SDP07N65 SDF07N65 S a mHop Microelectronics C orp. Ver 3.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 650V 7A 1.2 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D G G D S G D S SDF SERIES TO-220F SDP SERIES TO-220 ORDERING INFORMATION Ordering Code Package S Tube RoHS Status Halogen Free Tube Pb Free SDF07N65 Tube Halogen Free 07N65 Tube Pb Free SDP07N65HZ TO-220 Marking Code SDP07N65 SDP07N65PZ TO-220 07N65 SDF07N65HZ TO-220F SDF07N65PZ TO-220F Delivery Mode ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM -Pulsed SDP07N65 SDF07N65 650 ±30 ±30 TC=25°C TC=70°C a a E AS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range 7 7 A 5.9 5.9 A 21 c 21 133 66 W 93 46 W -55 to 175 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.1 62.5 Details are subject to change without notice. A mJ 422 TC=25°C TC=70°C Units V V 2.2 62.5 °C °C/W °C/W Dec,24,2013 1 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage Drain-Source On-State Resistance RDS(ON) gFS Forward Transconductance Conditions Min VGS=0V , ID=250uA 650 Typ VGS= ±30V , VDS=0V VDS=20V , ID=3.5A 2 Units 1 ±100 uA nA 4 1.4 V ohm V VDS=520V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=3.5A Max 3 1.2 5.5 S b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS VDS=25V,VGS=0V f=1.0MHz 1025 110 13 pF pF pF 40 ns 21 ns 53 ns 23 ns b tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VDS=325V,ID=1A,VGS=10V 21 nC Qgs Gate-Source Charge 3.6 nC Qgd Gate-Drain Charge VDS=325V,ID=1A, VGS=10V 8 nC VDD=325V ID=1A VGS=10V RGEN= 6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=2A 0.78 1.4 V Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=5mH,VDD = 100V.(See Figure12) Dec,24,2013 2 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 5 15 VGS = 7V ID, Drain Current(A) I D, Drain Current(A) VGS = 10V 12 VGS = 6V 9 6 VGS = 5V 3 0 0 5 15 10 25 20 4 Tj = 125 C 3 -55 C 2 25 C 1 0 30 0 VDS, Drain-to-Source Voltage(V) 3.0 2.5 2.6 R DS(on), On-Resistance Normalized R DS(on)( Ω) 3.0 2.0 VGS = 10V 1.0 0.5 0.0 3.6 4.8 6.0 7.2 VGS = 10V ID = 3.5A 2.2 1.8 1.4 1.0 0 1 3 6 9 12 0 15 BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 VDS = VGS ID = 250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j( C ) Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.4 25 Tj, Junction Temperature(° C ) I D, Drain Current(A) Vth, Normalized Gate-Source Threshold Voltage 2.4 Figure 2. Transfer Characteristics Figure 1. Output Characteristics 1.5 1.2 V GS, Gate-to-Source Voltage(V) 75 100 125 150 1.15 ID = 250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Dec,24,2013 3 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 20.0 3.0 Is, Source-drain current(A) VGS = 3.5V R DS(on)(Ω) 2.5 2.0 125 C 1.5 75 C 1.0 25 C 0.5 0 0 2 4 6 8 10.0 5.0 25 C 1.0 10 0 V GS, Gate-to-Source Voltage(V) 0.6 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 1800 1500 C, Capacitance(pF) 0.3 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Ciss 900 600 Coss Crss 300 0 20 10 40 30 50 VDS = 325V ID = 1A 8 6 4 2 0 0 0 VDS, Drain-to-Source Voltage(V) 0.1 1 100 18 Lim S (O N) 1m DC 21 24 s 10 0u us s 1 VGS=10V Single Pulse TC=25 C 0.1 0.1 1000 10 it 10 0.03 10 15 RD Lim S VGS=10V Single Pulse TC=25 C 0.03 12 ms 1 0.1 9 10 RD us s ms DC s 10 0u 10 (O N) 1m 6 Figure 10. Gate Charge I D , Drain C urrent (A) 10 it 10 3 Qg, Total Gate Charge(nC) Figure 9. Capacitance I D , Drain C urrent (A) 75 C 125 C 1 10 100 1000 V DS , Drain-S ource V oltage (V ) V DS , Drain-S ource V oltage (V ) Figure 11b. Maximum Safe Operating Area for SDF07N65 Figure 11a. Maximum Safe Operating Area for SDP07N65 Dec,24,2013 4 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 12a. F igure 12b. r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration (msec) Figure 13a. Normalized Thermal Transient Impedance Curve for SDP07N65 r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.05 0.1 P DM 0.02 t1 0.01 t2 S ingle P uls e 0.01 0.00001 0.0001 1. 2. 3. 4. 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 S quare Wave P uls e Duration (ms ec) Figure 13b. Normalized Thermal Transient Impedance Curve for SDF07N65 Dec,24,2013 5 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 Dec,24,2013 6 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 TO-220F A1 E Q1 P A3 Q D1 D L2 L1 b1x3 L bx3 c e SYMBOL A A1 A2 A3 b b1 c D D1 E E1 e L L1 L2 Q Q1 P E1 A A2 MILLIMETERS MAX MIN 4.90 4.50 2.35 2.75 2.15 2.92 0.50 0.65 0.90 0.70 1.55 1.15 0.70 0.45 16.30 15.30 6.67 6.77 9.90 10.32 9.20 9.40 2.54 REF. 9.45 10.05 2.79 3.60 15.60 16.00 3.40 3.20 7.10 6.90 3.55 2.90 Dec,24,2013 7 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 TO-220 Tube Dec,24,2013 8 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 F Tube Dec,24,2013 9 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 TOP MARKING DEFINITION TO-220 (Halogen Free) SamHop Logo SDP07N65 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot Number TO-220 (Pb Free) Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 07N65 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 10 www.samhop.com.tw SDP07N65 SDF07N65 Ver 3.0 TOP MARKING DEFINITION TO-220F (Halogen Free) SamHop Logo SDF07N65 XXXXXX Product No. SMC internal code No. (A,B,C...Z) TO-220F (Pb Free) Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 07N65 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 11 www.samhop.com.tw