Datasheet - Fairchild Semiconductor

MMBTA92 / PZTA92
PNP High-Voltage Amplifier
Description
This device is designed for high-voltage driver applications. Sourced from process 76.
C
C
E
E
SOT-23
Mark: 2D
C
SOT-223
B
Figure 1. MMBTA92 Device Package
B
Figure 2. PZTA92 Device Package
Ordering Information
Part Number
Top Mark
Package
Packing Method
MMBTA92
2D
SOT-23 3L
Tape and Reel
PZTA92
A92
SOT-223 4L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
-300
V
VCBO
Collector-Base Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
-500
mA
-55 to +150
°C
IC
TJ, TSTG
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBTA92 / PZTA92 Rev. 1.1.0
www.fairchildsemi.com
1
MMBTA92 / PZTA92 — PNP High-Voltage Amplifier
March 2014
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Max.
Parameter
MMBTA92
Total Device Dissipation
350
(3)
PZTA92(4)
Unit
1000
mW
Derate Above 25°C
2.8
8.0
mW/°C
Thermal Resistance, Junction to Ambient
357
125
°C/W
Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Conditions
Min.
V(BR)CEO
Collector-Emitter Breakdown
Voltage(5)
Parameter
Max.
Unit
IC = -1.0 mA, IB = 0
-300
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = -100 μA, IE = 0
-300
V
V(BR)EBO
-5.0
Emitter-Base Breakdown Voltage
IE = -100 μA, IC = 0
ICBO
Collector Cut-Off Current
VCB = -200 V, IE = 0
-0.25
μA
IEBO
Emitter Cut-Off Current
VEB = -3.0 V, IC = 0
-0.1
μA
hFE
DC Current
Gain(5)
IC = -1.0 mA, VCE = -10 V
25
IC = -10 mA, VCE = -10 V
40
IC = -30 mA, VCE = -10 V
25
V
250
VCE(sat)
Collector-Emitter Saturation
Voltage(5)
IC = -20 mA, IB = -2.0 mA
-0.5
V
VBE(sat)
Base-Emitter Saturation Voltage(5)
IC = -20 mA, IB = -2.0 mA
-0.9
V
fT
Current Gain - Bandwidth Product
IC = -10 mA, VCE = -20 V,
f = 100 MHz
Collector-Base Capacitance
VCB = -20 V, IE = 0,
f = 1.0 MHz
Ccb
50
MHz
6.0
pF
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 1997 Fairchild Semiconductor Corporation
MMBTA92 / PZTA92 Rev. 1.1.0
www.fairchildsemi.com
2
MMBTA92 / PZTA92 — PNP High-Voltage Amplifier
Thermal Characteristics
VCESAT- COLLE CTOR-EMITTER VOLTAGE (V)
h FE - DC CURRE NT GAIN
140
120
125 °C
100
0.4
80
25 °C
60
- 40 °C
40
0
0.1
1
10
I C - COLLECTOR CURRENT (mA)
100
- 40 °C
0.1
V BE(O N) - BASE-EMITTER ON VOLTAGE (V)
1
1
10
I C - COLLECTOR CURRENT (mA)
100
0.9
1
0.8
0.8
- 40 °C
0.7
- 40 °C
0.6
25 °C
0.6
125 °C
0.5
25 °C
125 °C
0.4
β = 10
0.4
V CE = 5V
0.2
1
10
I C - COLLE CTOR CURRENT ( mA)
100
JUNCTION CAPACITANCE (pF)
100
VC B= 150V
10
1
0.1
25
50
75
100
125
T A - AMBIENT TE MPERATURE (°C)
10
I C - COLLECTOR CURRENT (mA)
100
10
f = 1.0 MHz
C ib
1
C ob
0.1
0.1
150
1
10
V R - REVERSE VOLTAGE (V)
100
Figure 8. Junction Capacitance vs.
Reverse-Bias Voltage
Figure 7. Collector Cut-Off Current vs.
Ambient Temperature
© 1997 Fairchild Semiconductor Corporation
MMBTA92 / PZTA92 Rev. 1.1.0
1
Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 5. Base-Emitter Saturation Voltage
vs. Collector Current
I CBO - COLLECTOR CURRENT (nA)
25 °C
Figure 4. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 3. Typical Pulsed Current Gain vs.
Collector Current
V BESAT - BASE -EMITTER VOLTAG E (V)
125 °C
0.2
VCE = 5V
20
0.3
β = 10
0.6
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3
MMBTA92 / PZTA92 — PNP High-Voltage Amplifier
Typical Performance Characteristics
f T - GAIN BANDWIDTH PRODUCT (MHz)
100
1
P D - POWER DISSIPATION (W)
VCE = 50V
80
SOT-223
0.75
V CE = 15V
60
40
TO-92
0.5
SOT-23
0.25
20
0
0
1
10
20
50
100
I C - COLLECTOR CURRENT (mA)
25
50
75
100
TEMPERATURE ( oC)
125
150
Figure 10. Power Dissipation vs.
Ambient Temperature
Figure 9. Gain Bandwidth Product vs.
Collector Current
© 1997 Fairchild Semiconductor Corporation
MMBTA92 / PZTA92 Rev. 1.1.0
0
www.fairchildsemi.com
4
MMBTA92 / PZTA92 — PNP High-Voltage Amplifier
Typical Performance Characteristics (Continued)
MMBTA92 / PZTA92 — PNP High-Voltage Amplifier
Physical Dimensions
SOT-23
0.95
2.92±0.20
3
1.40
1.30+0.20
-0.15
1
2.20
2
0.60
0.37
(0.29)
0.95
0.20
1.00
A B
1.90
1.90
LAND PATTERN
RECOMMENDATION
SEE DETAIL A
1.20 MAX
0.10
0.00
(0.93)
0.10
C
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE PLANE
0.23
0.08
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
0.25
0.20 MIN
(0.55)
SEATING
PLANE
SCALE: 2X
Figure 11. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
© 1997 Fairchild Semiconductor Corporation
MMBTA92 / PZTA92 Rev. 1.1.0
www.fairchildsemi.com
5
MMBTA92 / PZTA92 — PNP High-Voltage Amplifier
Physical Dimensions (Continued)
SOT-223
Figure 12. MOLDED PACKAGING, SOT-223, 4-LEAD (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA04A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf.
© 1997 Fairchild Semiconductor Corporation
MMBTA92 / PZTA92 Rev. 1.1.0
www.fairchildsemi.com
6
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Rev. I68
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