MBRF2035 thru MBRF20100 Taiwan Semiconductor CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA ITO-220AC Case: ITO-220AC Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.8 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBRF MBRF MBRF MBRF MBRF MBRF 2035 2045 2050 2060 2090 20100 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 V Maximum RMS voltage VRMS 24 31 35 42 63 70 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 V Maximum average forward rectified current IF(AV) 20 A Peak repetitive forward current (Rated VR, square wave, 20KHz) IFRM 40 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM 1 VF 0.75 0.82 0.95 0.65 0.72 0.87 Maximum instantaneous forward voltage (Note 2) IF=20A, TJ=25℃ IF=20A, TJ=125℃ Maximum reverse current @ Rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range IR dV/dt 0.5 0.2 15 A V 0.1 10 10000 mA 5 V/μs O RθJC 3 TJ - 55 to +150 O C - 55 to +150 O C TSTG Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1309013 Version: I13 C/W MBRF2035 thru MBRF20100 Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION AEC-Q101 PART NO. PACKING CODE QUALIFIED MBRF20xx (Note 1) Prefix "H" GREEN COMPOUND CODE C0 Suffix "G" PACKAGE PACKING ITO-220AC 50 / Tube Note 1: "xx" defines voltage from 35V (MBRF2035) to 100V (MBRF20100) EXAMPLE PREFERRED P/N PART NO. AEC-Q101 PACKING CODE QUALIFIED MBRF2060 C0 MBRF2060 C0 MBRF2060 C0G MBRF2060 C0 MBRF2060HC0 MBRF2060 H GREEN COMPOUND CODE G DESCRIPTION Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) 24 20 16 12 8 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 4 0 50 60 70 80 90 100 110 120 130 140 150 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 150 8.3ms Single Half Sine Wave JEDEC Method 125 100 75 50 25 0 0 1 CASE TEMPERATURE (oC) 100 100 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) Pulse Width=300μs 1% Duty Cycle TJ=125℃ TJ=25℃ 1 0.1 MBRF2035-2045 MBRF2050-2060 MBRF2090-20100 0.01 0 100 FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG 10 10 NUMBER OF CYCLES AT 60 Hz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1309013 1 1.1 1.2 10 TJ=125℃ 1 0.1 TJ=25℃ 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: I13 MBRF2035 thru MBRF20100 Taiwan Semiconductor CREAT BY ART FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG MBRF2035-2060 1000 MBRF2090-20100 10 1 0.1 100 0.1 1 10 100 0.01 0.1 1 10 100 T-PULSE DURATION(s) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A 4.30 4.70 0.169 0.185 B 2.50 3.10 0.098 0.122 C 2.30 2.90 0.091 0.114 D 0.46 0.76 0.018 0.030 E 6.30 6.90 0.248 0.272 F 9.60 10.30 0.378 0.406 G 3.00 3.40 0.118 0.134 H 0.00 1.60 0.000 0.063 I 0.95 1.45 0.037 0.057 J 0.50 0.90 0.020 0.035 K 2.40 3.20 0.094 0.126 L 14.80 15.50 0.583 0.610 M - 4.10 - 0.161 N - 1.80 - 0.071 O 12.60 13.80 0.496 0.543 P 4.95 5.20 0.195 0.205 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1309013 Version: I13 MBRF2035 thru MBRF20100 Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1309013 Version: I13