BC846/BC847/BC848 SMD General Purpose Transistor (NPN)

SMD General Purpose
Transistor (NPN)
BC846/BC847/BC848
SMD General Purpose Transistor (NPN)
Features
z NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
Mechanical Data
SOT-23
SOT-23, Plastic Package
Case:
Solderable per MIL-STD-202G, Method 208
Terminals:
0.008 gram
Weight:
Marking Information
Marking Code
BC846A
BC846B
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
1A
1B
1E
1F
1G
1J
1K
1L
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
BC846
BC847
BC848
Unit
VCBO
Collector-Base Voltage
80
50
30
V
VCEO
Collector-Emitter Voltage
65
45
30
V
VEBO
Emitter-Base Voltage
6
6
5
V
Conditions
IC
Collector Current
100
mA
Ptot
Power Dissipation
330
mW
Note 1
RθJA
Thermal Resistance, Junction to Ambient
375
° C/W
Note 1
Junction Temperature
-55 to +150
°C
Storage Temperature Range
-55 to +150
°C
TJ
TSTG
Note: 1. Transistor mounted on FR-4 board 8cm2.
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SMD General Purpose Transistor (NPN)
BC846/BC847/BC848
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Description
Min.
Typ.
Max.
Unit
Conditions
-
-
15
nA
VCB=30V, IE=0
-
-
5.0
µA
BC846/7/8, Suffix ‘A’
-
90
-
BC846/7/8, Suffix ‘B’
-
150
-
BC847/8, Suffix ‘C’
-
270
-
BC846/7/8, Suffix ‘A’
110
180
220
BC846/7/8, Suffix ‘B’
200
290
450
BC847/8, Suffix ‘C’
420
520
800
-
-
0.25
Collector-Base Cut-off Current
VCB=30V, IE=0,
TJ=150° C
VCE=5V, IC=10µA
D.C. Current Gain
Collector-Emitter Saturation Voltage
IC=10mA, IB=0.5mA
V
-
-
0.6
-
0.7
-
Base-Emitter Saturation Voltage
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
V
-
0.9
-
0.58
0.66
0.7
Base-Emitter On Voltage
Current Gain-Bandwidth Product
VCE=5V, IC=2mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
V
VCE=5V, IC=10mA
-
-
0.77
100
-
-
MHz
Cob
Collector Output Capacitance
-
-
4.5
pF
NF
Noise Figure
-
-
10
dB
VCE=5V, IC=10mA,
f=100MHz
VCB=10V, IE=0,
f=1MHz
VCE=5V, IC=0.2mA,
RG=2KΩ, f=1KHz
Rev. B/CH
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SMD General Purpose Transistor (NPN)
BC846/BC847/BC848
Typical Characteristics Curves
1. BC846A, BC847A, BC848A
Fig.2- DC Current Gain vs. Collector Current
DC Current Gain
Collector Cut-off Current (nA)
Fig.1-Collector Cut-off Current
vs. Junction Temperature
Junction Temperature (°C)
Collector Current (mA)
Collector-Emitter Saturation Voltage (mV)
Base-Emitter On Voltage (mV)
Fig.3-Base-Emitter On Voltage
vs. Collector Current
Collector Current (mA)
Fig.4- Collector-Emitter Saturation Voltage
vs. Collector Current
Collector Current (mA)
Rev. B/CH
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SMD General Purpose Transistor (NPN)
Fig.5- Base-Emitter Saturation Voltage
vs. Collector Current
Fig.6- Typical Capacitances vs. Reverse Voltage
Capacitance (pF)
Base-Emitter Saturation Voltage (mV)
BC846/BC847/BC848
Collector Current (mA)
Reverse Voltage (V)
2. BC846B, BC847B, BC848B
Fig.2- DC Current Gain vs. Collector Current
DC Current Gain
Collector Cut-off Current (nA)
Fig.1-Collector Cut-off Current
vs. Junction Temperature
Junction Temperature (°C)
Collector Current (mA)
Rev. B/CH
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SMD General Purpose Transistor (NPN)
Base-Emitter On Voltage (mV)
Fig.3-Base-Emitter On Voltage
vs. Collector Current
Collector-Emitter Saturation Voltage (mV)
BC846/BC847/BC848
Collector Current (mA)
Collector Current (mA)
Fig.5- Base-Emitter Saturation Voltage
vs. Collector Current
Fig.6- Typical Capacitances vs. Reverse Voltage
Capacitance (pF)
Base-Emitter Saturation Voltage (mV)
Fig.4- Collector-Emitter Saturation Voltage
vs. Collector Current
Collector Current (mA)
Reverse Voltage (V)
Rev. B/CH
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Page 5 of 8
SMD General Purpose Transistor (NPN)
BC846/BC847/BC848
3. BC847C, BC848C
Fig.2- DC Current Gain vs. Collector Current
DC Current Gain
Collector Cut-off Current (nA)
Fig.1-Collector Cut-off Current
vs. Junction Temperature
Junction Temperature (°C)
Collector Current (mA)
Collector-Emitter Saturation Voltage (mV)
Base-Emitter On Voltage (mV)
Fig.3-Base-Emitter On Voltage
vs. Collector Current
Collector Current (mA)
Fig.4- Collector-Emitter Saturation Voltage
vs. Collector Current
v
Collector Current (mA)
Rev. B/CH
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Page 6 of 8
SMD General Purpose Transistor (NPN)
Fig.5- Base-Emitter Saturation Voltage
vs. Collector Current
Fig.6- Typical Capacitances vs. Reverse Voltage
Capacitance (pF)
Base-Emitter Saturation Voltage (mV)
BC846/BC847/BC848
Collector Current (mA)
Reverse Voltage (V)
Dimensions in mm
SOT-23
Rev. B/CH
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Page 7 of 8
SMD General Purpose Transistor (NPN)
BC846/BC847/BC848
How to contact us:
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