 50MHz to 1218MHz Flatness of Frequency Response Input Return Loss Output Return Loss Noise Figure Total Current Consumption (DC) 4.6 5.5 dB 260.0 270.0 mA V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω Distortion Data 40MHz to 550MHz CTB -72 -66 dBc XMOD -63 -60 dBc CSO -78 -70 dBc CIN 67 69 VO = 46dBmV, flat, 79 analog channels plus 75 digital channels (-6dB offset)[2][4] dB V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω Distortion Data 40MHz to 550MHz CTB -72 dBc XMOD -65 dBc CSO -76 dBc CIN 70 dB VO = 45dBmV, flat, 79 analog channels plus 111 digital channels (-6dB offset)[3][4] 1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +46dBmV flat output level, plus 75 digital channels, -6dB offset relative to the equivalent analog carrier. 3. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +45dBmV flat output level, plus 111 digital channels, -6dB offset relative to the equivalent analog carrier. 4. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise). RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141010 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 RFPP3870 Package Drawing (Dimensions in millimeters) I U 123 5 7 89 C E J S P R M K O T Q øG N D 0 B 5 10mm scale H L F A Notes: European Projection Pinning: Pin Name 1 Input 2-3 GND 4 5 +VB 6 Nominal Min Max A 44,6 ± 0,2 44,4 44,8 B 13,6 ± 0,2 13,4 44,4 13,8 C 20,4 ± 0,5 19,9 20,9 D 8 ± 0,15 7,85 8,15 E 12,6 ± 0,15 12,45 12,75 F 38,1 ± 0,2 37,9 38,3 G 4 +0,2 / -0,05 3,95 4,2 H 4 ± 0,2 3,8 4,2 I 25,4 ± 0,2 25,2 25,6 J UNC 6-32 - - K 4,2 ± 0,2 4,0 4,4 L 27,2 ± 0,2 27,0 27,4 M 11,6 ± 0,5 11,1 12,1 N 5,8 ± 0,4 5,4 6,2 O 0,25 ± 0,02 0,23 0,27 P 0,45 ± 0,03 0,42 0,48 Q 2,54 ± 0,3 2,24 2,84 R 2,54 ± 0,5 2,04 3,04 S 2,54 ± 0,25 2,29 2,79 7-8 GND T 5,08 ± 0,25 4,83 5,33 9 Output U 5,08 ± 0,25 4,83 5,33 RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected]. DS141010 The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3