UNISONIC TECHNOLOGIES CO., LTD UF640-Q Preliminary Power MOSFET 18A, 200V, 0.20Ω, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The UF640-Q suitable for resonant and PWM converter topologies. FEATURES * RDS(ON) < 0.20Ω @ VGS=10V, ID=10A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen-Free UF640L-TN3-T UF640G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 Pin Assignment 1 2 3 G D S Packing Tube MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 5 QW-R209-079.a UF640-Q Preliminary Power MOSFET ABSOLUTE MAXIMUM RATING (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 200 V Drain-Gate Voltage (RGS=20kΩ) VDGR 200 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 18 A Pulsed Drain Current (Note 2) IDM 72 A Single Pulse Avalanche Energy Rating (Note 2) EAS 200 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.8 V/ns Maximum Power Dissipation PD 123 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=1.2mH, VDD=50V, RG=25Ω, peak IAS=18A, starting TJ=25°C. 4. ISD ≤ 18A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C. THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 110 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250μA, VGS=0V Drain-Source Leakage Current IDSS VDS = Rated BVDSS, VGS = 0V Gate-Source Leakage Current IGSS VGS= ±20V ON CHARACTERISTICS Gate Threshold Voltage VGS(THR) VGS=VDS, ID=250μA Drain-Source On Resistance RDS(ON) VGS=10V, ID=10A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=10V, ID=1.3A, VDS=50V, IG=100μA Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS=10V, ID=0.5A, VDD=10V, RG=25Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE TO DRAIN DIODE SPECIFICATIONS Diode Forward Voltage (Note) VSD TJ=25°C, IS=18A, VGS=0V, Continuous Source Current IS (body diode) Pulse Source Current (body diode) ISM (Note) Reverse Recovery Time trr TJ=25°C, IS=18A, dIS/dt=100A/μs Reverse Recovery Charge QRR TJ=25°C, IS=18A, dIS/dt=100A/μs UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 200 2 25 ±100 V μA nA 4 0.20 V Ω 805 240 46 pF pF pF 23 5.0 8.8 40 140 112 125 nC nC nC ns ns ns ns 170 1.0 2.0 V 18 A 72 A ns μC 2 of 5 QW-R209-079.a UF640-Q Preliminary Power MOSFET Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R209-079.a UF640-Q Preliminary Power MOSFET TEST CIRCUIT VDS RL 10% 0 RG VDD VGS 90% D.U.T. 90% VGS 50% 10% 0 tD(ON) tON Fig.3 Switching Time Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tR PULSE WIDTH 50% tD(OFF) tF tOFF Fig.4 Resistive Switching Waveforms 4 of 5 QW-R209-079.a UF640-Q Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R209-079.a