Datasheet (TSM230N06)

TSM230N06
60V N-Channel Power MOSFET
TO-252
(DPAK)
Key Parameter Performance
Pin Definition:
1. Gate
2. Drain
3. Source
Parameter
Value
Unit
VDS
60
V
RDS(on) (max)
VGS = 10V
23
VGS = 4.5V
28
Qg
28
nC
Block Diagram
Ordering Information
Part No.
mΩ
Package
Packing
TSM230N06CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (TC=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
50
A
32
A
IDM
200
A
EAS
42
mJ
Power Dissipation @ TC = 25 C
PD
53
W
Operating Junction Temperature
TJ
150
ºC
TSTG
-55 to +150
Symbol
Limit
Thermal Resistance - Junction to Case
RӨJC
2
Thermal Resistance - Junction to Ambient
RӨJA
62
TC = 25ºC
Continuous Drain Current
Pulsed Drain Current
ID
TC = 100ºC
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
o
Storage Temperature Range
o
C
Thermal Performance
Parameter
1/6
Unit
o
C/W
Version: B14
TSM230N06
60V N-Channel Power MOSFET
Electrical Specifications (TC=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
60
--
--
V
--
20
23
--
23
28
1.2
1.8
2.5
--
--
1
--
--
10
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 20A
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 4.5V, ID = 12A
VDS = VGS, ID = 250µA
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
(Note 3)
VDS = 60V, VGS = 0V
VDS = 48V, TJ = 125ºC
RDS(ON)
VGS(TH)
IDSS
mΩ
V
µA
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 10V, ID = 10A
gfs
--
9
--
S
Qg
--
28
--
Qgs
--
3.5
--
Qgd
--
6.5
--
Ciss
--
1680
--
Coss
--
115
--
Crss
--
85
--
td(on)
--
7.2
--
tr
--
38
--
td(off)
--
34
--
tf
--
8.2
--
IS
--
--
50
A
ISM
--
--
200
A
VGS = 0V, IS = 1A
VSD
--
--
1
V
VGS = 0V, IS = 1A
dIF/dt = 100A/µs
trr
--
19.6
--
ns
Qrr
--
14.2
--
nC
Dynamic
Total Gate Charge (Note 3,4)
Gate-Source Charge
Gate-Drain Charge
(Note 3,4)
(Note 3,4)
VDS = 30V, ID = 15A,
VGS = 10V
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
nC
pF
Switching
Turn-On Delay Time (Note 3,4)
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 3,4)
VDD = 30V, ID = 1A,
VGS = 10V, RG = 6Ω
(Note 3,4)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Forward Current
Diode-Source Forward Voltage
Reverse Recovery Time
(Note 3)
Reverse Recovery Charge
(Note 3)
Integral reverse diode
in the MOSFET
Note:
1.
Pulse width limited by safe operating area
2.
L=0.1mH, IAS=29A, VDD=25V, RG=25Ω, Starting TJ=25ºC
3.
Pulse test: pulse width ≤300µs, duty cycle ≤2%
4.
Switching time is essentially independent of operating temperature.
2/6
Version: B14
TSM230N06
60V N-Channel Power MOSFET
Electrical Characteristics Curve
Continuous Drain Current vs. TC
RDSON vs. Continuous Drain Current
Capacitance
Gate Charge
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
3/6
Version: B14
TSM230N06
60V N-Channel Power MOSFET
Electrical Characteristics Curve
Maximum Safe Operating Area
Normalized Thermal Transient Impedance
4/6
Version: B14
TSM230N06
60V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6
Version: B14
TSM230N06
60V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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6/6
Version: B14