Power Transistor (PNP) D45H11 Power Transistor (PNP) Features • Application for Switching Regulators, Converters and Power Amplifiers • Very low collector saturation voltage • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals: Weight: Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 grams Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description D45H11 Unit VCEO Collector-Emitter Voltage 80 V VCES Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V Collector Current Continuous 10 A Collector Current Peak 20 A Base Current 2 A Total Power Dissipation at TC=25°C 50 W Total Power Dissipation Derate above 25°C 0.4 W/° C Thermal Resistance from Junction to Case 2.5 ° C /W -55 to +150 °C IC ICM IB PD RθJC TJ, TSTG Operating Junction and Storage Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-09-25 Page 1 of 4 Power Transistor (PNP) D45H11 Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol *hFE Description Min. Max. Unit Conditions 60 - VCE=1.0V, IC=2.0A 40 - VCE=1.0V, IC=4.0A D.C. Current Gain VCEO(sus) Collector-Emitter Sustaining Voltage 80 - V IC=30mA, IB=0 *VCE(sat) Collector-Emitter Saturation Voltage - 1.0 V IC=8.0A, IB=400mA *VBE(sat) Base-Emitter Saturation Voltage - 1.5 V IC=8.0A, IB=800mA ICES Collector-Emitter Cut-off Current - 10 μA VCE=80V, VBE=0 IEBO Emitter-Base Cut-off Current - 100 μA VBE=5V, IC=0 Current-Gain Bandwidth Product 12 - MHz Output Capacitance 400 - pF fT Cob tr Rise Time - 0.6 tS Storage Time - 1.2 tf Fall Time - 0.5 μS VCE=10V, IC=0.5A, f=0.5MHz, fT=l hfe l º f test VCB=10V, IE=0, f=1.0MHz, IC=5.0A, IB1=-IB2=500mA *Pulse Test: Pulse Width=300µs, Duty Cycle≤2% Rev. A/AH 2008-09-25 www.taitroncomponents.com Page 2 of 5 Power Transistor (PNP) D45H11 Typical Characteristics Curves Fig.2-DC Current Gain DC Current Gain, hFE Power Dissipation, PD (W) Fig.1- Power Derating Collector Current, IC (A) Case Temperature, Tc (°C) Fig.4- Forward Bias Safe Operating Area Voltage (V) Collector Current, IC (A) Fig.3- ‘On’ Voltages Collector Current, IC (A) Collector Emitter Voltage, VCE (V) Rev. A/AH 2008-09-25 www.taitroncomponents.com Page 3 of 5 Power Transistor (PNP) D45H11 Dimensions in inch (mm) TO-220 Rev. A/AH 2008-09-25 www.taitroncomponents.com Page 4 of 5 Power Transistor (PNP) D45H11 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2008-09-25 www.taitroncomponents.com Page 5 of 5