TDZ12 : Diodes

Zener Diode
TDZ series
Datasheet
lDimensions (Unit : mm)
lApplication
lLand size figure (Unit : mm)
Constant voltage control
1.1
0.17±0.1
0.05
2.0
1.3±0.05
lFeatures
3) Can be mounted automatically,
0.8 0.5
2) High reliability.
2.5±0.2
1.9±0.1
1) Small mold type. (TUMD2)
TUMD2
using chip mounter.
lStructure
Cathode
0.8±0.05
0.6±0.2
0.1
ROHM : TUMD2
dot (year week factory) + day
lConstruction
Silicon epitaxial planar
Anode
EX. TDZ5.1B
lTaping specifications (Unit : mm)
0.25±0.05
8.0±0.2
2.75
1.43±0.05
4.0±0.1
φ 1.0±0.2
1.0
 0.2
0
0
2.8±0.05
φ1.55
1.55±0.1
 0.1
0 0
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
0.9±0.08
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Power dissipation
P
500
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
Operating resistance
Topr
-55 to +150
°C
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1/6
2013.11 - Rev.D
Data Sheet
TDZ series
lElectrical characteristics (Ta= 25°C)
Symbol
Reverse current
:
IR(mA)
IZ(mA)
VR(V)
MIN.
MAX.
MAX.
TDZ 5.1
4.60
5.60
10
10
1.5
TDZ 5.6
5.10
6.10
10
10
2.5
TDZ 6.2
10
10
5.60
6.80
3.0
TDZ 6.8
10
10
6.20
7.40
3.5
TDZ 7.5
10
10
6.80
8.30
4.5
TDZ 8.2
10
10
7.40
9.00
4.9
TDZ 9.1
10
10
8.20
10.00
5.5
TDZ 10
10
10
9.00
11.00
6.0
TDZ 11
10
10
9.90
12.10
7.0
TDZ 12
10
10
10.80
13.20
8.0
TDZ 13
10
10
11.70
14.30
9.0
TDZ 15
10
10
13.50
16.50
10.0
TDZ 16
10
10
14.40
17.60
11.0
TDZ 18
10
10
16.20
19.80
12.0
TDZ 20
10
10
18.00
22.00
14.0
TDZ 22
10
10
19.80
24.20
15.0
TDZ 24
10
10
21.60
26.40
16.0
TDZ 27
10
10
24.30
29.70
19.0
27.00
33.00
21.0
TDZ 30
10
10
(1) The Zener voltage (Vz) is measured 40ms after power is supplied.
(2) The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
TYP.
Zener voltage : VZ(V)
lMARKING (TYPE NO.)
TYPE
TDZ 5.1
TDZ 5.6
TDZ 6.2
TDZ 6.8
TDZ 7.5
TDZ 8.2
TDZ 9.1
TDZ 10
TDZ 11
TDZ 12
TYPE NO.
A2
C2
E2
F2
H2
J2
L2
05
15
25
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TYPE
TDZ 13
TDZ 15
TDZ 16
TDZ 18
TDZ 20
TDZ 22
TDZ 24
TDZ 27
TDZ 30
2/6
TYPE NO.
35
45
55
65
75
85
95
A5
C5
2013.11 - Rev.D
Data Sheet
TDZ series
lElectrical characteristic curves
10
ZENER CURRENT : IZ(mA)
1
0.1
8.2
7.5
6.8
16
6.2
0.01
5.6
5.1
0.001
11
15
10
13
5
22
24
27
18
30
12
9.1
0
20
10
15
20
25
30
35
40
ZENER VOLTAGE : VZ(V)
VZ -IZ CHARACTERISTICS
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3/6
2013.11 - Rev.D
Data Sheet
TDZ series
lElectrical characteristic curves
10000
500
REVERS SURGE MAXIMUM
POWER : PRSM(W)
POWER DISPERSION : Pd(mW)
600
400
300
200
100
0
0
25
50
75
100
125
t
100
10
1
0.001
150
30
0.08
25
20
0.06
15
0.04
10
0.02
5
0
0
5
10
15
20
25
30
35
-5
TEMP.COEFFICIENCE : γZ(mV/°C)
TRANSIENT THERMAL IMPEDANCE : Rth(°C/W)
TEMP.COEFFICIENCE : γZ(%/°C)
0.1
0
ZENER VOLTAGE : VZ(V)
γZ -VZ CHARACTERISTICS
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0.01
0.1
1
10
TIME : t(ms)
PRSM-TIME CHARACTERISTICS
AMBIENT TEMPERATURE : Ta(°C)
Pd-Ta CHARACTERISTICS
-0.02
PRSM
1000
1000
Mounted on glass epoxy board
IM=10mA
IF=0.5A
time
1ms 300ms
Rth(j-a)
100
10
0.001
Rth(j-c)
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
4/6
2013.11 - Rev.D
Data Sheet
TDZ12
lElectrical characteristic curves
1000
REVERSE CURRENT : IR(nA)
ZENER CURRENT : IZ(mA)
10
1
0.1
Ta = 25°C
0.01
0.001
Ta = 125°C
Ta = -25°C
Ta = 75°C
10
11
12
13
100
Ta = 75°C
10
1
Ta = 25°C
0.1
Ta = -25°C
0.01
0.001
14
Ta = 125°C
ZENER VOLTAGE : VZ(V)
VZ -IZ CHARACTERISTICS
0
1
2
3
4
5
8
9
12.2
ZENER VOLTAGE : VZ(V)
f = 1MHz
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
7
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
1000
100
10
1
6
0
2
4
6
AVE : 11.99V
12
11.9
11.8
11.7
8
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
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12.1
Ta=25°C
IZ=10mA
n=30pcs
VZ DISPERSION MAP
5/6
2013.11 - Rev.D
Data Sheet
TDZ12
lElectrical characteristic curves
50
1
Ta=25°C
VR=9.0V
n=30pcs
0.8
45
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(nA)
0.9
0.7
0.6
0.5
0.4
AVE : 0.17344nA
0.3
0.2
40
35
Ta=25°C
f=1MHz
VR=0V
n=10pcs
30
25
20
15
10
0.1
5
0
0
IR DISPERSION MAP
AVE : 37.78pF
Ct DISPERSION MAP
DYNAMIC IMPEDANCE : ZZ(W)
1000
100
10
1
0.1
1
10
ZENER CURRENT : IZ(mA)
ZZ -IZ CHARACTERISTICS
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6/6
2013.11 - Rev.D
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
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responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
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such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
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R1102A