Datasheet - Silikron

SSF2356G8
Main Product Characteristics:
VDSS
20V
RDS(on)
0.4Ω (typ.)
ID
0.54A
SOT-363
Marking and Pin
Features and Benefits:

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Schematic Diagram
Assignment
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
ID
0.54
A
IDM
1.5
A
PD
0.2
W
TJ,TSTG
-55 To 150
℃
RθJA
625
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 1 of 6
SSF2356G8
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
Min.
Typ.
Max.
Units
20
Conditions
—
—
V
VGS = 0V, ID = 250μA
—
0.4
0.55
Ω
VGS=4.5V,ID = 0.54A
—
0.5
0.7
Ω
VGS=2.5V,ID = 0.5A
—
0.7
0.9
Ω
VGS=1.8V,ID = 0.35A
VGS(th)
Gate threshold voltage
0.5
—
1.0
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
1
μA
VDS = 20V,VGS = 0V
IGSS
Gate-to-Source forward leakage
—
—
±1
—
—
±10
Ciss
Input capacitance
—
87
—
Coss
Output capacitance
—
17
—
Crss
Reverse transfer capacitance
—
10
—
μA
VGS = ±4.5V
VGS = ±8V
VGS = 0V
pF
VDS = 16V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
©Silikron Semiconductor CO., LTD.
Min.
Typ.
Max.
Units
—
—
0.54
A
—
—
1.5
A
—
—
1.3
V
2013.11.05
www.silikron.com
Version: 1.1
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=0.12A, VGS=0V
page 2 of 6
SSF2356G8
Test circuits and Waveforms
EAS Test Circuit
Gate charge test circuit
Switching Time Test Circuit
Switching Waveforms
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 3 of 6
SSF2356G8
Mechanical Data:
SOT-363(SC-88) PACKAGE OUTLINE DIMENSION
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 4 of 6
SSF2356G8
Ordering and Marking Information
Device Marking: MK1
Package (Available)
SOT-363(SC-88)
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tape
Tapes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/
Carton
Box
SOT-363
3000
10
30000
360000
12
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 5 of 6
SSF2356G8
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
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E-mail: [email protected]
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
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