Datasheet (TSM042N03CS)

TSM042N03CS
30V N-Channel Power MOSFET
SOP-8
Pin Definition:
1. Source
8.
2. Source
7.
3. Source
6.
4. Gate
5.
Key Parameter Performance
Drain
Drain
Drain
Drain
Parameter
Value
Unit
VDS
30
V
RDS(on) (max)
VGS = 10V
4.2
VGS = 4.5V
6
Qg
24
nC
Block Diagram
Ordering Information
Part No.
mΩ
Package
Packing
TSM042N03CS RLG
SOP-8
2.5kps / 13’’ Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
30
A
19
A
Tc=25ºC
Continuous Drain Current
Pulsed Drain Current
Tc=100ºC
(Note 1)
ID
IDM
120
A
(Note 2)
EAS
125
mJ
Single Pulse Avalanche Current (Note 2)
IAS
50
A
Power Dissipation @ TC = 25 C
PD
7
W
Operating Junction Temperature
TJ
175
ºC
TSTG
-55 to +175
Symbol
Limit
RӨJA
62
Single Pulse Avalanche Energy
o
Storage Temperature Range
o
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
1/5
Unit
o
C/W
Version: A14
TSM042N03CS
30V N-Channel Power MOSFET
Electrical Specifications (TJ=25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
BVDSS
30
--
--
V
--
3.8
4.2
5.2
6
1.2
1.6
2.5
--
--
1
--
--
10
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 6A
VDS = VGS, ID = 250µA
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
VGS = 0V, ID = 250µA
(Note 3)
VDS = 30V, VGS = 0V
VDS = 24V, TJ = 125ºC
RDS(ON)
VGS(TH)
IDSS
mΩ
V
µA
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
VDS = 10V, ID = 6A
gfs
--
12
--
S
Qg
--
24
--
Qgs
--
4.2
--
Qgd
--
13
--
Ciss
--
2200
--
Coss
--
280
--
Crss
--
177
--
td(on)
--
12.6
--
tr
--
19.5
--
td(off)
--
42.8
--
tf
--
13.2
--
IS
--
--
30
A
ISM
--
--
120
A
VSD
--
--
1
V
Dynamic
Total Gate Charge (Note 3,4)
Gate-Source Charge
Gate-Drain Charge
(Note 3,4)
(Note 3,4)
VDS = 15V, ID = 12A,
VGS = 4.5V
Input Capacitance
VDS = 25V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
f = 1.0MHz
nC
pF
Switching
Turn-On Delay Time (Note 3,4)
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 3,4)
VDD = 15V, ID = 15A,
VGS = 10V, RGEN =3.3Ω
(Note 3,4)
ns
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Integral reverse diode in
the MOSFET
Forward Current
Diode Forward Voltage
VGS = 0V, IS = 1A
Note:
1.
Pulse width limited by safe operating area
2.
L=0.1mH, IAS =50A, VDD = 25V, RG = 25Ω, Starting TJ = 25ºC
3.
Pulse test: pulse width ≤300µs, duty cycle ≤2%
4.
Switching time is essentially independent of operating temperature.
2/5
Version: A14
TSM042N03CS
30V N-Channel Power MOSFET
Electrical Characteristics Curve
Continuous Drain Current vs. TC
Gate Charge
On-Resistance vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance Curve
3/5
Version: A14
TSM042N03CS
30V N-Channel Power MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
M
L
= Year Code
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
= Lot Code
4/5
Version: A14
TSM042N03CS
30V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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5/5
Version: A14