2SD2703 Transistors General purpose amplification (30V, 1A) 2SD2703 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier 0.2 Unit 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 1 A ICP 2 A ∗1 Junction temperature Tj Range of storage temperature Tstg ∗1 Single pulse, PW=1ms ∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate 0.77 0~0.1 Limits VCBO PC 0.85Max. 0.17 Symbol Collector-base voltage Power dissipation 0.2 0.15Max. Abbreviated symbol : EU (1) Base (2) Emitter (3) Collector zPackaging specifications zAbsolute maximum ratings (Ta=25°C) Collector current 1.7 2.1 ROHM : TUMT3 Parameter (1) 2.0 0.3 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≦ 350mV At IC = 500mA / IB = 25mA 0.65 0.65 1.3 (2) (3) 0.4 0.8 ∗2 W 150 °C −55 to +150 °C Package Type Taping Code TL Basic ordering unit (pieces) 3000 2SD2703 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit − − Conditions BVCBO 30 Collector-emitter breakdown voltage BVCEO 30 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA Collector cutoff current ICBO − − 100 nA VCB=30V Emitter cutoff current IEBO − − 100 nA VEB=6V VCE(sat) − 120 350 mV IC/IB=500mA/25mA DC current gain hFE 270 − 680 − VCE/IC=2V/100mA Transition frequency fT − 320 − Cob − 7 − Collector-emitter saturation voltage Corrector output capacitance V IC=10µA Collector-base breakdown voltage ∗ MHz VCE=2V, IE=−100mA, f=100MHz ∗ pF VCB=10V, IE=0A, f=1MHz ∗ Pulsed Rev.A 1/2 2SD2703 Transistors BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 Ta=25°C Ta=−40°C 100 VCE=2V Pulsed 10 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) Ta=25°C Ta=100°C Ta=−40°C 0.01 0.001 0 1.0 0.5 Ta=100°C 0.1 VCE(sat) Ta=25°C Ta=−40°C 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) 10 Ta=25°C VCE=2V 1 0.1 IC/IB=50/1 IC/IB=20/1 0.01 IC/IB=10/1 0.001 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current 1000 tstg tdon 100 VCE=2V Ta=25°C f=100MHz 0.1 EMITTER CURRENT : IE (A) Fig.5 Gain bandwidth product vs. emitter current Fig.4 Grounded emitter propagation characteristics EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1 10 0.01 1.5 BASE TO EMITTER VOLTAGE : VBE (V) 100 VBE(sat) Ta=−40°C Ta=25°C Ta=100°C 1000 VCE=2V Pulsed 0.1 =20/1 IC/IB=20 Pulsed Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.1 DC current gain vs. collector current 1 10 SWITCHING TIME : (ns) DC CURRENT GAIN : hFE Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) zElectrical characteristic curves 1 100 tf tr 10 Ta=25°C VCE=5V IC/IB=20/1 1 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.6 Switching time IC=0A f=1MHz Ta=25°C Cib Cob 10 1 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1