2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (60±10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 zExternal dimensions (Unit : mm) 2SD2212 4.0 1.5 0.4 1.0 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. 1.5 1.5 0.4 (3) (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 0.4 ROHM : MPT3 EIAJ : SC-62 zAbsolute maximum ratings (Ta=25°C) W 150 °C −55 to +150 °C ∗1 Single pulse Pw=100ms ∗2 When mounted on a 40×40×0.7mm ceramic board. ∗3 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. hFE Marking 2SD2143 2SD1866 MPT3 1k to 10k DR CPT3 1k to 10k − ATV 1k to 10k − T100 1000 TL 2500 TV2 2500 Basic ordering unit (pieces) 5.1 6.5 0.75 2SD1866 2SD2212 Code 9.5 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 2.5 6.8 4.4 Package 1.5 2.5 ROHM : CPT3 EIAJ : SC-63 zPackaging specifications and hFE Type 0.8Min. 0.9 Tj Tstg ∗3 2.3 W W (Tc=25°C) 0.5 1 10 1 2SD1866 Junction temperature Storage temperature C0.5 W ∗2 1.0 PC 2SD2143 0.9 1.0 2SD2212 Collector power dissipation ∗1 0.9 V A (DC) A (Pulse) 1.5 5.5 0.65 6 2 3 0.5 2 (1) VEBO IC Collector current 2SD2143 2.3 V V (2) Unit 60±10 60±10 (3) Limits VCBO VCEO 2.3 Symbol 0.5 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage 14.5 0.65Max. 0.5 zEquivalent circuit (1) C (2) (3) 2.54 2.54 1.05 0.45 Taping specifications B ROHM : ATV R1 E : Emitter B : Base C : Collector R2 (1) Emitter (2) Collector (3) Base E R1 R2 3.5kΩ 300Ω Rev.A 1/3 2SD2212 / 2SD2143 / 2SD1866 Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol Min. Typ. Max. Unit BVCBO BVCEO 50 50 − − 70 70 V V ICBO − − 1.0 µA VCB=40V IEBO VCE(sat) − − − − 3 1.5 mA V VEB=5V IC/IB=1A/1mA hFE fT 1000 − − 80 10000 − − MHz Cob − 25 − pF Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Conditions IC=50µA IC=5mA ∗ VCE=2V, IC=1A VCE=5V, IE= −0.1A, f=30MHz VCB=10V, IE=0A, f=1MHz ∗ Measured using pulse current. zElectrical characteristics curves A 00µA 1.2 IB=2 1.0 0.8 0.6 0.4 0µ 25 A µA 200 IB= 1.4 1.2 1.0 0.8 0.6 0.4 1 0.5 0.2 0.1 0.05 25˚C 250µ VCE=2V 2 −25˚C 1.4 400µA 1.6 350µA 5 Ta=25°C A 100 ˚C µA 300 1.6 0.2 0.01 0.2 0 0 1 2 3 4 5 2 4 6 8 10 0.001 0.5 1 1.5 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Groundede emitter output characteristics ( Ι ) Fig.2 Grounded emitter output characteristics ( ΙΙ ) Fig.3 Grounded emitter propagation characteristics 10000 Ta=25°C 5000 100 50 20 °C 25°C =1 00 200 500 200 100 5° C VCE=2V 1000 Ta 500 2000 −2 1000 DC CURRENT GAIN : hFE VCE=4V 2000 50 20 10 0.001 0.01 0.1 0.2 0.5 1 2 5 10 100 VCE=2V 5000 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 10000 DC CURRENT GAIN : hFE 0µ 30 Ta= 500µA 1.8 450µA COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2.0 Ta=25°C 500µA 450µA 400µA 1.8 COLLECTOR CURRENT : Ic (A) 2.0 10 0.001 0.01 0.1 0.2 0.5 1 2 5 10 Ta=25°C 50 20 10 5 2 IC/IB=1000 1 500 0.5 0.2 0.01 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig.6 Collector-emitter saturation voltage vs. collector current Rev.A 2/3 2SD2212 / 2SD2143 / 2SD1866 10 2 Ta= −25°C 1 100°C 0.5 0.2 25°C 0.01 0.1 0.2 0.5 1 2 50 20 10 5 0.05 0.1 0.2 5 10 0.5 1 2 5 10 20 50 5 Ic max (pulse) 2 1 500m Pw =1 200m 00 m S 100m 50m 20m 10m 5m Ta=25°C Single 2m Nonrepetitive 1m Pulse 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (A) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.7 Collector-emitter saturation voltage vs. collector current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Safe operating area (A. S. O) 2SD2212 (MPT) 10 10 5 50 100 200 500 1000 mS 5 10 20 S 2m 1m 0.1 0.2 0.5 1 2 mS Ta=25°C Single Nonrepetitive Pulse =1 Pw 5m 0m S 0m 20m 10m 0 =1 =1 50m DC ∗ 0 =1 S Pw m 00 100m Ic max (pulse) Pw 1mS =1 200m 2 1 500m Pw Pw= DC Pw 2 1 500m Ic max (pulse) COLLECTOR CURRENT : Ic (A) 5 COLLECTOR CURRENT : Ic (A) 100 C 5 Ta=25°C IE=0A f=1MHz mS =1 S Pw 0m =1 Pw 20 10 200 COLLECTOR CURRENT : Ic (A) IC/IB=1000 50 D COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Transistors 200m 100m 50m 20m 10m 5m Ta=25°C Single Nonrepetitive Pulse ∗ When mounted on 1.7mm thick PCB having collector plating area 1cm2or larger. 2m 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (A. S. O) 2SD2143 (CPT) Fig.11 Safe operating area (A. S. O) 2SD1866 (ATV) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1