TSM180N03PQ33 30V N-Channel Power MOSFET PDFN33 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 30 V RDS(on) (max) VGS = 10V 18 VGS = 4.5V 28 Qg nC Block Diagram Ordering Information Part No. 4.1 mΩ Package Packing TSM180N03PQ33 RGG PDFN33 5Kpcs / 13” Reel ● Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds N-Channel MOSFET Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V 25 A 16 A IDM 100 A EAS 32 mJ Power Dissipation @ TC = 25°C PD 21 W Operating Junction Temperature TJ +150 °C TSTG -55 to +150 °C Symbol Limit Unit Thermal Resistance - Junction to Ambient RӨJA 62 °C/W Thermal Resistance - Junction to Case RӨJC 6 °C/W Parameter TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C (Note 1) Single Pulse Avalanche Energy (Note 2) Storage Temperature Range ID Thermal Performance Parameter 1/5 Version: A14 TSM180N03PQ33 30V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit BVDSS 30 -- -- V -- 14 18 -- 20 28 1.2 1.6 2.5 -- -- 1 -- -- 10 IGSS -- -- ±100 nA gfs -- 6.5 -- S Qg -- 4.1 -- Qgs -- 1 -- Qgd -- 2.1 -- Ciss -- 345 -- Coss -- 55 -- Crss -- 32 -- td(on) -- 2.8 -- VDD = 15V, ID = 1A, tr -- 7.2 -- VGS = 10V, RG = 6Ω td(off) -- 15.8 -- tf -- 4.6 -- IS -- -- 25 A ISM -- -- 100 A VSD -- -- 1 V Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 12A VGS = 4.5V, ID = 8A VDS = VGS, ID = 250µA Zero Gate Voltage Drain Current Gate Body Leakage VDS = 30V, VGS = 0V VDS = 24V, TJ = 125°C VGS = ±20V, VDS = 0V Forward Transconductance (Note 3) VDS = 10V, ID = 6A RDS(ON) VGS(TH) IDSS mΩ V µA Dynamic Total Gate Charge (Note 3,4) Gate-Source Charge Gate-Drain Charge (Note 3,4) (Note 3,4) VDS = 15V, ID = 6A, VGS = 4.5V Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz nC pF Switching Turn-On Delay Time (Note 3,4) Turn-On Rise Time (Note 3,4) Turn-Off Delay Time (Note 3,4) Turn-Off Fall Time (Note 3,4) ns Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode Forward Current the MOSFET Diode-Source Forward Voltage VGS = 0V, IS = 1A Note: 1. Pulse width limited by safe operating area 2. L = 1mH, IAS = 8A, VDD = 25V, RG = 25Ω, Starting TJ = 25°C 3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 4. Switching time is essentially independent of operating temperature. 2/5 Version: A14 TSM180N03PQ33 30V N-Channel Power MOSFET Electrical Characteristics Curve Gate Charge VGS, Gate to Source Voltage (V) ID, Continuous Drain Current (A) Continuous Drain Current vs. TC Qg, Gate Charge (nC) TC, Case Temperature (°C) Threshold Voltage vs. Junction Temperature Normalized On Resistance (mW) Normalized Gate Threshold Voltage (V) On-Resistance vs. Junction Temperature TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Normalized Thermal Transient Impedance Curve ID, Continuous Drain Current (A) Normalized Thermal Response (RθJC) Maximum Safe Operating Area VD, Drain to Source Voltage (V) Square Wave Pulse Duration (s) 3/5 Version: A14 TSM180N03PQ33 30V N-Channel Power MOSFET PDFN33 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: A14 TSM180N03PQ33 30V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: A14