RBQ10T65A : Diodes

Schottky Barrier Diode
Datasheet
RBQ10T65A
Dimensions (Unit : mm)
Application
General rectification
Structure
4.5±0.3
0.1
10.0±0.3
0.1
8.0±0.2
12.0±0.2
1) Cathode common type.
15.0± 0.4
0.2
Features
2) Low IR
5.0±0.2
①
1.2
1.3
(1)
0.8
(2)
(3)
Anode Cathode Anode
14.0±0.5
3) High reliability
2.8±0.2
0.1
φ3.2±0.2
2.6±0.5
Construction
0.1
0.75±0.05
Silicon epitaxial planar
2.45±0.5 2.45±0.5
ROHM : TO220FN
: Manufacture date
①
(1) (2) (3)
Absolute maximum ratings (Tc= 25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
65
V
Reverse voltage (DC)
VR
65
V
Average rectified forward current (*1)
Io
10
A
IFSM
50
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
40 to 150
°C
Forward current surge peak (60Hz・1cyc)
(*1) Rating of per diode : Io/2
Electrical characteristics (Tj = 25°C)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
VF
-
-
0.69
V
IF=5A
Reverse current
IR
-
-
150
A
VR=65V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.07 - Rev.D
Data Sheet
RBQ10T65A
Electrical characteristic curves
100000
REVERSE CURRENT : IR(A)
FORWARD CURRENT : IF(A)
10
Ta = 150°C
1
Ta = 125°C
Ta = 75°C
Ta = 25°C
0.1
Ta = 25°C
0.01
10000
1000
Ta = 75°C
10
Ta = 25°C
1
0.1
100 200 300 400 500 600 700 800
Ta = 25°C
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
700
1000
FORWARD VOLTAGE : VF(mV)
f = 1MHz
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
Ta = 125°C
100
0.01
0
Ta = 150°C
100
10
1
0
5
10
15
20
25
680
670
660
650
640
AVE : 629.1mV
630
620
610
600
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
Ta=25°C
IF=5A
n=30pcs
690
VF DISPERSION MAP
2/5
2015.07 - Rev.D
Data Sheet
RBQ10T65A
Electrical characteristic curves
450
Ta=25°C
VR=65V
n=30pcs
40
30
AVE : 12.36A
20
10
430
420
410
AVE : 396pF
400
390
380
370
360
350
0
IR DISPERSION MAP
Ct DISPERSION MAP
300
30
250
IFSM
8.3ms
1cyc.
200
AVE : 130A
150
100
50
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
Ta=25°C
f=1MHz
VR=0V
n=10pcs
440
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
REVERSE CURRENT : IR(A)
50
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
AVE : 7.5ns
10
5
0
0
IFSM DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
trr DISPERSION MAP
3/5
2015.07 - Rev.D
Data Sheet
RBQ10T65A
Electrical characteristic curves
300
IFSM
250
8.3ms
PEAK SURGE
FORWARD CURRENT : IFSM(A)
PEAK SURGE
FORWARD CURRENT : IFSM(A)
300
8.3ms
1cyc.
200
150
100
50
0
250
IFSM
time
200
150
100
50
0
1
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
TIME : t(ms)
IFSM-t CHARACTERISTICS
1000
15
100
FORWARD POWER
DISPERSION : PF (W)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
10
Rth(j-a)
10
Rth(j-c)
1
0.1
D = 1/2
10
Sin(θ=180)
DC
5
0.01
0.001
0.001
0
0.01
0.1
1
10
100
0
1000
TIME : t(s)
Rth-t CHARACTERISTICS
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5
10
15
20
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
4/5
2015.07 - Rev.D
Data Sheet
RBQ10T65A
Electrical characteristic curves
30
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
REVERSE POWER
DISPERSION : PR (W)
2
1.5
1
DC
D = 1/2
0.5
Sin(θ=180)
0V
t
20
T
DC
15
VR
D=t/T
VR=30V
Tj=150°C
D = 1/2
10
Sin(θ=180)
5
0
0
0
10
20
30
40
50
60
0
70
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
T
VR
D=t/T
VR=30V
Tj=150°C
DC
D = 1/2
10
Sin(θ=180)
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
t
5
25
50
75
100
125
150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
100
125
150
25
20
AVE :12.6kV
15
10
AVE : 2.9kV
5
0
0
0
75
30
25
15
50
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
0V
20
25
Io
0A
30
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io
0A
25
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
5/5
2015.07 - Rev.D
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
R1102A