2N4401 / MMBT4401 NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. C E TO-92 SOT-23 EB C Mark:2X Figure 1. 2N4401 Device Package B Figure 2. MMBT4401 Device Package Ordering Information Part Number Marking Package Packing Method 2N4401BU 2N4401 TO-92 3L Bulk 2N4401TF 2N4401 TO-92 3L Tape and Reel 2N4401TFR 2N4401 TO-92 3L Tape and Reel 2N4401TA 2N4401 TO-92 3L Ammo 2N4401TAR 2N4401 TO-92 3L Ammo MMBT4401 2X SOT-23 3L Tape and Reel © 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 www.fairchildsemi.com 2N4401 / MMBT4401 — NPN General-Purpose Amplifier November 2014 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V 600 mA -55 to +150 °C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Symbol PD Max. Parameter Total Device Dissipation Unit 2N4401(3) MMBT4401(4) 625 350 mW 2.8 mW/°C Derate Above 25°C 5.0 RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 °C/W 357 °C/W Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. © 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 www.fairchildsemi.com 2 2N4401 / MMBT4401 — NPN General-Purpose Amplifier Absolute Maximum Ratings(1),(2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit V(BR)CEO Collector-Emitter Breakdown Voltage(5) IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 6.0 V Base Cut-Off Current VCE = 35 V, VEB = 0.4 V Collector Cut-Off Current VCE = 35 V, VEB = 0.4 V IBL ICEX hFE (5) DC Current Gain IC = 0.1 mA, VCE = 1.0 V 20 IC = 1.0 mA, VCE = 1.0 V 40 IC = 10 mA, VCE = 1.0 V 80 IC = 150 mA, VCE = 1.0 V 100 IC = 500 mA, VCE = 2.0 V 40 0.1 μA 0.1 μA 300 IC = 150 mA, IB = 15 mA 0.40 IC = 500 mA, IB = 50 mA 0.75 VCE(sat) Collector-Emitter Saturation Voltage(5) VBE(sat) Base-Emitter Saturation Voltage(5) fT Current Gain - Bandwidth Product IC = 20 mA, VCE = 10 V, f = 100 MHz Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 140 kHz 6.5 pF Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0, f = 140 kHz 30 pF hie Input Impedance IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 1.0 15.0 kΩ hre Voltage Feedback Ratio IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 0.1 8.0 x10-4 hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 40 500 hoe Output Admittance IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 1.0 30 μmhos VCC = 30 V, VEB = 2 V, IC = 150 mA, IB1 = 15 mA 15 ns 20 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA 225 ns 30 ns td Delay Time tr Rise Time ts Storage Time tf Fall Time IC = 150 mA, IB = 15 mA 0.75 IC = 500 mA, IB = 50 mA 0.95 1.20 250 V V MHz Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 www.fairchildsemi.com 3 2N4401 / MMBT4401 — NPN General-Purpose Amplifier Electrical Characteristics V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 500 V CE = 5V 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAGE (V) β = 10 - 40 °C 0.8 25 °C 125 °C 0.6 0.4 1 I C 10 100 - COLLECTOR CURRENT (mA) β = 10 0.3 25 °C 0.1 - 40 °C 1 10 100 I C - COLLECTOR CURRENT (mA) 500 500 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Figure 6. Base-Emitter On Voltage vs. Collector Current Figure 5. Base-Emitter Saturation Voltage vs. Collector Current 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 125 °C 0.2 Figure 4. Collector-Emitter Saturation Voltage vs. Collector Current Figure 3. Typical Pulsed Current Gain vs. Collector Current 1 0.4 10 1 0.1 16 12 C te 8 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (° C) 150 0.1 C ob 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 8. Emitter Transition and Output Capacitance vs. Reverse Bias Voltage Figure 7. Collector Cut-Off Current vs. Ambient Temperature © 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 f = 1 MHz www.fairchildsemi.com 4 2N4401 / MMBT4401 — NPN General-Purpose Amplifier Typical Performance Characteristics 400 I B1 = I B2 = 320 400 Ic TIME (nS) TIME (nS) V cc = 25 V 240 160 240 tr td 100 I C - COLLECTOR CURRENT (mA) 0 10 1000 CHAR. RELATIVE TO VALUES AT I C= 10mA PD - POWER DISSIPATION (W) 1 SOT-223 TO-92 0.5 SOT-23 0.25 25 50 75 100 o TEMPERATURE ( C) 125 150 V CE = 10 V I C = 10 mA 2 h re h ie h fe 1.2 hoe 0.8 0.4 0 20 40 60 80 T A - AMBIENT TEMPERATURE ( o C) 100 Figure 13. Common Emitter Characteristics © 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 1000 V CE = 10 V T A = 25oC 6 hoe 4 h re 2 h fe 0 h ie 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 Figure 12. Common Emitter Characteristics 1.6 0 8 CHAR. RELATIVE TO VALUES AT VCE = 10V CHAR. RELATIVE TO VALUES AT TA = 25oC Figure 11. Power Dissipation vs. Ambient Temperature 2.4 100 I C - COLLECTOR CURRENT (mA) Figure 10. Switching Times vs.Collector Current Figure 9. Turn-On and Turn-Off Times vs. Collector Current 0 tf 80 t on 0 ts 160 t off 80 0.75 10 320 V cc = 25 V 0 10 Ic I B1 = I B2 = 10 1.3 I C = 10 mA T A = 25oC 1.25 1.2 h fe 1.15 h ie 1.1 1.05 1 h re 0.95 0.9 0.85 hoe 0.8 0.75 0 5 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 Figure 14. Common Emitter Characteristics www.fairchildsemi.com 5 2N4401 / MMBT4401 — NPN General-Purpose Amplifier Typical Performance Characteristics (Continued) 2N4401 / MMBT4401 — NPN General-Purpose Amplifier Physical Dimensions D Figure 15. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type © 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 www.fairchildsemi.com 6 2N4401 / MMBT4401 — NPN General-Purpose Amplifier Physical Dimensions (Continued) Figure 16. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type © 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 www.fairchildsemi.com 7 2N4401 / MMBT4401 — NPN General-Purpose Amplifier Physical Dimensions (Continued) 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 17. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 2001 Fairchild Semiconductor Corporation 2N4401 / MMBT4401 Rev. 1.1.0 www.fairchildsemi.com 8 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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