FDMC8854 N-Channel Power Trench® MOSFET 30V, 15A, 5.7mΩ Features General Description Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A Low Profile - 1mm max in Power 33 RoHS Compliant Application DC - DC Conversion Bottom Top Pin 1 S S S G D D D D D 5 4 G D 6 3 S D 7 2 S D 8 1 S MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25°C -Continuous TA = 25°C ID TJ, TSTG Units V ±20 V 15 (Note 1a) -Pulsed PD Ratings 30 15 A 100 Power Dissipation TC = 25°C Power Dissipation TA = 25°C 41 (Note 1a) Operating and Storage Junction Temperature Range 2.0 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 3 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking FDMC8854 Device FDMC8854 ©2012 Fairchild Semiconductor Corporation FDMC8854 Rev.C4 Package MLP 3.3x3.3 1 Reel Size 7’’ Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET June 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 30 V ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA 3 V 21 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1 1.9 -6 mV/°C VGS = 10V, ID = 15A 4.4 5.7 VGS = 4.5V, ID = 13A 5.6 7.6 VGS = 10V, ID = 15A, TJ = 125°C 6.6 9.0 VDS = 5V, ID = 15A 60 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 10V, VGS = 0V, f = 1MHz f = 1MHz 2560 3405 pF 515 685 pF 290 435 pF Ω 1.3 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time 5 10 ns Qg(TOT) Total Gate Charge 41 57 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 10V, ID = 15A VGS = 10V, RGEN = 6Ω VDD =10V, ID = 15A, VGS = 10V 13 23 5 10 ns ns 31 50 ns 7 nC 7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 15A (Note 2) IF = 15A, di/dt = 100A/μs 0.8 1.3 V 33 50 ns 28 42 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 135°C/W when mounted on a minimum pad of 2 oz copper a. 60°C/W when mounted on a 1 in2 pad of 2 oz copper 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDMC8854 Rev.C4 2 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE I D, DRAIN CURRENT (A) 100 VGS = 10.0V 80 VGS =4.5V VGS = 4.0V 60 VGS = 3.5V 40 20 0 PULSE DURATION = 80μ s DUTY CYCLE = 0.5%MAX 0 1 2 3 4 5 3.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 2.5 VGS = 3.5V 2.0 VGS = 4V 1.5 VGS = 4.5V 1.0 VGS = 10.0V 0.5 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 80 100 15 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 1.6 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 1.8 ID =15A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -75 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 12 ID =15A 9 TJ = 125oC 6 TJ = 25oC 3 2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs. Junction Temperature 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs. Gate to Source Voltage 100 100 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 40 I D, DRAIN CURRENT(A) 80 60 40 TJ = 150oC TJ = 25oC 20 TJ = -55oC 0 1.5 2.0 2.5 3.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4.0 Figure 5. Transfer Characteristics FDMC8854 Rev.C4 VGS = 0V 10 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 3 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8854 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 4000 ID = 15A 8 Ciss VDD = 5V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 10V 6 VDD =15V 4 2 1000 Coss Crss f = 1MHz VGS = 0V 100 0.1 0 0 10 20 30 Qg, GATE CHARGE(nC) 40 50 Figure 7. Gate Charge Characteristics 80 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 30 Figure 8. Capacitance vs. Drain to Source Voltage 20 10 TJ = 25oC TJ = 125oC 60 VGS = 10V 40 Package limited VGS = 4.5V 20 o RθJC = 3 C/W 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE(ms) 0 1000 25 P(PK), PEAK TRANSIENT POWER (W) 1ms 10ms 0.01 0.01 100ms SINGLE PULSE TJ = MAX RATED RθJA = 135oC/W TA = 25oC 0.1 1 1s DC 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 125 150 200 VGS = 10V 100 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 10 150 – T A -----------------------125 1 SINGLE PULSE 0.5 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area FDMC8854 Rev.C4 100 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 10 0.1 75 o 100 1 R DS(ON) LIMITED 50 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 www.fairchildsemi.com 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 0.01 0.004 -3 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDMC8854 Rev.C4 5 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMC8854 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEU-C08 FDMC8854 Rev.C4 6 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 FDMC8854 Rev.C4 7 www.fairchildsemi.com FDMC8854 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ F-PFS™ ®* ® AX-CAP®* FRFET® Global Power ResourceSM PowerTrench® BitSiC™ ® TinyBoost GreenBridge™ PowerXS™ Build it Now™ TinyBuck® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyCalc™ ® Green FPS™ e-Series™ QFET CorePOWER™ TinyLogic® Gmax™ QS™ CROSSVOLT™ TINYOPTO™ GTO™ Quiet Series™ CTL™ TinyPower™ IntelliMAX™ RapidConfigure™ Current Transfer Logic™ TinyPWM™ ISOPLANAR™ DEUXPEED® ™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder TranSiC™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TriFault Detect™ EfficentMax™ SignalWise™ MegaBuck™ TRUECURRENT®* ESBC™ SmartMax™ MICROCOUPLER™ μSerDes™ SMART START™ MicroFET™ ® Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® ® STEALTH™ UHC® MillerDrive™ Fairchild Semiconductor ® Ultra FRFET™ SuperFET MotionMax™ FACT Quiet Series™ SuperSOT™-3 UniFET™ mWSaver® FACT® OptoHiT™ SuperSOT™-6 VCX™ FAST® ® OPTOLOGIC SuperSOT™-8 VisualMax™ FastvCore™ ® ® OPTOPLANAR SupreMOS VoltagePlus™ FETBench™ SyncFET™ XS™ FPS™ Sync-Lock™ 仙童 ™