2SC4505 / 2SC4620 Transistors Power Transistor (400V, 0.1A) 2SC4505 / 2SC4620 zExternal dimensions (Unit : mm) MPT3 0.5 4.5 1.6 1.5 2.5 4.0 zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7µs at Ic =100mA. 4) Complements the 2SC4505 and the 2SA1759. (1) (3) 1.0 (2) 0.5 0.4 1.5 zAbsolute maximum ratings (Ta=25°C) 400 400 7 0.1 V V 2SC4505 dissipation 2SC4620 Junction temperature Storage temperature (3)Emitter ATV V A(DC) 0.5 W W 2 1 Tj 150 Tstg −55 to +150 2.5 6.8 A(Pulse) ∗1 0.2 PC (2)Collector ∗2 W °C °C 0.65Max. ∗3 0.5 4.4 VCBO VCEO VEBO IC Collector current Collector power Unit 0.9 Emitter-base voltage Limits 1.0 Collector-base voltage Collector-emitter voltage Symbol 1.5 3.0 (1)Base 14.5 Parameter 0.4 0.4 (1) (2) (3) 2.54 2.54 ∗1 Single pulse, Pw=20ms, Duty=1/2 ∗2 When mounted on a 40×40×0.7mm ceramic board. ∗3 When t=1.7mm and the foll collector area on the PC board is 1cm2 or greater. 1.05 0.45 (1)Emitter (2)Collector Taping specifications (3)Base zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol Min. Typ. Max. Unit BVCBO BVCEO 400 400 7 − − − − − V V IC=50µA IC=1mA V IE=50µA µA VCB=400V µA VEB=6V − − 0.05 10 10 0.5 V IC/IB=10mA/1mA − − 20 1.5 270 − V − MHz IC/IB=10mA/1mA hFE fT − 82 − Cob − 7 − pF VCB=10V , IE=0A , f=1MHz ton − 1 − µs IC=−100mA RL=1.5kΩ tstg − 5.5 − µs IB1=−IB2=10mA tf − 1.7 − µs VCC~−150V BVEBO − − ICBO IEBO VCE(sat) VBE(sat) − − Conditions VCE=10V , IC=10mA VCE=10V , IE=−10mA , f=10MHz zPackaging specifications and hFE Type 2SC4505 2SC4620 Package hFE MPT3 PQ ATV PQ Marking CE∗ − Code T100 1000 TV2 2500 Basic ordering unit (pieces) ∗ Denotes hFE Rev.B 1/3 2SC4505 / 2SC4620 Transistors zElectrical characteristics (Ta=25°C) 1 0.5 Ta=25°C 40 0.2 0.1 0.05 0.02 0.01 0.005 IB=0mA 10 5 6 8 10 0 1000 500 VCE=10V Ta=100°C 25°C 200 100 −25°C 50 20 10 5 2 1 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 Ta=25°C VCE=10V 500 200 100 50 20 10 5 2 1 −0.005 −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 EMITTER CURRENT : IE (A) Fig.7 Gain bandwidth product vs. emitter current 1.0 1 0.001 0.002 0.005 0.01 0.02 1.4 1.6 1.2 Ta=25°C 2 1 0.5 0.2 IC/IB=20 10 5 0.1 0.05 0.02 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.05 0.1 0.2 0.5 1 COLLECTOR CURRENT : IC (A) 5 Fig.3 DC current gain vs. collector current ( Ι ) 0.5 1 10 IC/IB=10 5 2 1 0.5 VBE(sat) Ta=−25°C 25°C 100°C 0.2 0.1 0.05 Ta=100°C VCE(sat) 25°C 0.02 0.01 0.001 0.002 0.005 −25°C 0.01 0.02 0.05 0.1 0.2 0.5 1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage Collector-base saturation voltage vs. collector current vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 0.8 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ΙΙ ) 0.4 0.6 Fig.2 Ground emitter propagation characterisitics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 Ground emitter output characteristics 0.2 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE :VCE(sat) (V) BASE SATURATION VOLTAGE :VBE(sat) (V) 4 5V 20 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hEF 50 0.001 1000 Ta=25°C f=1MHz IE=0A 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage 1 COLLECTOR CURRENT : IC (mA) 2 VCE=10V 100 0.002 0 0 TRANSITION FREQUENCY : fT (MHz) 200 DC CURRENT GAIN : hEF 0.5mA 80 Ta=25°C 500 °C 25°C −25°C 120 A mA 3.0m 2.5 2.0mA 1.5mA 1.0mA 1000 VCE=3V Ta=100 mA 3.5 160 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) 200 Ic Max. (Pulse∗) Pw=10m Pw=1m 0.1 Pw=100m DC 0.01 Ta=25°C ∗Single 0.001 nonrepetitive pulse 0.1 1 10 100 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area (2SC4505) Rev.B 2/3 2SC4505 / 2SC4620 Transistors COLLECTOR CURRENT : IC (A) 1 Ic Max. (Pulse) Pw=10m Pw=1m 0.1 Pw=100m DC 0.01 Ta=25°C Single 0.001 nonrepetitive pulse 0.1 1 10 100 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SC4620) RL=1.5kΩ VIN IB1 Base current wave form IB2 IB1 IB2 TUT ~150V −VCC_ Pw ~50µs Pw_ duty cycle 90% 1% IC ~6V −VBB_ 10% Collector current wave form ton tstg tf Fig.11 Switching time mesurement circuit Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. 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