SDP04N60 SDF04N60

SDP04N60
SDF04N60
S a mHop Microelectronics C orp.
Ver 2.2
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Typ
600V
4A
2.0 @ VGS=10V
Rugged and reliable.
TO-220 and TO-220F Package.
D
SDF SERIES
TO-220F
SDP SERIES
TO-220
ORDERING INFORMATION
Ordering Code
Package
SDP04N60HZ
G
G D S
G D S
Marking Code
SDP04N60
TO-220
S
RoHS Status
Halogen Free
Delivery Mode
Tube
SDP04N60PZ
TO-220
04N60
Tube
Pb Free
SDF04N60HZ
TO-220F
SDF04N60
Tube
Halogen Free
SDF04N60PZ
TO-220F
04N60
Tube
Pb Free
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
TC=25°C
TC=100°C
a
a
E AS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
SDP04N60 SDF04N60
600
±30
±30
4
4
2.8
12
c
A
12
A
mJ
88
29
W
44
14.7
W
-55 to 175
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.7
62.5
Details are subject to change without notice.
A
2.8
90
TC=25°C
TC=100°C
Units
V
V
5.1
62.5
°C
°C/W
°C/W
Dec,24,2013
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SDP04N60
SDF04N60
Ver 2.2
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
Drain-Source On-State Resistance
RDS(ON)
gFS
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
600
Typ
VGS= ±30V , VDS=0V
2
Units
1
±100
uA
nA
4
2.5
V
ohm
V
VDS=480V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=2A
Max
3
2.0
VDS=20V , ID=2A
2.5
S
VDS=25V,VGS=0V
f=1.0MHz
500
57
14
pF
pF
pF
20
ns
17
ns
24
ns
11
ns
11.5
nC
2
nC
5.3
nC
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VDS=300V,ID=1A,VGS=10V
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=300V,ID=1A,
VGS=10V
VDD=300V
ID=1A
VGS=10V
RGEN= 6 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.765
1.4
V
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Dec,24,2013
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SDP04N60
SDF04N60
Ver 2.2
3.5
I D , Drain C urrent (A)
ID , Drain C urrent(A)
6.0
VG S = 10V
4.8
3.6
VG S = 6V
2.4
VG S = 5V
1.2
1.4
8
6
4
2
10
0
12
1.2
2.4
3.6
4.8
7.2
6.0
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
3.0
R DS (ON) , On-R es is tance
6
5
4
3
V G S =10V
2
1
0
0.1
2.6
V G S =10V
I D =2A
2.2
1.8
1.4
1.0
0
2.4
1.2
3.6
4.8
0
6.0
B V DS S , Normalized
Drain-S ource B reakdown V oltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
-25
0
25
50
75
100
125
150
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
1.6
0.2
-50
50
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
1.4
25
T j( C )
I D , Drain C urrent (A)
V th, Normalized
G ate-S ource T hres hold V oltage
25 C
-55 C
0
0
Ω)
T j=125 C
2.1
0.7
0
R DS (on) (
2.8
75 100 125 150
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
Dec,24,2013
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SDP04N60
SDF04N60
Ver 2.2
20.0
6
I D = 2A
4
Is , S ource-drain current (A)
R DS (on) ( Ω )
5
125 C
3
75 C
2
25 C
1
0
0
2
4
6
8
125 C
10.0
5.0
75 C
1.0
10
25 C
0
V G S , G ate- S ource Voltage (V )
0.9
1.2
1.5
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
V G S , G ate to S ource V oltage (V )
1200
1000
C , C apacitance (pF )
0.6
V S D , B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs .
G ate-S ource V oltage
800
600
C is s
400
C os s
200
V DS =300V
I D = 1A
8
6
4
2
C rs s
0
0
10
20
40
30
0
50
0
V DS , Drain-to S ource Voltage (V )
10
12
14
16
N)
(O
s
1
ms
DC
0.01
us
s
10
VGS=10V
Single Pulse
TC=25 C
Lim
it
10
0u
1m
0.1
10
S
S
8
RD
s
RD
s
ms
10 C
D
1
6
10
0u
1m
(O
N)
Lim
10
4
F igure 10. G ate C harge
I D , Drain C urrent (A)
it
10
2
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
I D , Drain C urrent (A)
0.3
0.1
VGS=10V
Single Pulse
TC=25 C
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-S ource V oltage (V )
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for SDF04N60
Figure 11a. Maximum Safe Operating
Area for SDP04N60
Dec,24,2013
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SDP04N60
SDF04N60
Ver 2.2
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
0.0 1
tp
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 12a.
F igure 12b.
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
0.02
t2
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
0.1
1
10
Square Wave Pulse Duration (msec)
Figure 13a. Normalized Thermal Transient Impedance Curve for SDP04N60
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.05
0.1
P DM
0.02
t1
0.01
t2
S ingle P uls e
0.01
0.00001
0.0001
1.
2.
3.
4.
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
S quare Wave P uls e Duration (ms ec)
Figure 13b. Normalized Thermal Transient Impedance Curve for SDF04N60
Dec,24,2013
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SDP04N60
SDF04N60
Ver 2.2
Dec,24,2013
6
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SDP04N60
SDF04N60
Ver 2.2
TO-220F
A1
E
Q1
žP
A3
Q
D1
D
L2
L1
b1x3
L
bx3
c
e
SYMBOL
A
A1
A2
A3
b
b1
c
D
D1
E
E1
e
L
L1
L2
Q
Q1
žP
E1
A
A2
MILLIMETERS
MAX
MIN
4.90
4.50
2.35
2.75
2.15
2.92
0.50
0.65
0.90
0.70
1.55
1.15
0.70
0.45
16.30
15.30
6.67
6.77
9.90
10.32
9.20
9.40
2.54 REF.
9.45
10.05
2.79
3.60
15.60
16.00
3.40
3.20
7.10
6.90
3.55
2.90
Dec,24,2013
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SDP04N60
SDF04N60
Ver 2.2
TO-220 Tube
Dec,24,2013
8
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SDP04N60
SDF04N60
Ver 2.2
F Tube
Dec,24,2013
9
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SDP04N60
SDF04N60
Ver 2.2
TOP MARKING DEFINITION
TO-220 (Halogen Free)
SamHop Logo
SDP04N60
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot Number
TO-220 (Pb Free)
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
04N60
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
10
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SDP04N60
SDF04N60
Ver 2.2
TOP MARKING DEFINITION
TO-220F (Halogen Free)
SamHop Logo
SDF04N60
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
TO-220F (Pb Free)
Wafer Lot Number
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
04N60
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
11
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