2SD1782K Transistors Power Transistor (80V, 0.5A) 2SD1782K zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) 2) High VCEO, VCEO=80V 3) Complements the 2SB1198K. 2.9±0.2 1.1+0.2 −0.1 1.9±0.2 0.8±0.1 0.95 0.95 (2) 0~0.1 2.8±0.2 1.6+0.2 −0.1 (1) 0.4 +0.1 −0.05 zStructure Epitaxial planar type NPN silicon transistor +0.1 0.15 −0.06 0.3~0.6 (3) All terminals have same dimensions ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol : AJ∗ (1) Emitter (2) Base (3) Collector ∗ Denotes hFE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 0.5 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Rev.A 1/3 2SD1782K Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 80 − − V IC=50µA Collector-emitter breakdown voltage BVCEO 80 − − V IC=2mA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA ICBO − − 0.5 µA VCB=50V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage IEBO − − 0.5 µA VEB=4V VCE(sat) − 0.2 0.5 V IC/IB=500mA/50mA hFE 120 − 390 − Transition frequency fT − 120 − MHz Output capacitance Cob − 7.5 − pF DC current transfer ratio zPackaging specifications and hFE hFE 2SD1782K QR VCB=10V, IE=0A, f=1MHz hFE values are classified as follows : Taping Item Q R Code T146 hFE 120 to 270 180 to 390 Basic ordering unit (pieces) 3000 Package Type VCE=3V, IC=100mA VCE=10V, IE= −50mA, f=100MHz zElectrical characteristic curves 200 Ta=100°C 25°C −25°C 100 50 20 10 5 4.5mA 4.0mA 3.5mA 3.0mA 0.4 2.5mA 2.0mA 5.0mA Ta=25°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics VCE=3V 500 0.3 1.5mA 1.0mA 0.2 0.5mA 0.1 Ta=100°C 25°C −25°C 200 100 50 20 2 1 0 1000 DC CURRENT GAIN : hFE 0.5 VCE=3V COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 500 0 0 0.4 0.8 1.2 IB=0mA 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics 10 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current Rev.A 2/3 2SD1782K 500 200 100 IC/IB=50 50 20 10 20 10 1 2 5 10 20 50 100 200 5001000 1000 500 200 20 10 1 1000 lC/lB=50 500 200 Ta=100°C 25°C −25°C 100 50 20 10 1 2 5 10 20 50 100 200 5001000 Fig.5 Collector-emitter saturation voltage vs. collector current ( ) 5 10 20 50 100 200 5001000 Collector-emitter saturation voltage vs. collector current ( ) 1000 500 Ta=25°C VCE=10V 200 100 50 20 10 −1 −2 −5 −10 −20 −50 −100−200 −500−1000 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Fig.7 2 lC/lB=20 500 200 Ta=100°C 25°C −25°C 100 50 20 10 1 2 Fig.8 Gain bandwidth product vs. emitter current 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Collector-emitter saturation voltage vs. collector current ( ) Ta=100°C 25°C −25°C 50 COLLECTOR CURRENT : IC (mA) Fig.4 1000 lC/lB=10 100 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Ta=25°C Fig.6 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors Collector-emitter saturation voltage vs. collector current ( ) 1000 Ta=25°C f=1MHz IE=0A IC=0A 500 200 Cib 100 50 20 Cob 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1