Product Bulletin JANTX, JANTXV, 2N5796U September 1996 Surface Mount Dual PNP Transistor Type JANTX, JANTXV, 2N5796U .058 (1.47) Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted) • Ceramic surface mount package • Hermetically sealed • Miniature package minimizes circuit Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Emitter-Base Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 V Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mA Operating and Storage (TJ, Tstg) . . . . . . . . . . . . . . . . . . . . . . . . . . . -65o C to +200o C Power Dissipation (single transistor, no heat sink) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W Power Dissipation (total device) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W board area required • Electrical performance similar to dual 2N2907A • Qualification per MIL-PRF-19500/496 Description The JANTX2N5796U is a hermetically sealed, ceramic surface-mount device, consisting of two individual silicon PNP transistors. The six pin ceramic package is ideal for designs where board space and device weight are important design considerations. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is VCB = 30 V, PD = 300 mW each transistor, TA = 25o C. Refer to MIL-PRF-19500/496 for complete requirements. When ordering parts without processing, do not use a JAN prefix. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 15-16 (972) 323-2200 Fax (972) 323-2396 Type JANTX, JANTXV, 2N5796U Electrical Characterics (TA = 25o C unless otherwise noted) SYMBOL PARAMETER MIN MAX UNIT TEST CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage 75 V IC = 10 µA V(BR)CEO Collector-Emitter Breakdown Voltage 60 V IC = 10 mA(1) V(BR)EBO Emitter-Base Breakdown Voltage 5 V IE = 10 µA ICBO1 Collector-Base Cutoff Current 10 nA VCB = 50 V ICBO2 Collector-Base Cutoff Current 10 µA VBC = 50 V, TA = 150o C IEBO Emitter-Base Cutoff Current 100 nA VEB = 3 V hFE1 Forward Current Transfer Ratio 75 VCE = 10 V, IC = 100 µA hFE2 Forward Current Transfer Ratio 100 VCE = 10 V, IC = 1.0 mA hFE3 Forward Current Transfer Ratio 100 VCE = 10 V, IC = 10 mA(1) hFE4 Forward Current Transfer Ratio 100 hFE7 Forward Current Transfer Ratio 40 VCE = 10 V, IC = 150 mA, TA = -55o C(1) hFE5 Forward Current Transfer Ratio 50 VCE = 10 V, IC = 300 mA(1) hFE6 Forward Current Transfer Ratio 50 VCE = 1.0 V, IC = 150 mA(1) VCE = 10 V, IC = 150 mA(1) 300 VCE(SAT)1 Collector-Emitter Saturation Voltage 0.4 V IC = 150 mA, IB = 15 mA(1) VCE(SAT)2 Collector-Emitter Saturation Voltage 1.6 V IC = 500 mA, IB = 50 mA(1) VBE(SAT)1 Base-Emitter Saturation Voltage 1.3 V IC = 150 mA, IB = 15 mA(1) VBE(SAT)2 Base-Emitter Saturation Voltage 2.6 V IC = 500 mA, IB = 50 mA(1) hfe Magnitude of Small-Signal Short-Circuit Forward Current Transfer Ratio Cobo Open Circuit Output Capacitance 8 pF VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz Cibo Input Capacitance 25 pF VEB = 2.0 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz Turn-On Time 50 ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA 140 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA, PW = 200 ns ton toff 2 Turn-Off Time VCE = 20 V, IC = 20 mA, f = 100 MHz 10 (1) Pulsed Test: Pulse Width = 300 µs ±50, 1-2 % Duty Cycle. Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396 15-17