FZT749 PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking Package Packing Method FZT749 749 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -35 V VEBO Emitter-Base Voltage -5 V Collector Current - Continuous -3 A -55 to +150 °C IC TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady state limits. Fairchild Semiconductor should be consulted on application involving pulsed or low-duty cycle operation. © 1998 Fairchild Semiconductor Corporation FZT749 Rev. 1.1.0 www.fairchildsemi.com 1 FZT749 — PNP Low Saturation Transistor January 2014 Values are at TA = 25°C unless otherwise noted. Symbol PD RθJA Parameter Total Device Dissipation Thermal Resistance, Junction to Ambient Max. Unit 2 W 62.5 °C/W Note: 3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA -25 V BVCBO Collector-Base Breakdown Voltage IC = -100 μA -35 V BVEBO Emitter-Base Breakdown Voltage IE = -100 μA -5 V ICBO Collector-Base Cut-Off Current IEBO Emitter-Base Cut-Off Current hFE DC Current Gain(4) VCB = -30 V -100 nA VCB = -30 V, TA = 100°C -10 μA VEB = -4 V -100 nA IC = -50 mA, VCE = -2 V 70 IC = -1 A, VCE = -2 V 100 IC = -2 A, VCE = -2 V 75 IC = -6 A, VCE = -2 V 15 300 IC = -1 A, IB = -100 mV -300 IC = -3 A, IB = -300 mV -600 VBE(sat) Base-Emitter Saturation Voltage(4) IC = -1 A, IB = -100 mV -1.25 V VBE(on) Base-Emitter On Voltage(4) IC = -1 A, VCE = -2 V -1 V 100 pF VCE(sat) Collector-Emitter Saturation Voltage(4) Cob Output Capacitance VCB = -10 V, IE = 0, f = 1 MHz fT Transition Frequency IC = -100 mA, VCE = -5 V, f = 100 MHz 100 mV MHz Note: 4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 1998 Fairchild Semiconductor Corporation FZT749 Rev. 1.1.0 www.fairchildsemi.com 2 FZT749 — PNP Low Saturation Transistor Thermal Characteristics(3) FZT749 — PNP Low Saturation Transistor Physical Dimensions SOT-223 Figure 1. MOLDED PACKAGE, SOT-223, 4 LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf. © 1998 Fairchild Semiconductor Corporation FZT749 Rev. 1.1.0 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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