MJF18004 - Savantic

SavantIC Semiconductor
Product Specification
MJF18004
Silicon NPN Power Transistors
DESCRIPTION
With TO-220F package
·High voltage ,high speed
·
APPLICATIONS
·Designed for use in 220V line-operated
switchmode power supplies and electronic
light ballasts
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1000
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
9
V
IC
Collector current (DC)
5
A
ICM
Collector current-Peak
10
A
IB
Base current
2
A
IBM
Base current-Peak
4
A
PD
Total power dissipation
40
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction to case
3.12
/W
Rth j-A
Thermal resistance junction to ambient
62.5
/W
SavantIC Semiconductor
Product Specification
MJF18004
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; L=25mH
VCE(sat)-1
Collector-emitter saturation voltage
IC=1A ;IB=0.1A
TC=125
0.5
0.6
V
VCE(sat)-2
Collector-emitter saturation voltage
IC=2A ;IB=0.4A
TC=125
0.45
0.8
V
VCE(sat)-3
Collector-emitter saturation voltage
IC=2.5A ;IB=0.5A
0.75
V
VBE(sat)-1
Base-emitter saturation voltage
IC=1A ;IB=0.1A
1.1
V
VBE(sat)-2
Base-emitter saturation voltage
IC=2A ;IB=0.4A
1.25
V
VBE(sat)-3
Base-emitter saturation voltage
IC=2.5A ;IB=0.5A
1.3
V
ICES
Collector cut-off current
CONDITIONS
MIN
TYP.
MAX
450
UNIT
V
0.1
VCES=RatedVCES;
VEB=0
0.5
mA
TC=125
VCES=800V
0.1
ICEO
Collector cut-off current
VCE=RatedVCEO; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=2.5V
12
hFE-2
DC current gain
IC=1A ; VCE=5V
14
hFE-3
DC current gain
IC=2A ; VCE=1V
6
hFE-4
DC current gain
IC=5mA ; VCE=5V
10
Transition frequency
IC=0.5A ; VCE=10V;f=1.0MHz
13
MHz
Collector outoput capacitance
IE=0 ; VCB=10V;f=1.0MHz
45
pF
fT
COB
36
Switching times resistive load,Duty CycleC10%,Pulse Width=20µs
ton
Turn-on time
ts
Storage time
tf
Fall time
VCC=250V ,IC=2.5A
IB1=0.5A; IB2=0.5A
2
0.6
µs
3.0
µs
0.4
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
MJF18004