MUR305S thru MUR360S Taiwan Semiconductor CREAT BY ART FEATURES Surface Mount Ultrafast Power Rectifiers - Glass passivated chip junction - Ideal for automated placement - Built-in strain relief - Ultrafast recovery time for high efficiency - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AB (SMC) DO-214AB (SMC) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.21 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MUR MUR MUR MUR MUR MUR 305S 310S 315S 320S 340S 360S Unit Maximum repetitive peak reverse voltage VRRM 50 100 150 200 400 600 V Maximum RMS voltage VRMS 35 70 105 140 280 420 V Maximum DC blocking voltage VDC 50 100 150 200 400 600 V Maximum average forward rectified current IF(AV) 3 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 75 A Maximum instantaneous forward voltage (Note 1) IF= 3 A, 25℃ IF= 3 A, 150℃ VF 0.875 0.710 1.25 1.05 V Maximum reverse current @ rated VR TJ=25 ℃ TJ=150 ℃ IR 5 150 10 250 μA Maximum reverse recovery time (Note 2) Trr 25 50 Typical thermal resistance Operating junction temperature range Storage temperature range ns O RθJL 11 TJ - 55 to +175 O C - 55 to +175 O C TSTG C/W Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Document Number: DS_D1405070 Version: F14 MUR305S thru MUR360S Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND QUALIFIED PACKING SMC 850 / 7" Plastic reel CODE R7 MUR3xxS (Note 1) PACKAGE R6 Prefix "H" Suffix "G" M6 SMC 3,000 / 13" Paper reel SMC 3,000 / 13" Plastic reel Note 1: "xx" defines voltage from 50V (MUR305S) to 600V (MUR360S) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. PACKING CODE QUALIFIED MUR360S R7 MUR360S R7 MUR360S R7G MUR360S R7 MUR360SHR7 MUR360S H GREEN COMPOUND DESCRIPTION CODE G Green compound R7 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) 4 3 2 1 0 0 25 50 75 100 125 150 175 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) FIG.1 MAXIMUM FORWARD CURRENT DERATING CURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 80 70 60 50 40 30 20 10 8.3ms Half Sin Wave 0 1 10 LEAD TEMPERATURE (oC) FIG. 4 TYPICAL FORWARD CHARACTERISTICS 10 INSTANTANEOUS FORWARD CURRENT(A) INSTANTANEOUS FORWARD CURRENT(A) FIG. 3 TYPICAL FORWARD CHARACTERISTICS MUR305S-320S TJ=150℃ 1 TJ=25℃ 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) Document Number: DS_D1405070 100 NUMBER OF CYCLES AT 60 Hz 1.6 1.8 2 10 MUR340S-360S TJ=150℃ 1 TJ=25℃ 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 FORWARD VOLTAGE (V) Version: F14 MUR305S thru MUR360S Taiwan Semiconductor FIG. 5 TYPICAL REVERSE CHARACTERISTICS FIG. 6 TYPICAL REVERSE CHARACTERISTICS 1000 MUR305S-320S 100 INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS REVERSE CURRENT (μA) 1000 TJ=150℃ 10 1 0.1 TJ=25℃ 0.01 0.001 10 20 30 40 50 60 70 80 90 MUR340S-360S 100 TJ=150℃ 10 1 TJ=25℃ 0.1 0.01 0.001 100 10 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) FIG. 7 TYPICAL JUNCTION CAPACITANCE CAPACITANCE (pF) 1000 MUR305S-320S 100 MUR340S-360S 10 0.1 1 10 100 REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Document Number: DS_D1405070 Unit (mm) Unit (inch) Min Max Min Max A 2.90 3.20 0.114 0.126 B 6.60 7.11 0.260 0.280 C 5.59 6.22 0.220 0.245 D 2.00 2.62 0.079 0.103 E 1.00 1.60 0.039 0.063 F 7.75 8.13 0.305 0.320 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 Version: F14 MUR305S thru MUR360S Taiwan Semiconductor SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 3.3 0.130 B 2.5 0.098 C 6.8 0.268 D 4.4 0.173 E 9.4 0.370 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document Number: DS_D1405070 Version: F14 MUR305S thru MUR360S Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1405070 Version: F14