Green Product SDU/D03N04 S a mHop Microelectronics C orp. Ver 1.3 N-Channel Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Typ 400V 2A 3.2 @ VGS=10V Rugged and reliable. Suface Mount Package. D G D G S SDU SERIES TO-252(D-PAK) G D S SDD SERIES TO-251S(I-PAK) ORDERING INFORMATION Ordering Code Package S SDD SERIES TO-251L(I-PAK) RoHS Status Halogen Free SDU03N04HZ TO-252 Marking Code SDU03N04 SDD03N04HS TO-251S SDD03N04 Tube Halogen Free SDD03N04HL TO-251L SDD03N04 Tube Halogen Free Delivery Mode Reel ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM EAS PD TJ, TSTG -Pulsed a Limit 400 ±30 Units V V TA=25°C 2 A TA=70°C 1.5 A 6 A 10.4 mJ 42 W 27 W -55 to 150 °C 3 °C/W 50 °C/W b Single Pulse Avalanche Energy d Maximum Power Dissipation TA=25°C TA=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Dec,24,2013 1 www.samhop.com.tw SDU/D03N04 Ver 1.3 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Min VGS=0V , ID=250uA 400 Typ VGS= ±30V , VDS=0V Drain-Source On-State Resistance Forward Transconductance VDS=10V , ID=1A 2 Max Units 1 ±100 uA V VDS=320V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=1A DYNAMIC CHARACTERISTICS CISS COSS CRSS Conditions 3 3.2 0.9 4 3.8 nA V ohm S c Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS VDS=25V,VGS=0V f=1.0MHz 185 31 6.1 pF pF pF 13.4 ns 12.2 ns 21.5 ns 5.6 ns c tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VDS=200V,ID=1A,VGS=10V 4.36 nC Qgs Qgd Gate-Source Charge VDS=200V,ID=1A, VGS=10V 1.28 nC Gate-Drain Charge 1.48 nC VDD=200V ID=1A VGS=10V RGEN=25 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage VGS=0V,IS=1A 0.81 1 A 1.4 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1mH,RG=25Ω,VDD = 50V.(See Figure12) Dec,24,2013 2 www.samhop.com.tw SDU/D03N04 Ver 1.3 1.0 4.0 VGS = 10V 3.5 ID, Drain Current(A) ID, Drain Current(A) 0.8 3.0 VGS = 6V 2.5 2.0 1.5 VGS = 5V 1.0 Tj=125 C 0.6 0.4 -55 C 25 C 0.2 0.5 0 0 15 10 5 0 20 25 30 0 Figure 1. Output Characteristics 6 2.2 RDS(ON), On-Resistance Normalized 2.5 R DS(on)( Ω) 5 VGS = 10V 4 3 6 V G S =10V I D = 1A 1.9 1.6 1.3 1.0 2 0 0.7 1.4 2.1 2.8 0.7 3.5 0 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 100 125 150 Tj, Junction Temperature ( C) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 75 Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 50 25 Tj( C) ID, Drain Current (A) Vth, Normalized Gate-Source Threshold Voltage 5 Figure 2. Transfer Characteristics 7 0.5 4 3 VGS, Gate-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 1 2 1 75 100 125 150 Tj, Junction Temperature ( C) 1.3 I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Dec,24,2013 3 www.samhop.com.tw SDU/D03N04 Ver 1.3 9.0 20.0 I D =1A Is, Source-drain current (A) 7.5 RDS(on)( Ω) 6.0 4.5 125 C 3.0 75 C 25 C 1.5 0 2 4 6 8 125 C 1.0 10 25 C 0 0.4 0.8 1.2 1.6 2.0 V GS, Gate-Sorce Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage (V) 240 200 C, Capacitance (pF) 5.0 75 C 0 Ciss 160 120 80 Coss 40 Crss 0 20 10 4 2 50 0 2 4 6 8 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge RD S ( ) ON L im 1m it 10 DC 0.1 0.001 0.1 6 VDS, Drain-to Source Voltage(V) 1 0.01 40 30 V DS = 200V I D =1A 8 0 0 ID, Drain Current (A) 10.0 1 10 s s 10 0m 10 s ms s VGS=10V Single Pulse TA=25 C 1 10 100 1000 VDS, Drain-Source Voltage (V) Figure 11. Maximum Safe Operating Area Dec,24,2013 4 www.samhop.com.tw SDU/D03N04 Ver 1.3 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Dec,24,2013 5 www.samhop.com.tw SDU/D03N04 Ver 1.3 TO-252 E E1 b3 L3 D1 D H 3 2 1 L4 b b2 e A SYMBOLS c2 A A1 b b2 b3 c c2 D D1 e E E1 H L L1 L2 L3 L4 DETAIL "A" c L2 L L1 A1 MILLIMETERS MIN MAX 2.380 2.200 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.380 5.210 2.286 BSC 6.400 6.731 4.318 4.900 9.400 10.400 1.400 1.770 2.743 REF 0.508 BSC 1.270 0.890 0.640 1.010 10 ° 0° DETAIL "A" Dec,24,2013 6 www.samhop.com.tw SDU/D03N04 Ver 1.3 PACKAGE OUTLINE DIMENSIONS TO-251S A E b3 c2 D1 E1 D H 1 2 3 b2 L4 L5 L b e b4 SYMBOL c MILLIMETERS MIN MAX E 6.350 6.731 L 3.700 4.400 L4 0.698 REF L5 0.972 1.226 D 5.970 9.670 6.223 11.450 0.630 0.850 0.760 4.950 1.140 0.450 0.550 H b b2 b3 b4 e A c c2 D1 E1 5.460 2.286 BSC 2.390 2.180 0.400 0.610 0.400 0.610 5.100 4.318 Dec,24,2013 7 www.samhop.com.tw SDU/D03N04 Ver 1.3 PACKAGE OUTLINE DIMENSIONS TO-251L A E A1 A2 C B D b3 L1 b2 b4 L e SYMBOL A A1 A2 B L1 L D C C1 E1 E b1 b2 b3 b4 e C1 b1 MIN 6.40 5.30 4.30 1.35 7.40 5.40 0.55 0.49 1.72 2.20 0.60 0.70 E1 MILLIMETERS NOM 6.50 5.40 4.40 1.50 1.55 REF 7.70 5.55 0.60 0.54 1.77 2.30 MAX 6.60 5.50 4.50 1.65 8.00 5.70 0.65 0.59 1.82 2.40 0.75 0.85 0.80 0.90 2.30 Dec,24,2013 8 www.samhop.com.tw SDU/D03N04 Ver 1.3 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Dec,24,2013 9 www.samhop.com.tw SDU/D03N04 Ver 1.3 TOP MARKING DEFINITION TO-252 SamHop Logo SDU03N04 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) Dec,24,2013 10 www.samhop.com.tw SDU/D03N04 Ver 1.3 TOP MARKING DEFINITION TO-251S SDD03N04 XXXXXX SMC internal code No. (A,B,C...Z) Wafer Lot No. Production Date (1,2 ~ 9, A,B.....) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A.....) TO-251L SamHop Logo SDD03N04 XXXXXX Product No. Production Year (2009 = 9, 2010 = A.....) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B.....) Wafer Lot No. SMC internal code No. (A,B,C...Z) Dec,24,2013 11 www.samhop.com.tw