S T U/D1955NL S amHop Microelectronics C orp. Arp,12 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 55 @ V G S = 10V 55V TO-252 and TO-251 P ackage. 10A 80 @ V G S = 4.5V D D G D G S S TU S E R IE S TO-252AA(D-P AK) S G S TD S E R IE S TO-251(l-P AK) S AB S OL UTE MAXIMUM R ATINGS P arameter Drain-S ource Voltage R ating (T A =25 C unles s otherwis e noted) S ymbol Limit Unit Vspike (d) 60 V Drain-S ource Voltage V DS 55 V Gate-S ource Voltage V GS 20 V 10 8 A A IDM 23 A IS 15 A 25 C a Drain C urrent-C ontinuous @ Ta -P ulsed ID 70 C b Drain-S ource Diode Forward C urrent a Ta= 25 C Maximum P ower Dissipation a 50 PD Ta=70 C Operating Junction and S torage Temperature R ange 35 T J , T S TG -55 to 175 W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase R JC 3 C /W Thermal R esistance, Junction-to-Ambient R JA 50 C /W S T U/D1955NL N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 44V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) OFF CHAR ACTE R IS TICS 55 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 3.0 V V GS =10V, ID = 8A 42 55 m ohm V GS =4.5V, ID= 4A 65 80 m ohm V DS = 5V, V GS = 10V ID(ON) gFS On-S tate Drain Current 1.9 V DS = 10V, ID = 8A 1.0 15 A 10 S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =30V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z 635 718 PF 75 87 PF 50 57 PF 2.6 ohm c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 10.6 13 ns 5.3 6 ns 14.5 17 ns 9.8 11 ns V DS =15V, ID =8A,V GS =10V 12.8 14 nC V DS =15V, ID =8A,V GS =5V 7.1 8 3 nC V DD = 30V ID = 8 A V GS = 10V R GE N = 6 ohm V DS =15V, ID = 8A V GS =10V 2 2.6 3.8 5 nC nC S T U/D1955NL E LE CTR ICAL CHAR ACTE R IS TICS (T C =25 C unless otherwise noted) Parameter Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Diode Forward Voltage 1 V GS = 0V, Is = 15A VSD 1.3 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max 20 20 V G S =6V V G S =8V V G S =10V V G S =5V 12 V G S =4.5V 8 V G S =4V 4 V G S =3V 0 15 I D , Drain C urrent (A) ID , Drain C urrent(A) 16 T j=125 C 10 0 0 0.5 1 1.5 2 3 2.5 0 V DS , Drain-to-S ource Voltage (V ) 1.8 0.9 2.7 3.6 4.5 5.4 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 1200 R DS (ON) , On-R es is tance Normalized 1.8 1000 C , C apacitance (pF ) -55 C 25 C 5 800 C is s 600 400 200 1.6 V G S =10V I D =8A 1.4 1.2 1.0 0.8 C os s C rs s 0 0 5 10 15 20 25 0.6 -55 30 -25 0 25 50 75 100 125 T j( C ) V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 100 125 150 0 25 50 100 125 150 75 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 18 Is , S ource-drain current (A) 15 12 9 6 3 10.0 1.0 0 0 5 10 15 0.4 20 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 10 V DS =30V I D =8A 8 I D , Drain C urrent (A) gF S , T rans conductance (S ) V DS =10V V G S , G ate to S ource V oltage (V ) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U/D1955NL 6 4 2 0 10 RD 3 6 9 12 15 18 Qg, T otal G ate C harge (nC ) it 10 10 0m ms s 1s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.1 21 24 ( L im 11 0.03 0 S ) ON 1 10 50 60 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T U/D1955NL V DD ton V IN D td(off) tf 90% 90% V OUT V OUT VG S R GE N toff tr td(on) RL 10% INVE R TE D 10% 6 G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 P DM 0.1 0.1 0.05 t1 t2 0.02 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 10 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T U/D1955NL TO-251 A E E2 C L D1 E1 1 H 2 B2 D2 D 3 L1 L2 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC 6 INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC S T U/D1955NL TO-252 E A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. 7 MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. S T U/D1955NL TO251 Tube/TO-252 Tape and R eel data T O-251 T ube " A" T O-252 C arrier T ape UNIT:р A0 B0 K0 6.80 ²0.1 10.3 ²0.1 2.50 ²0.1 PACKAGE TO-252 (16 р* D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 0.3² 1.75 0.1² 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 T O-252 R eel S UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 8 G R V