Small Signal General Purpose Transistors (PNP) PN4356 Small Signal General Purpose Transistors (PNP) Features • PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications • RoHS Compliance Mechanical Data TO-92 TO-92, Plastic Package Case: Terminals: Solderable per MIL-STD-202G, Method 208 0.18 gram Weight: Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description PN4356 Unit VCEO Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current Continuous 500 mA PD Power Dissipation at TA=25°C 625 mW PD Power Dissipation at TC=25°C 1.0 mW -55 to +150 °C TJ ,TSTG Operation and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 4 Small Signal General Purpose Transistors (PNP) PN4356 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) PN4356 Symbol VCBO VCEO(SUS)* VEBO VCE(sat)* VBE(sat)* Description Conditions - V IC=10µA, IE=0 80 - V IC=10mA, IB=0 (pulsed) 5.0 - V IE=10µA, IC=0 - 0.15 - 0.50 - 1.0 IC=1A, IB=100mA - 0.9 IC=150mA, IB=15mA - 1.1 - 1.2 - 1.1 - 1.2 - 50 nA VCB=50V, IE=0 - 5 µA VCB=50V, IE=0, TA=75° C - 100 nA VBE=4V, IC=0 25 - VCE=10V, IC=100µA 40 - VCE=10V, IC=1mA 50 250 VCE=10V, IC=10mA 40 - VCE=10V, IC=100mA 30 - VCE=10V, IC=500mA 1.0 5.0 Max. Collector-Base Voltage 80 Collector-Emitter Voltage Emitter-Base Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VBE(on)* Base Emitter On Voltage ICBO Collector Cut–Off Current IEBO Emitter Cut–Off Current hFE* Unit Min. D.C. Current Gain IC=150mA, IB=15mA V V IC=500mA, IB=50mA IC=500mA, IB=50mA IC=1A, IB=100mA V IC=500mA, VCE=0.5V IC=1A, VCE=1V l hfe l Common Emitter Small Signal Current Gain CCBO Collector-Base Capacitance - 30 pF CEBO Emitter-Base Capacitance - 110 pF ton Turn On Time - 100 nS toff Turn Off Time - 400 nS NF Noise Figure - 3.0 dB VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0 f=1.0MHz VEB=0.5V, IC=0 f=1.0MHz VCC=30V, IC=500mA, IB1=50mA VCC=30V, IC=500mA, IB1=IB2=50mA VCE=10V, IC=100µA, Rs=1kΩ, f=1kHz, BW=1Hz *Pulse Test: Pulse Width<300µs, Duty Cycle<1% Rev. A/AH www.taitroncomponents.com Page 2 of 4 Small Signal General Purpose Transistors (PNP) PN4356 Dimensions in mm TO-92 Rev. A/AH www.taitroncomponents.com Page 3 of 4 Small Signal General Purpose Transistors (PNP) PN4356 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH www.taitroncomponents.com Page 4 of 4