uClamp3305P Low Voltage TVS for ESD Protection PROTECTION PRODUCTS - MicroClampTM Description Features The μClamp series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect up to four lines operating at 3.3 volts. TM Transient protection for data lines to The μClampTM3305P is a solid-state device designed specifically for transient suppression. It is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over traditional pn junction processes. They offer desirable characteristics for board level protection including fast response time, low clamping voltage and no device degradation. Mechanical Characteristics The μClamp3305P may be used to meet the immunity requirements of IEC 61000-4-2, level 4 (±15kV air, ±8kV contact discharge). It is packaged in an ultra small SLP1616P6 package with a low profile of only 0.58mm. The leads are spaced at a pitch of 0.5mm and are finished with lead-free NiPdAu. The small package makes it ideal for use in portable electronics such as cell phones, digital still cameras, and notebook computers. 3 SLP1616P6 package RoHS/WEEE Compliant Nominal Dimensions: 1.6 x 1.6 x 0.58 mm Lead Pitch: 0.5mm Lead Finish: NiPdAu Marking : Orientation Mark and Marking Code Packaging : Tape and Reel Applications Circuit Diagram 1 IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) Small package for use in portable electronics Protects five I/O lines Working voltage: 3.3V Low leakage current Low operating and clamping voltages Solid-state silicon-avalanche technology Cellular handsets and accessories Notebooks and handhelds MP3 Players Digital cameras Portable instrumentation PDA’s Package 4 5 1.6 6 1 1.6 6 0.5 0.6 Center Tab (GND) Device Schematic Revision 02/15/2008 6 Pin SLP package (Bottom Side View) 1.6 x 1.6 x 0.58mm (Nominal) 1 www.semtech.com uClamp3305P PROTECTION PRODUCTS Absolute Maximum Rating R ating Symbol Value Units Peak Pulse Power (tp = 8/20μs) Pp k 40 Watts Maximum Peak Pulse Current (tp = 8/20μs) Ip p 5 Amps ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) V PP +/- 20 +/- 15 kV Operating Temperature TJ -55 to +125 °C TSTG -55 to +150 °C Storage Temperature Electrical Characteristics (T=25oC) Parameter Reverse Stand-Off Voltage Symbo l Conditions Minimum Typical VRWM Punch-Through Voltage V PT IPT = 2μA 3.5 Snap -Back Voltage VSB ISB = 50mA 2.8 Reverse Leakage Current IR VRWM = 3.3V Clamp ing Voltage VC Clamp ing Voltage 3.9 Maximum Units 3.3 V 4.6 V V 0.5 μA IPP = 1A, tp = 8/20μs Any I/O to Gnd 5.5 V VC IPP = 5A, tp = 8/20μs Any I/O to Gnd 8.0 V Reverse Clamp ing Voltage VCR IPP = 1A, tp = 8/20μs Any I/O to Gnd 2.4 V 25 pF Junction Cap acitance Cj © 2008 Semtech Corp. 0.05 I/O p in to Gnd VR = 0V, f = 1MHz 20 I/O p in to Gnd VR = 3.3V, f = 1MHz 12 I/O p in to I/O p in VR = 0V, f = 1MHz 10 I/O p in to I/O p i n VR = 3.3V, f = 1MHz 7.5 2 pF 12.5 pF pF www.semtech.com uClamp3305P PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 1 100 % of Rated Power or I PP Peak Pulse Power - P PP (kW) 90 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0 1000 25 50 75 100 125 150 Ambient Temperature - TA (oC) Pulse Duration - tp (µs) Forward Voltage vs. Forward Current Clamping Voltage vs. Peak Pulse Current 10 8 Forward Voltage - VF (V) Clamping Voltage - VC (V) 7 8 6 4 Waveform Parameters: tr = 8μs td = 20μs 2 6 5 4 3 2 Waveform Parameters: tr = 8μs td = 20μs 1 0 0 0 1 2 3 4 Peak Pulse Current - IPP (A) 5 0 6 1 2 3 4 Forward Current - IF (A) 5 6 ESD Clamping (8kV Contact per IEC 61000-4-2) Normalized Capacitance vs. Reverse Voltage 1.2 f = 1 MHz CJ(VR) / CJ(VR=0) 1 Line-Line 0.8 0.6 Line-Ground 0.4 0.2 0 0 0.5 © 2008 Semtech Corp. 1 1.5 2 2.5 Reverse Voltage - VR (V) 3 3.5 3 www.semtech.com uClamp3305P PROTECTION PRODUCTS Insertion Loss S21 - LtoL (I/O to I/O) CH1 S21 LOG Insertion Loss S21 -LtoG (I/O to Pin 2) 6 dB / REF 0 dB CH1 S21 0 dB 6 dB / REF 0 dB 1: -3.0155 dB 260 MHz 2: -4.0655 dB 900 MHz 2: -7.4637 dB 900 MHz 3: -6.1405dB 1.8 GHz 3: -9.2053dB 1.8 GHz 0 dB 4: -8.0944 dB 2.5 GHz -6 dB LOG 1: -3.0041 dB 532 MHz 1 1 4: -9.9280 dB 2.5 GHz -6 dB 2 2 -12 dB 4 -18 dB -18 dB -24 dB -24 dB -30 dB -30 dB -36 dB 1 MHz 10 MHz 100 MHz -36 dB 3 1 GHz GHz STOP 3000. 000000 MHz START . 030 MHz 3 -12 dB 3 1 MHz START . 030 MHz 10 MHz 100 MHz 4 3 1 GHz GHz STOP 3000. 000000 MHz Crosstalk S21 (I/O to Pin 4) CH1 S21 LOG 20 dB /REF 0 dB START . 030 MHz © 2008 Semtech Corp. STOP 3000. 000000 MHz 4 www.semtech.com uClamp3305P PROTECTION PRODUCTS Applications Information Figure 1 - Circuit Diagram Device Connection Options The μClamp3305P is designed to protect 5 signal lines with an operating voltage of 0 to 3.3V. It will present a high impedance to the protected line up to 3.3 volts. It will “turn on” when the line voltage exceeds 3.5 volts. The device is unidirectional and may be used on lines where the signal polarity is above ground. 1 Pin 1,3,4,5,6 are connected to I/O signals. The center tab is connected to system ground. Pin 2 should be left open or not connected. All signal lines and ground should be made with the lowest impedance and inductance path as possible. This will improve signal quality of the lines and keep the clamping voltage as low as possible during a fast transient. 3 4 6 5 Center Tab (GND) Figure 2 - Layout Example Due to the “snap-back” characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on. EPD TVS Characteristics These devices are constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, these devices can effectively operate at 3.3V while maintaining excellent electrical characteristics. Figure 3 - EPD TVS IV Characteristic Curve The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will “punch-through” to a conducting state. This structure results in a device with superior DC electrical parameters at low voltages while maintaining the capability to absorb high transient currents. © 2008 Semtech Corp. IPP ISB IPT VF IR VRWM VSB VPT VC IF 5 www.semtech.com uClamp3305P PROTECTION PRODUCTS Applications Information - Spice Model I/O Figure 3 - μClamp3305P Spice Model μClamp3305P Spice Parameters © 2008 Semtech Corp. Parameter Unit D1 (T VS) IS Amp 2E-12 BV Volt 20 VJ Volt 0.57 RS O hm 1.444 IBV Amp 1.0 E-3 CJO Farad 2 0 E -1 2 TT sec 2.541E-9 M -- 0 .2 3 6 N -- 1.1 EG eV 1.11 6 www.semtech.com uClamp3305P PROTECTION PRODUCTS Outline Drawing - SLP1616P6 A B D PIN 1 INDICATOR (LASER MARK) E DIM A SEATING PLANE aaa C A2 A A1 A2 b D D1 E E1 e L N aaa bbb C A1 D1 1 2 LxN E/2 E1 DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .020 .023 .026 0.00 .001 .002 (.005) .008 .010 .012 .059 .063 .067 .041 .047 .051 .059 .063 .067 .010 .016 .020 .020 BSC .010 .013 .016 6 .003 .004 0.50 0.58 0.65 0.00 0.03 0.05 (0.13) 0.20 0.25 0.30 1.50 1.60 1.70 1.05 1.20 1.30 1.50 1.60 1.70 0.25 0.40 0.50 0.50 BSC 0.25 0.33 0.40 6 0.08 0.10 N bxN bbb e C A B D/2 NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. Land Pattern - SLP1616P6 P X DIMENSIONS Z H G DIM C G H K P X Y Z (C) Y INCHES .060 .035 .018 .051 .020 .012 .025 .085 MILLIMETERS 1.52 0.89 0.45 1.30 0.50 0.30 0.63 2.15 K NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 3. THERMAL VIAS IN THE LAND PATTERN OF THE EXPOSED PAD SHALL BE CONNECTED TO A SYSTEM GROUND PLANE. FAILURE TO DO SO MAY COMPROMISE THE THERMAL AND/OR FUNCTIONAL PERFORMANCE OF THE DEVICE. © 2008 Semtech Corp. 7 www.semtech.com uClamp3305P PROTECTION PRODUCTS Marking Ordering Information 3305P YW Part Number Working Voltage Lead Finish Qty per Reel Reel Size uClamp3305P.TCT 3.3V Pb Free 3,000 7 Inch MicroClamp, uClamp and μClamp are marks of Semtech Corporation Y = year W = Week Tape and Reel Specification Device Orientation in Tape (Pin 1 upper left towards sprocket holes) A0 1.78 +/-0.10 mm B0 K0 1.78 +/-0.10 mm 0.69 +/-0.10 mm Tape Width B, (Max) D D1 8 mm 4.2 mm (.165) 1.5 + 0.1 mm - 0.0 mm (0.59 +.005 - .000) 0.8 mm ±0.05 (.031) F K (MAX) P P0 P2 T(MAX) W 3.5±0.05 mm (.138±.002) 2.4 mm (.094) 4.0±0.1 mm (.157±.004) 4.0±0.1 mm (.157±.004) 2.0±0.05mm (.079±.002) 0.4 mm (.016) 8.0 mm + 0.3 mm - 0.1 mm (.312±.012) E 1.750±.10 mm (.069±.004) Contact Information for Semtech International AG Taiw an Branch Tel: 886-2-2748-3380 Fax: 886-2-2748-3390 Semtech Sw itz erland GmbH Japan Branch Tel: 81-3-6408-0950 Fax: 81-3-6408-0951 Tel: 82-2-527-4377 Fax: 82-2-527-4376 Semtech Limited (U.K.) Tel: 44-1794-527-600 Fax: 44-1794-527-601 Tel: 86-21-6391-0830 Fax: 86-21-6391-0831 Semtech France SARL Tel: 33-(0)169-28-22-00 Fax: 33-(0)169-28-12-98 Semtech International AG is a wholly-owned subsidiary of Semtech Corporation, which has its headquarters in the U.S.A. Semtech Germany GmbH Tel: 49-(0)8161-140-123 Fax: 49-(0)8161-140-124 © 2008 Semtech Corp. 8 Korea Branch Shanghai Office www.semtech.com